Patents by Inventor Yasumasa Yamane

Yasumasa Yamane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11211461
    Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.
    Type: Grant
    Filed: November 25, 2019
    Date of Patent: December 28, 2021
    Inventors: Shunpei Yamazaki, Daisuke Yamaguchi, Shinobu Kawaguchi, Yoshihiro Komatsu, Toshikazu Ohno, Yasumasa Yamane, Tomosato Kanagawa
  • Patent number: 11211467
    Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first insulator; a first oxide provided over the first insulator; a second oxide provided over the first oxide; a first conductor and a second conductor provided apart from each other over the second oxide; a third oxide provided over the second oxide, the first conductor, and the second conductor; a second insulating film provided over the third oxide; and a third conductor provided over the second oxide with the third oxide and the second insulating film positioned therebetween. The third oxide contains a metal element and nitrogen, and the metal element is bonded to nitrogen.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: December 28, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Tomoki Hiramatsu, Yusuke Nonaka, Noritaka Ishihara, Shota Sambonsuge, Yasumasa Yamane, Yuta Endo
  • Publication number: 20210320212
    Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.
    Type: Application
    Filed: June 25, 2021
    Publication date: October 14, 2021
    Inventors: Shunpei YAMAZAKI, Hideomi SUZAWA, Tetsuhiro TANAKA, Hirokazu WATANABE, Yuhei SATO, Yasumasa YAMANE, Daisuke MATSUBAYASHI
  • Patent number: 11133402
    Abstract: To provide a semiconductor device including an oxide semiconductor layer with high and stable electrical characteristics, the semiconductor device is manufactured by forming a first insulating layer, forming oxide over the first insulating layer and then removing the oxide n times (n is a natural number), forming an oxide semiconductor layer over the first insulating layer, forming a second insulating layer over the oxide semiconductor layer, and forming a conductive layer over the second insulating layer. Alternatively, the semiconductor device is manufactured by forming the oxide semiconductor layer over the first insulating layer, forming the second insulating layer over the oxide semiconductor layer, forming the oxide over the second insulating layer and then removing the oxide n times (n is a natural number), and forming the conductive layer over the second insulating layer.
    Type: Grant
    Filed: January 31, 2020
    Date of Patent: September 28, 2021
    Inventors: Tetsuhiro Tanaka, Ryo Tokumaru, Yasumasa Yamane, Akihisa Shimomura, Naoki Okuno
  • Patent number: 11049974
    Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.
    Type: Grant
    Filed: March 30, 2020
    Date of Patent: June 29, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hideomi Suzawa, Tetsuhiro Tanaka, Hirokazu Watanabe, Yuhei Sato, Yasumasa Yamane, Daisuke Matsubayashi
  • Publication number: 20210175361
    Abstract: A semiconductor device with improved reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, and an insulator over the third oxide. The second oxide contains In, an element M (M is Al, Ga, Y, or Sn), and Zn. The first oxide and the third oxide each include a region whose In concentration is lower than that in the second oxide.
    Type: Application
    Filed: November 28, 2018
    Publication date: June 10, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Takuya HANDA, Yasuharu HOSAKA, Shota SAMBONSUGE, Yasumasa YAMANE, Kenichi OKAZAKI
  • Publication number: 20210167211
    Abstract: A semiconductor device with high reliability is provided. The semiconductor device includes a first insulator, a second insulator, and a transistor; the transistor includes an oxide in a channel formation region; the oxide is surrounded by the first insulator; and the first insulator is surrounded by the second insulator. The first insulator includes a region with a lower hydrogen concentration than the second insulator. Alternatively, the first insulator includes a region with a lower hydrogen concentration than the second insulator and with a lower nitrogen concentration than the second insulator.
    Type: Application
    Filed: April 18, 2019
    Publication date: June 3, 2021
    Inventors: Shunpei YAMAZAKI, Yasumasa YAMANE, Takashi HIROSE, Teruyuki FUJI, Hajime KIMURA, Daigo SHIMADA
  • Publication number: 20210119052
    Abstract: A semiconductor material is an oxide including a metal element and nitrogen, in which the metal element is indium (In), an element M (M is aluminum (Al), gallium (Ga), yttrium (Y), or tin (Sn)), and zinc (Zn) and nitrogen is taken into an oxygen vacancy or bonded to an atom of the metal element.
    Type: Application
    Filed: November 15, 2018
    Publication date: April 22, 2021
    Inventors: Shunpei YAMAZAKI, Shota SAMBONSUGE, Yasumasa YAMANE, Yuta ENDO, Naoki OKUNO
  • Publication number: 20210098629
    Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.
    Type: Application
    Filed: December 14, 2020
    Publication date: April 1, 2021
    Inventors: Akihisa SHIMOMURA, Junichi KOEZUKA, Kenichi OKAZAKI, Yasumasa YAMANE, Yuhei SATO, Shunpei YAMAZAKI
  • Patent number: 10964787
    Abstract: A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.
    Type: Grant
    Filed: January 2, 2020
    Date of Patent: March 30, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tsutomu Murakawa, Toshihiko Takeuchi, Hiroki Komagata, Hiromi Sawai, Yasumasa Yamane, Shota Sambonsuge, Kazuya Sugimoto, Shunpei Yamazaki
  • Patent number: 10944014
    Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.
