Abstract: The invention provides a gold-supporting catalyst comprising gold nanoparticles and a carrier consisting of porous ceramic obtained by firing a mixture comprising an aluminum compound, a lime component, and a plastic clay containing 1% by mass or less of feldspars and quartz, wherein the gold nanoparticles are supported in an amount of 0.01 to 10 parts by mass on the carrier based on 100 parts by mass of the carrier.

Abstract: A camera system including a photoelectric convertor including a first and second electrode, and a photoelectric conversion layer; and a correction circuit correcting a signal corresponding to a potential change of the second electrode. The photoelectric convertor has a photoelectric conversion characteristic in which rate of change of the photoelectric conversion efficiency with respect to a first bias voltage between the first electrode and the second electrode when the first bias voltage is in a first voltage range, is greater than the rate of change with respect to a second bias voltage when the second bias voltage is in a second voltage range that is higher than the first voltage range, and a bias voltage between the first electrode and the second electrode exists in the first voltage range, and the correction circuit corrects the signal so that variation of an output regarding an amount of incident light becomes linear.

Abstract: An imaging device including pixels and processing circuitry, where the pixels capture a first image in a first exposure period within a frame period and capture a second image in a second exposure period within the frame period to generate multiple-exposure image data that include the first image and the second image in a multiplexed state, the second exposure period being different from the first exposure period, the second image being different from the first image in brightness or color, and the processing circuitry detects an image of a moving subject from the multiple-exposure image data.

Abstract: A method for manufacturing a photoelectric conversion element includes providing a base structure including a semiconductor substrate having a principal surface, a first electrode located on or above the principal surface, second electrodes which are located on or above the principal surface and which are one- or two-dimensionally arranged, and a photoelectric conversion film covering at least the second electrodes; forming a mask layer on the photoelectric conversion film, the mask layer being conductive and including a covering section covering a portion of the photoelectric conversion film that overlaps the second electrodes in plan view; and partially removing the photoelectric conversion film by immersing the base structure and the mask layer in an etchant.

Abstract: An imaging device includes: a photoelectric converter including first and second electrodes, and a photoelectric conversion layer located between the first electrode and the second electrode; a voltage supply circuit applying a bias voltage between the first electrode and the second electrode; an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor configured to output a signal corresponding to a potential of the second electrode; and a detection circuit configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range when the level detected by the detection circuit is greater than or equal to a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range when the level detected by the detection circuit is less than a second threshold value.

Abstract: An imaging device includes at least one unit pixel cell including a photoelectric converter and a voltage application circuit. The photoelectric converter includes a first electrode, a light-transmitting second electrode, a first photoelectric conversion layer containing a first material and a second photoelectric conversion layer containing a second material. The impedance of the first photoelectric conversion layer is larger than the impedance of the second photoelectric conversion layer. The voltage application circuit applies a first voltage or a second voltage having a larger absolute value than the first voltage selectively between the first electrode and the second electrode.

Abstract: An imaging device including pixels and processing circuitry, where the pixels capture a first image in a first exposure period within a frame period and capture a second image in a second exposure period within the frame period to generate multiple-exposure image data that include the first image and the second image in a multiplexed state, the second exposure period being different from the first exposure period, the second image being different from the first image in brightness or color, and the processing circuitry detects an image of a moving subject from the multiple-exposure image data.

Abstract: An imaging device including a pixel that includes: a photoelectric converter that converts light into a charge; a charge accumulation region to which the charge is input; and an amplifier transistor that includes a gate electrically connected to the charge accumulation region. The amplifier transistor being configured to output a signal that corresponds to a potential of the charge accumulation region. The imaging device further including a detection circuit that is configured to detect a level of the signal from the amplifier transistor, wherein a sensitivity of the pixel is caused to be increased, in a case where the level detected by the detection circuit is greater than a first threshold value.

Abstract: An imaging device including a pixel, and a controller that sets a sensitivity of the pixel according to an external signal, where the external signal includes sound, vibration or inclination.

Abstract: An imaging device includes a first pixel. The first pixel has a photoelectric converting portion, a first capacitance element, and a first transistor. The photoelectric converting portion converts incident light into signal charge. The first capacitance element includes a first terminal and a second terminal, the first terminal being electrically connected to the photoelectric converting portion in at least a period of exposure. The first transistor includes a first source and a first drain, one of the first source and the first drain is electrically connected to the second terminal, and a direct-current potential is applied to the other of the first source and the first drain.

