Abstract: A sensor device has a sensor unit, a control unit; and multiple power supply paths from a power supply to the sensor unit and the control unit. The multiple power supply paths are configured to be switched in accordance with an operation status of the sensor unit. The sensor device further has a wireless communication device for transmitting a measurement result of the sensor unit. The multiple power supply paths are provided to supply power from the power supply to the wireless communication device. The multiple power supply paths are configured to be switched in accordance with an operation status of the wireless communication device.

Abstract: A method for forming a color filter array includes a step of exposing a photosensitive color filter film, a step of forming a color filter array from the color filter film by developing the color filter film using a developer, and a step of cleaning the color filter array while rotating the color filter array and moving a nozzle for spraying fluid containing liquid and gas above the color filter array in a direction intersecting with an axis of the rotation. The method reduces variation in thickness of a color filter that is generated in the cleaning step.

Abstract: A controller switches a measurement unit from a non-measurement state to a measurement state to start measurement processing of the measurement target physical amount when a trigger condition having a lowest variation level for a steady state is satisfied in plural trigger conditions set according to a trigger physical amount detected by a trigger detector, and the controller interrupts currently-performed measurement processing to start measurement processing corresponding to a trigger condition having a higher variation level when the trigger condition having the variation level for the steady state higher than that of the trigger condition corresponding to the currently-performed measurement processing is satisfied during performance of the measurement processing.

Abstract: A measurement device has a sensor that generates current by electromagnetic coupling to a power line, a measurement circuit that measures one of voltage and power, the voltage and the power being obtained by the current generated in the sensor according to voltage at the power line, a conductive member electrically connected to a signal ground line of the measurement circuit, and an insulating member that brings the conductive member close to an external conductor and to insulates the conductive member from the external conductor.

Abstract: A photoelectric conversion apparatus of the present invention includes a first semiconductor region functioning as a barrier against signal charges between a first and a second photoelectric conversion element, and a second semiconductor region that has a width narrower than that of the first semiconductor region and functions as a barrier against signal charges between a first and the third photoelectric conversion element. A region with a low barrier is provided at least a part between the first and the second photoelectric conversion element.

Abstract: In a method for manufacturing an energy ray detection device including a first semiconductor region disposed below a first area on a surface of a semiconductor substrate, a second semiconductor region disposed below a second area on the surface and connected to a contact portion, and a third semiconductor region disposed below a third area on the surface between the first area and the second area, the first semiconductor region and the third semiconductor region are formed on the semiconductor substrate by performing ion implantation through a buffer film that covers the first area and the third area, a portion of the buffer film that covers the third area having a thickness smaller than a portion of the buffer film that covers the first area.

Abstract: The present invention relates to a detecting device and method, and a program which can detect a power state easily at low cost. A current transformer measures current of a commercial power system from a commercial power supply through a connection point of the commercial power system and a power generation system from a solar power generation system that supplies power having the same frequency as the commercial power supply. A current transformer measures power at the power generation system side through the connection point. A decision value calculator calculates a decision value based on a value obtained through multiplication of a measured value of current through the current transformer and through the current transformer. A flow detector detects a power flow of the commercial power system based on the calculated value. The present invention can be applied to a power measuring system for use in homes, for example.

Abstract: A photoelectric conversion apparatus of the present invention includes: a plurality of photoelectric conversion elements arranged on a substrate; a transistor for transferring a signal charge; and a plurality of transistors for reading out the signal charge transferred. The plurality of photoelectric conversion elements include a first photoelectric conversion element and a second photoelectric conversion element adjacent to each other. The photoelectric conversion apparatus of the present invention includes: a first semiconductor region having a first conductivity type arranged between the first photoelectric conversion element and the second photoelectric conversion element; and a second semiconductor region having the first conductivity type that is arranged on a region where the plurality of transistors are arranged and that has a width larger than that of the first semiconductor region of the first conductivity type.

Abstract: A method for manufacturing a semiconductor apparatus includes the first step of forming a silicon oxide film including a main portion on a second portion and a sub portion between a first portion and a silicon nitride film, the second step of forming a first conductivity type impurity region under the silicon oxide film, and the third step of forming a semiconductor element including a second conductivity type impurity region having an opposite conductivity to the first conductivity type impurity region in the first portion. In the second step, angled ion implantation is performed into a region under the sub portion at an implantation angle using the silicon nitride film as a mask.

Abstract: A photoelectric conversion apparatus of the present invention includes a first semiconductor region functioning as a barrier against signal charges between a first and a second photoelectric conversion element, and a second semiconductor region that has a width narrower than that of the first semiconductor region and functions as a barrier against signal charges between a first and the third photoelectric conversion element. A region with a low barrier is provided at least a part between the first and the second photoelectric conversion element.

