Patents by Inventor Yasuo Nakamura

Yasuo Nakamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9177855
    Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
    Type: Grant
    Filed: August 25, 2014
    Date of Patent: November 3, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Masahiro Takahashi, Hideyuki Kishida, Akiharu Miyanaga, Junpei Sugao, Hideki Uochi, Yasuo Nakamura
  • Patent number: 9166058
    Abstract: To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.
    Type: Grant
    Filed: October 31, 2014
    Date of Patent: October 20, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu Miyairi, Kengo Akimoto, Yasuo Nakamura
  • Publication number: 20150268611
    Abstract: An image forming apparatus feeds a recording sheet from a sheet feed roller, clamps the recording sheet between an image carrier and a transfer roller, transfers a toner image to the recording sheet from the image carrier while conveying the recording sheet, and fixes the transferred toner image on the recording sheet. Recording sheets are stacked on an elevating plate. An elevating plate swinging mechanism vertically swings the elevating plate. A rotation drive mechanism rotates the sheet feed roller in synchronism with the elevating plate swinging mechanism. A recording sheet detector detects a leading edge of each recording sheet fed from the sheet feed roller. A conveyance controller measures sheet feed time from starting a sheet feed operation to detecting the leading edge of the recording sheet. Based on the measured sheet feed time, the conveyance controller sets a sheet feed start timing of a next recording sheet.
    Type: Application
    Filed: March 20, 2015
    Publication date: September 24, 2015
    Inventor: Yasuo NAKAMURA
  • Publication number: 20150263251
    Abstract: The present invention provides a light-emitting device comprising a first light-emitting element that emits red light, a second light-emitting element that emits green light, a third light-emitting element that emits blue light, and a color filter, where the color filter comprises a first coloring layer that selectively transmits red light, a second coloring layer that selectively transmits green light, and a third coloring layer that selectively transmits blue light, the first to third light-emitting elements respectively correspond to the first to third coloring layers, wherein each of the first to third light-emitting elements has a first electrode, an electroluminescent layer on the first electrode, and a second electrode on the electroluminescent layer, and wherein the electroluminescent layer includes a layer in contact with the second electrode, and a metal oxide or a benzoxazole derivative is included in the layer in contact with the second electrode.
    Type: Application
    Filed: May 19, 2015
    Publication date: September 17, 2015
    Inventors: Shunpei YAMAZAKI, Junichiro SAKATA, Hisao IKEDA, Yasuo NAKAMURA, Keiko SAITO
  • Patent number: 9136492
    Abstract: To reduce the thickness of a lighting device which uses an electroluminescent material and to simplify the structure of a lighting device which uses an electroluminescent material, in the lighting device of the present invention: a terminal electrically connecting a light-emitting element included in the lighting device to the outside is formed over the same surface of a substrate as the light-emitting element; and the terminal is formed at the center of the substrate while the light-emitting element is stacked. In addition, the lighting device has a structure in which the light-emitting element is not easily deteriorated.
    Type: Grant
    Filed: September 19, 2014
    Date of Patent: September 15, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasuyuki Arai, Noriko Shibata, Yukie Suzuki, Yasuo Nakamura, Ikuko Kawamata, Yoshitaka Moriya
  • Publication number: 20150249147
    Abstract: To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.
    Type: Application
    Filed: May 14, 2015
    Publication date: September 3, 2015
    Inventors: Hidekazu MIYAIRI, Kengo AKIMOTO, Yasuo NAKAMURA
  • Publication number: 20150249116
    Abstract: An object is to provide a light-emitting module in which a light-emitting element suffering a short-circuit failure does not cause wasteful electric power consumption. Another object is to provide a light-emitting panel in which a light-emitting element suffering a short-circuit failure does not allow the reliability of an adjacent light-emitting element to lower. Focusing on heat generated by a light-emitting element suffering a short-circuit failure, provided is a structure in which electric power is supplied to a light-emitting element through a positive temperature coefficient thermistor (PTC thermistor) thermally coupled with the light-emitting element.
    Type: Application
    Filed: May 15, 2015
    Publication date: September 3, 2015
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masaaki Hiroki, Satoshi Seo, Yasuo Nakamura
  • Patent number: 9105251
    Abstract: An object is to provide a convenient display device which consumes sufficiently small amount of power and a method for driving such a display device. The display device can be in an off state with a still image displayed in a still image display mode in which a pixel electrode and a common electrode which are for applying a voltage to the display element are brought into a floating state so that a voltage applied to the display element is held, and a still image is displayed without further supply of a potential. The display device is put to an off state with a desired image displayed in the still image display mode, whereby the display device can have a higher level of security and can be more convenient.
