Abstract: A propylene resin composition is constructed so as to contain (A) a propylene-&agr;-olefin random copolymer with the content of a propylene unit of 99.1 to 99.9% by weight, and (B) a propylene-&agr;-olefin random copolymer with the content of a propylene unit of 70 to 90% by weight, in the specified proportion, and to have the specified loss tangent (tan &dgr;) and storage elastic modulus (E′), in the temperature dependence of dynamic viscoelasticity. Thereby, the propylene resin composition is provided, suitable as a raw material for shaped article having a well-balanced combination of transparency, stress-whitening resistance; impact resistance at low temperatures, and further heat resistance.

Abstract: In a system for preparing a wire harness production, a modified wiring pattern generator generates modified wire harness wiring pattern information related to at least one second pattern in which at least one of parts, electric circuits, and wirings of a first pattern including the parts, the electric circuits, and the wirings of a standard type vehicle is altered. A parts information storage stores parts specification information including specifications of the parts, the electric circuits and the wiring included in the second patterns. A simulator simulates whether each of the second patterns is practical while referring to the parts specification information. A sub wiring pattern modifier modifies at least one of first sub patterns constituting the first pattern to at least one of second sub patterns so as to constitute the second pattern judged as practical by the simulator.

Abstract: The present invention relates to a film using a polypropylene composition comprising crystalline polypropylene and a copolymer of propylene with &agr;-olefin in which a limiting viscosity of the said copolymer [&eegr;]RC is not more than 6.5 dl/g; the ratio of the limiting viscosity of the said polymer [&eegr;]RC to the limiting viscosity of the said crystalline polypropylene [&eegr;]PP is from 0.6 to 1.2; and the product i.e. ([&eegr;]RC/[&eegr;]PP)×(WPP/WRC), of the ratio of the limiting viscosity of the copolymer to the crystalline polypropylene with the ratio by weight of them is within a range of from 0.2 to 4.5 and also relates to a multi-layered film having at least one layer of the said film.

Abstract: The Present invention pertains to improved sugar coated products having a hard coating of a fruity taste which products are prepared by applying a hard coating composed of a sugar alcohol over the surface of an edible core material, wherein a layer of the hard coating contains an acid.

Abstract: Improved sugar coated products having a hard coating of a fruity taste which are prepare by applying a hard coating composed of a sugar alcohol over the surface of an edible core material, a layer of said hard coating containing a sour agent.

Abstract: A polypropylene composition for the production of various molded articles which are excellent in moldability, mold shrinkage factor on molding, rigidity, flexibility, impact resistance, in particular low-temperature impact resistance, transparency, gloss, stress-whitening resistance, and the balance thereof; various molded articles having the above properties; a propylene composition which is suitable for a base resin for the polypropylene composition; and a process for the production thereof. The propylene composition comprises a propylene homopolymer and a propylene-ethylene copolymer, the intrinsic viscosity of the copolymer ([&eegr;]RC) is in the range of 1.7 to 2.8 dl/g, the intrinsic viscosity ratio of the homopolymer to the copolymer ([&eegr;]RC/[&eegr;]pp) is in the range of 0.7 to 1.

Abstract: An unoriented polypropylene-based film or sheet possessing excellent impact resistance at low temperature, transparency, heat resistance at low temperature and excellent tear strength and/or stress whitening resistance. A molding material which comprises a polypropylene-based resin material comprising 40 to 80% by weight of crystalline polypropylene and 60 to 20% by weight of propylene-&agr;-olefin copolymer containing 20 to 80% by weight of propylene polymerization units, the propylene-&agr;-olefin copolymer dispersed as particles in the crystalline polypropylene, is unoriently molded to afford a film-shaped or sheet-shaped molding, wherein the particle diameter have an aspect ratio (L/D) of mean dispersed particle length (L) to mean dispersed particle diameter along the thickness of the molding (D) of 30 or more in a cross section of the molding along the MD direction, and the mean dispersed particle diameter of 0.3 &mgr;m or less.

Abstract: To provide a polypropylene-based resin exterior panel which has the same appearance qualities as a coated product though it is not coated and which is excellent in rigidity and impact resistance, a polypropylene-based resin exterior panel comprising a surface layer made from a highly transparent resin composition comprising a propylene-.alpha.-olefin random copolymer having a melting point lower than 155.degree. C. and a melt flow rate (MFR) of 0.5 to 30 g/10 min and a clarifying nucleating agent, an intermediate layer made from a colored resin composition comprising a propylene-.alpha.-olefin random copolymer having a melting point lower than 155.degree. C. and an MFR of 0.5 to 30 g/10 min and a coloring pigment, and a base layer made from a base composition comprising a propylene-.alpha.-olefin block copolymer having a melting point of 155.degree. C.

Abstract: Dielectric bodies are arranged in waveguide portions for passing microwave radiation and for holding a plasma generating chamber 25 at a vacuum. The dielectric bodies are arranged to intersect at least an electron cyclotron resonance area of the waveguide portions. A tip end portion of the dielectric bodies at a side of the plasma generating chamber are positioned toward at a side of the plasma generating chamber from an intermediate portion in an axial direction length of a first permanent magnet which is arranged by enclosing an outer periphery of the waveguide portions, and a tip end portion of the dielectric bodies at a side of the plasma generating chamber is substantially consistent with an inner face of the plasma generating chamber.

