Abstract: An antenna device includes: a dielectric layer; radiation conductors and a ground conductor disposed at the dielectric layer; and side surface conductors in which a plurality of conductor patterns are laminated, the side surface conductors are disposed on an outer side of the ground conductors in a first direction in plan view seen from a normal direction of the radiation conductors, and the dimensions of the side surface conductors in a second direction perpendicular to the first direction are larger than the dimensions in the second direction of the radiation conductors.

Abstract: An antenna device includes: a dielectric layer; radiation conductors provided to the dielectric layer; and a plurality of columnar conductors disposed around the radiation conductor in plan view seen from a normal direction of the radiation conductor, and peripheral conductors are disposed on an outer side of the plurality of columnar conductors in plan view seen from the normal direction.

Abstract: Provided is a fixing rotating member capable of maintaining high toner releasability over longer periods of time than in conventional instances and that is capable of maintaining abrasion resistance against paper; the fixing rotating member comprises a base layer, an elastic layer, and a surface layer, in this order; the surface layer containing a tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer and a perfluoropolyether; the tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer having pores formed therein; the surface layer has pores with openings at a first surface thereof, and constituting an outer surface of the fixing rotating member; at least part of the pores containing the perfluoropolyether; a content of the perfluoropolyether in the surface layer is 20 mass % to 60 mass %; and a degree of orientation A of molecules of the tetrafluoroethylene-perfluoroalkyl vinyl ether in a direction perpendicular to a circumferential direction of the surface layer is 35 to 75%.

Abstract: A fixing rotating member comprising a base layer, an elastic layer and a surface layer, in this order, the surface layer containing PFA and PFPE, and having pores with openings at a first surface; at least part of the pores containing the PFPE, wherein when after removing the PFPE in the pores, placing a first observation region on the first surface, defining a ratio of a sum of areas of the openings in the first observation region relative to an area of the first observation region as P1; and placing a second observation region in a cross section of the surface layer, and defining a ratio of a sum of areas of the pores in the second observation region relative to an area of the second observation region as P2, P2/P1 is 1.3 or higher.

Abstract: A glass ceramic sintered body having a small dielectric loss in a high frequency band of 10 GHz or higher and a wiring substrate using the same are provided. The glass ceramic sintered body contains crystallized glass, an alumina filler, and silica. The content of the crystallized glass is 45 mass % to 85 mass %, the content of the alumina filler is 14.8 mass % to 50.1 mass % in terms of Al2O3, and the content of silica is 0.2 mass % to 4.9 mass % in terms of SiO2.

Abstract: A glass ceramic sintered body having a small dielectric loss in a high frequency band of 10 GHz or higher and stable characteristics against temperature variation and a wiring substrate using the same are provided. The glass ceramic sintered body contains crystallized glass, an alumina filler, silica, and strontium titanate. The content of the crystallized glass is 50 mass % to 80 mass %, the content of the alumina filler is 15.6 mass % to 31.2 mass % in terms of Al2O3, the content of silica is 0.4 mass % to 4.8 mass % in terms of SiO2, and the content of the strontium titanate is 4 mass % to 14 mass % in terms of SrTiO3.

Abstract: A glass ceramic sintered body having a small dielectric loss in a high frequency band of 10 GHz or higher and stable characteristics against temperature variation and a wiring substrate using the same are provided. The glass ceramic sintered body contains crystallized glass, an alumina filler, silica, and strontium titanate. The content of the crystallized glass is 50 mass % to 80 mass %, the content of the alumina filler is 15.6 mass % to 31.2 mass % in terms of Al2O3, the content of silica is 0.4 mass % to 4.8 mass % in terms of SiO2, and the content of the strontium titanate is 4 mass % to 14 mass % in terms of SrTiO3.

Abstract: A glass ceramic sintered body having a small dielectric loss in a high frequency band of 10 GHz or higher and a wiring substrate using the same are provided. The glass ceramic sintered body contains crystallized glass, an alumina filler, and silica. The content of the crystallized glass is 45 mass % to 85 mass %, the content of the alumina filler is 14.8 mass % to 50.1 mass % in terms of Al2O3, and the content of silica is 0.2 mass % to 4.9 mass % in terms of SiO2.

Abstract: A dielectric filter includes a plurality of dielectric resonators. The dielectric filter also includes: a plurality of resonator body portions each formed of a first dielectric and respectively corresponding to the plurality of dielectric resonators, the first dielectric having a first relative permittivity; a peripheral dielectric portion formed of a second dielectric and lying around the plurality of resonator body portions, the second dielectric having a second relative permittivity lower than the first relative permittivity; and a shield portion formed of a conductor. Either one of a temperature coefficient of resonant frequency of the first dielectric at 25° C. to 85° C. and a temperature coefficient of resonant frequency of the second dielectric at 25° C. to 85° C. has a positive value and the other has a negative value.

Abstract: A dielectric filter includes a plurality of dielectric resonators. The dielectric filter also includes: a plurality of resonator body portions each formed of a first dielectric and respectively corresponding to the plurality of dielectric resonators, the first dielectric having a first relative permittivity; a peripheral dielectric portion formed of a second dielectric and lying around the plurality of resonator body portions, the second dielectric having a second relative permittivity lower than the first relative permittivity; and a shield portion formed of a conductor. Either one of a temperature coefficient of resonant frequency of the first dielectric at 25° C. to 85° C. and a temperature coefficient of resonant frequency of the second dielectric at 25° C. to 85° C. has a positive value and the other has a negative value.

