Abstract: Disclosed herein is a photoelectric conversion element including: a first semiconductor layer of a first conductivity type provided above a substrate; a second semiconductor layer of a second conductivity type provided in a higher layer than the first semiconductor layer; a third semiconductor layer of a third conductivity type provided between the first and second semiconductor layers and lower in electrical conductivity than the first and second semiconductor layers; and a light-shielding layer provided between the substrate and first semiconductor layer.

Abstract: An image pickup device includes: an image pickup section including a plurality of pixels, the pixels each including a photoelectric conversion element; a drive section performing a readout operation and a reset operation of a signal electric charge, the signal electric charge being accumulated in the pixel; and a correction section correcting a timing of performing the reset operation to allow an afterimage in an image output from the image pickup section to be reduced.

Abstract: An image processing device carries out processing in a processing unit of 3-blocks. Data of 192(=64×3)-pixels is required in the processing of 3-blocks. This is an amount of data corresponding to 16-cells. When 3-blocks and 16-cells are arranged along an scanning direction of an image, both ends of them in the scanning direction are aligned.

Abstract: A semiconductor device including a substrate, at least one gate electrode, at least two silicon oxide layers comprising a first silicon oxide layer and a second silicon oxide layer, wherein the first silicon oxide layer is nearer to the substrate than the second silicon oxide layer, and wherein a thickness of the first silicon oxide layer is greater than or equal to a thickness of the second silicon oxide layer, and a semiconductor layer disposed between at least a portion of the first silicon oxide layer and at least a portion of the second silicon oxide layer. Also, an image pick-up device and a radiation imaging device including the semiconductor device.

Abstract: A position coordinate difference calculation section 5 calculates a position coordinate difference between a position coordinate of an output digital signal and a position coordinate of an input digital signal close to it. AN FIR coefficient memory 9 stores FIR coefficients of an FIR-LPF having such a characteristic as to cut off frequency components equal to or higher than ½ of an output sampling rate. When the position coordinate difference is input, the FIR coefficient memory outputs FIR coefficients corresponding to position coordinate differences between position coordinates of a certain number of input digital signals existing in the vicinity of the position coordinate of the output digital signal and the position coordinate of the output digital signal. AN FIR computation unit 3 performs FIR-LPF interpolation computation by using a certain number of the input digital signals and the FIR coefficients and obtains the output digital signal.

Abstract: An image pickup unit includes: an image pickup section including a plurality of pixels, the plurality of pixels each including a photoelectric converter device and a field-effect transistor; and a driving section reading out a signal charge with use of the transistor, the signal charge being accumulated in each of the plurality of pixels. The driving section turns off the transistor by applying an off-voltage to the transistor, the off-voltage being set in consideration of an off-leakage current between a source and a drain of the transistor.

Abstract: A nitride semiconductor device of the present invention has a source-electrode-side insulator protection film layer disposed between a source electrode and a drain electrode on a second nitride semiconductor layer and formed at least partially covering the source electrode, a drain-electrode-side insulator protection film layer disposed separately from the source-electrode-side insulator protection film layer and formed at least partially covering the drain electrode, and a gate layer formed in contact with the second nitride semiconductor layer between the source-electrode-side insulator protection film layer and the drain-electrode-side insulator protection film layer and made of a p-type metal oxide semiconductor, and the gate layer has regions opposite to the second nitride semiconductor layer across each of the source-electrode-side insulator protection film layer and the drain-electrode-side insulator protection film layer and a region in contact with the second nitride semiconductor layer.

Abstract: A position coordinate difference computing unit (5a to 5c) calculates position coordinate differences between position coordinates of the output digital signals and position coordinates of the input digital signals adjacent to the position coordinates. An FIR coefficient memory (13a to 13c) stores FIR coefficients of an FIR-LPF and outputs FIR coefficients corresponding to position coordinate differences between a fixed number of the output digital signals adjacent to the position coordinates of the output digital signals and the output digital signals. A control unit (11) supplies a group of the FIR coefficients and a group of the input digital signals corresponding to the respective position coordinate differences to the parallel FIR calculator (4) in predetermined order when the position coordinate differences corresponding to two or more different output digital signals are concurrently computed.

Abstract: Disclosed herein is a transistor including: a semiconductor layer; a first gate insulation film and a first interlayer insulation film which are provided on a specific surface side of the semiconductor layer; a first gate electrode provided at a location between the first gate insulation film and the first interlayer insulation film; an insulation film provided on the other surface side of the semiconductor layer; source and drain electrodes provided by being electrically connected to the semiconductor layer; and a shield electrode layer provided in such a way that at least portions of the shield electrode layer face edges of the first gate electrode, wherein at least one of the first gate insulation film, the first interlayer insulation film and the insulation film include a silicon-oxide film.

Abstract: A position coordinate difference calculation section 5 calculates a position coordinate difference between a position coordinate of an output digital signal and a position coordinate of an input digital signal close to it. AN FIR coefficient memory 9 stores FIR coefficients of an FIR-LPF having such a characteristic as to cut off frequency components equal to or higher than ½ of an output sampling rate. When the position coordinate difference is input, the FIR coefficient memory outputs FIR coefficients corresponding to position coordinate differences between position coordinates of a certain number of input digital signals existing in the vicinity of the position coordinate of the output digital signal and the position coordinate of the output digital signal. AN FIR computation unit 3 performs FIR-LPF interpolation computation by using a certain number of the input digital signals and the FIR coefficients and obtains the output digital signal.