Abstract: A photoelectric conversion apparatus of the present invention includes: a plurality of photoelectric conversion elements arranged on a substrate; a transistor for transferring a signal charge; and a plurality of transistors for reading out the signal charge transferred. The plurality of photoelectric conversion elements include a first photoelectric conversion element and a second photoelectric conversion element adjacent to each other. The photoelectric conversion apparatus of the present invention includes: a first semiconductor region having a first conductivity type arranged between the first photoelectric conversion element and the second photoelectric conversion element; and a second semiconductor region having the first conductivity type that is arranged on a region where the plurality of transistors are arranged and that has a width larger than that of the first semiconductor region of the first conductivity type.

Abstract: A detection device for detecting a state of electric power has a first current transformer that measures a first current on a first power line side of a connecting point between a first power line derived from a commercial power supply and a second power line derived from a power generation device which supplies electric power equal in frequency to the commercial power supply, a second current transformer that measures a second current on a second power line side of the connecting point, a first calculation unit that calculates a decision value based on a product of a measured value of the first current and a measured value of the second current, and a detection unit that detects a power flow direction of electric power of the first power line based on the decision value.

Abstract: A photoelectric conversion apparatus of the present invention includes a first semiconductor region functioning as a barrier against signal charges between a first and a second photoelectric conversion element, and a second semiconductor region that has a width narrower than that of the first semiconductor region and functions as a barrier against signal charges between a first and the third photoelectric conversion element. A region with a low barrier is provided at least a part between the first and the second photoelectric conversion element.

Abstract: A method of manufacturing a semiconductor device that includes a semiconductor substrate is provided. The method includes: exposing a photoresist coated on the semiconductor substrate using a photomask including a plurality of regions having different light transmittances; developing the photoresist to form a resist pattern including a plurality of regions having different thicknesses that depend on an exposure amount of the photoresist; and implanting impurity ions into the semiconductor substrate through the plurality of regions of the resist pattern having different thicknesses to form a plurality of impurity regions whose depths from a surface of the semiconductor substrate to peak positions are different from each other. The depths to the peak positions depend on the thickness of the resist pattern through which the implanted impurity ions pass.

Abstract: A plane defining unit (241) defines a horizontal plane in the field of view, within whose bounds an own character exists. A block division unit (242) divides the defined plane into a plurality of blocks. An aiming position selecting unit (243) randomly selects a predetermined number of aiming positions, which are arbitrary positions in each of the blocks thus divided. An reaching determining unit (244) determines whether a bullet can reach each of the target positions thus selected, based on a positional relationship with an opponent character, who conducts shooting, and the like. An aiming position deciding unit (245) randomly decides one target position from among the target positions determined to be reachable. An image generating unit (250) generates a game image including the own character attacked by a bullet shoot at the decided target position.

Abstract: A photoelectric conversion apparatus of the present invention includes: a plurality of photoelectric conversion elements arranged on a substrate; a transistor for transferring a signal charge; and a plurality of transistors for reading out the signal charge transferred. The plurality of photoelectric conversion elements include a first photoelectric conversion element and a second photoelectric conversion element adjacent to each other. The photoelectric conversion apparatus of the present invention includes: a first semiconductor region having a first conductivity type arranged between the first photoelectric conversion element and the second photoelectric conversion element; and a second semiconductor region having the first conductivity type that is arranged on a region where the plurality of transistors are arranged and that has a width larger than that of the first semiconductor region of the first conductivity type.

Abstract: A sensor device has a sensor unit, a control unit; and multiple power supply paths from a power supply to the sensor unit and the control unit. The multiple power supply paths are configured to be switched in accordance with an operation status of the sensor unit. The sensor device further has a wireless communication device for transmitting a measurement result of the sensor unit. The multiple power supply paths are provided to supply power from the power supply to the wireless communication device. The multiple power supply paths are configured to be switched in accordance with an operation status of the wireless communication device.

Abstract: A structure of a spring has a supporting member, an actuating member that is rotatably supported to the supporting member by a first supporting axis at a portion near a center, and a plurality of interlocking members that are each provided on both sides of the first supporting axis, that are rotatably supported to the supporting member by a second supporting axis, and that are rotatably coupled to the actuating member. Each point of action of the interlocking members is defined at a portion that is closer to the first supporting axis than to the coupled portion of the second supporting axis and the actuating member.

Abstract: In a method for manufacturing an energy ray detection device including a first semiconductor region disposed below a first area on a surface of a semiconductor substrate, a second semiconductor region disposed below a second area on the surface and connected to a contact portion, and a third semiconductor region disposed below a third area on the surface between the first area and the second area, the first semiconductor region and the third semiconductor region are formed on the semiconductor substrate by performing ion implantation through a buffer film that covers the first area and the third area, a portion of the buffer film that covers the third area having a thickness smaller than a portion of the buffer film that covers the first area.

Abstract: A method for manufacturing a semiconductor apparatus includes the first step of forming a silicon oxide film including a main portion on a second portion and a sub portion between a first portion and a silicon nitride film, the second step of forming a first conductivity type impurity region under the silicon oxide film, and the third step of forming a semiconductor element including a second conductivity type impurity region having an opposite conductivity to the first conductivity type impurity region in the first portion. In the second step, angled ion implantation is performed into a region under the sub portion at an implantation angle using the silicon nitride film as a mask.