Abstract: An imaging device includes a first pixel, a second pixel, and a correction circuit. First signals respectively corresponding to the first pixel and the second pixel are input to the correction circuit. The correction circuit outputs second signals in response to the first signals. Each of the first pixel and the second pixel includes a photoelectric converter, a charge storage region, and a capacitance circuit. The photoelectric converter converts light into signal charges. The charge storage region stores the signal charges. The capacitance circuit varies a capacitance value of the charge storage region in response to a potential of the charge storage region. The correction circuit corrects the first signal of at least one of the first pixel or the second pixel to the second signal in a case where the same amount of light is incident on the first pixel and the second pixel.

Abstract: An imaging device 100 includes a pixel array PA. A first period, a third period, and a second period appear in this order in a first frame. During the first period, pixel signal readout is performed on a first row in the pixel array PA. During the second period, pixel signal readout is performed on a second row in the pixel array PA. Each of the first period and the second period is a high-sensitivity exposure period. The third period is a low-sensitivity exposure period.

Abstract: An imaging device includes multiple pixels, a first analog-to-digital (AD) converter and a second AD converter that receive analog signals read from the pixels and output digital signals the analog signals, a first frame memory, and an image processor. The analog signals include a reset signal representing a reset level and a pixel signal representing an image of a subject. The first frame memory temporarily stores a first digital signal that is one of the digital signals, corresponding to the reset signal, output from the first AD converter and the second AD converter. The image processor outputs a difference between the first digital signal stored on the first frame memory and a second digital signal that is another one of the digital signals, corresponding to the pixel signal on pixels from which the reset signal is read, output from the first AD converter and the second AD converter.

Abstract: An imaging device 100 includes a pixel array PA. A first period, a third period, and a second period appear in this order in a first frame. During the first period, pixel signal readout is performed on a first row in the pixel array PA. During the second period, pixel signal readout is performed on a second row in the pixel array PA. Each of the first period and the second period is a high-sensitivity exposure period. The third period is a low-sensitivity exposure period.

Abstract: An imaging device includes multiple pixels, a first analog-to-digital (AD) converter and a second AD converter that receive analog signals read from the pixels and output digital signals the analog signals, a first frame memory, and an image processor. The analog signals include a reset signal representing a reset level and a pixel signal representing an image of a subject. The first frame memory temporarily stores a first digital signal that is one of the digital signals, corresponding to the reset signal, output from the first AD converter and the second AD converter. The image processor outputs a difference between the first digital signal stored on the first frame memory and a second digital signal that is another one of the digital signals, corresponding to the pixel signal on pixels from which the reset signal is read, output from the first AD converter and the second AD converter.

Abstract: An imaging device includes a photoelectric conversion layer that includes a first surface and a second surface opposite the first surface and that generates signal charge, at least one pixel electrode located on the first surface of the photoelectric conversion layer, a control electrode located on the first surface of the photoelectric conversion layer, a counter electrode located on the second surface of the photoelectric conversion layer and opposite the at least one pixel electrode and the control electrode, and a charge accumulator that is connected to the at least one pixel electrode and that accumulates the signal charge. There is a line segment connecting two points on the at least one pixel electrode to each other and overlapping the control electrode in plan view.

Abstract: An imaging device including a pixel array including pixels, each pixel including a photoelectric converter including a first and second electrode, and a first photoelectric conversion layer between the first and second electrode, and a transistor having a gate coupled to the first electrode, the transistor outputting a signal corresponding to an amount of the signal charge collected by the first electrode. The device further including voltage supply circuitry coupled to the second electrode of each of the pixels, where the voltage supply circuitry, in each of consecutive frame periods, supplies a first voltage two or more times to form exposure periods in which the signal charge is collected by the first electrode, and supplies a second voltage one or more times to form non-exposure periods that separate the exposure periods from each other, and start time of each of the exposure periods is periodic over the consecutive frame periods.

Abstract: A camera system includes: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer converting incident light into electric charge; voltage application circuitry that supplies a first voltage and a second voltage less than the first voltage between the first electrode and the second electrode such that the first voltage is applied at least one time in a frame; and a controller that derives a total length of at least one period in which the first voltage is applied in the frame, the total length corresponding to an attenuation ratio set for the frame, and causes the voltage supply circuitry to supply the first voltage in the at least one period having the total length in the frame.

Abstract: A camera system including a photoelectric convertor including a first and second electrode, and a photoelectric conversion layer; and a correction circuit correcting a signal corresponding to a potential change of the second electrode. The photoelectric convertor has a photoelectric conversion characteristic in which rate of change of the photoelectric conversion efficiency with respect to a first bias voltage between the first electrode and the second electrode when the first bias voltage is in a first voltage range, is greater than the rate of change with respect to a second bias voltage when the second bias voltage is in a second voltage range that is higher than the first voltage range, and a bias voltage between the first electrode and the second electrode exists in the first voltage range, and the correction circuit corrects the signal so that variation of an output regarding an amount of incident light becomes linear.

