Abstract: A high-resolution or high-definition display apparatus is provided. The display apparatus includes a plurality of light-emitting elements, a light-receiving element, a coloring layer, and a first sidewall. The light-emitting elements include a first pixel electrode, a first light-emitting layer over the first pixel electrode, an intermediate layer over the first light-emitting layer, and a common electrode over a second light-emitting layer over a first intermediate layer. The first pixel electrode, the first light-emitting layer, the intermediate layer, and the second light-emitting layer are divided for each light-emitting element. The coloring layer is provided to include a region overlapping with the light-emitting element. The light-receiving element includes a second pixel electrode, a light-receiving layer over the second pixel electrode, and a common electrode over the light-receiving layer.

Abstract: A novel display apparatus that is highly convenient, useful, or reliable is provided. The display apparatus includes a first light-emitting device including a first electrode, a first layer, a first unit, and a second electrode and a second light-emitting device including a third electrode, a second layer, a second unit, and a fourth electrode. The first unit is between the first electrode and the second electrode and includes a first light-emitting material. The first layer is between the first unit and the first electrode and is in contact with the first electrode. The third electrode is adjacent to the first electrode. A first gap is between the third electrode and the first electrode. The second unit is between the third electrode and the fourth electrode and includes a second light-emitting material. The second layer is between the second unit and the third electrode and is in contact with the third electrode.

Abstract: Manufacturing equipment for a light-emitting device with which steps from formation to sealing of a light-emitting element can be successively performed is provided. With the manufacturing equipment for a light-emitting device, a deposition step, a lithography step, and an etching step for forming an organic EL element and a sealing step by formation of a protective layer can be successively performed. Accordingly, a downscaled organic EL element with high luminance and high reliability can be formed. Moreover, the manufacturing equipment can have an in-line system where apparatuses are arranged in the order of process steps for the light-emitting device, resulting in high throughput manufacturing.

Abstract: Provided is a high-resolution or high-definition display apparatus. The display apparatus includes a first light-emitting element, a second light-emitting element, and a sidewall. The first and second light-emitting elements each include a pixel electrode, a first light-emitting layer over the pixel electrode, an intermediate layer over the first light-emitting layer, a second light-emitting layer over the intermediate layer, and a common electrode over the second light-emitting layer. That is, the first and second light-emitting elements can have tandem structures. The pixel electrode, the first light-emitting layer, the intermediate layer, and the second light-emitting layer are separately provided between the light-emitting elements. The first light-emitting element and the second light-emitting element are adjacent to each other, and the sidewall is provided between the first light-emitting element and the second light-emitting element.

Abstract: A high-resolution display device is provided. A display device having both high display quality and high resolution is provided. The display device includes a first light-emitting element and a second light-emitting element. The first light-emitting element includes a first pixel electrode, a first EL layer, and a common electrode. The second light-emitting element includes a second pixel electrode, a second EL layer, and the common electrode. An insulating layer containing an inorganic insulating material is provided between the first pixel electrode and the second pixel electrode. The insulating layer includes a first region overlapping with the first EL layer, a second region overlapping with the second EL layer, and a third region positioned between the first region and the second region. A side surface of the first EL layer and a side surface of the second EL layer are positioned over the insulating layer to face each other.

Abstract: A high-resolution display device and a fabrication method thereof are provided. The display device includes a first insulating layer; a light-emitting element and a first conductive layer over the first insulating layer; a first layer over the first conductive layer; a second conductive layer over the first layer; a second insulating layer over the light-emitting element, the second conductive layer, and the first insulating layer; and a third conductive layer over the second insulating layer. The light-emitting element includes a fourth conductive layer, a second layer over the fourth conductive layer, a third layer over the second layer, and a fifth conductive layer over the third layer.

Abstract: Manufacturing equipment of a display device that is capable of successively performing steps from formation of a pixel circuit up to formation of a light-emitting element is provided. The manufacturing equipment includes a manufacturing apparatus of a light-emitting device that is capable of successively performing a film formation step, a lithography step, an etching step, and a sealing step for formation of an organic EL element and a manufacturing apparatus for formation of a pixel circuit that drives the organic EL element. Formation from the pixel circuit up to the organic EL element can be performed successively, so that a display device with a high yield and high reliability can be formed.

