Abstract: Provided is an ultraviolet light receiving device having photosensitivity effective to target wavelengths in the ultraviolet region. A Schottky junction ultraviolet light receiving device has the photosensitivity peak wavelength in an ultraviolet region of 230 nm or more and 320 nm or less, and exhibits a rejection ratio of 105 or more, the rejection ratio being the ratio of the responsivity Rp to the peak photosensitivity wavelength to the average of the responsivity Rv to a visible region of 400 nm or more and 680 nm or less (Rp/Rv).

Abstract: A non-transitory computer-readable recording medium storing an optimization program that cause a computer to execute a process. The process includes reading information including first cost for first element, a first local field for the first element, second cost for second element, and a second local field for the second element from a first memory, writing the read information to a second memory that has a smaller capacity than that of the first memory; iterating processing of calculating a second change amount of the evaluation function when an exchange of the assignment locations is made between two elements belonging to the first or second group, executing the exchange when the second change amount is smaller than a noise value obtained, and updating the first local field and the second local field, and the second cost, and switching a group pair of the first and second groups.

Abstract: An information processing device includes: a memory; and a processor coupled to the memory and configured to calculate, for a plurality of bits corresponding to a plurality of spins included in an Ising model obtained by converting a problem to be calculated, in a case where the plurality of bits is divided into a plurality of groups, on the basis of a first local field value for a first bit having a value of 1 and a second local field value for a second bit having a value of 0 among a plurality of bits included in each of the plurality of groups, a first energy change of the Ising model due to a change of the value of the first bit from 1 to 0 and a change of the value of the second bit from 0 to 1.

Abstract: A fluid handling device includes a board that includes a board body, and a lid that faces the first surface of the board and is disposed so as to form a space between the board and the lid. The lid includes a lid body including a second surface, and a first through hole which allows for injection of a fluid into the space and includes a first opening that opens onto the second surface and a second opening that opens onto a surface other than the second surface. The lid further includes a spacer which is integrally molded with the lid body; alternatively, the board includes a spacer which is integrally molded with the board body.

Abstract: The rack-type power supply device includes a plurality of battery modules each of which accommodates a plurality of secondary battery cells, a rack main body that vertically accommodates battery modules in a horizontal posture like a plurality of steps with gaps between the battery modules, and a plurality of cooling fans that are arranged on a front surface side of the rack main body and blow cooling air into the gaps between battery modules. The rack main body also includes a back-side duct in which cooling air having passed through the gaps flows upward on a back surface side of the battery modules. In addition, rack main body includes an air outlet for discharging cooling air having passed through the back-side duct on a top surface side. The cooling fan is disposed to be shifted from the gap between the battery modules in front view of the rack main body.

Abstract: A recording medium stores an optimization program for causing a computer to execute a process including: acquiring information on an evaluation function obtained by converting a problem; determining values of temperature parameters used for solution processing of an optimal solution by a replica exchange method; setting each of values of the temperature parameters to any one of replicas; and executing the solution processing by performing, for each of the replicas, update processing of repeating update of any value of state variables included in the evaluation function in accordance with a first transition probability, and repeating exchange processing of exchanging, between the replicas, any values of the temperature parameters set for each of the replicas or values of the state variables in each of the replicas, in accordance with an exchange probability that satisfies an invariant distribution condition of probability distribution obtained by the first transition probability.

Abstract: In a sleeve member for a filler pipe, the filler pipe passes through the sleeve member internally and is positioned with an upper end thereof on a fuel supply portion formed on an outside panel forming an outside of an automobile through a through hole formed in an inside panel forming a wheel house of the automobile. The sleeve member includes an attachment portion relative to the outside panel; a main seal portion elastically deformed and pressed against an inner face facing a space formed between the inside panel and the outside panel in such a way so as to surround the through hole by an insertion into the through hole; and an engagement portion which becomes engageable with a hole edge portion of the through hole positioned on an outer-face side of the inside panel by the insertion into the through hole.