Abstract: An imaging device including a semiconductor substrate including a first surface that receives light from outside, and a second surface opposite to the first surface; a first transistor located on the second surface; and a photoelectric converter that faces the second surface and that receives light transmitted through the semiconductor substrate. The semiconductor substrate is a silicon substrate or a silicon compound substrate, and the photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that contains a material which absorbs light having a first wavelength longer than or equal to 1.1 ?m, and the material has a quantum nanostructure.

Abstract: An imaging device including pixels and processing circuitry, where the pixels capture a first image in a first exposure period within a frame period and capture a second image in a second exposure period within the frame period to generate multiple-exposure image data that include the first image and the second image in a multiplexed state, the second exposure period being different from the first exposure period, the second image being different from the first image in brightness or color, and the processing circuitry detects an image of a moving subject from the multiple-exposure image data.

Abstract: An imaging device including pixels each including a photoelectric converter that converts light into a signal charge; and controller, where the controller causes the pixels to perform global shutter operation in a first frame period and causes the pixels to perform rolling shatter operation in a second frame period different from the first frame period.

Abstract: In an imaging device, a first digital signal corresponding to a first analog signal read out from a pixel, and a second digital signal corresponding to the amount of charge accumulated during a first exposure period following a period for reading the first analog signal. A difference is acquired between a first difference and a second difference wherein the first difference is a difference between a third digital signal and the second digital signal, the third digital signal is a digital signal corresponding to the amount of charge cumulatively accumulated during the first exposure period and a following second exposure period, and the second difference is a difference between the second digital signal and the first digital signal. At least one of the first exposure period or the second exposure period includes a period during which the first light source is in the on-state.

Abstract: A vehicle includes upper frames, lower frames, a front frame, a rear frame, a pair of rear wheels, a drive motor to drive the pair of rear wheels, a battery to supply electric power to the drive motor, an endless power transmission to connect the drive motor with the pair of rear wheels, a pivot shaft attached to the rear frame, a swing arm supported pivotably by the pivot shaft and supporting the pair of rear wheels, a straddled seat at a higher position than the drive motor, and a bar handle provided at a higher position than the straddled seat. The drive motor is located farther forward than the swing arm.

Abstract: A vehicle includes upper frames, lower frames, a front frame, a rear frame, a pair of front wheels, a pair of rear wheels, a bar handle to steer the pair of front wheels, a drive motor to drive the pair of rear wheels, a battery to supply electric power to the drive motor, and a straddled seat provided at a higher position than the drive motor. The drive motor and the battery are located in a region surrounded by the upper frames, the lower frames, the front frame, and the rear frame in a side view of the vehicle.

Abstract: A vehicle includes an upper frame, a lower frame, a front frame, a rear frame, a pair of rear wheels, a drive motor to drive the pair of rear wheels, a battery supported by the upper frame and the lower frame to supply electric power to the drive motor, a straddled seat at a higher position than the drive motor, and a bar handle at a higher position than the straddled seat. The battery includes a battery lower portion and a battery upper portion. The battery upper portion includes a projection that overhangs in at least a horizontal direction with respect to the battery lower portion. At least a portion of the drive motor is below or directly below the projection.

Abstract: An imaging device includes: a photoelectric converter including first and second electrodes, and a photoelectric conversion layer located between the first electrode and the second electrode; a voltage supply circuit applying a bias voltage between the first electrode and the second electrode; an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor configured to output a signal corresponding to a potential of the second electrode; and a detection circuit configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range when the level detected by the detection circuit is greater than or equal to a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range when the level detected by the detection circuit is less than a second threshold value.

Abstract: A camera system includes: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer converting incident light into electric charge; voltage application circuitry; and a controller that derives a duty cycle corresponding to an attenuation ratio set for a first frame and that causes the voltage application circuitry to apply a pulse voltage having the duty cycle between the first electrode and the second electrode in the first frame.

Abstract: An imaging device including pixels each including: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the second electrode of each of the pixels being electrically connected to each other; and a transistor having a gate electrically connected to the first electrode. The imaging device further including voltage supply circuitry electrically connected to the second electrode, in which the voltage supply circuitry supplies a first voltage to the second electrode in an exposure period, the voltage supply circuitry supplies a second voltage to the second electrode in a non-exposure period, an a potential difference between the first electrode and the second electrode in the non-exposure period is less than a potential difference between the first electrode and the second electrode in the exposure period.

Abstract: An imaging device including a semiconductor substrate including a first surface that receives light from outside, and a second surface opposite to the first surface; a first transistor located on the second surface; and a photoelectric converter that faces the second surface and that receives light transmitted through the semiconductor substrate. The semiconductor substrate is a silicon substrate or a silicon compound substrate, and the photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that contains a material which absorbs light having a first wavelength longer than or equal to 1.1 ?m, and the material has a quantum nanostructure.