Abstract: A polysilane production process comprising reacting a specific silane compound typified by a cyclic silane compound represented by the following formula (2) in the presence of a binuclear metal complex represented by the following formula (4). SijH2j??(2) (in the formula (2), j is an integer of 3 to 10.) [CpM(?-CH2)]2??(4) (in the formula (4), Cp is a cyclopentadienyl-based ligand, M is a metal atom selected from Rh and Ir, and the bond between M's is a double bond.

Abstract: A trench embedding method comprising the steps of applying a composition for filling trenches which comprises a complex of an amine compound and aluminum hydride and an organic solvent to a substrate having trenches; and heating and/or exposing the composition to light to convert the complex into aluminum in the trenches so as to embed aluminum into the trenches. According to this method, even when aluminum is embedded into trenches having a fine and complex pattern, embedding performance is high and trenches in a large substrate can filled. This method can be carried out at a low cost.

Abstract: There are provided a composition and method for forming a silicon-cobalt film at low production cost without expensive vacuum equipment and high-frequency generator. The composition is a silicon-cobalt film forming composition comprising a silicon compound and a cobalt compound. A silicon-cobalt film is formed by applying this composition on a substrate and subjecting the resulting substrate to a heat treatment and/or a light treatment.

Abstract: A silicone resin which is represented by the following rational formula (1) and solid at 120° C.: (H2SiO)n(HSiO1.5)m(SiO2)k??(1) wherein n, m and k are each a number, with the proviso that, when n+m+k=1, n is not less than 0.5, m is more than 0 and not more than 0.95 and k is 0 to 0.2. The silicone resin of the present invention can be advantageously used in a composition for forming a trench isolation having a high aspect ratio.

Abstract: There are provided a silane polymer having a higher molecular weight from the viewpoints of wettability when applied to a substrate, a boiling point and safety, a composition which can form a high-quality silicon film easily, a silicon film forming composition which comprises a silane polymer obtained by irradiating a photopolymerizable silane compound with light of specific wavelength range to photopolymerize it, and a method for forming a silicon film which comprises applying the composition to a substrate and subjecting the coating film to a heat treatment and/or a light treatment.

Abstract: A composition for forming a silicon.aluminum film, containing a silicon compound and an aluminum compound. The silicon.aluminum film is obtained by forming a coating film of the above composition and treating it with heat and/or light.

Abstract: A method of forming a metal film, comprising the steps of: sublimating at least one metal compound selected from the group consisting of a cobalt compound, a ruthenium compound and a tungsten compound from a substrate having the above metal compound film formed thereon; and supplying the sublimated gas to a substrate for forming a metal film to decompose the gas, thereby forming a metal film on the surface of the first substrate. A method of forming a metal film which serves as a seed layer when a metal, especially copper is to be filled into the trenches of a substrate as an insulator by plating and as a barrier layer for preventing the migration of metal atoms to an insulating film when the substrate has no barrier layer and has excellent adhesion to the insulator.

Abstract: There are provided a silicon-film-forming composition containing silicon particles and a dispersion medium and a method for forming a silicon film by forming a coating film of the silicon-film-forming composition on a substrate and subjecting the coating film to instantaneous fusion, a heat treatment or a light treatment. According to the composition and the method, a polysilicon film with a desired thickness which may be used as a silicon film for a solar battery can be formed efficiently and easily.

Abstract: A trench embedding method comprising the steps of applying a composition for filling trenches which comprises a complex of an amine compound and aluminum hydride and an organic solvent to a substrate having trenches; and heating and/or exposing the composition to light to convert the complex into aluminum in the trenches so as to embed aluminum into the trenches. According to this method, even when aluminum is embedded into trenches having a fine and complex pattern, embedding performance is high and trenches in a large substrate can filled. This method can be carried out at a low cost.

Abstract: A novel dye which has high conversion efficiency, excellent weatherability and heat resistance when it is used in a dye-sensitized solar cell and a dye-sensitized solar cell comprising this dye. This dye is represented by the following formula (1): ML1L2X1X2??(1) wherein M is an element of any one of the groups 8 to 10 of the long form of the periodic table, L1 and L2 are each independently a bidentate ligand composed of a specific bipyridine, and X1 and X2 are each independently a monovalent atomic group or unidentate ligand.

