Abstract: A semiconductor laser element includes a substrate and a semiconductor stack. The semiconductor stack includes an N-side semiconductor layer, an active layer, a P-side semiconductor layer, and a P-type contact layer. The semiconductor stack includes two end faces. Laser light resonates between the two end faces. The semiconductor stack includes: a ridge portion; and a bottom portion surrounding the ridge portion in a top view of the semiconductor stack. The ridge portion protrudes upward from the bottom portion, is spaced apart from the two end faces, and includes at least a portion of the P-type contact layer. A current injection window is provided only on the ridge portion out of a top face of the semiconductor stack, the current injection window being a region into which a current is injected. A distance from a top face of the active layer to the bottom portion is constant.

Abstract: A semiconductor light-emitting element includes: a semiconductor stack including an n-type layer and a p-type layer and having at least one n exposure portion being a recess where the n-type layer is exposed; a p wiring electrode layer on the p-type layer; an insulating layer (i) continuously covering inner lateral surfaces of at least one n exposure portion and part of a top surface of the p wiring electrode layer and (ii) having an opening portion that exposes the n-type layer; an n wiring electrode layer disposed above the p-type layer and the p wiring electrode layer and in contact with the n-type layer in the opening portion; and at least one first n connecting member connected to the n wiring electrode layer in at least one first n terminal region. The n wiring electrode layer and the p-type layer are disposed below at least one first n terminal region.

Abstract: A semiconductor light-emitting element includes: a semiconductor stack including an n-type, layer and a p-type layer and having at least one n exposure portion being a recess where the n-type layer is exposed; a p wiring electrode layer on the p-type layer; an insulating layer (i) continuously covering inner lateral surfaces of at least one n exposure portion and part of a top surface of the p wiring electrode layer and (ii) having an opening portion that exposes the n-type layer; an n wiring electrode layer disposed above the p-type layer and the p wiring electrode layer and in contact with the n-type layer in the opening portion; and at least one first n connecting member connected to the n wiring electrode layer in at least one first n terminal region. The n wiring electrode layer and the p-type layer are disposed below at least one first n terminal region.

Abstract: A semiconductor light emitting element includes: a substrate; an n-type layer; a light emitting layer; a p-type layer; a p electrode located above the p-type layer; an n electrode located in a region that is above the n-type layer and in which the light emitting layer and the p-type layer are not located; a p-electrode bump connected to the p electrode; an n-electrode bump connected to the n electrode; and an insulation bump located in at least one of a region between the n-electrode bump and the p-type layer and a region whose distance from an end of the p-type layer closer to the n-electrode bump is shorter than a distance from the end to the p-electrode bump, in a plan view of the substrate. A surface of the insulation bump opposite to a surface facing the substrate is insulated from the p electrode and the n electrode.

Abstract: A semiconductor light-emitting element includes: a semiconductor stack including an n-type, layer and a p-type layer and haying at least one n exposure portion being a recess where the n-type layer is exposed; a p wiring electrode layer on the p-type layer; an insulating layer (i) continuously covering inner lateral surfaces of at least one n exposure portion and part of a top surface of the p wiring electrode layer and (ii) having an opening portion that exposes the n-type layer; an n wiring electrode layer disposed above the p-type layer and the p wiring electrode layer and in contact with the n-type layer in the opening portion; and at least one first n connecting member connected to the n wiring electrode layer in at least one first n terminal region. The n wiring electrode layer and the p-type layer are disposed below at least one first n terminal region.

Abstract: A light emitting diode includes a GaN substrate having a C-plane as a lamination surface; an n-type GaN layer which is laminated on the GaN substrate and which includes a first n-type GaN layer, an n-type intermediate layer, and a second n-type GaN layer; and an AlGaN strain adjustment layer laminated on the n-type GaN layer. Furthermore, the light emitting diode includes a light-emitting layer which is laminated on the AlGaN strain adjustment layer and which has a multi-quantum well structure having well layers and barrier layers, which are made of InGaN having a lattice constant in an a-axis direction larger than that of the AlGaN strain adjustment layer; and a p-type AlGaN cladding layer laminated on the light emitting layer.

Abstract: A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.

Abstract: A semiconductor laser diode apparatus capable of suppressing difficulty in handling of the semiconductor laser diode also when the width of a semiconductor laser diode portion is small is obtained. This method of fabricating a semiconductor laser diode apparatus includes steps of forming a plurality of first semiconductor laser diode portions on a first substrate at a prescribed interval in a second direction intersecting with a first direction in which cavities extend, bonding one or some of the plurality of first semiconductor laser diode portions to a second substrate, separating the one or some of the plurality of first semiconductor laser diode portions bonded to the second substrate from the first substrate; and dividing the second substrate along the second direction.

Abstract: A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.

