Patents by Inventor Yasuo Nakamura

Yasuo Nakamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170186998
    Abstract: A light emitting device having a structure in which oxygen and moisture are prevented from reaching light emitting elements, and a method of manufacturing the same, are provided. Further, the light emitting elements are sealed by using a small number of process steps, without enclosing a drying agent. The present invention has a top surface emission structure. A substrate on which the light emitting elements are formed is bonded to a transparent sealing substrate. The structure is one in which a transparent second sealing material covers the entire surface of a pixel region when bonding the two substrates, and a first sealing material (having a higher viscosity than the second sealing material), which contains a gap material (filler, fine particles, or the like) for protecting a gap between the two substrates, surrounds the pixel region. The two substrates are sealed by the first sealing material and the second sealing material.
    Type: Application
    Filed: March 16, 2017
    Publication date: June 29, 2017
    Inventors: Takeshi Nishi, Yasuo Nakamura
  • Publication number: 20170162700
    Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
    Type: Application
    Filed: February 15, 2017
    Publication date: June 8, 2017
    Inventors: Shunpei YAMAZAKI, Jun KOYAMA, Masahiro TAKAHASHI, Hideyuki KISHIDA, Akiharu MIYANAGA, Junpei SUGAO, Hideki UOCHI, Yasuo NAKAMURA
  • Patent number: 9623580
    Abstract: A recording material post-processing device includes: a recording material receiving unit that receives a recording material on which an image is formed from an image forming apparatus, the apparatus including an image forming unit that forms an image on a recording material to be transported, and a detection unit that detects a position of the recording material, on which the image is to be formed by the image forming unit, in a direction intersecting a transport direction of the recording material; a post-processing unit that performs post processing on the recording material received via the recording material receiving unit from the image forming apparatus; and a moving unit that moves the post-processing unit in the direction intersecting the transport direction of the recording material based on information related to the position of the recording material detected by the detection unit of the image forming apparatus.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: April 18, 2017
    Assignee: FUJI XEROX CO., LTD.
    Inventor: Yasuo Nakamura
  • Publication number: 20170104050
    Abstract: The present invention provides a light-emitting device comprising a first light-emitting element that emits red light, a second light-emitting element that emits green light, a third light-emitting element that emits blue light, and a color filter, where the color filter comprises a first coloring layer that selectively transmits red light, a second coloring layer that selectively transmits green light, and a third coloring layer that selectively transmits blue light, the first to third light-emitting elements respectively correspond to the first to third coloring layers, wherein each of the first to third light-emitting elements has a first electrode, an electroluminescent layer on the first electrode, and a second electrode on the electroluminescent layer, and wherein the electroluminescent layer includes a layer in contact with the second electrode, and a metal oxide or a benzoxazole derivative is included in the layer in contact with the second electrode.
    Type: Application
    Filed: December 22, 2016
    Publication date: April 13, 2017
    Inventors: Shunpei YAMAZAKI, Junichiro SAKATA, Hisao IKEDA, Yasuo NAKAMURA, Keiko SAITO
  • Patent number: 9601712
    Abstract: A light emitting device having a structure in which oxygen and moisture are prevented from reaching light emitting elements, and a method of manufacturing the same, are provided. Further, the light emitting elements are sealed by using a small number of process steps, without enclosing a drying agent. The present invention has a top surface emission structure. A substrate on which the light emitting elements are formed is bonded to a transparent sealing substrate. The structure is one in which a transparent second sealing material covers the entire surface of a pixel region when bonding the two substrates, and a first sealing material (having a higher viscosity than the second sealing material), which contains a gap material (filler, fine particles, or the like) for protecting a gap between the two substrates, surrounds the pixel region. The two substrates are sealed by the first sealing material and the second sealing material.
