Abstract: An indium phosphide crystal substrate has a diameter of 100-205 mm and a thickness of 300-800 ?m and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of sulfur is from 2.0×1018 to 8.0×1018 cm?3, the indium phosphide crystal substrate has an average dislocation density of 10-500 cm?2, and when am atomic concentration of tin is from 1.0×1018 to 4.0×1018 cm?3 or an atomic concentration of iron is from 5.0×1015 to 1.0×1017 cm?3, the indium phosphide crystal substrate has an average dislocation density of 500-5000 cm?2.

Abstract: A gallium arsenide crystal substrate has a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 300 ?m and not greater than 800 ?m and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of silicon is not lower than 3.0×1016 cm?3 and not higher than 3.0×1019 cm?3, the gallium arsenide crystal substrate has an average dislocation density not lower than 0 cm?2 and not higher than 15000 cm?2, and when an atomic concentration of carbon is not lower than 1.0×1015 cm?3 and not higher than 5.0×1017 cm?3, the gallium arsenide crystal substrate has an average dislocation density not lower than 3000 cm?2 and not higher than 20000 cm?2.

Abstract: A plunger kit including a piston to be slidably inserted into a liquid medicine storage chamber and a plunger rod to be mounted to the piston, a syringe kit, and a prefilled syringe, in which there is formed, on a tip end of the plunger rod, a mounting part having a shaft part that projects to a tip end side with a substantially constant diameter, an engagement part forming an engagement surface increased in diameter from a tip end of the shaft part in a radial direction and formed substantially perpendicular to an axial direction, and a conical part formed on a tip end side of the engagement part and reduced in diameter in a tapered manner toward a tip end in the axial direction, and a cut-out part obtained by cutting out a part in a circumferential direction is formed on the engagement part.

Abstract: A GaAs substrate has a first surface. The sum of the number of particles having a longer diameter of more than or equal to 0.16 ?m which are present in the first surface, per cm2 of the first surface, and the number of damages having a longer diameter of more than or equal to 0.16 ?m which are present in a second surface, per cm2 of the second surface, is less than or equal to 2.1, the second surface being formed by etching the first surface by 0.5 ?m in a depth direction.

Abstract: An indium phosphide substrate, a method of inspecting thereof and a method of producing thereof are provided, by which an epitaxial film grown on the substrate is rendered excellently uniform, thereby allowing improvement in PL characteristics and electrical characteristics of an epitaxial wafer formed using this epitaxial film. The indium phosphide substrate has a first main surface and a second main surface, a surface roughness Ra1 at a center position on the first main surface, and surface roughnesses Ra2, Ra3, Ra4, and Ra5 at four positions arranged equidistantly along an outer edge of the first main surface and located at a distance of 5 mm inwardly from the outer edge. An average value m1 of the surface roughnesses Ra1, Ra2, Ra3, Ra4, and Ra5 is 0.5 nm or less, and a standard deviation ?1 of the surface roughnesses Ra1, Ra2, Ra3, Ra4, and Ra5 is 0.2 nm or less.

Abstract: A gallium arsenide crystal substrate has a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 300 ?m and not greater than 800 ?m and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of silicon is not lower than 3.0×1016 cm?3 and not higher than 3.0×1019 cm?3, the gallium arsenide crystal substrate has an average dislocation density not lower than 0 cm?2 and not higher than 15000 cm?2, and when an atomic concentration of carbon is not lower than 1.0×1015 cm?3 and not higher than 5.0×1017 cm?3, the gallium arsenide crystal substrate has an average dislocation density not lower than 3000 cm?2 and not higher than 20000 cm?2.

Abstract: An indium phosphide crystal substrate has a diameter of 100-205 mm and a thickness of 300-800 ?m and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of sulfur is from 2.0×1018 to 8.0×1018 cm?3, the indium phosphide crystal substrate has an average dislocation density of 10-500 cm?2, and when an atomic concentration of tin is from 1.0×1015 to 4.0×1018 cm?3 or an atomic concentration of iron is from 5.0×1015 to 1.0×1017 cm?3, the indium phosphide crystal substrate has an average dislocation density of 500-5000 cm?2.

Abstract: An indium phosphide substrate, a method of inspecting thereof and a method of producing thereof are provided, by which an epitaxial film grown on the substrate is rendered excellently uniform, thereby allowing improvement in PL characteristics and electrical characteristics of an epitaxial wafer formed using this epitaxial film. The indium phosphide substrate has a first main surface and a second main surface, a surface roughness Ra1 at a center position on the first main surface, and surface roughnesses Ra2, Ra3, Ra4, and Ra5 at four positions arranged equidistantly along an outer edge of the first main surface and located at a distance of 5 mm inwardly from the outer edge. An average value m1 of the surface roughnesses Ra1, Ra2, Ra3, Ra4, and Ra5 is 0.5 nm or less, and a standard deviation ?1 of the surface roughnesses Ra1, Ra2, Ra3, Ra4, and Ra5 is 0.2 nm or less.