Abstract: A semiconductor device includes a semiconductor switch, a first rectifier circuit, and a second rectifier circuit. The semiconductor switch, the first rectifier circuit, and the second rectifier circuit are integrated on a common board. On the board, a first output terminal of the first rectifier circuit is coupled to a first gate terminal of the semiconductor switch, and a first output reference terminal of the first rectifier circuit is coupled to a first source terminal of the semiconductor switch. On the board, a second output terminal of the second rectifier circuit is coupled to a second gate terminal of the semiconductor switch, and a second output reference terminal of the second rectifier circuit is coupled to a second source terminal of the semiconductor switch.

Abstract: A semiconductor device including n, where notation n denotes a positive integer at least equal to three, conductive layers created as stacked layers on a substrate and connected to each other through a contact pattern, a manufacturing method thereof and a display apparatus thereof are provided.

Abstract: A device for image sensing includes a photoelectric conversion unit and at least one transistor. The photoelectric conversion unit is configured to convert incident electromagnetic radiation into an electric signal. The at least one transistor includes a first gate electrode and a second gate electrode above the first gate electrode. The first gate electrode and the second gate electrode do not overlap each other within a non-overlapping region.

Abstract: An image pickup unit includes: an image pickup section having a plurality of pixels each including a photoelectric conversion device and a field effect transistor; and a driving section, by using the transistor, that executes read driving and reset driving on a signal charge stored in the pixel. The driving section intermittently executes the reset driving a plurality of times in a one-frame term, and executes on-operation of the transistor by applying, to the transistor over at least one resetting term in the one-frame term or over a partial term in the at least one resetting term, a second voltage that is lower than a first voltage applied in a resetting term in the one-frame term other than the at least one resetting term.

Abstract: An image pickup unit includes: an image pickup section including a plurality of pixels, each of the pixels including a photoelectric conversion device; and a drive section driving each of the pixels to perform a readout operation, a pre-reset operation, and a main reset operation in this order, the readout operation being intended to read out charge from each of the pixels as a signal, the charge being obtained from the photoelectric conversion device, and the pre-reset operation and the main reset operation being intended to reset the charge in the each of the pixels. The drive section applies a voltage to the photoelectric conversion device, the voltage being different between in the pre-reset operation and in the main reset operation.

Abstract: A power control device 10 is a power control device that controls power supply from an outside to a plurality of power consuming devices 50, and includes a power supply control device 20 that obtains consumed power values of the plurality of power consuming devices 50 and predicts consumed power values, and controls power supply to the power consuming devices 50 when a prediction value of a total of the obtained consumed power values based on the prediction exceeds a predetermined power value.

Abstract: A radiation image pickup apparatus allowed to restore a change in characteristics in a pixel transistors caused by radiation, and a method of driving the same are provided. The radiation image pickup apparatus includes: a pixel section including a plurality of unit pixels and generating an electrical signal based on incident radiation, each of the unit pixels including one or more pixel transistors and a photoelectric conversion element; a drive section for selectively driving the unit pixels of the pixel section; and a characteristic restoring section including a first constant current source for annealing and a selector switch for changing a current path from the unit pixels to the first constant current source at the time of non-measurement of the radiation, and allowing an annealing current to flow through the pixel transistor, thereby restoring characteristics of the pixel transistor.

Abstract: A radiation image-pickup device includes: a plurality of pixels each configured to generate signal charge based on radiation; and a field effect transistor used to read the signal charge from each of the plurality of pixels, wherein the field effect transistor includes a semiconductor layer including an active layer and a low concentration impurity layer formed to be adjacent to the active layer, and a first and a second gate electrode disposed to face each other with the active layer interposed therebetween, and one or both of the first and the second gate electrodes are provided in a region not facing the low concentration impurity layer.

Abstract: A photoelectric conversion element includes a first semiconductor layer that exhibits a first conductivity type and is provided in a selective area over a substrate, a second semiconductor layer that exhibits a second conductivity type and is disposed opposed to the first semiconductor layer, and a third semiconductor layer that is provided between the first and second semiconductor layers and exhibits a substantially intrinsic conductivity type. The third semiconductor layer has at least one corner part that is not in contact with the first semiconductor layer.

Abstract: A radiation image pickup unit includes: a plurality of pixels each configured to generate a signal charge based on a radiation; and a field effect transistor to readout the signal charges from the plurality of pixels. The transistor includes a semiconductor layer including an active layer, a first gate electrode disposed to face the semiconductor layer, a first gate insulating film provided between the semiconductor layer and the first gate electrode, and including a first silicon oxide film, a source electrode and a drain electrode that are electrically connected to the semiconductor layer, and a second silicon oxide film provided in a layer different from the first gate insulating film. The first silicon oxide film of the first gate insulating film is a porous film lower in film density than the second silicon oxide film.