    Type: Grant
    Filed: July 17, 2019
    Date of Patent: March 9, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akihisa Shimomura, Yuhei Sato, Yasumasa Yamane, Yoshitaka Yamamoto, Hideomi Suzawa, Tetsuhiro Tanaka, Yutaka Okazaki, Naoki Okuno, Takahisa Ishiyama
  • Patent number: 10910407
    Abstract: A high-performance semiconductor device is provided. The semiconductor device includes a transistor, an insulating film over the transistor, an electrode, and a metal oxide over the insulating film. The transistor includes a first gate electrode, a first gate insulating film over the first gate electrode, an oxide over the first gate insulating film, a source electrode and a drain electrode electrically connected to the oxide, a second gate insulating film over the oxide, and a second gate electrode over the second gate insulating film. The electrode includes a region in contact with the insulating film. The first gate insulating film is in contact with the insulating film. The thicknesses of the insulating film over the second gate electrode, the insulating film over the source electrode, and the insulating film over the drain electrode are substantially the same, and the insulating film includes excess oxygen.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: February 2, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshinori Ando, Takashi Hamada, Yasumasa Yamane
  • Publication number: 20200266281
    Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first insulator; a first oxide provided over the first insulator; a second oxide provided over the first oxide; a first conductor and a second conductor provided apart from each other over the second oxide; a third oxide provided over the second oxide, the first conductor, and the second conductor; a second insulating film provided over the third oxide; and a third conductor provided over the second oxide with the third oxide and the second insulating film positioned therebetween. The third oxide contains a metal element and nitrogen, and the metal element is bonded to nitrogen.
    Type: Application
    Filed: October 29, 2018
    Publication date: August 20, 2020
    Inventors: Shunpei YAMAZAKI, Tomoki HIRAMATSU, Yusuke NONAKA, Noritaka ISHIHARA, Shota SAMBONSUGE, Yasumasa YAMANE, Yuta ENDO
  • Publication number: 20200243669
    Abstract: To provide a semiconductor device including an oxide semiconductor layer with high and stable electrical characteristics, the semiconductor device is manufactured by forming a first insulating layer, forming oxide over the first insulating layer and then removing the oxide n times (n is a natural number), forming an oxide semiconductor layer over the first insulating layer, forming a second insulating layer over the oxide semiconductor layer, and forming a conductive layer over the second insulating layer. Alternatively, the semiconductor device is manufactured by forming the oxide semiconductor layer over the first insulating layer, forming the second insulating layer over the oxide semiconductor layer, forming the oxide over the second insulating layer and then removing the oxide n times (n is a natural number), and forming the conductive layer over the second insulating layer.
    Type: Application
    Filed: January 31, 2020
    Publication date: July 30, 2020
    Inventors: Tetsuhiro Tanaka, Ryo Tokumaru, Yasumasa Yamane, Akihisa Shimomura, Naoki Okuno
  • Publication number: 20200227566
    Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.
    Type: Application
    Filed: March 30, 2020
    Publication date: July 16, 2020
    Inventors: Shunpei YAMAZAKI, Hideomi SUZAWA, Tetsuhiro TANAKA, Hirokazu WATANABE, Yuhei SATO, Yasumasa YAMANE, Daisuke MATSUBAYASHI
  • Publication number: 20200212185
    Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.
    Type: Application
    Filed: November 25, 2019
    Publication date: July 2, 2020
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Daisuke YAMAGUCHI, Shinobu KAWAGUCHI, Yoshihiro KOMATSU, Toshikazu OHNO, Yasumasa YAMANE, Tomosato KANAGAWA
  • Patent number: 10672913
    Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.
    Type: Grant
    Filed: July 2, 2018
    Date of Patent: June 2, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hideomi Suzawa, Tetsuhiro Tanaka, Hirokazu Watanabe, Yuhei Sato, Yasumasa Yamane, Daisuke Matsubayashi
  • Publication number: 20200135867
    Abstract: A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.
    Type: Application
    Filed: January 2, 2020
    Publication date: April 30, 2020
    Inventors: Tsutomu MURAKAWA, Toshihiko TAKEUCHI, Hiroki KOMAGATA, Hiromi SAWAI, Yasumasa YAMANE, Shota SAMBONSUGE, Kazuya SUGIMOTO, Shunpei YAMAZAKI
  • Patent number: 10600918
    Abstract: Provided is a semiconductor device having a structure with which a decrease in electrical characteristics that becomes more significant with miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film, a gate electrode overlapping with the first oxide semiconductor film, a first gate insulating film between the first oxide semiconductor film and the gate electrode, and a second gate insulating film between the first gate insulating film and the gate electrode. In the first gate insulating film, a peak appears at a diffraction angle 2? of around 28° by X-ray diffraction. A band gap of the first oxide semiconductor film is smaller than a band gap of the first gate insulating film, and the band gap of the first gate insulating film is smaller than a band gap of the second gate insulating film.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: March 24, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuhiro Tanaka, Toshihiko Takeuchi, Yasumasa Yamane
  • Patent number: 10600875
    Abstract: A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.
    Type: Grant
    Filed: June 21, 2017
    Date of Patent: March 24, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tsutomu Murakawa, Toshihiko Takeuchi, Hiroki Komagata, Hiromi Sawai, Yasumasa Yamane, Shota Sambonsuge, Kazuya Sugimoto, Shunpei Yamazaki