Abstract: An electric discharge machining unit capable of stably supplying working fluid to the vicinity of a portion to be machined. The electric discharge machining unit includes a tool electrode, a housing, an electrode guide, and a working fluid supplying device. The housing includes a fitting hole having a tapered surface. A first supply path is formed in the housing. The electrode guide includes a tapered portion and an ejection opening formed on a lower surface. A first flow path is formed in the electrode guide. The tapered portion is configured to be fitted into the fitting hole to connect the first flow path to the first supply path. The working fluid supplied from the working fluid supplying device to the first supply path and the first flow path is ejected from the ejection opening.

Abstract: One embodiment relates to a method for manufacturing a cell suspension, the method including (A), (B) and (C) described below: (A) culturing adherent cells in a cell suspension containing the adherent cells, a microcarrier and a medium, and having a volume of at least 0.3 L, (B) culturing the adherent cells in a cell suspension containing the adherent cells obtained through (A), a microcarrier and a medium, and having a volume of at least 5 L, and (C) culturing the adherent cells in a cell suspension containing the adherent cells obtained through (B), a microcarrier and a medium, and having a volume of at least 10 L.

Abstract: One aspect of the present disclosure relates to a method for manufacturing a spun yarn made of carbon nanotubes. The method includes: a spun yarn precursor ? production step of producing a spun yarn precursor ? by pulling a plurality of carbon nanotubes from a carbon nanotube forest and spinning the carbon nanotubes while applying a tension of 6 mN or less per centimeter of a width of the carbon nanotube forest to the carbon nanotubes; a spun yarn precursor ? production step of producing a spun yarn precursor ? by applying a higher tension than in the spun yarn precursor ? production step to the spun yarn precursor ? to densify the spun yarn precursor ?; and a spun yarn production step of producing the spun yarn by electrically heating the spun yarn precursor ? while applying a tension to the spun yarn precursor ?.

Abstract: Apparatus, system, and method are disclosed for cell recovery or cell separation. A cell separation system has at least a first container having a first filter for separating a first removal target from a suspension comprising cells and a removal target including at least the first removal target and a second removal target; a cell separation apparatus; a first flow path connecting the first container and the cell separation apparatus; and a first pump interposed in the first flow path for transferring the suspension from the first container to the cell separation apparatus by decompression suction, for example.

Abstract: A first-aid information provision system of the example embodiments includes: an information display device that includes first capture means for capturing an iris image, code acquisition means for acquiring a code associated with the captured iris image, and code display means for displaying the acquired code; and an information output device that includes second capture means for imaging the code displayed by the information display device, first-aid information acquisition means for acquiring first-aid information about an individual associated with the iris image by using the imaged code, and first-aid information output means for outputting the first-aid information.

Abstract: An autonomous driving vehicle that is a mobile unit according to this disclosure is a mobile unit configured to transport a user to a facility that provides services or commercial products and, at the same time, configured to perform an advertising activity for the services or the commercial products of the facility. The mobile unit includes a control unit configured to acquire data for providing a promotion in the mobile unit and is configured to provide a promotion in the mobile unit based on the acquired data. The promotion is related to the services and the commercial products at the facility.

Abstract: Provided is an insect odorant receptor co-receptor that exhibits excellent detection sensitivity to an odorous substance when bound to an odorant receptor to form an odorant receptor complex. The odorant receptor co-receptor includes a first amino acid sequence and a second amino acid sequence subsequently to the farthest carboxyl-terminal amino acid residue of the first amino acid sequence.

Abstract: A microcomputer includes a central processing unit (CPU) and a data transfer controller (DTC). The data transfer controller (DTC) reads out data transfer information including transfer mode information from a storage device (RAM) or the like. The data transfer controller (DTC) analyzes the transfer mode information to change at least one of a transfer source address, a transfer destination address, the number of transfer operations, and data transfer information that is used next.

Abstract: The present invention provides a voltage generation circuit which outputs high-precision output voltage in a wide temperature range. A semiconductor device has a voltage generation circuit. The voltage generation circuit has a reference voltage generation circuit which outputs reference voltage, and a plurality of correction circuits for generating a correction current and making it fed back to the reference voltage generation circuit. The correction circuits generate sub correction currents which monotonously increase from predetermined temperature which varies among the correction circuits toward a low-temperature side or a high-temperature side. The correction current is sum of a plurality of sub correction currents.

Abstract: The present invention provides a voltage generation circuit which outputs high-precision output voltage in a wide temperature range. A semiconductor device has a voltage generation circuit. The voltage generation circuit has a reference voltage generation circuit which outputs reference voltage, and a plurality of correction circuits for generating a correction current and making it fed back to the reference voltage generation circuit. The correction circuits generate sub correction currents which monotonously increase from predetermined temperature which varies among the correction circuits toward a low-temperature side or a high-temperature side. The correction current is sum of a plurality of sub correction currents.

