Abstract: A production method of monocrystalline silicon includes: growing the monocrystalline silicon having a straight-body diameter in a range from 301 mm to 330 mm that is pulled up through a Czochralski process from a silicon melt including a dopant in a form of arsenic; controlling a resistivity of the monocrystalline silicon at the straight-body start point to fall within a range from 2.50 m?cm to 2.90 m?cm; and subsequently sequentially decreasing the resistivity of the monocrystalline silicon to fall within a range from 1.6 m?cm to 2.0 m?cm at a part of the monocrystalline silicon.

Abstract: A method of growing monocrystalline silicon through a Czochralski process uses a monocrystalline silicon growth device, the device including: a chamber; a crucible; a heater configured to heat a silicon melt contained in the crucible, in which the heater includes: an upper heater configured to heat an upper portion of the crucible; and a lower heater configured to heat a lower portion of the crucible; and a pull-up unit configured to pull up a seed crystal after bringing the seed crystal into contact with the silicon melt. The method includes: adding a volatile dopant to the silicon melt; and subsequently to the step, pulling up the monocrystalline silicon. In the step, the crucible is heated in a manner that no solidified layer is formed on a liquid surface of the silicon melt and heat generation amounts Qd, Qu of the lower heater and the upper heater satisfy Qd>Qu.

Abstract: A production method of monocrystalline silicon includes: growing the monocrystalline silicon having a straight-body diameter in a range from 301 mm to 330 mm that is pulled up through a Czochralski process from a silicon melt including a dopant in a form of red phosphorus; controlling a resistivity of the monocrystalline silicon at a straight-body start point to fall within a range from 1.20 m?cm to 1.35 m?cm; and subsequently sequentially decreasing the resistivity of the monocrystalline silicon to fall within a range from 0.7 m?cm to 1.0 m?cm at a part of the monocrystalline silicon.

Abstract: A method for producing an n-type monocrystalline silicon that includes pulling up a monocrystalline silicon from a silicon melt containing a main dopant in a form of red phosphorus to grow the monocrystalline silicon. The monocrystalline silicon exhibits an electrical resistivity ranging from 1.7 m?cm to 2.0 m?cm, and is pulled up using a quartz crucible whose inner diameter ranges from 1.7-fold to 2.0-fold relative to a straight-body diameter of the monocrystalline silicon.

Abstract: In a producing method of an n-type monocrystalline silicon by pulling up a monocrystalline silicon from a silicon melt containing a main dopant in a form of red phosphorus to grow the monocrystalline silicon, the monocrystalline silicon exhibiting an electrical resistivity ranging from 0.5 m?cm to 1.0 m?cm is pulled up using a quartz crucible whose inner diameter ranges from 1.7-fold to 2.3-fold relative to a straight-body diameter of the monocrystalline silicon.

Abstract: An n-type silicon single crystal production method of pulling up a silicon single crystal from a silicon melt containing red phosphorus as a principal dopant and growing the silicon single crystal by the Czochralski process, the method including: controlling electrical resistivity at a start position of a straight body portion of the silicon single crystal to 0.80 m?cm or more and 1.05 m?cm or less; and sequentially lowering the electrical resistivity of the silicon single crystal as the silicon single crystal is up and grown, thereby adjusting electrical resistivity of a part of the silicon single crystal to 0.5 m?m or more and less than 0.6 m?cm.

Abstract: A silicon single crystal production method includes pulling up and growing a silicon single crystal from silicon melt containing red phosphorus as a dopant by Czochralski process. The silicon single crystal is intended for a 200-mm-diameter wafer. The silicon single crystal includes a straight body with a diameter in a range from 201 mm to 230 mm. The straight body includes a straight-body start portion with an electrical resistivity in a range from 0.8 m?cm to 1.2 m?cm. A crystal rotation speed of the silicon single crystal is controlled to fall within a range from 17 rpm to 40 rpm for at least part of a shoulder-formation step for the silicon single crystal.

Abstract: A production method of monocrystalline silicon includes: growing the monocrystalline silicon having a straight-body diameter in a range from 301 mm to 330 mm that is pulled up through a Czochralski process from a silicon melt including a dopant in a form of red phosphorus; controlling a resistivity of the monocrystalline silicon at a straight-body start point to fall within a range from 1.20 m?cm to 1.35 m?cm; and subsequently sequentially decreasing the resistivity of the monocrystalline silicon to fall within a range from 0.7 m?cm to 1.0 m?cm at a part of the monocrystalline silicon.

Abstract: A manufacturing method of monocrystalline silicon includes: disposing a flow regulator including a body in a form of an annular plate, provided under a heat shield, surrounding monocrystalline silicon; controlling an internal pressure of a chamber to 20 kPa or more during growth of monocrystalline silicon; keeping the flow regulator spaced from a dopant-added melt; and introducing inert gas into between the monocrystalline silicon and the heat shield to divide the inert gas into a first flow gas and a second flow gas.

