Abstract: There are provided a transfer member provided with a cleaning function, which have excellent foreign matter removing performance and transfer performance, and which can remove foreign matters having a predetermined particle diameter with especially high efficiency. The transfer member provided with a cleaning function includes a transfer member and the cleaning layer provided on at least one surface of the transfer member. The cleaning layer has a microasperity shape having an arithmetic average roughness Ra of 0.05 ?m or less and a maximum height Rz of 1.0 ?m or less. Preferably, a substantial surface area of the cleaning layer per a flat surface of 1 mm2 is 150% or more of a substantial surface area of a silicon wafer mirror surface per a flat area of 1 mm2.

Abstract: The present invention provides a cleaning substrate of a substrate processing equipment, which comprises a cleaning layer comprising a heat resistant resin with a storage modulus (1 Hz) at 20° C. up to 150° C. being 5×107 Pa to 1×109 Pa on at least one face of the substrate; and a polyimide resin suitable as the heat resistant resin for the cleaning layer and usable under circumstances possibly involving the generation of serious disadvantages due to silicone contamination, such as for HDD application and some semiconductor applications.

Abstract: The present invention provides a cleaning substrate of a substrate processing equipment, which comprises a cleaning layer comprising a heat resistant resin with a storage modulus (1 Hz) at 20° C. up to 150° C. being 5×107 Pa to 1×109 Pa on at least one face of the substrate; and a polyimide resin suitable as the heat resistant resin for the cleaning layer and usable under circumstances possibly involving the generation of serious disadvantages due to silicone contamination, such as for HDD application and some semiconductor applications.

Abstract: The thermosetting die bonding film of the invention is a thermosetting die bonding film used to produce a semiconductor device, which contains, as main components, 5 to 15% by weight of a thermoplastic resin component and 45 to 55% by weight of a thermosetting resin component, and has a melt viscosity of 400 Pa·s or more and 2500 Pa·s or less at 100° C. before the film is thermally set.

Abstract: The present invention provides a cleaning substrate of a substrate processing equipment, which comprises a cleaning layer comprising a heat resistant resin with a storage modulus (1 Hz) at 20° C. up to 150° C. being 5×107 Pa to 1×109 Pa on at least one face of the substrate; and a polyimide resin suitable as the heat resistant resin for the cleaning layer and usable under circumstances possibly involving the generation of serious disadvantages due to silicone contamination, such as for HDD application and some semiconductor applications.

Abstract: A cleaning sheet for cleaning foreign matters away from the interior of the substrate processing equipment is provided. The cleaning sheet includes a cleaning layer having substantially no tackiness and having a tensile modulus of not lower than 0.98 N/mm2 as determined according to JIS K7127. Alternatively, the cleaning sheet includes a cleaning layer having a Vickers hardness of not lower than 10 MPa.

Abstract: A cleaning sheet for cleaning foreign matters away from the interior of the substrate processing equipment is provided. The cleaning sheet includes a cleaning layer having substantially no tackiness and having a tensile modulus of not lower than 0.98 N/mm2 as determined according to JIS K7127. Alternatively, the cleaning sheet includes a cleaning layer having a Vickers hardness of not lower than 10 MPa.

Abstract: A first analog differential signal V1p and a first analog differential signal V1n are applied to the respectively commonly-connected bases of two sets of differential pairs which are constructed of transistors Q1 to Q4. A commonly-connected collector of Q1 and Q4 is used as an output terminal Vop, whereas a commonly-connected collector of Q2 and Q3 is used as another output terminal Von. Collectors of Q11 and Q12 are connected to the respective commonly-connected emitters of these differential pairs. Parallel resonant circuits are connected to the respective emitters of Q11 and Q12, and the emitter-to-emitter path is connected by R15. Input circuits 101 and 102 are connected to the respective bases of Q11 and Q12. A second analog differential signal V2p and a second analog differential signal V2n are inputted to these input circuits 101 and 102. The transistors Q12 and Q14 of the input circuits 101 and 102 constitute current mirror circuits in connection with Q11 and Q13.

Abstract: A first analog differential signal V1p and a first analog differential signal V1n are applied to the respectively commonly-connected bases of two sets of differential pairs which are constructed of transistors Q1 to Q4. A commonly-connected collector of Q1 and Q4 is used as an output terminal V0p, whereas a commonly-connected collector of Q2 and Q3 is used as another output terminal V0n. Collectors of Q11 and Q12 are connected to the respective commonly-connected emitters of these differential pairs. Parallel resonant circuits are connected to the respective emitters of Q11 and Q12, and the emitter-to-emitter path is connected by R15. Input circuits 101 and 102 are connected to the respective bases of Q11 and Q12. A second analog differential signal V2p and a second analog differential signal V2n are inputted to these input circuits 101 and 102. The transistors Q12 and Q14 of the input circuits 101 and 102 constitute current mirror circuits in connection with Q11 and Q13.