    Type: Grant
    Filed: December 15, 2014
    Date of Patent: March 21, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takeshi Nishi, Yasuo Nakamura
  • Patent number: 9601635
    Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
    Type: Grant
    Filed: October 28, 2015
    Date of Patent: March 21, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Masahiro Takahashi, Hideyuki Kishida, Akiharu Miyanaga, Junpei Sugao, Hideki Uochi, Yasuo Nakamura
  • Patent number: 9564561
    Abstract: The present invention provides a light-emitting device comprising a first light-emitting element that emits red light, a second light-emitting element that emits green light, a third light-emitting element that emits blue light, and a color filter, where the color filter comprises a first coloring layer that selectively transmits red light, a second coloring layer that selectively transmits green light, and a third coloring layer that selectively transmits blue light, the first to third light-emitting elements respectively correspond to the first to third coloring layers, wherein each of the first to third light-emitting elements has a first electrode, an electroluminescent layer on the first electrode, and a second electrode on the electroluminescent layer, and wherein the electroluminescent layer includes a layer in contact with the second electrode, and a metal oxide or a benzoxazole derivative is included in the layer in contact with the second electrode.
    Type: Grant
    Filed: May 19, 2015
    Date of Patent: February 7, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichiro Sakata, Hisao Ikeda, Yasuo Nakamura, Keiko Saito
  • Patent number: 9563165
    Abstract: An image forming apparatus feeds a recording sheet from a sheet feed roller, clamps the recording sheet between an image carrier and a transfer roller, transfers a toner image to the recording sheet from the image carrier while conveying the recording sheet, and fixes the transferred toner image on the recording sheet. Recording sheets are stacked on an elevating plate. An elevating plate swinging mechanism vertically swings the elevating plate. A rotation drive mechanism rotates the sheet feed roller in synchronism with the elevating plate swinging mechanism. A recording sheet detector detects a leading edge of each recording sheet fed from the sheet feed roller. A conveyance controller measures sheet feed time from starting a sheet feed operation to detecting the leading edge of the recording sheet. Based on the measured sheet feed time, the conveyance controller sets a sheet feed start timing of a next recording sheet.
    Type: Grant
    Filed: March 20, 2015
    Date of Patent: February 7, 2017
    Assignee: KONICA MINOLTA, INC.
    Inventor: Yasuo Nakamura
  • Publication number: 20170011698
    Abstract: An object is to provide a convenient display device which consumes sufficiently small amount of power and a method for driving such a display device. The display device can be in an off state with a still image displayed in a still image display mode in which a pixel electrode and a common electrode which are for applying a voltage to the display element are brought into a floating state so that a voltage applied to the display element is held, and a still image is displayed without further supply of a potential. The display device is put to an off state with a desired image displayed in the still image display mode, whereby the display device can have a higher level of security and can be more convenient.
    Type: Application
    Filed: September 22, 2016
    Publication date: January 12, 2017
    Inventors: Kenichi WAKIMOTO, Yasuo NAKAMURA
  • Publication number: 20160372608
    Abstract: To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.
    Type: Application
    Filed: September 1, 2016
    Publication date: December 22, 2016
    Inventors: Hidekazu MIYAIRI, Kengo AKIMOTO, Yasuo NAKAMURA
  • Patent number: 9454941
    Abstract: An object is to provide a convenient display device which consumes sufficiently small amount of power and a method for driving such a display device. The display device can be in an off state with a still image displayed in a still image display mode in which a pixel electrode and a common electrode which are for applying a voltage to the display element are brought into a floating state so that a voltage applied to the display element is held, and a still image is displayed without further supply of a potential. The display device is put to an off state with a desired image displayed in the still image display mode, whereby the display device can have a higher level of security and can be more convenient.
    Type: Grant
    Filed: March 2, 2015
    Date of Patent: September 27, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kenichi Wakimoto, Yasuo Nakamura
  • Patent number: 9450133
    Abstract: Thin film transistors including an oxide semiconductor containing indium, gallium, and zinc are easily arranged in a matrix over a large substrate and have small characteristic variations. With amplifier circuits and driver circuits of display elements which include the thin film transistors including an oxide semiconductor containing indium, gallium, and zinc with small characteristic variations, intensity distribution of light received by the photodiodes arranged in a matrix is converted into electrical signals with high reproducibility and output, and the display elements arranged in a matrix can be uniformly driven.