Abstract: A shower curtain spacer attaches to the rim of a bathtub or shower stall to hold a shower curtain away from the rim. The spacer includes a clamping mechanism having a first leg portion attached to a second leg portion at a right angle from one another. An adjustable sliding portion, in parallel relation to the second leg portion moves along the first leg portion to secure the device to the bathtub or shower stall rim. A screw locks the adjustable sliding portion in place. An elongated cylindrical bar sets within the tub area and is spaced from an inner surface of the tub when the shower curtain spacer is employed. The elongated bar is removably attached to the clamping mechanism by an intermediate block member including a body portion a pair of fingers for inserting within a pair of apertures in the clamping mechanism and a concave portion for receiving and retaining the elongated bar in a rigid and fixed position.

Abstract: A novel semiconductor device with a pair of main surfaces is disclosed, in which at least three semiconductor layers are formed adjacently to each other. The device comprises a main thyristor portion for supplying a main current, an auxiliary thyristor portion, a pilot thyristor portion and a breakover portion. The breakover portion, in turn, includes a semiconductor layer having a high impurities concentration formed on one of the main surfaces, and a plurality of semiconductor layers having a high impurities concentration of opposite conduction type formed adjacently to the semiconductor layer and in spaced relationship from each other.

Abstract: A gate turn-off thyristor having a p-emitter layer in the anode side, an n-base layer, a p-base layer and an n-emitter layer in the cathode side. The n-base layer is composed of a first layer portion adjacent to the p-emitter layer, a second layer portion adjacent to the p-base layer and having a lower impurity concentration than the first layer portion, and is constituted by a structure which alters a travelling path of positive holes injected from the p-emitter layer.

Abstract: A plasma treatment apparatus for forming a thin film on a substrate in a vacuum vessel includes a magnetic field generator which can be positioned inside or outside the vacuum vessel, and a microwave source. The magnetic field strength is controllable such that an electron cyclotron resonance (ECR) area is defined near the substrate. The magnetic field generator can be arranged so that plasma and reactive gas introduction ports are on the microwave introduction side of the ECR area and the substrate is on the opposite side of the ECR area. Alternatively, a gas introduction port can be positioned such that reactive gas is introduced into the ECR area or onto the substrate.

Abstract: TFTs with an inverted stagger structure are fabricated according to the invention as follows; a glass substrate after depositing amorphous silicon (a-Si) thereupon is transferred to a laser annealing chamber which is kept in non-oxidation ambient and provided with a sample holder and a substrate heating mechanism. The substrate is fixed on the sample holder, then subjected to laser annealing while being heated from the glass substrate side, thereby growing polycrystalline silicon having substantially improved crystallinity, on which a-Si is further deposited. According to this process of the invention, it is capable of forming TFTs having a higher mobility and a smaller leakage current in the periphery of the substrate, with addition of almost no changes to the process and device structures of conventional TFTs which constitute pixels, and even more the peripheral drive circuitry is capable of being integrated in the display substrate.

Abstract: A display device such as a liquid crystal display device is provided which comprises a single substrate, a plurality of thin film semiconductor elements provided on the substrate, a plurality of display elements whose pixel display is controlled by the semiconductor elements, and electrodes for driving the display elements. The substrate includes a display zone having the thin film semiconductor elements arranged in the display elements as well as a non-display zone. The non-display zone has a display scan drive circuit area and a display signal drive circuit area. The thin film semiconductor elements are formed in the both zones. A distance between the display signal drive circuit area and the semiconductor elements of the display zone on the substrate is physically arranged so as be larger than a distance between the display scan drive circuit area and the semiconductor elements of the display zone.

Abstract: A dielectric isolated substrate wherein a connecting polycrystalline silicon layer has smooth and flat surface on which a single crystal support is bonded and has a densified crystal structure, or is obtained by further heat treatment at 800.degree. C. or higher after deposition, or has no orientation as to growth direction of polycrystalline silicon, or a buffering layer is formed between a polycrystalline silicon layer and a single crystal support, is excellent in bonding between the single crystal support and the polycrystalline silicon layer by preventing voids at the bonded surface, while enhancing reliability.

Abstract: A plasma operation apparatus utilizes plasma generated by a microwave cooperative with a magnetic field as to perform a surface operation on a specimen such as semiconductor substrates, such as, for example, thin film deposition, etching, sputtering and plasma oxidation. The apparatus particularly takes advantage of electron cyclotron resonance and is suitable for performing highly efficient and high-quality plasma operations.

Abstract: A method of manufacturing a semiconductor device of the type wherein aluminum layers are selectively deposited on a major surface of a silicon semiconductor substrate and thereafter aluminum is selectively diffused into the silicon semiconductor substrate by means of heat treatment. SiO.sub.2 mask is selectively formed on at least one major surface of the silicon semiconductor substrate, then aluminum is deposited onto the major surface being close to but separated from the SiO.sub.2 mask, subsequently the silicon semiconductor substrate is subjected to a heat treatment to selectively diffuse the aluminum into the silicon semiconductor substrate.The SiO.sub.2 mask which is formed before the heat treatment prevents impurity atoms from autodoping through the SiO.sub.2 mask. No cracking occurs in the SiO.sub.2 mask because the aluminum diffusion source is apart from the periphery of the SiO.sub.2 mask.

Abstract: A method of diffusing selectively aluminium into a single crystal silicon semiconductor substrate for fabricating a semiconductor device comprises the steps of forming a diffusion source layer of aluminium having a predetermined thickness on at least one of the major surfaces of the substrate in a predetermined pattern, forming an oxide film of a predetermined thickness through oxidation over the surface of the diffusion source layer and the exposed surface of the substrate, and heating the substrate inclusive of the exposed surface thereof and the diffusion source layer thereby to diffuse aluminium into the substrate. The thickness of the oxide film is so selected as to suppress vaporization of the aluminium and at the same time to be used as a diffusion mask without giving rise to crystallization into a cristobalite structure.