Patents by Inventor Yasunobu Sugimoto
Yasunobu Sugimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8415188Abstract: A method for manufacturing a nitride semiconductor laser element has: (a) forming a nitride semiconductor layer on a substrate; (b) forming a ridge on a surface of the nitride semiconductor; (c) forming a first protective film on the nitride semiconductor layer including the ridge; (d) removing the first protective film from at least a top face of the ridge; (e) forming a conductive layer composed of a two or more of multilayer film with different compositions on the first protective film and the nitride semiconductor layer including the ridge, and introducing a gap at locations of at least at the uppermost conductive layer corresponding to the base portion from the ridge shoulders; and (f) removing part of the conductive layer through a gap to form a void defined by the first protective film and the conductive layer at least on the ridge base portions.Type: GrantFiled: September 6, 2011Date of Patent: April 9, 2013Assignee: Nichia CorporationInventors: Hitoshi Maegawa, Mitsuhiro Nonaka, Yasunobu Sugimoto
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Publication number: 20120058585Abstract: A method for manufacturing a nitride semiconductor laser element has: (a) forming a nitride semiconductor layer on a substrate; (b) forming a ridge on a surface of the nitride semiconductor; (c) forming a first protective film on the nitride semiconductor layer including the ridge; (d) removing the first protective film from at least a top face of the ridge; (e) forming a conductive layer composed of a two or more of multilayer film with different compositions on the first protective film and the nitride semiconductor layer including the ridge, and introducing a gap at locations of at least at the uppermost conductive layer corresponding to the base portion from the ridge shoulders; and (f) removing part of the conductive layer through a gap to form a void defined the first protective film and the conductive layer at least on the ridge base portions.Type: ApplicationFiled: September 6, 2011Publication date: March 8, 2012Applicant: NICHIA CORPORATIONInventors: Hitoshi MAEGAWA, Mitsuhiro NONAKA, Yasunobu SUGIMOTO
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Patent number: 7796663Abstract: To provide a semiconductor laser device which has no ripple and can afford better FFP having a pattern near a Gaussian distribution upon operation at the high output, the semiconductor laser comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, the laminate structure having a waveguide region to guide a light and resonator planes for laser oscillation on both ends, characterized in that the laminate structure has a non-resonator plane on one end side and the non-resonator plane is covered with a shading layer.Type: GrantFiled: July 28, 2006Date of Patent: September 14, 2010Assignee: Nichia CorporationInventors: Yasunobu Sugimoto, Masanao Ochiai, Akinori Yoneda
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Patent number: 7323724Abstract: A nitride semiconductor device includes a semiconductor layer, a first electrode for establishing an ohmic contact disposed on the semiconductor layer, and a second electrode on the first electrode, having a different shape from that of the first electrode. A joint region is formed with the upper layer of the first electrode and the lower layer of the second electrode. The joint region comprises an element of the platinum group.Type: GrantFiled: December 20, 2005Date of Patent: January 29, 2008Assignee: Nichia CorporationInventors: Yasunobu Sugimoto, Akinori Yoneda
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Publication number: 20060262823Abstract: To provide a semiconductor laser device which has no ripple and can afford better FFP having a pattern near a Gaussian distribution upon operation at the high output, the semiconductor laser comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, the laminate structure having a waveguide region to guide a light and resonator planes for laser oscillation on both ends, characterized in that the laminate structure has a non-resonator plane on one end side and the non-resonator plane is covered with a shading layer.Type: ApplicationFiled: July 28, 2006Publication date: November 23, 2006Applicant: Nichia CorporationInventors: Yasunobu Sugimoto, Masanao Ochiai, Akinori Yoneda
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Patent number: 7103082Abstract: To provide a semiconductor laser device which has no ripple and can afford better FFP having a pattern near a Gaussian distribution upon operation at the high output, the semiconductor laser comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, the laminate structure having a waveguide region to guide a light and resonator planes for laser oscillation on both ends, characterized in that the laminate structure has a non-resonator plane on one end side and the non-resonator plane is covered with a shading layer.Type: GrantFiled: May 31, 2002Date of Patent: September 5, 2006Assignee: Nichia CorporationInventors: Yasunobu Sugimoto, Masanao Ochiai, Akinori Yoneda
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Publication number: 20060091417Abstract: A nitride semiconductor device includes a semiconductor layer, a first electrode for establishing an ohmic contact disposed on the semiconductor layer, and a second electrode on the first electrode, having a different shape from that of the first electrode. A joint region is formed with the upper layer of the first electrode and the lower layer of the second electrode. The joint region comprises an element of the platinum group.Type: ApplicationFiled: December 20, 2005Publication date: May 4, 2006Inventors: Yasunobu Sugimoto, Akinori Yoneda
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Patent number: 7009218Abstract: A nitride semiconductor device includes a semiconductor layer, a first electrode for establishing an ohmic contact disposed on the semiconductor layer, and a second electrode on the first electrode, having a different shape from that of the first electrode. A joint region is formed with the upper layer of the first electrode and the lower layer of the second electrode. The joint region comprises an element of the platinum group.Type: GrantFiled: February 19, 2004Date of Patent: March 7, 2006Assignee: Nichia CorporationInventors: Yasunobu Sugimoto, Akinori Yoneda
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Publication number: 20040165635Abstract: To provide a semiconductor laser device which has no ripple and can afford better FFP having a pattern near a Gaussian distribution upon operation at the high output, the semiconductor laser comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, the laminate structure having a waveguide region to guide a light and resonator planes for laser oscillation on both ends, characterized in that the laminate structure has a non-resonator plane on one end side and the non-resonator plane is covered with a shading layer.Type: ApplicationFiled: December 1, 2003Publication date: August 26, 2004Inventors: Yasunobu Sugimoto, Masanao Ochiai, Akinori Yoneda
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Publication number: 20040159836Abstract: A nitride semiconductor device includes a semiconductor layer, a first electrode for establishing an ohmic contact disposed on the semiconductor layer, and a second electrode on the first electrode, having a different shape from that of the first electrode. A joint region is formed with the upper layer of the first electrode and the lower layer of the second electrode. The joint region comprises an element of the platinum group.Type: ApplicationFiled: February 19, 2004Publication date: August 19, 2004Inventors: Yasunobu Sugimoto, Akinori Yoneda