Abstract: A display unit includes a substrate including a pixel region including a plurality of pixels and a peripheral region. The display unit includes a plurality of first electrodes, wherein each of the plurality of first electrodes is in a corresponding pixel of the plurality of pixels. The display unit includes a second electrode opposed to the first electrode, wherein the second electrode is common for all of the plurality of pixels. The display unit includes an organic layer between the second electrode and the plurality of first electrodes, wherein the organic layer includes a light-emitting layer. The display unit includes a wiring layer between the substrate and the plurality of first electrodes. The display unit includes an auxiliary electrically-conductive layer including an organic electrically-conductive material, wherein the auxiliary electrically-conductive layer is electrically coupled to the second electrode. The auxiliary electrically-conductive layer is in a recess in the wiring layer.

Abstract: A display unit includes a substrate including a pixel region including a plurality of pixels and a peripheral region. The display unit includes a plurality of first electrodes, wherein each of the plurality of first electrodes is in a corresponding pixel of the plurality of pixels. The display unit includes a second electrode opposed to the first electrode, wherein the second electrode is common for all of the plurality of pixels. The display unit includes an organic layer between the second electrode and the plurality of first electrodes, wherein the organic layer includes a light-emitting layer. The display unit includes a wiring layer between the substrate and the plurality of first electrodes. The display unit includes an auxiliary electrically-conductive layer including an organic electrically-conductive material, wherein the auxiliary electrically-conductive layer is electrically coupled to the second electrode. The auxiliary electrically-conductive layer is in a recess in the wiring layer.

Abstract: A semiconductor device includes a semiconductor film, an interlayer insulating film, a source-drain electrode, and a semiconductor auxiliary film. The semiconductor film includes an oxide semiconductor material and has a channel region and a low-resistance region. The low-resistance region has an electric resistance lower than an electric resistance of the channel region. The interlayer insulating film covers the semiconductor film and has a through-hole opposed to the low-resistance region. The source-drain electrode includes a source electrode and a drain electrode and is electrically coupled to the semiconductor film through the through-hole. The semiconductor auxiliary film is in contact with the low-resistance region of the semiconductor film, reduces an electric resistance of the semiconductor film, and has a first opening at least on a part of a portion opposed to the through-hole.

Abstract: A display unit includes a substrate, a first electrode, a second electrode, an organic layer, and an auxiliary electrically-conductive layer. The substrate includes a pixel region including a plurality of pixels and a peripheral region outside the pixel region. The first electrode is provided for each of the plurality of pixels in the pixel region on the substrate. The second electrode is opposed to the first electrode, and is provided common for the plurality of pixels. The organic layer is provided between the second electrode and the first electrode, and includes a light-emitting layer. The auxiliary electrically-conductive layer includes an organic electrically-conductive material, and the auxiliary electrically-conductive layer is disposed in the pixel region on the substrate and is electrically coupled to the second electrode.

Abstract: A display unit includes multiple pixels, a first electrode, a partition wall, a light emission layer, and a second electrode. The multiple pixels each have a light emission region and a non-light emission region along a first direction. The first electrode is provided in the light emission region in each of the multiple pixels. The partition wall is provided between each two of the pixels that are adjacent to each other in a second direction. The second direction intersects the first direction. The light emission layer covers the first electrode and is provided in the light emission region and the non-light emission region in a continuous manner. The second electrode faces the first electrode across the light emission layer.

Abstract: A semiconductor device includes a semiconductor film, a semiconductor auxiliary film, a wiring line, a first metal film, and an interlayer insulating film. The semiconductor film includes a channel region and a low-resistance region. The semiconductor film includes indium and oxygen. The semiconductor auxiliary film is in contact with the low-resistance region of the semiconductor film and reduces the electric resistance of the semiconductor film. The wiring line is electrically coupled to the low-resistance region of the semiconductor film. The first metal film covers the wiring line and has a higher standard electrode potential than the indium. The interlayer insulating film covers the semiconductor film with the first metal film interposed therebetween. The interlayer insulating film has a first hole and a second hole. The first hole is provided at a position opposed to the low-resistance region of the semiconductor film. The second hole reaches the first metal film.

Abstract: A semiconductor device includes a substrate, a first semiconductor auxiliary film, a semiconductor film, a gate insulating film, and a gate electrode. The first semiconductor auxiliary film is provided in a selective region on the substrate. The semiconductor film includes an oxide semiconductor material, and has a low-resistive region in contact with the first semiconductor auxiliary film and a channel region provided in a portion different from the low-resistive region. The gate insulating film covers the semiconductor film from the channel region to at least part of the low-resistive region. The gate electrode is opposed to the channel region of the semiconductor film via the gate insulating film.

Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.

Abstract: A thin-film transistor substrate includes a pixel circuit, an interlayer insulating film, electrodes, and a hard mask metal. The pixel circuit includes a thin film transistor. The interlayer insulating film has contact holes and covers the pixel circuit. The electrodes are exposed above a surface of the interlayer insulating film, and electrically coupled to the pixel circuit via the contact holes. The hard mask metal has openings at portions facing the contact holes and is provided on the surface of the interlayer insulating film.