    Type: Grant
    Filed: January 13, 2011
    Date of Patent: August 11, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kenichi Wakimoto, Yasuo Nakamura
  • Patent number: 9070894
    Abstract: The present invention provides a light-emitting device comprising a first light-emitting element that emits red light, a second light-emitting element that emits green light, a third light-emitting element that emits blue light, and a color filter, where the color filter comprises a first coloring layer that selectively transmits red light, a second coloring layer that selectively transmits green light, and a third coloring layer that selectively transmits blue light, the first to third light-emitting elements respectively correspond to the first to third coloring layers, wherein each of the first to third light-emitting elements has a first electrode, an electroluminescent layer on the first electrode, and a second electrode on the electroluminescent layer, and wherein the electroluminescent layer includes a layer in contact with the second electrode, and a metal oxide or a benzoxazole derivative is included in the layer in contact with the second electrode.
    Type: Grant
    Filed: March 12, 2012
    Date of Patent: June 30, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichiro Sakata, Hisao Ikeda, Yasuo Nakamura, Keiko Saito
  • Publication number: 20150179119
    Abstract: An object is to provide a convenient display device which consumes sufficiently small amount of power and a method for driving such a display device. The display device can be in an off state with a still image displayed in a still image display mode in which a pixel electrode and a common electrode which are for applying a voltage to the display element are brought into a floating state so that a voltage applied to the display element is held, and a still image is displayed without further supply of a potential. The display device is put to an off state with a desired image displayed in the still image display mode, whereby the display device can have a higher level of security and can be more convenient.
    Type: Application
    Filed: March 2, 2015
    Publication date: June 25, 2015
    Inventors: Kenichi WAKIMOTO, Yasuo NAKAMURA
  • Patent number: 9035337
    Abstract: An object is to provide a light-emitting module in which a light-emitting element suffering a short-circuit failure does not cause wasteful electric power consumption. Another object is to provide a light-emitting panel in which a light-emitting element suffering a short-circuit failure does not allow the reliability of an adjacent light-emitting element to lower. Focusing on heat generated by a light-emitting element suffering a short-circuit failure, provided is a structure in which electric power is supplied to a light-emitting element through a positive temperature coefficient thermistor (PTC thermistor) thermally coupled with the light-emitting element.
    Type: Grant
    Filed: February 13, 2012
    Date of Patent: May 19, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masaaki Hiroki, Satoshi Seo, Yasuo Nakamura
  • Patent number: 9031441
    Abstract: An image forming apparatus orientatable in either a first position or a second position, the second position being different from the first position in inclination with respect to a horizontal plane, including a fixing unit including a fixing roller and a pressurizing roller, pressing the pressurizing roller against a surface of the fixing roller to form a fixing nip, and thermally fixing a toner image on a recording sheet passing through the fixing nip; at least one temperature sensor detecting surface temperature of the fixing roller without contact with the surface; a heater heating the fixing roller; and a controller controlling the heater according to the surface temperature, thereby controlling the surface temperature, wherein a heat sensitive portion of the temperature sensor is located above a horizontal plane passing through a rotational axis of the fixing roller regardless of the orientation of the image forming apparatus.
    Type: Grant
    Filed: April 23, 2013
    Date of Patent: May 12, 2015
    Assignee: Konica Minolta, Inc.
    Inventors: Koji Soda, Yasuo Nakamura, Masahide Wakayama, Yasuaki Tomoda
  • Publication number: 20150097177
    Abstract: A light emitting device having a structure in which oxygen and moisture are prevented from reaching light emitting elements, and a method of manufacturing the same, are provided. Further, the light emitting elements are sealed by using a small number of process steps, without enclosing a drying agent. The present invention has a top surface emission structure. A substrate on which the light emitting elements are formed is bonded to a transparent sealing substrate. The structure is one in which a transparent second sealing material covers the entire surface of a pixel region when bonding the two substrates, and a first sealing material (having a higher viscosity than the second sealing material), which contains a gap material (filler, fine particles, or the like) for protecting a gap between the two substrates, surrounds the pixel region. The two substrates are sealed by the first sealing material and the second sealing material.
