Abstract: There is a film forming apparatus comprising: a first holder holding a first target formed of a first material; a second holder holding a second target formed of a second material different from the first material; and a mounting table holding a substrate, the mounting table rotatable with a central axis of the mounting table as a rotation axis, wherein a distance from the central axis of the mounting table to a center of a sputter surface of the first target is different from a distance from the central axis of the mounting table to a center of a sputter surface of the second target.

Abstract: A film forming apparatus comprises a processing chamber connected to a ground potential, a holder configured to hold a target, a DC power supply configured to apply a DC voltage to the holder and an anti-adhesion shield disposed to surround the target and supported by the processing chamber through an insulating member. An impedance matcher is connected to the anti-adhesion shield and an RF power supply is connected to the impedance matcher.

Abstract: A film forming apparatus includes: a processing container; a substrate holder that holds the substrate in the processing container; and a target assembly disposed in an upper side of the substrate holder. The target assembly includes: a target made of metal, including a main body and a flange provided around the main body, and emitting sputter particles from the main body; a target holder including a target electrode configured to supply power to the target, and holding the target; a target clamp that clamps the flange of the target to the target holder; and an anti-deposition shield provided around the main body of the target to cover the flange, the target clamp, and the target holder, and having a labyrinth structure in which an inner tip end thereof is disposed to enter a recess between the main body of the target and the target clamp.

Abstract: A substrate processing apparatus includes: a stage including an electrostatic chuck configured to attract a substrate; a heater configured to heat the stage; a heating drive part configured to supply power to the heater so that a temperature of the stage becomes a target value; and a detector configured to detect an abnormality in attraction of the substrate by the electrostatic chuck, wherein the detector is further configured to detect the abnormality based on fluctuation of the power supplied to the heater, the fluctuation being generated by the attraction of the substrate by the electrostatic chuck.

Abstract: A substrate processing apparatus includes: a stage having an electrostatic chuck configured to attract a substrate; a measurement part configured to measure a temperature of the stage; and a detection part configured to detect an abnormality caused by attraction of the substrate by the electrostatic chuck, based on a fluctuation of the temperature of the stage.

Abstract: A film forming apparatus includes: a processing container; a substrate holder that holds the substrate in the processing container; and a target assembly disposed in an upper side of the substrate holder. The target assembly includes: a target made of metal, including a main body and a flange provided around the main body, and emitting sputter particles from the main body; a target holder including a target electrode configured to supply power to the target, and holding the target; a target clamp that clamps the flange of the target to the target holder; and an anti-deposition shield provided around the main body of the target to cover the flange, the target clamp, and the target holder, and having a labyrinth structure in which an inner tip end thereof is disposed to enter a recess between the main body of the target and the target clamp.

Abstract: A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.

Abstract: System and method of insulating film deposition. A sputter deposition chamber comprises a pair of targets made of the same insulating material. Each target is applied with a high frequency power signal concurrently. A phase adjusting unit is used to adjust the phase difference between the high frequency power signals supplied to the pair of targets to a predetermined value, thereby improving the in-plane thickness distribution of a resultant film. The predetermined value is target material specific.

Abstract: A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.

Abstract: In a chemical plant 100 including a carbon dioxide recovery unit 10 and a urea plant 11, the carbon dioxide recovery unit 10 treats combustion exhaust gas from a boiler B to separate and recover carbon dioxide. Low-pressure steam 33 generated in the urea plant 11 is supplied to the carbon dioxide recovery unit 10 as a heat source for its regeneration tower reboiler. Carbon dioxide 22 recovered in the carbon dioxide recovery unit 10 is sent to an EOR facility, a storage facility, and the like outside the plant. Thus, the low-pressure steam generated in the urea plant 11 is effectively used as a heat source for the carbon dioxide recovery unit 10.

Abstract: To provide a rubber composition capable of sufficiently abrading a sealing lip while sliding it in an initial stage of rotation and sufficiently reducing a running torque, and further capable of securing a sufficient sealing property. The composition includes a first compounding ingredient which is one or more kinds selected from the group consisting of calcium carbonate, magnesium oxide, aluminum oxide and barium sulfate in an amount of 50 to 200 parts by mass based on 100 parts by mass of a rubber component, and a second compounding ingredient which is one or two kinds selected from the group consisting of carbon black and a silica in an amount of more than 0 parts by mass and 50 parts by mass or lower.

Abstract: System and method of insulating film deposition. A sputter deposition chamber comprises a pair of targets made of the same insulating material. Each target is applied with a high frequency power signal concurrently. A phase adjusting unit is used to adjust the phase difference between the high frequency power signals supplied to the pair of targets to a predetermined value, thereby improving the in-plane thickness distribution of a resultant film. The predetermined value is target material specific.