Abstract: An n-type silicon single crystal production method of pulling up a silicon single crystal from a silicon melt containing red phosphorus as a principal dopant and growing the silicon single crystal by the Czochralski process, the method including: controlling electrical resistivity at a start position of a straight body portion of the silicon single crystal to 0.80 m?cm or more and 1.05 m?cm or less; and sequentially lowering the electrical resistivity of the silicon single crystal as the silicon single crystal is up and grown, thereby adjusting electrical resistivity of a part of the silicon single crystal to 0.5 m?m or more and less than 0.6 m?cm.

Abstract: In a back window part seal structure for a vehicle with a retractable roof wherein a weather strip is used, an outer panel provided on a deck cover includes an upper overlap portion that covers a weather strip at an upper edge of a back window from diagonally above and behind the vehicle to improve the sealing property and achieve a configuration in which the assembly failure is less likely to occur.

Abstract: In a producing method of an n-type monocrystalline silicon by pulling up a monocrystalline silicon from a silicon melt containing a main dopant in a form of red phosphorus to grow the monocrystalline silicon, the monocrystalline silicon exhibiting an electrical resistivity ranging from 0.5 m?cm to 1.0 m?cm is pulled up using a quartz crucible whose inner diameter ranges from 1.7-fold to 2.3-fold relative to a straight-body diameter of the monocrystalline silicon.

Abstract: A production method of a monocrystalline silicon includes adding red phosphorus in a silicon melt so that an electrical resistivity of the monocrystalline silicon falls in a range of 0.5 m?·cm or more and less than 0.7 m?·cm; and pulling up the monocrystalline silicon so that a time for a temperature of at least a part of a straight body of the monocrystalline silicon to be within a range of 570 degrees C. 70 degrees C. is in a range from 10 minutes to 50 minutes.

Abstract: A silicon single crystal production method includes pulling up and growing a silicon single crystal from silicon melt containing red phosphorus as a dopant by Czochralski process. The silicon single crystal is intended for a 200-mm-diameter wafer. The silicon single crystal includes a straight body with a diameter in a range from 201 mm to 230 mm. The straight body includes a straight-body start portion with an electrical resistivity in a range from 0.8 m?cm to 1.2 m?cm. A crystal rotation speed of the silicon single crystal is controlled to fall within a range from 17 rpm to 40 rpm for at least part of a shoulder-formation step for the silicon single crystal.

Abstract: A manufacturing method of monocrystalline silicon includes: disposing a flow regulator including a body in a form of an annular plate, provided under a heat shield, surrounding monocrystalline silicon; controlling an internal pressure of a chamber to 20 kPa or more during growth of monocrystalline silicon; keeping the flow regulator spaced from a dopant-added melt; and introducing inert gas into between the monocrystalline silicon and the heat shield to divide the inert gas into a first flow gas and a second flow gas.

Abstract: There are provided a front roof, a rear roof, a glass unit including a rear-window glass, a rear roof support link which openably supports the rear roof at a vehicle body, a front-roof support link mechanism which openably supports the front roof, the front-roof support link mechanism being connected to the rear roof support link such that closed states of both the front roof and the rear roof are achieved by means of the rear roof support link and the front-roof support link mechanism, and a glass-unit support link mechanism which is connected to the rear roof support link and configured to support the glass unit in a closed position.

Abstract: In a back window part seal structure for a vehicle with a retractable roof wherein a weather strip is used, an outer panel 35 provided on a deck cover 18 includes an upper overlap portion 36 that covers a weather strip 40 at an upper edge of a back window 15 from diagonally above and behind the vehicle to improve the sealing property and achieve a configuration in which the assembly failure is less likely to occur.

Abstract: There are provided a front roof, a rear roof, a glass unit including a rear-window glass, a rear roof support link which openably supports the rear roof at a vehicle body, a front-roof support link mechanism which openably supports the front roof, the front-roof support link mechanism being connected to the rear roof support link such that closed states of both the front roof and the rear roof are achieved by means of the rear roof support link and the front-roof support link mechanism, and a glass-unit support link mechanism which is connected to the rear roof support link and configured to support the glass unit in a closed position.

Abstract: There are provided a front roof, a rear roof, a glass unit including a rear-window glass, a rear roof support link which openably supports the rear roof at a vehicle body, a front-roof support link mechanism which openably supports the front roof, the front-roof support link mechanism being connected to the rear roof support link such that closed states of both the front roof and the rear roof are achieved by means of the rear roof support link and the front-roof support link mechanism, and a glass-unit support link mechanism which is connected to the rear roof support link and configured to support the glass unit in a closed position.

Abstract: There are provided a front roof, a rear roof, a glass unit including a rear-window glass, a rear roof support link which openably supports the rear roof at a vehicle body, a front-roof support link mechanism which openably supports the front roof, the front-roof support link mechanism being connected to the rear roof support link such that closed states of both the front roof and the rear roof are achieved by means of the rear roof support link and the front-roof support link mechanism, and a glass-unit support link mechanism which is connected to the rear roof support link and configured to support the glass unit in a closed position.