    Type: Grant
    Filed: November 24, 2009
    Date of Patent: September 20, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuo Nakamura, Yoshifumi Tanada
  • Patent number: 9437748
    Abstract: To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.
    Type: Grant
    Filed: November 19, 2015
    Date of Patent: September 6, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu Miyairi, Kengo Akimoto, Yasuo Nakamura
  • Publication number: 20160242722
    Abstract: In image data obtained, the radius and the ulna, and interosseous soft tissue between two bones are identified. A midpoint (Ygk) of the length of the interosseous soft tissue in a Y axis direction in (Xk) coordinates is determined. This midpoint is determined in multiple coordinates, and an approximate straight line of these midpoints is determined and set as a reference line. The foot of the perpendicular from the ulna styloid process to the reference line is set as a reference position. A region of interest is set in a position at a predetermined distance from the reference position along the reference line.
    Type: Application
    Filed: September 18, 2014
    Publication date: August 25, 2016
    Applicant: HITACHI ALOKA MEDICAL, LTD.
    Inventors: Ryutaro Adachi, Yasuo Nakamura, Naoto Kato
  • Patent number: 9397311
    Abstract: An object of the present invention is to reduce the thickness of a lighting device using an electroluminescent material. Another object of the present invention is to simplify the structure of a lighting device using an electroluminescent material to reduce cost. A light-emitting element having a stacked structure of a first electrode layer, an EL layer, and a second electrode layer is provided over a substrate having an opening in its center, and a first connecting portion and a second connecting portion for supplying electric power to the light-emitting element are provided in the center of the substrate (in the vicinity of the opening provided in the substrate).
    Type: Grant
    Filed: November 19, 2015
    Date of Patent: July 19, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasuyuki Arai, Yasuo Nakamura, Yukie Suzuki, Yoshitaka Moriya
  • Publication number: 20160079438
    Abstract: To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.
    Type: Application
    Filed: November 19, 2015
    Publication date: March 17, 2016
    Inventors: Hidekazu MIYAIRI, Kengo AKIMOTO, Yasuo NAKAMURA
  • Publication number: 20160079553
    Abstract: An object of the present invention is to reduce the thickness of a lighting device using an electroluminescent material. Another object of the present invention is to simplify the structure of a lighting device using an electroluminescent material to reduce cost. A light-emitting element having a stacked structure of a first electrode layer, an EL layer, and a second electrode layer is provided over a substrate having an opening in its center, and a first connecting portion and a second connecting portion for supplying electric power to the light-emitting element are provided in the center of the substrate (in the vicinity of the opening provided in the substrate).
    Type: Application
    Filed: November 19, 2015
    Publication date: March 17, 2016
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei YAMAZAKI, Yasuyuki ARAI, Yasuo NAKAMURA, Yukie SUZUKI, Yoshitaka MORIYA
  • Publication number: 20160049520
    Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
    Type: Application
    Filed: October 28, 2015
    Publication date: February 18, 2016
    Inventors: Shunpei YAMAZAKI, Jun KOYAMA, Masahiro TAKAHASHI, Hideyuki KISHIDA, Akiharu MIYANAGA, Junpei SUGAO, Hideki UOCHI, Yasuo NAKAMURA
  • Patent number: 9236456
    Abstract: To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.
    Type: Grant
    Filed: May 14, 2015
    Date of Patent: January 12, 2016
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hidekazu Miyairi, Kengo Akimoto, Yasuo Nakamura
  • Patent number: 9196809
    Abstract: An object of the present invention is to reduce the thickness of a lighting device using an electroluminescent material. Another object of the present invention is to simplify the structure of a lighting device using an electroluminescent material to reduce cost. A light-emitting element having a stacked structure of a first electrode layer, an EL layer, and a second electrode layer is provided over a substrate having an opening in its center, and a first connecting portion and a second connecting portion for supplying electric power to the light-emitting element are provided in the center of the substrate (in the vicinity of the opening provided in the substrate).
    Type: Grant
    Filed: March 11, 2013
    Date of Patent: November 24, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasuyuki Arai, Yasuo Nakamura, Yukie Suzuki, Yoshitaka Moriya