Abstract: This semiconductor device includes a substrate, an underlayer formed on a main surface of the substrate, a first semiconductor layer and a second semiconductor layer. Unstrained lattice constants of the underlayer and the second semiconductor layer in a second direction are larger than a lattice constant of the substrate in the second direction in an unstrained state. Lattice constants of the underlayer and the second semiconductor layer in the second direction in a state of being formed on the main surface are larger than the lattice constant of the substrate in the second direction.

Abstract: A semiconductor laser diode element includes a semiconductor laser diode portion including a ridge portion extending in a first direction in which a cavity extends, a groove formed along the ridge portion and a support portion formed along the groove on a side farther from the ridge portion and holding the groove between the support portion and the ridge portion and a support substrate bonded to the semiconductor laser diode portion through a fusion layer, wherein the fusion layer is formed so as to be embedded in the groove, a space from the ridge portion to the support substrate and a space from the support portion to the support substrate.

Abstract: A semiconductor light-emitting device having high reliability is obtained while suppressing separation between a support substrate and a semiconductor element layer. This semiconductor light-emitting device includes a support substrate (1), a first bonding layer (2a) formed on the support substrate (1), a second bonding layer (2b) formed on the first bonding layer (2a), a third bonding layer (2c) formed on the second bonding layer (2b), and a semiconductor element layer (3) formed on the third bonding layer (2c). The melting point of the second bonding layer (2b) is lower than the melting points of the first bonding layer (2a) and the third bonding layer (2c).

Abstract: A semiconductor laser device having a cladding layer in the vicinity of an active layer capable of being inhibited from cracking is obtained. This semiconductor laser device (100) includes a first semiconductor device portion (120) and a support substrate (10) bonded to the first semiconductor device portion, and the first semiconductor device portion has a cavity, a first conductivity type first cladding layer (22) having a first region (22a) having a first width in a second direction (direction A) intersecting with a first direction (direction B) in which the cavity extends and a second region (22b) having a second width smaller than the first width in the second direction, formed on the first region, and a first active layer (23) and a second conductivity type second cladding layer (24) formed on the second region of the first cladding layer.

Abstract: A semiconductor laser device capable of flexibly coping even with a case where a large output power difference is required between a plurality of laser elements having different lasing wavelengths when reproducing white light is obtained. This semiconductor laser device (100) includes a red semiconductor laser element (10) having one or a plurality of laser beam emitting portions, a green semiconductor laser element (30) having one or a plurality of laser beam emitting portions, and a blue semiconductor laser element (50) having one or a plurality of laser beam emitting portions.

Abstract: A semiconductor laser device capable of easily obtaining a desired hue is obtained. This semiconductor laser device (100) includes a green semiconductor laser element (30) having one or a plurality of laser beam emitting portions, a blue semiconductor laser element (50) having one or a plurality of laser beam emitting portions, and a red semiconductor laser element (10) having one or a plurality of laser beam emitting portions.

Abstract: A nitride-based semiconductor light-emitting diode capable of suppressing complication of a manufacturing process while improving light extraction efficiency from a light-emitting layer and further improving flatness of a semiconductor layer is obtained. This nitride-based semiconductor light-emitting diode (30) includes a substrate (11) formed with a recess portion (21) on a main surface and a nitride-based semiconductor layer (12) having a light-emitting layer (14) on the main surface and including a first side surface (12a) having a (000-1) plane formed to start from a first inner side surface (21a) of the recess portion and a second side surface (12b) formed at a region opposite to the first side surface with the light-emitting layer therebetween to start from a second inner side surface (21b) of the recess portion on the main surface.

Abstract: A nitride-based semiconductor device includes a substrate made of a nitride-based semiconductor, a device layer formed on the substrate, and an electrode formed on a surface of the substrate opposite to the device layer. The substrate includes a first surface having a nonpolar plane or a semipolar plane, a second surface opposite to the first surface, a defect concentration region extending in a direction inclined with respect to a normal direction of the first surface from the first surface toward the second surface and penetrating to the second surface and a current path region separated from other region of the substrate by the defect concentration region employed as a boundary, the defect concentration region is not exposed on the first surface, and the electrode is formed on the second surface in the current path region.

Abstract: A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.

Abstract: A method of manufacturing a nitride semiconductor device includes the steps of; forming a stripping layer including In on a substrate; forming a nitride semiconductor layer on the stripping layer; causing a decomposition of the stripping layer by increasing a temperature of the stripping layer; irradiating the stripping layer with laser light; and separating the nitride semiconductor layer from the substrate.

Abstract: This semiconductor laser device includes a substrate, a blue semiconductor laser element, formed on the surface of a substrate, including a first active layer made of a nitride-based semiconductor and having a first major surface of a non-C plane and a green semiconductor laser element, formed on the surface of the substrate, including a second active layer made of a nitride-based semiconductor and having a second major surface of a surface orientation substantially identical to the non-C plane.