Abstract: The present invention provides a voltage generation circuit which outputs high-precision output voltage in a wide temperature range. A semiconductor device has a voltage generation circuit. The voltage generation circuit has a reference voltage generation circuit which outputs reference voltage, and a plurality of correction circuits for generating a correction current and making it fed back to the reference voltage generation circuit. The correction circuits generate sub correction currents which monotonously increase from predetermined temperature which varies among the correction circuits toward a low-temperature side or a high-temperature side. The correction current is sum of a plurality of sub correction currents.

Abstract: The present invention provides a voltage generation circuit which outputs high-precision output voltage in a wide temperature range. A semiconductor device has a voltage generation circuit. The voltage generation circuit has a reference voltage generation circuit which outputs reference voltage, and a plurality of correction circuits for generating a correction current and making it fed back to the reference voltage generation circuit. The correction circuits generate sub correction currents which monotonously increase from predetermined temperature which varies among the correction circuits toward a low-temperature side or a high-temperature side. The correction current is sum of a plurality of sub correction currents.

Abstract: An apparatus is provided that can stably produce a laminated body including a vapor-deposited polymer film having a predetermined composition and thickness on a film substrate. The apparatus includes: a film substrate supply means 46 that supplies a film substrate 15 on an outer peripheral surface of a rotary drum 35 in a vacuum chamber 24; a plurality of blowoff members 64 positioned around the rotary drum 35, each of the plurality of blowoff members including a vapor outlet 66 opening inside the vacuum chamber 24 to the outer peripheral surface of the rotary drum 35 and an inner space constituting a deposition chamber; and at least one monomer vapor supply means 84 arranged to supply plural kinds of monomer vapor into the deposition chamber and blowoff the plural kinds of monomer vapor from the vapor outlet of each of the plurality of blowoff members.

Abstract: A microcomputer includes a central processing unit (CPU) and a data transfer controller (DTC). The data transfer controller (DTC) reads out data transfer information including transfer mode information from a storage device (RAM) or the like. The data transfer controller (DTC) analyzes the transfer mode information to change at least one of a transfer source address, a transfer destination address, the number of transfer operations, and data transfer information that is used next.

Abstract: The present invention provides a voltage generation circuit which outputs high-precision output voltage in a wide temperature range. A semiconductor device has a voltage generation circuit. The voltage generation circuit has a reference voltage generation circuit which outputs reference voltage, and a plurality of correction circuits for generating a correction current and making it fed back to the reference voltage generation circuit. The correction circuits generate sub correction currents which monotonously increase from predetermined temperature which varies among the correction circuits toward a low-temperature side or a high-temperature side. The correction current is sum of a plurality of sub correction currents.

Abstract: The present invention provides a voltage generation circuit which outputs high-precision output voltage in a wide temperature range. A semiconductor device has a voltage generation circuit. The voltage generation circuit has a reference voltage generation circuit which outputs reference voltage, and a plurality of correction circuits for generating a correction current and making it fed back to the reference voltage generation circuit. The correction circuits generate sub correction currents which monotonously increase from predetermined temperature which varies among the correction circuits toward a low-temperature side or a high-temperature side. The correction current is sum of a plurality of sub correction currents.

Abstract: A memory cell of an SRAM has two drive MISFETs and two vertical MISFETs. The p channel vertical MISFETs are formed above the n channel drive MISFETs. The vertical MISFETs respectively mainly include a laminate formed of a lower semiconductor layer, intermediate semiconductor layer and upper semiconductor layer laminated in this sequence, a gate insulating film of silicon oxide formed on the surface of the side wall of the laminate, and a gate electrode formed so as to cover the side wall of the laminate. The vertical MISFETs are perfect depletion type MISFETs.

Abstract: The present invention provides a voltage generation circuit which outputs high-precision output voltage in a wide temperature range. A semiconductor device has a voltage generation circuit. The voltage generation circuit has a reference voltage generation circuit which outputs reference voltage, and a plurality of correction circuits for generating a correction current and making it fed back to the reference voltage generation circuit. The correction circuits generate sub correction currents which monotonously increase from predetermined temperature which varies among the correction circuits toward a low-temperature side or a high-temperature side. The correction current is sum of a plurality of sub correction currents.

Abstract: Provided are a technique for high-speed switching between clock signals different in frequency, and a clock-control-signal-generation circuit which serves to generate a control signal for clock switching in a clock selector operable to switch between clock signals including a first clock signal based on first and second clock-stop-permission signals and a clock-resume-permission signal. The clock-control-signal-generation circuit includes: a before-switching clock processing unit; and an after-switching clock processing unit. In each of the before-and after-switching clock processing units, the high-frequency clock processing subunit and the low-frequency clock processing subunit take partial charges of processing of clock signals involved in the switching respectively, whereby the processing is speeded up.

Abstract: The present invention relates to a novel compound characterized by having a one-dimensional tunnel structure and being represented by the chemical formula H2Ti12O25, a method for manufacturing the same, and a lithium secondary battery containing, as a constituent thereof, an electrode produced by using the novel titanium oxide as an active material, and expected to demonstrate superior charge/discharge cycle characteristics over a long period of time as well as high capacity.