Abstract: A molded sintered body containing a mayenite type compound, an inorganic binder sintered material, and a transition metal, wherein a content of the inorganic binder sintered material is 3 to 30 parts by mass with respect to 100 parts by mass of the molded sintered body, and the molded sintered body has at least one pore peak in each of a pore diameter range of 2.5 to 20 nm and a pore diameter range of 20 to 350 nm. A method for producing the molded sintered body, including mixing a precursor of a mayenite type compound and a raw material of an inorganic binder sintered material to prepare a mixture; molding the mixture to prepare a molded body of the mixture; firing the molded body to prepare a fired product; and supporting a transition metal on the fired product to produce a molded sintered body.

Abstract: An imaging device including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer; a voltage supply circuit that applies a bias voltage between the first electrode and the second electrode; an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor being configured to output a signal that corresponds to a potential of the gate; and a detection circuit that is configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range, in a case where the level detected by the detection circuit is less than a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range, in a case where the level detected by the detection circuit is greater than a second threshold value.

Abstract: A method for manufacturing a photoelectric conversion element includes providing a base structure including a semiconductor substrate having a principal surface, a first electrode located on or above the principal surface, second electrodes which are located on or above the principal surface and which are one- or two-dimensionally arranged, and a photoelectric conversion film covering at least the second electrodes; forming a mask layer on the photoelectric conversion film, the mask layer being conductive and including a covering section covering a portion of the photoelectric conversion film that overlaps the second electrodes in plan view; and partially removing the photoelectric conversion film by immersing the base structure and the mask layer in an etchant.

Abstract: The invention provides a gold-supporting catalyst comprising gold nanoparticles and a carrier consisting of porous ceramic obtained by firing a mixture comprising an aluminum compound, a lime component, and a plastic clay containing 1% by mass or less of feldspars and quartz, wherein the gold nanoparticles are supported in an amount of 0.01 to 10 parts by mass on the carrier based on 100 parts by mass of the carrier.

Abstract: An imaging device including a pixel, and a controller that sets a sensitivity of the pixel according to an external signal, where the external signal includes sound, vibration or inclination.

Abstract: An imaging device includes at least one unit pixel cell including a photoelectric converter and a voltage application circuit. The photoelectric converter includes a first electrode, a light-transmitting second electrode, a first photoelectric conversion layer containing a first material and a second photoelectric conversion layer containing a second material. The impedance of the first photoelectric conversion layer is larger than the impedance of the second photoelectric conversion layer. The voltage application circuit applies a first voltage or a second voltage having a larger absolute value than the first voltage selectively between the first electrode and the second electrode.

Abstract: An imaging device includes: a first imaging cell including a first photoelectric converter that generates a first signal by photoelectric conversion, and a first signal processing circuit that is electrically connected to the first photoelectric converter and detects the first signal; and a second imaging cell including a second photoelectric converter that generates a second signal by photoelectric conversion, and a second signal processing circuit that is electrically connected to the second photoelectric converter and detects the second signal. Sensitivity of the first imaging cell is higher than sensitivity of the second imaging cell. The first signal processing circuit has a circuit configuration different from the second signal processing circuit. An operation frequency of the first signal processing circuit is different from an operation frequency of the second signal processing circuit.

Abstract: An imaging device includes a first pixel. The first pixel has a photoelectric converting portion, a first capacitance element, and a first transistor. The photoelectric converting portion converts incident light into signal charge. The first capacitance element includes a first terminal and a second terminal, the first terminal being electrically connected to the photoelectric converting portion in at least a period of exposure. The first transistor includes a first source and a first drain, one of the first source and the first drain is electrically connected to the second terminal, and a direct-current potential is applied to the other of the first source and the first drain.

Abstract: A method for manufacturing a photoelectric conversion element includes providing a base structure including a semiconductor substrate having a principal surface, a first electrode located on or above the principal surface, second electrodes which are located on or above the principal surface and which are one- or two-dimensionally arranged, and a photoelectric conversion film covering at least the second electrodes; forming a mask layer on the photoelectric conversion film, the mask layer being conductive and including a covering section covering a portion of the photoelectric conversion film that overlaps the second electrodes in plan view; and partially removing the photoelectric conversion film by immersing the base structure and the mask layer in an etchant.

Abstract: An imaging device includes: a photoelectric converter including first and second electrodes, and a photoelectric conversion layer located between the first electrode and the second electrode; a voltage supply circuit applying a bias voltage between the first electrode and the second electrode; an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor configured to output a signal corresponding to a potential of the second electrode; and a detection circuit configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range when the level detected by the detection circuit is greater than or equal to a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range when the level detected by the detection circuit is less than a second threshold value.