Abstract: Provided is a reflective electrode for a deep ultraviolet light-emitting element that enables a balance of both high light emission output and excellent reliability. A method of producing the reflective electrode for a deep ultraviolet light-emitting element includes: a first step of forming Ni with a thickness of 3 nm to 20 nm as a first metal layer on a p-type contact layer having a superlattice structure; a second step of forming Rh with a thickness of not less than 20 nm and not more than 2 ?m as a reflective metal on the first metal layer; and a third step of performing heat treatment of the first metal layer and the second metal layer at not lower than 300° C. and not higher than 600° C.

Abstract: A deep ultraviolet LED with a design wavelength ?, including a reflecting electrode layer (Au), a metal layer (Ni), a p-GaN contact layer, a p-block layer made of a p-AlGaN layer, an i-guide layer made of an AlN layer, a multi-quantum well layer, an n-AlGaN contact layer, a u-AlGaN layer, an AlN template, and a sapphire substrate that are arranged in this order from a side opposite to the sapphire substrate, in which the thickness of the p-block layer is 52 to 56 nm, a two-dimensional reflecting photonic crystal periodic structure having a plurality of voids is provided in a region from the interface between the metal layer and the p-GaN contact layer to a position not beyond the interface between the p-GaN contact layer and the p-block layer in the thickness direction of the p-GaN contact layer, the distance from an end face of each of the voids in the direction of the sapphire substrate to the interface between the multi-quantum well layer and the i-guide layer satisfies ?/2n1Deff (where ? is the design wav

Abstract: Disclosed is a deep ultraviolet light-emitting device which includes on a substrate 10 in order: an n-type semiconductor layer 30, a light-emitting layer 40, a p-type electron block layer 60, and a p-type contact layer 70, wherein the p-type contact layer 70 comprises a superlattice structure having an alternating stack of: a first layer 71 made of AlxGa1-xN having an Al composition ratio x higher than an Al composition ratio w0 of a layer configured to emit deep ultraviolet light in the light-emitting layer; and a second layer 72 made of AlyGa1-yN having an Al composition ratio y lower than the Al composition ratio x, and the Al composition ratio w0, the Al composition ratio x, the Al composition ratio y, and a thickness average Al composition ratio z of the p-type contact layer satisfy the formula [1] 0.030<z?w0<0.20 and the formula [2] 0.050?x?y?0.47.

Abstract: An optimization device includes: search circuits, each configured to: hold values of state variables included in an evaluation function representing an energy value; calculate a change value of the energy value for each of state transitions which occurs in response to a change in one of the state variables; and determine stochastically whether to accept one of the state transitions according to a relative relationship between the change value of the energy value and thermal excitation energy, based on a set temperature value, the change value, and a random number value; and a controller configured to: acquire statistical information regarding a transition of a temperature value in each search circuit; determine a temperature value to be set in each search circuit based on the statistical information; set the temperature value for each search circuit; and exchange the temperature value or the values of the state variables between the search circuits.

Abstract: The group III nitride semiconductor light emitting element according to this disclosure has, on a substrate, an n-type semiconductor layer, a light emitting layer, a p-type AlGaN electron blocking layer, a p-type contact layer and a p-side reflection electrode, in this order, wherein, a center emission wavelength of light emitted from the light emitting layer is 250 nm or greater and 330 nm or smaller, the Al composition ratio of the p-type AlGaN electron blocking layer is 0.40 or greater and 0.80 or smaller, the film thickness of the p-type contact layer is 10 nm or greater and 50 nm or smaller, and the p-type contact layer has a p-type AlGaN contact layer having Al composition ratio of 0.03 or greater and 0.25 or smaller.

Abstract: A latch device includes a case, a rod juts out from inside the case so as to adopt an advanced position, a rod biasing member biases the rod in a jutting out direction pushing the rod out from inside the case, a lock mechanism that includes a slide cam that moves together with the rod in the jutting out direction and a rotation cam that is relatively rotatable with respect to the slide cam about an axis of the rod, with the lock mechanism locking the rod in a retracted position in the case due to the rotation cam engaging with the slide cam and rotating due to the rod being pressed in, a guide mechanism for rotating the rod about the axial direction thereof when the rod is advancing or retracting, and an engagement portion that engages with an engaged portion when the rod has been locked.