Abstract: A chip and a method for manufacturing a chip are disclosed. In an embodiment, the chip includes a varistor layer composed of zinc oxide, a multilayered electrode structure which realizes a varistor function in the varistor layer and at least two solderable or bondable external contacts on a first main surface of the varistor layer. The chip further includes a glass layer disposed on the first main surface leaving only the external contacts uncovered, wherein the glass layer includes, as main constituents, oxides of Si and/or Ge, B and K, which in total have at least 70% by weight of the constituents of the glass layer, and wherein the glass layer is substantially free of Al, Ga, Cr and Ti.

Abstract: For a carrier plate, it is proposed to brace a first ceramic functional layer over a connecting layer (VS) with a ceramic stressing layer (SPS) in order to reduce the lateral sintering shrinkage. The functional layer (FS) and the stressing layer (SPS) are glass-free or have only a small glass content of less than 5 wt %, whereas the connecting layer (VS) comprises a glass component or is a glass layer.

Abstract: A chip and a method for manufacturing a chip are disclosed. In an embodiment, the chip includes a varistor layer composed of zinc oxide, a multilayered electrode structure which realizes a varistor function in the varistor layer and at least two solderable or bondable external contacts on a first main surface of the varistor layer. The chip further includes a glass layer disposed on the first main surface leaving only the external contacts uncovered, wherein the glass layer includes, as main constituents, oxides of Si and/or Ge, B and K, which in total have at least 70% by weight of the constituents of the glass layer, and wherein the glass layer is substantially free of Al, Ga, Cr and Ti.

Abstract: A ceramic electronic component includes a first dielectric layer, a second dielectric layer, and a boundary reaction layer. The first dielectric layer is a layer containing BaO, Nd2O3, and TiO2, the second dielectric layer is a layer containing a material different from the material of the first dielectric layer, and the boundary reaction layer is a layer formed between the first dielectric layer and the second dielectric layer and containing at least one of Zn, Ti, Cu, and Mg.

Abstract: Provided is a dielectric ceramic that includes a main component which contains Mg2SiO4 and additives which contain a zinc oxide and a glass component, in which, in X-ray diffraction. The peak intensity ratio, IB/IA, of the X-ray diffraction peak intensity IB of zinc oxide remaining unreacted, for which 2? is between 31.0° and 32.0° and between 33.0° and 34.0°, with respect to the peak intensity IA of Mg2SiO4 as the main phase, for which 2? is between 36.0° and 37.0°, is 10% or less. The dielectric ceramic has a relative density of 96% or greater.

Abstract: A ceramic electronic component includes a first dielectric layer, a second dielectric layer, and an intermediate layer. The first dielectric layer is a layer containing BaO, Nd2O3, and TiO2, the second dielectric layer is a layer containing a different material from the material of the first dielectric layer, and the intermediate layer is a layer formed between the first dielectric layer and the second dielectric layer and containing main components that are not contained in the first dielectric layer and the second dielectric layer in common as the main components.

Abstract: An electronic component 100 which includes: a dielectric body (a ceramic substrate) 110 containing a dielectric ceramic composition containing Al2TeO5 as a main component; and terminals 120 each provided on a pair of opposed side surfaces of the dielectric body 110 is provided.

Abstract: A dielectric ceramic includes a main component and a minor component. The main component includes a BaTi4O9 crystal phase and a Ba2Ti9O20 crystal phase, is represented by BaO.xTiO2, has a molar ratio x of TiO2 to BaO of 4.6 to 8.0, and in X-ray diffraction, and has an X-ray diffraction peak intensity ratio I29/I14 of a maximum diffraction peak intensity (I14) of the BaTi4O9 crystal phase to a maximum diffraction peak intensity (W of the Ba2Ti9O20 crystal phase of 1 or more. The minor component includes a boron oxide and a copper oxide, in which the boron oxide content is in the range of 0.5 to 5.0 parts by mass with respect to 100 parts by mass of the main component, and the copper oxide content is in the range of 0.1 to 3.0 parts by mass with respect to 100 parts by mass of the main component.

Abstract: A dielectric porcelain composition contains a major component represented by a composition formula (BaO.xTiO2). The dielectric porcelain composition contains also contains a first minor component represented by a composition formula raB2O3 and a second minor component represented by a composition formula rbCuO. In the formulae, x is a molar ratio of TiO2 to BaO and is within a range of 4.6 to 8, ra is a weight ratio of B2O3 with respect to the major component and is within a range of 0.5 to 5% by mass, and rb is a weight ratio of CuO with respect to the major component and is within a range of 0.1 to 3% by mass.

Abstract: A ceramic substrate is provided as one having a large coefficient of thermal expansion ?, having properties suitable for use as a high-frequency substrate, being capable of being fired at a low temperature, and having an excellent substrate strength. The ceramic substrate has a main composition containing Mg2SiO4 and a low-temperature-fired component, has the coefficient of thermal expansion a of not less than 9.0 ppm/° C., and contains up to 25 vol. % (excluding zero) ZnAl2O4 or up to 7 vol. % (excluding zero) Al2O3. A dielectric-porcelain composition is provided as one being capable of being fired at a temperature lower than a melting point of an Ag-based metal and being capable of demonstrating a sufficient bending strength even through firing at a low firing temperature. The dielectric-porcelain composition contains Mg2SiO4 as a major component and contains a zinc oxide, a boron oxide, an alkaline earth metal oxide, a copper compound, and a lithium compound as minor components.