Abstract: A highly reliable display device is provided. The display device including a light-emitting element and an insulating layer placed to cover the light-emitting element and the light-emitting element includes a first conductive layer, an EL layer over the first conductive layer, and a second conductive layer over the EL layer and the insulating layer includes a first layer, a second layer over the first layer, and a third layer over the second layer and the first layer has a function of capturing or fixing at least one of water and oxygen, the second layer has a function of inhibiting diffusion of at least one of water and oxygen, and the third layer has a higher concentration of carbon than at least one of the first layer and the second layer.

Abstract: Manufacturing equipment of a light-emitting device with which steps from formation to sealing of a light-emitting element can be successively performed can be provided. In the manufacturing equipment of a light-emitting device, a deposition step, a lithography step, an etching step, and a sealing step by forming a protective layer for forming an organic EL element can be successively performed, whereby a downscaled organic EL element achieving high luminance and high reliability can be formed. Moreover, the manufacturing equipment can have an in-line system where apparatuses are arranged in the order of process steps for the light-emitting device, resulting in high throughput manufacturing.

Abstract: A high-resolution display device is provided. A display device with both high display quality and high resolution is provided. The display device includes a first light-emitting element and a second light-emitting element. The first light-emitting element includes a first pixel electrode, a first EL layer, and a common electrode. The second light-emitting element includes a second pixel electrode, a second EL layer, and the common electrode. An insulating layer is included between the first pixel electrode and the second pixel electrode. The insulating layer includes a first region overlapping with the first EL layer, a second region overlapping with the second EL layer, and a third region positioned between the first region and the second region. A side surface of the first EL layer and a side surface of the second EL layer are positioned over the insulating layer and are provided to face each other.

Abstract: A high-resolution or high-definition display device is provided.

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. A first conductor is formed over a substrate, a ferroelectric layer is formed over the first conductor, a second conductor is formed over the ferroelectric layer while substrate heating is performed, the ferroelectric layer includes hafnium oxide and zirconium oxide, and heat treatment at 500° C. or higher is not performed after the formation of the second conductor.

Abstract: A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes a first device layer to an n-th (n is a natural number of 2 or more) device layer, each of which includes a first barrier insulating film, a second barrier insulating film, a third barrier insulating film, an oxide semiconductor device, a first conductor, and a second conductor.

Abstract: A semiconductor device with a small variation in transistor characteristics can be provided. A step of forming an opening in a structure body including an oxide semiconductor device to reach the oxide semiconductor device, a step of embedding a first conductor in the opening, a step of forming a second conductor in contact with a top surface of the first conductor, a step of forming a first barrier insulating film by a sputtering method to cover the structure body, the first conductor, and the second conductor, and a step of forming a second barrier insulating film over the first barrier insulating film by an ALD method are included. The first barrier insulating film and the second barrier insulating film each have a function of inhibiting hydrogen diffusion.

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

Abstract: To inhibit an increase in voltage of an organic semiconductor device manufactured by a method including a step of forming an aluminum oxide film over and in contact with an organic semiconductor layer. An organic semiconductor device including a first electrode, a second electrode, an organic semiconductor layer, and a buffer layer is provided. The organic semiconductor layer is positioned between the first electrode and the second electrode. The buffer layer is positioned between the organic semiconductor layer and the second electrode. A side surface of the organic semiconductor layer and a side surface of the buffer layer are substantially aligned.

Abstract: A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor film, a source electrode and a drain electrode over the oxide semiconductor film, an interlayer insulating film placed to cover the oxide semiconductor film, the source electrode, and the drain electrode, a first gate insulating film over the oxide semiconductor film, a second gate insulating film over the first gate insulating film, and a gate electrode over the second gate insulating film. The interlayer insulating film has an opening overlapping with a region between the source electrode and the drain electrode, the first gate insulating film, the second gate insulating film, and the gate electrode are placed in the opening of the interlayer insulating film, the first gate insulating film includes oxygen and aluminum, and the first gate insulating film includes a region thinner that is than the second gate insulating film.

Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

Abstract: A semiconductor device with improved reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, and an insulator over the third oxide. The second oxide contains In, an element M (M is Al, Ga, Y, or Sn), and Zn. The first oxide and the third oxide each include a region whose In concentration is lower than that in the second oxide.