Abstract: A complementary semiconductor device includes P- and N-type semiconductor regions separately formed in a semiconductor substrate and having substantially the same concentration of impurities. The N- and P-channel type silicon gate field effect transistors are formed in the P- and N-channel type regions, respectively. Gate electrodes of the P-and N-channel type silicon gate field effect transistors are formed by polycrystalline silicons of the same conductivity type. An impurity of the same conductivity type is doped into both the semiconductor regions to provide channel doped regions.

Abstract: A position and direction sensing mark is formed on an integrated circuit pellet formed with a prescribed electrode pattern. The position and direction sensing mark comprises a plurality of strips which are extended in a direction different from that in which the electrode pattern is extended and are arranged in turn at prescribed intervals in a direction intersecting the different direction at right angles thereto.

Abstract: A semiconductor integrated circuit device comprising a CMOS circuit in which parasitic transistors form a parasitic thyristor circuit. In this device, noise absorption resistances are provided at the noise inputs to absorb noise which otherwise might become trigger pulses for the thyristors.

Abstract: A CMOS FET device which comprises an N type semiconductor substrate; a P type well layer formed in the N type semiconductor substrate; a p-channel type MOS transistor provided in the N type semiconductor substrate; an n-channel type MOS transistor formed in the P type well layer; and a noise-absorbing capacitor provided at the input or output terminal of the MOS transistor or at a power supply section.

Abstract: A semiconductor memory device comprising an N conductivity type semiconductor substrate, a P conductivity type well formed in a specified section of the surface of the semiconductor substrate, N conductivity type source and drain regions formed in the P conductivity type well, and a gate insulation layer deposited on the surface of the well over the source and drain regions. The P conductivity type well has a higher impurity concentration than the N conductivity type semiconductor substrate and the N conductivity type source and drain regions have a higher impurity concentration than the P conductivity type well. An insulation film is formed on the drain region and the insulation film, a metal electrode layer deposited on the insulation film and drain region collectively institute a capacitor.

Abstract: An integrated circuit device includes complementary MOS circuit elements formed in an N type semiconductor substrate with a P type region formed in the substrate. Protective circuit elements connected to an input terminal are formed in an area of the substrate other than the region thereof having the complementary MOS circuit elements formed therein. At least one of the regions constituting the protective circuit elements is formed in a P type additional region formed in the area of the N type substrate.

Abstract: A voltage sensing circuit of differential input type includes at least one differential amplifier circuit connected between two complementary data lines of a semiconductor memory. The differential amplifier circuit detects data in response to a minute potential difference between the data lines and amplifies the same by a substantial change in conductance g.sub.m of metal oxide semiconductor field effect transistors (MOSFET) used in the circuit. When data is read from a semiconductor memory onto the data lines, the differential amplifier sensing circuit detects the data quickly by detecting potential changes of the data lines.

Abstract: A binary counter provided with complementary field effect transistor inverters which includes at least three complementary field effect transistor inverters, at least two of which comprise clocked inverters acting upon receipt of clock signals having a complementary relationship. The three inverters are cascade connected with the output terminal of the last stage inverter connected to the input terminal of the first stage inverter, and the two clocked inverters are made to act alternately upon receipt of complementary clock signals, thereby enabling an output to be generated from the output side of one of the inverters with a frequency equal to half that of clock signals simultaneously supplied to both clocked inverters.

Abstract: A semiconductor memory device includes a memory circuit formed of a plurality of matrix-arranged memory cells, a plurality of output data lines, each of which is connected to memory cells arranged in the same column of the matrix memory circuit, and a plurality of data-sensing circuits for delivering output data from the matrix memory circuit to an output device. The data-sensing circuits are divided into a plurality of groups, and the semiconductor memory device further comprises clocked inverters whose input terminals are connected to the output terminals of the respective groups of sensing circuits and whose output terminals are connected to the output device, and a control circuit which, when one of the data-sensing circuits issues an output, supplies an energizing signal to that of the clocked inverters which is connected to said one data-sensing circuit.

Abstract: A frequency divider wherein an output from a crystal oscillating circuit comprising a crystal oscillating element and an inverter connected in parallel therewith is sent forth as a one-phase oscillation pulse for frequency division from the input or output side of the inverter to the .phi. input terminal of a counter formed of a plurality of insulated gate field effect transistors (hereinafter abbreviated "IGFET's"). The counter comprises a plurality of cascade-connected complementary unit circuits each consisting of a series circuit of IGFET's connected between power supply terminals with IGFET's disposed on one side of an imaginary border line connecting the input and output terminals of said complementary unit circuit chosen to have a different channel type from those provided on the other side of said border line, and wherein at least the first and last complementary unit circuits' IGFET's are provided in different numbers on both sides of said border line.