    Type: Application
    Filed: December 15, 2014
    Publication date: April 9, 2015
    Inventors: Takeshi Nishi, Yasuo Nakamura
  • Publication number: 20150048371
    Abstract: To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.
    Type: Application
    Filed: October 31, 2014
    Publication date: February 19, 2015
    Inventors: Hidekazu MIYAIRI, Kengo AKIMOTO, Yasuo NAKAMURA
  • Patent number: 8946703
    Abstract: To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.
    Type: Grant
    Filed: April 24, 2014
    Date of Patent: February 3, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu Miyairi, Kengo Akimoto, Yasuo Nakamura
  • Publication number: 20150008421
    Abstract: To reduce the thickness of a lighting device which uses an electroluminescent material and to simplify the structure of a lighting device which uses an electroluminescent material, in the lighting device of the present invention: a terminal electrically connecting a light-emitting element included in the lighting device to the outside is formed over the same surface of a substrate as the light-emitting element; and the terminal is formed at the center of the substrate while the light-emitting element is stacked. In addition, the lighting device has a structure in which the light-emitting element is not easily deteriorated.
    Type: Application
    Filed: September 19, 2014
    Publication date: January 8, 2015
    Inventors: Shunpei Yamazaki, Yasuyuki Arai, Noiko Shibata, Yukie Suzuki, Yasuo Nakamura, Ikuko Kawamata, Yoshitaka Moriya
  • Patent number: 8927979
    Abstract: A light emitting device having a structure in which oxygen and moisture are prevented from reaching light emitting elements, and a method of manufacturing the same, are provided. Further, the light emitting elements are sealed by using a small number of process steps, without enclosing a drying agent. The present invention has a top surface emission structure. A substrate on which the light emitting elements are formed is bonded to a transparent sealing substrate. The structure is one in which a transparent second sealing material covers the entire surface of a pixel region when bonding the two substrates, and a first sealing material (having a higher viscosity than the second sealing material), which contains a gap material (filler, fine particles, or the like) for protecting a gap between the two substrates, surrounds the pixel region. The two substrates are sealed by the first sealing material and the second sealing material.
    Type: Grant
    Filed: May 31, 2013
    Date of Patent: January 6, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takeshi Nishi, Yasuo Nakamura
  • Publication number: 20140370706
    Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
    Type: Application
    Filed: August 25, 2014
    Publication date: December 18, 2014
    Inventors: Shunpei Yamazaki, Jun Koyama, Masahiro Takahashi, Hideyuki Kishida, Akiharu Miyanaga, Junpei Sugao, Hideki Uochi, Yasuo Nakamura
  • Publication number: 20140357560
    Abstract: [Object] To provide a method of treating osteoporosis by PTH that has excellent safety and high efficacy. To provide a method for inhibiting/preventing bone fractures by PTH that has excellent safety. And to provide a drug to do this. [Means of Achievement] A drug containing PTH as the active ingredient, characterized in that a unit dose of PTH of 100 to 200 units is administered weekly in the above method.
    Type: Application
    Filed: July 14, 2014
    Publication date: December 4, 2014
    Inventors: Shinichiro SHIRAE, Yasuo NAKAMURA, Yuiko OYA, Yoshihide NOZAKI, Nobuyuki KOBAYASHI, Tatsuhiko KURODA, Hiroki KATO, Masahi SERADA, Kazuyoshi HORI
  • Patent number: 8866171
    Abstract: To provide a light-emitting element or a light-emitting device in which power is not consumed wastefully even if a short-circuit failure occurs. The present invention focuses on heat generated due to a short-circuit failure which occurs in a light-emitting element. A fusible alloy which is melted at temperature T2 by heat generated due to the short-circuit failure when the short-circuit failure occurs is used for at least one of a pair of electrodes in a light-emitting element, and a layer containing an organic composition which is melted at temperature T1 is formed on a surface of the electrode opposite to a surface facing the other electrode. The present inventors have reached a structure in which the temperature T2 is lower than temperature T3 at which the light-emitting element is damaged and the temperature T1 is lower than the temperature T2, and this structure can achieve the objects.
    Type: Grant
    Filed: March 6, 2012
    Date of Patent: October 21, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuo Nakamura, Satoshi Seo, Masaaki Hiroki