Abstract: In a film forming method for forming a Co film on a substrate provided in a processing chamber, gaseous Co4(CO)12 as a single film forming material is supplied into the processing chamber. Then, the gaseous Co4(CO)12 is thermally decomposed on the substrate to form the Co film on the substrate.

Abstract: A granulator, having a granulation unit having a bottom floor with a perforated plate as its bottom part; an upper air-supplying pipe for supplying a fluidizing air to the bottom of the granulation unit; a lower air-supplying pipe; air-spouting pipes, each of which is branched from the lower air-supplying pipe, and has an opening in the bottom of the perforated plate, for jetting the air into the granulation unit; and spray nozzles for spraying a granulation raw material liquid, which each are provided in the center of an air outlet of the air-spouting pipe, or having: the bottom; the air-supplying pipe; and spray nozzles for spraying a granulation raw material liquid each of which are provided in an opening in the bottom of the perforated plate, and use a high-pressure atomizing air as an auxiliary gas, with the spray nozzles being provided in a triangular arrangement.

Abstract: A film forming method includes mounting a substrate on a mounting member after loading the substrate into a reaction chamber, adsorbing a compound of a first metal on a surface of the substrate by supplying a source gas containing the compound of the first metal into the reaction chamber, reducing the compound of the first metal adsorbed on the substrate by making a reducing gas contact therewith to thereby obtain a first metal layer, and alloying the first metal and a second metal to obtain an alloy layer of the first metal and the second metal by injecting the second metal into the first metal layer. The second metal is ejected from a target electrode facing the substrate by making a sputtering plasma contact with the target electrode, and at least a surface of the target electrode is formed of the second metal different from the first metal.

Abstract: In a method for forming a Cu film, a CVD Cu film is formed on a CVD-Ru film that is formed on a wafer W. In the method, the wafer W having the CVD-Ru film is loaded into a chamber 1, and a film-forming source material in a vapor state is introduced into the chamber 1. The film-forming source material includes Cu(hfac)TMVS that is a Cu complex having a vapor pressure higher than that of Cu(hfac)2 produced as a by-product during the film formation. When the CVD-Cu film is formed, the pressure within the chamber 1 is controlled to a pressure at which the desorption and diffusion of Cu(hfac)2 adsorbed on the surface of the CVD Ru film proceed.

Abstract: The present invention provides a medicinal agent and a method for each of various testing or the like, which enable the treatment and prevention, particularly preventive treatment, of Th3 march-related diseases. The present invention also provides a pharmaceutical composition for treating and/or preventing Th3 march-related diseases, which comprises zinc, calcium and phosphorus and additionally comprises pumpkin seeds and corn silk, and which preferably can activate the DNA repairing ability of a zinc finger, particularly the ability of repairing defect or mutation of DNA for a filaggrin gene, of a zinc finger.

Abstract: To provide a rubber composition capable of sufficiently abrading a sealing lip while sliding it in an initial stage of rotation and sufficiently reducing a running torque, and further capable of securing a sufficient sealing property. The composition includes a first compounding ingredient which is one or more kinds selected from the group consisting of calcium carbonate, magnesium oxide, aluminum oxide and barium sulfate in an amount of 50 to 200 parts by mass based on 100 parts by mass of a rubber component, and a second compounding ingredient which is one or two kinds selected from the group consisting of carbon black and a silica in an amount of more than 0 parts by mass and 50 parts by mass or lower.

Abstract: A granulator, having a granulation unit having a bottom floor with a perforated plate as its bottom part; an upper air-supplying pipe for supplying a fluidizing air to the bottom of the granulation unit; a lower air-supplying pipe; air-spouting pipes, each of which is branched from the lower air-supplying pipe, and has an opening in the bottom of the perforated plate, for jetting the air into the granulation unit; and spray nozzles for spraying a granulation raw material liquid, which each are provided in the center of an air outlet of the air-spouting pipe, or having: the bottom; the air-supplying pipe; and spray nozzles for spraying a granulation raw material liquid each of which are provided in an opening in the bottom of the perforated plate, and use a high-pressure atomizing air as an auxiliary gas, with the spray nozzles being provided in a triangular arrangement.

Abstract: In a film forming method for forming a Co film on a substrate provided in a processing chamber, gaseous Co4(CO)12 as a single film forming material is supplied into the processing chamber. Then, the gaseous Co4(CO)12 is thermally decomposed on the substrate to form the Co film on the substrate.