Abstract: A composition for forming an aluminum fine particle dispersed film, which comprises a complex of an amine compound and aluminum hydride and a polymer component having film formability is prepared, and a film formed therefrom is heated or exposed to light to manufacture an aluminum fine particle dispersed film. The above composition can provide an Al fine particle dispersed film which can be used in electronic devices or optical devices, an Al wiring pattern film and an Al mirror film.

Abstract: It is an object of the present invention to provide a high order silane composition that contains a polysilane having a higher molecular weight than conventionally, this being from the viewpoints of wettability when applying onto a substrate, boiling point and safety, and hence in particular enables a high-quality silicon film to be formed easily, and also a method of forming an excellent silicon film using the composition. The present invention attains this object by providing a high order silane composition containing a polysilane obtained through photopolymerization by irradiating a solution of a photopolymerizable silane or a photopolymerizable like-liquid silane with ultraviolet light. Moreover, the present invention provides a method of forming a silicon film comprising the step of applying such a high order silane composition onto a substrate.

Abstract: A ruthenium compound from which high-quality film-like metal ruthenium can be obtained and a process for producing a metal ruthenium film from the ruthenium compound by chemical vapor deposition.

Abstract: It is an object of the present invention to provide a high order silane composition that contains a polysilane having a higher molecular weight than conventionally, this being from the viewpoints of wettability when applying onto a substrate, boiling point and safety, and hence in particular enables a high-quality silicon film to be formed easily, and also a method of forming an excellent silicon film using the composition. The present invention attains this object by providing a high order silane composition containing a polysilane obtained through photopolymerization by irradiating a solution of a photopolymerizable silane or a photopolymerizable like-liquid silane with ultraviolet light. Moreover, the present invention provides a method of forming a silicon film comprising the step of applying such a high order silane composition onto a substrate.

Abstract: There are provided a composition and method for forming a silicon-cobalt film at low production cost without expensive vacuum equipment and high-frequency generator. The composition is a silicon-cobalt film forming composition comprising a silicon compound and a cobalt compound. A silicon-cobalt film is formed by applying this composition on a substrate and subjecting the resulting substrate to a heat treatment and/or a light treatment.

Abstract: A composition for forming a silicon.aluminum film, containing a silicon compound and an aluminum compound. The silicon.aluminum film is obtained by forming a coating film of the above composition and treating it with heat and/or light. The silicon.aluminum film can easily be formed from the above composition by the above method at a low cost without requiring an expensive vacuum apparatus or high-frequency wave generator.

Abstract: A ruthenium compound from which high-quality film-like metal ruthenium can be obtained and a process for producing a metal ruthenium film from the ruthenium compound by chemical vapor deposition. The ruthenium compound as a material for chemical vapor deposition is represented by the following formula (1), for example.

Abstract: A chemical vapor deposition material comprising a ruthenium compound having a ligand represented by the following formula: wherein R1, R2 and R3 are each independently a hydrogen atom, fluorine atom, trifluoromethyl group or hydrocarbon group having 1 to 10 carbon atoms, and a method of forming a ruthenium film from the chemical vapor deposition material by chemical vapor deposition. A high-quality ruthenium film even when it is very thin can be obtained.

Abstract: A chemical vapor deposition material comprising a ruthenium compound having a ligand represented by the following formula: wherein R1, R2 and R3 are each independently a hydrogen atom, fluorine atom, trifluoromethyl group or hydrocarbon group having 1 to 10 carbon atoms, and a method of forming a ruthenium film from the chemical vapor deposition material by chemical vapor deposition. A high-quality ruthenium film even when it is very thin can be obtained.

Abstract: There are provided a conductive film forming composition capable of forming wiring or an electrode which can be suitably used in a variety of electronic devices, easily and inexpensively, a method for forming a film using the composition, a conductive film formed by the method, and wiring or an electrode which comprises the film. A conductive film forming composition comprising a complex of an amine compound and aluminum hydride and an organic solvent is applied on a substrate and then subjected to a heat treatment and/or irradiation with light, whereby a conductive film such as an electrode or wiring is produced.