Abstract: A semiconductor device includes a substrate, a transistor, a storage capacitor, a first insulating layer, and a second insulating layer. The transistor includes a semiconductor film, a gate insulating film, a first gate electrode, and a second gate electrode. The semiconductor film, the gate insulating film, and the first gate electrode are provided in this order from the substrate. The second gate electrode faces the first gate electrode across the semiconductor film. The storage capacitor includes a lower electrode and an upper electrode that are provided in this order from the substrate. The upper electrode faces the lower electrode and includes the same material as the semiconductor film. The first insulating layer is provided between the second gate electrode and the semiconductor film. The second insulating layer is provided between the lower electrode and the upper electrode and has a smaller thickness than the first insulating layer.

Abstract: A display unit includes a display panel, a photochromic layer, and an ultraviolet absorption layer. The photochromic layer is configured to be colored by ultraviolet light and be decolored or color-faded by visible light. The display panel includes an image display surface with a plurality of pixels. The pixels are provided below the image display surface and each include an organic light-emitting layer.

Abstract: A semiconductor device includes a substrate, a first semiconductor auxiliary film, a semiconductor film, a gate insulating film, and a gate electrode. The first semiconductor auxiliary film is provided in a selective region on the substrate. The semiconductor film includes an oxide semiconductor material, and has a low-resistive region in contact with the first semiconductor auxiliary film and a channel region provided in a portion different from the low-resistive region. The gate insulating film covers the semiconductor film from the channel region to at least part of the low-resistive region. The gate electrode is opposed to the channel region of the semiconductor film via the gate insulating film.

Abstract: A semiconductor device includes a semiconductor film, a semiconductor auxiliary film, a wiring line, a first metal film, and an interlayer insulating film. The semiconductor film includes a channel region and a low-resistance region. The semiconductor film includes indium and oxygen. The semiconductor auxiliary film is in contact with the low-resistance region of the semiconductor film and reduces the electric resistance of the semiconductor film. The wiring line is electrically coupled to the low-resistance region of the semiconductor film. The first metal film covers the wiring line and has a higher standard electrode potential than the indium. The interlayer insulating film covers the semiconductor film with the first metal film interposed therebetween. The interlayer insulating film has a first hole and a second hole. The first hole is provided at a position opposed to the low-resistance region of the semiconductor film. The second hole reaches the first metal film.

Abstract: A semiconductor device includes a semiconductor film, an interlayer insulating film, a source-drain electrode, and a semiconductor auxiliary film. The semiconductor film includes an oxide semiconductor material and has a channel region and a low-resistance region. The low-resistance region has an electric resistance lower than an electric resistance of the channel region. The interlayer insulating film covers the semiconductor film and has a through-hole opposed to the low-resistance region. The source-drain electrode includes a source electrode and a drain electrode and is electrically coupled to the semiconductor film through the through-hole. The semiconductor auxiliary film is in contact with the low-resistance region of the semiconductor film, reduces an electric resistance of the semiconductor film, and has a first opening at least on a part of a portion opposed to the through-hole.

Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.

Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.

Abstract: A display apparatus includes a display panel and a driving circuit. The display panel includes signal lines extending in a column direction, scanning lines extending in a row direction, and lead-out lines extending in the column direction. Each of the lead-out lines intersects with corresponding one of the scanning lines at an intersection and is electrically coupled to the corresponding one of the scanning lines at a node. The node is disposed at the intersection or in a region surrounding the intersection. The driving circuit supplies corresponding one of the signal lines with a signal pulse corresponding to an image signal, and supplies corresponding one of the lead-out lines with a selection pulse having a peak value based on a distance from one end of the corresponding one of the lead-out lines to the corresponding node, after increasing the peak value with an increase in the distance.

Abstract: A thin-film transistor substrate includes a pixel circuit, an interlayer insulating film, electrodes, and a hard mask metal. The pixel circuit includes a thin film transistor. The interlayer insulating film has contact holes and covers the pixel circuit. The electrodes are exposed above a surface of the interlayer insulating film, and electrically coupled to the pixel circuit via the contact holes. The hard mask metal has openings at portions facing the contact holes and is provided on the surface of the interlayer insulating film.

Abstract: A display unit includes a substrate, a first electrode, a second electrode, an organic layer, and an auxiliary electrically-conductive layer. The substrate includes a pixel region including a plurality of pixels and a peripheral region outside the pixel region. The first electrode is provided for each of the plurality of pixels in the pixel region on the substrate. The second electrode is opposed to the first electrode, and is provided common for the plurality of pixels. The organic layer is provided between the second electrode and the first electrode, and includes a light-emitting layer. The auxiliary electrically-conductive layer includes an organic electrically-conductive material, and the auxiliary electrically-conductive layer is disposed in the pixel region on the substrate and is electrically coupled to the second electrode.

Abstract: A display unit includes a display panel, a photochromic layer, and an ultraviolet absorption layer. The photochromic layer is configured to be colored by ultraviolet light and be decolored or color-faded by visible light. The display panel includes an image display surface with a plurality of pixels. The pixels are provided below the image display surface and each include an organic light-emitting layer.