Abstract: An information processing system searching for a solution to a problem represented by an energy function including a plurality of state variables, the information processing system includes a first node and second node. The first node searches for a first partial solution represented by a first state variable group, among the plurality of state variables, corresponding to a first subproblem assigned to the first node, the first subproblem being generated by dividing the problem. The first node holds a plurality of first solutions including a first solution corresponding to the problem, the first solution reflecting the first partial solution, and transmits one or more first solution among the plurality of first solutions. The second node updates, based on one or more first solution received from the first node, at least part of a plurality of second solution held in the second node.

Abstract: Provided is a III-nitride semiconductor light-emitting device having excellent light output power as compared with conventional devices and a method of producing the same. The III-nitride semiconductor light-emitting device has an emission wavelength of 200 nm to 350 nm and includes an n-type semiconductor layer; a light emitting layer in which N barrier layers 40b and N well layers 40w (where N is an integer) are alternately stacked in this order; an AlN guide layer; an electron blocking layer; and a p-type semiconductor layer in this order. The electron block layer is made of p-type AlzGa1-zN (0.50?z?0.80), and the barrier layers are made of n-type AlbGa1-bN (z+0.01?b?0.95).

Abstract: A power supply apparatus includes a container including a first conductive material, a plurality of battery racks including a second conductive material, a plurality of electricity storage modules mounted on the battery racks and having grounded portions connected to the battery racks, and a grounding means configured to connect the battery racks to a ground outside the container.

Abstract: Provided are a III-nitride semiconductor light-emitting device that can reduce change in the light output power with time and has more excellent light output power, and a method of producing the same. A III-nitride semiconductor light-emitting device 100 has an emission wavelength of 200 nm to 350 nm, and includes an n-type layer 30, a light emitting layer 40, an electron blocking layer 60, and a p-type contact layer 70 in this order. The electron blocking layer 60 has a co-doped region layer 60c, the p-type contact layer 60 is made of p-type AlxGa1-xN (0?x?0.1), and the p-type contact layer 60 has a thickness of 300 nm or more.

Abstract: A relay control device includes a coil, a movable iron armature that is switched from an open state to a closed state when the coil is excited, a switching current output circuit that applies first current for switching the movable iron armature from the open state to the closed state to the coil, and a holding current output circuit that applies second current for holding the movable iron armature in the closed state to the coil. The switching current output circuit applies the first current to the coil when a first time has elapsed from when the second current is started to be applied to the coil, and the value of the second current is lower than the value of the first current.

Abstract: A gateway apparatus (30) according to the present disclosure is arranged between a node apparatus (20) that performs communication in accordance with a GTP and an S/P-GW (40) or an S/P-GW (50). The gateway apparatus (30) includes a communication unit (31) configured to terminate a GTP message transmitted from the node apparatus (20); a determination unit (32) configured to determine a terminal type of a mobile station associated with the GTP message; and a conversion unit (33) configured to change a transmission source address set in the GTP message transmitted from the node apparatus (20) from an identifier of the node apparatus (20) to a first identifier of the gateway apparatus (30), in which the communication unit (31) transmits, to the S/P-GW (40) or the S/P-GW (50) determined in accordance with the terminal type, the GTP message in which the transmission source address has been converted.

Abstract: The present disclosure aims to provide a gateway apparatus capable of appropriately allocating a packet in a network constructed based on the 3GPP standards. A gateway apparatus (30) according to the present disclosure is a communication system including: a DB (100) configured to manage an identifier of a mobile station and an identifier of a core network that transmits data related to the mobile station in association with each other; and a gateway apparatus (30) configured to terminate a GTP message transmitted from a node apparatus (20), extract the identifier of the core network associated with the identifier of the mobile station included in the GTP message from among a plurality of core networks from the DB (100), and transmit the GTP message that has been terminated to an S/P-GW (40) or an S/P-GW (50) arranged in the core network.