Patents by Inventor Yasuaki Kinoshita

Yasuaki Kinoshita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5432842
    Abstract: With respect to a mobile communication system, intelligence learns a cell boundary where the field strength of adjacent base stations becomes equal, by measuring field strength of communications, and from this data determined and stored over a period of time, the intelligence calculates the position and velocity vector of each mobile unit, from which a priority for hand-off can be determined. Hysteresis of the hand-off is determined with respect to hand-off boundaries located a fixed distance from the measured cell boundary, with hand-off preferably being soft hand-off within the narrow hand-off boundaries. Priority is particularly determined using fuzzy logic and calculation of the time estimated for the mobile unit to reach the cell boundary. Battery consumption of the mobile units is improved by prolonging the interval of checking the position of mobile units, when the mobile units are moving slowly or not moving at all.
    Type: Grant
    Filed: March 17, 1992
    Date of Patent: July 11, 1995
    Assignee: Hitachi, Ltd.
    Inventors: Yasuaki Kinoshita, Arata Nakagoshi, Hideya Suzuki, Hideo Nakasawa, Yukinari Fujiwara, Michiaki Kurosawa
  • Patent number: 5168254
    Abstract: A magnetostatic wave device has a nonmagnetic substrate, a magnetic thin film formed on the nonomagnetic substrate, and a plurality of electrodes. By applying a magnetic field from the outside in parallel with or perpendicularly to the magnetic thin film, a magnetostatic wave is excited in the magnetic thin film and is propagated. The magnetostatic wave is coupled with a microwave signal generating circuit by a plurality of (n) electrodes. The plurality which are arranged at positions where the microwave signal is not substantially coupled with the second to (n+l)th order mode of the magnetostatic wave.
    Type: Grant
    Filed: November 16, 1990
    Date of Patent: December 1, 1992
    Assignees: Hitachi Metals, Ltd., Hitachi, Ltd.
    Inventors: Kohei Ito, Shigeru Takeda, Yasuhide Murakami, Yasuaki Kinoshita
  • Patent number: 5053734
    Abstract: A magnetostatic wave device comprises a magnetic thin film formed on a non-magnetic substrate, one or a plurality of electrode fingers and pad electrodes formed on the above described magnetic thin film, a magnetostatic wave resonator for exciting and propagating a magnetostatic wave within said magnetic thin film and for causing resonance, and a matching stub connected to at least one of the above described pad electrodes of the above described magnetostatic wave resonator to adjust the impedance of the magnetostatic wave device.
    Type: Grant
    Filed: March 22, 1990
    Date of Patent: October 1, 1991
    Assignees: Hitachi Metals, Ltd., Hitachi, Ltd., Nippon Ferrite, Ltd.
    Inventors: Yasuhide Murakami, Shigeru Takeda, Kohei Ito, Yasuaki Kinoshita, Sadami Kubota
  • Patent number: 4992760
    Abstract: A chip for a magnetostatic wave device comprising; a base substrate consisting of a dielectric monocrystalline base plate and a ferrimagnetic monocrystalline film formed on the base plate; an excitation means for magnetostatic waves formed on the ferrimagnetic film when it is given a bias magnetic field and high frequency electric signals; and a reflection means to reflect the excited magnetostatic wave toward the center portion of the film before it reaches at end portions of the ferrimagnetic film.
    Type: Grant
    Filed: November 21, 1988
    Date of Patent: February 12, 1991
    Assignees: Hitachi Metals, Ltd., Hitachi, Ltd., Hitachi Ferrite, Ltd.
    Inventors: Shigeru Takeda, Kohei Ito, Yasuaki Kinoshita, Sadami Kubota
  • Patent number: 4983937
    Abstract: A magnetostatic wave band-pass-filter is disclosed which uses a planar structure, it has, a single crystal thin film formed on a single crystal gadolinium gallium garnet substrate and mainly containing yttrium iron garnet. In this band-pass-filter, input and output electrodes each made up of finger electrodes and pad electrodes are formed on the substrate or thin film, a high-frequency signal is applied to the input electrode, to excite a magnetostatic wave in the thin film, the magnetostatic wave is reflected from parallel straight edges of the thin film, to generate resonance, and a high-frequency current excited by the magnetostatic wave is taken out by the output electrode.
    Type: Grant
    Filed: July 5, 1989
    Date of Patent: January 8, 1991
    Assignees: Hitachi, Ltd., Hitachi Metals, Ltd.
    Inventors: Yasuaki Kinoshita, Sadami Kubota, Shigeru Takeda
  • Patent number: 4790000
    Abstract: In order to make it possible to communicate between a portable radio telephone set through an existing public cellular radio telephone system and a private radio telephone system disposed inside the cells of the public cellular radio telephone system, an antenna and a transceiver for connecting the antenna to the private radio telephone system are disposed in each cell, and the transmitting power from the antenna and the transmitting power from the portable telephone set are set so that they do not impart interference waves to the public cellular radio telephone system.
    Type: Grant
    Filed: December 10, 1986
    Date of Patent: December 6, 1988
    Assignee: Hitachi, Ltd.
    Inventor: Yasuaki Kinoshita
  • Patent number: 4743874
    Abstract: A magnetostatic wave tunable resonator which has fine stripe electrodes and bonding electrode films formed on the surface of a YIG thin film supported by a GGG substrate. The stripe electrodes, bonding electrode films and edges of the YIG film are formed by a chemical etching method based on photolithography. The resonator so formed has suppressed spurious resonance of high order modes and enables the use of a magnet of greatly reduced size.
    Type: Grant
    Filed: April 17, 1987
    Date of Patent: May 10, 1988
    Assignees: Hitachi, Ltd., Hitachi Video Eng. Inc.
    Inventors: Yasuaki Kinoshita, Satoshi Sugawara
  • Patent number: 4263571
    Abstract: A broad-band surface acoustic wave filter of turn reflector type in which the number N of thin film finger or stripe electrode pairs in at least one transducer is selected to satisfy N=F/k.sup.2 to obtain a flat selected band in the frequency response, where F is the constant determined by the material of the used piezo-electric substrate and "k.sup.2 " is the electro-mechanical coupling coefficient.
    Type: Grant
    Filed: November 15, 1979
    Date of Patent: April 21, 1981
    Assignee: Hitachi, Ltd.
    Inventors: Yasuaki Kinoshita, Mitsutaka Hikita
  • Patent number: 4255726
    Abstract: A surface acoustic wave filter having transmitting and receiving transducers, coupling transducers, as well as reflecting transducers which are arrayed on a piezo-electric substrate. The coupling transducers are so designed as to function as 3-dB directional couplers in order to obtain frequency characteristics over a wide range without developing ripples.
    Type: Grant
    Filed: March 7, 1979
    Date of Patent: March 10, 1981
    Assignee: Hitachi, Ltd.
    Inventors: Yasuaki Kinoshita, Toyoji Tabuchi