Abstract: Provided is a semiconductor memory device comprising a pair of data input lines, a pair of data output lines, memory cells arranged in the form of a matrix, the memory cell of each column being connected between a pair of data lines, the memory cell of each row being connected to a row selection line, a memory cell selection circuit for generating column and row designation signals in order to select a desired one of said memory cells, a switching circuit disposed in each column and turned on upon receipt of a column designation signal from the memory cell selection circuit to connect the data line to a corresponding one of the data input lines, and a data detection circuit connected between the pair of data lines of each column and adapted, upon receipt of a column signal from the memory cell selection circuit, to transmit an inverted signal of a signal on the data line onto the data output line.

Abstract: A ROM with a matrix array of insulated gate enhancement type field effect transistors in each of which any information is not yet written is preliminarily prepared by a plurality of strip-shape diffusion regions doped at a predetermined interval in a given conductivity type semiconductor substrate and having a conductivity type opposite to that of the substrate, a plurality of strip-shape electroconductive metal layers formed through a first relatively thick insulation layer on the substrate at a predetermined interval so as to intersect the respective diffusion regions; and a plurality of gate electrode foils each formed through a second insulation layer thinner than the first insulation layer on that surface portion of the substrate which positions between the corresponding mutually facing ones of the diffusion regions so as integrally to project from the corresponding one of the electroconductive metal layers.

Abstract: A matrix circuit acting as a read only memory (ROM) comprises first and second groups of input lines, a third group of input lines arranged between the first and second groups of input lines, a plurality of groups of output lines intersecting the input lines off the first, second and third group, each group of the output lines having one terminal commonly connected in a wired OR fasion to one end of a power source and having the other terminal commonly connected to the ground.

Abstract: A semiconductor R-S flip-flop circuit comprises first and second input terminals, first and second output terminals, a first integrated injection logic unit consisting of a first transistor acting as a switching element and a second transistor acting as an injector, and a second integrated injection logic unit consisting of a third transistor acting as a switching element and a fourth transistor acting as an injector. The R-S flip-flop circuit further includes a first diode having a cathode connected to the first input terminal and an anode connected to the base of the first transistor, a second diode having a cathode connected to the second input terminal and an anode connected to the base of the third transistor, a third diode having an anode connected to the base of the first transistor and a cathode connected to the collector of the third transistor, and a fourth diode having an anode connected to the base of the third transistor and a cathode connected to the collector of the first transistor.

Abstract: An integrated circuit for a programmable television receiver comprises a memory for storing a plurality of programs, a digital clock and a character generating circuit for generating character signals for displaying the programs in the memory and/or time of the digital clock on the screen of a television receiver. The integrated circuit uses dynamic circuits to reduce the number of elements required, and CMOS transistors to attain a lower power dissipation.

Abstract: An address decoder comprises an OR circuit and a NOR circuit, the OR circuit having switching transistors to which decoder inputs and a chip enable signal are applied, a load transistory and a transistor for precharging a common precharge node by the complementary chip enable signal. The output of this OR circuit is applied to the NOR circuit with the complementary chip enable signal, the set-up time of the decoder or the NOR circuit being independent of the number of decoder inputs.

Abstract: A semiconductor latch circuit formed of a plurality of integrated injection logic (abbreviated as "IIL") units each comprising a switching transistor acting as a switching element and an injector transistor acting as an injector, wherein a Schottky diode is connected to the base of the switching transistor.

Abstract: The dynamic type semiconductor memory device comprises a refresh circuit and a plurality of memory cells which are connected between a data input line and a data output line, a plurality of read/write command signal lines and a plurality of word selection lines provided for respective semiconductor memory cells. Each semiconductor memory cell comprises serially connected first p-channel MOS transistor and a second n-channel MOS transistor having gate electrodes connected to the read/write command signal line and the data input line respectively, a third p-channel MOS transistor connected between the data output line and the word selection line and having a gate electrode connected to the node between the first and second transistors, and a parasitic capacitance connected to the node between the first and second transistors for storing data.

Abstract: A counter comprises a cascade connection of an inverter stage and n one-bit shift register stages, the latter being operative in response to clock signals to be counted and each having a data-readin or front half-bit shift register stage and a data-readout or rear half-bit shift register stage. The output of the final stage in the cascade connection is coupled to the input of the first stage in the cascade connection. The output of the final stage is also coupled to an additional input of consecutive 1st to X-th shift register stages or consecutive 2nd to (X-1)-th shift register stages of an X-th shift register stage to constitute a scale-of-2n-X or 2n-(X-1) counter.

Abstract: An n scale counter includes a shift register having X number of unit delay circuits connected in series and each consisting of a plurality of insulated gate field effect transistors. The unit delay circuits of the shift register are simultaneously supplied with pulses to be counted and each of the delay cicuits is set or reset to an initial state. There is also provided a closed loop circuit including a first gate circuit connected to receive an output signal from the last stage delay circuit as one input terminal, and a logic circuit connected to receive output signals from the first gate circuit and, for example, the first stage delay circuit and produce to the input terminal of the first stage delay circuit an output signal indicating coincidence or incoincidence of its input signals. The counter is capable of counting pulses of (2.sup.x -1) at maximum.