Abstract: An indium phosphide substrate, a method of inspecting thereof and a method of producing thereof are provided, by which an epitaxial film grown on the substrate is rendered excellently uniform, thereby allowing improvement in PL characteristics and electrical characteristics of an epitaxial wafer formed using this epitaxial film. The indium phosphide substrate has a first main surface and a second main surface, a surface roughness Ra1 at a center position on the first main surface, and surface roughnesses Ra2, Ra3, Ra4, and Ra5 at four positions arranged equidistantly along an outer edge of the first main surface and located at a distance of 5 mm inwardly from the outer edge. An average value m1 of the surface roughnesses Ra1, Ra2, Ra3, Ra4, and Ra5 is 0.5 nm or less, and a standard deviation ?1 of the surface roughnesses Ra1, Ra2, Ra3, Ra4, and Ra5 is 0.2 nm or less.

Abstract: An indium phosphide substrate, a method of inspecting thereof and a method of producing thereof are provided, by which an epitaxial film grown on the substrate is rendered excellently uniform, thereby allowing improvement in PL characteristics and electrical characteristics of an epitaxial wafer formed using this epitaxial film. The indium phosphide substrate has a first main surface and a second main surface, a surface roughness Ra1 at a center position on the first main surface, and surface roughnesses Ra2, Ra3, Ra4, and Ra5 at four positions arranged equidistantly along an outer edge of the first main surface and located at a distance of 5 mm inwardly from the outer edge. An average value m1 of the surface roughnesses Ra1, Ra2, Ra3, Ra4, and Ra5 is 0.5 nm or less, and a standard deviation ?1 of the surface roughnesses Ra1, Ra2, Ra3, Ra4, and Ra5 is 0.2 nm or less.

Abstract: A GaAs substrate has a first surface. The sum of the number of particles having a longer diameter of more than or equal to 0.16 ?m which are present in the first surface, per cm2 of the first surface, and the number of damages having a longer diameter of more than or equal to 0.16 ?m which are present in a second surface, per cm2 of the second surface, is less than or equal to 2.1, the second surface being formed by etching the first surface by 0.5 ?m in a depth direction.

Abstract: An indium phosphide substrate, a method of inspecting thereof and a method of producing thereof are provided, by which an epitaxial film grown on the substrate is rendered excellently uniform, thereby allowing improvement in PL characteristics and electrical characteristics of an epitaxial wafer formed using this epitaxial film. The indium phosphide substrate has a first main surface and a second main surface, a surface roughness Ra1 at a center position on the first main surface, and surface roughnesses Ra2, Ra3, Ra4, and Ra5 at four positions arranged equidistantly along an outer edge of the first main surface and located at a distance of 5 mm inwardly from the outer edge. An average value m1 of the surface roughnesses Ra1, Ra2, Ra3, Ra4, and Ra5 is 0.5 nm or less, and a standard deviation ?1 of the surface roughnesses Ra1, Ra2, Ra3, Ra4, and Ra5 is 0.2 nm or less.

Abstract: The present invention provides a method for manufacturing a III-V compound semiconductor substrate, a method for manufacturing an epitaxial wafer, a III-V compound semiconductor substrate, and an epitaxial wafer, wherein the thickness of an oxide film formed on the substrate or in the wafer is controlled with high precision, and surface of the epitaxial wafer is prevented from getting rough,. The method for manufacturing a III-V compound semiconductor substrate according to the present invention includes the following steps. Initially, a substrate composed of a III-V compound semiconductor is provided. Thereafter, the resulting substrate is cleaned with an acidic solution. Subsequently, an oxide film is formed on the substrate by a wet method after the cleaning.

Abstract: A GaAs semiconductor substrate includes a surface layer. When an atomic ratio is to be calculated using a 3d electron spectrum of Ga atoms and As atoms measured at the condition of 10° for the photoelectron take-off angle ? by X-ray photoelectron spectroscopy, the structural atomic ratio of all Ga atoms to all As atoms (Ga)/(As) at the surface layer is at least 0.5 and not more than 0.9, the ratio of As atoms bound with O atoms to all Ga atoms and all As atoms (As—O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35, and the ratio of Ga atoms bound with O atoms to all Ga atoms and all As atoms (Ga—O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35. Accordingly, there is provided a GaAs semiconductor substrate having a surface cleaned to an extent allowing removal of impurities and oxides at the surface by at least thermal cleaning of the substrate.

Abstract: A GaAs semiconductor substrate includes a surface layer. When an atomic ratio is to be calculated using a 3d electron spectrum of Ga atoms and As atoms measured at the condition of 10° for the photoelectron take-off angle ? by X-ray photoelectron spectroscopy, the structural atomic ratio of all Ga atoms to all As atoms (Ga)/(As) at the surface layer is at least 0.5 and not more than 0.9, the ratio of As atoms bound with O atoms to all Ga atoms and all As atoms (As—O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35, and the ratio of Ga atoms bound with O atoms to all Ga atoms and all As atoms (Ga—O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35. Accordingly, there is provided a GaAs semiconductor substrate having a surface cleaned to an extent allowing removal of impurities and oxides at the surface by at least thermal cleaning of the substrate.