Abstract: The present invention provides a lightweight, thin light-emitting device having a new structure which has a plurality of display screens. Further, the invention provides a dual emission type display device which can perform a pure black display and can achieve high contrast. According to the invention, at least, both electrodes of a light-emitting element (an anode and a cathode of a light-emitting element) are highly light-transmitting at the same level, and a polarizing plate or a circularly polarizing plate is provided, thereby conducting a pure black display that is a state of no light-emission and enhancing the contrast. Moreover, unevenness of color tones in displays of the both sides, which is a problem of a full-color dual emission type display device structure, can be solved according to the invention.

Abstract: To provide an evaporation container and a vapor deposition apparatus in which vapor deposition can be performed stably with use of an evaporation container formed of an inexpensive material being easily processed without clogging the material. The side surface of a lid for the evaporation container is provided with an accordion-shaped structure. The lid of the evaporation container is made larger than an opening of an evaporation source such that the lid is directly contacted to a heating portion. According to the structure, the periphery of the opening for the lid is not easily cooled downs and therefore the variation in temperature between the body and the lid of the container is hardly generated. Consequently, an evaporated material hardly clog at the opening, vapor deposition can be stably performed for a long time, thereby increasing productivity.

Abstract: Thin film transistors including an oxide semiconductor containing indium, gallium, and zinc are easily arranged in a matrix over a large substrate and have small characteristic variations. With amplifier circuits and driver circuits of display elements which include the thin film transistors including an oxide semiconductor containing indium, gallium, and zinc with small characteristic variations, intensity distribution of light received by the photodiodes arranged in a matrix is converted into electrical signals with high reproducibility and output, and the display elements arranged in a matrix can be uniformly driven.

Abstract: A light emitting device having a structure in which oxygen and moisture are prevented from reaching light emitting elements, and a method of manufacturing the same, are provided. Further, the light emitting elements are sealed by using a small number of process steps, without enclosing a drying agent. The present invention has a top surface emission structure. A substrate on which the light emitting elements are formed is bonded to a transparent sealing substrate. The structure is one in which a transparent second sealing material covers the entire surface of a pixel region when bonding the two substrates, and a first sealing material (having a higher viscosity than the second sealing material), which contains a gap material (filler, fine particles, or the like) for protecting a gap between the two substrates, surrounds the pixel region. The two substrates are sealed by the first sealing material and the second sealing material.

Abstract: To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.

Abstract: In the present invention, an electron injection composition for a light-emitting element, comprising a pyridine derivative represented by general formula 1 and at least one of an alkali metal, an alkali earth metal, and a transition metal, is used to form an electron injection layer in a portion of a layer including luminescent material in a light-emitting element, and it is also an object of the present invention to provide, by using the composition, a light-emitting element that has more superior characteristics and a longer lifetime as compared to conventional ones, where each of X1 and X2 represents: (where each of R1 to R8 represents hydrogen, halogen, a cyano group, an alkyl group having 1 to 10 carbon atoms, a haloalkyl group having 1 to 10 carbon atoms, an alkoxyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group).

Abstract: An imaging apparatus is provided. The apparatus includes a sound collecting unit configured to collect speech in a monitored environment, a shooting unit configured to shoot video in the monitored environment, a detection unit configured to detect a change in a state of the monitored environment based upon a change in data acquired by the sound collecting unit, the shooting unit and a sensor for measuring the state of the monitored environment, a recognition unit configured to recognize the change in state with regard to speech data acquired by the sound collecting unit and video data acquired by the shooting unit, and a control unit configured to start up the recognition unit and select a recognition database, which is used by the recognition unit, based upon result of detection by the detection unit.

Abstract: It is an object of the present invention to provide a method for fabricating a light emitting device, in which brightness gradient due to potential drop of a counter electrode can be prevented from being observed and an auxiliary electrode can be formed without increasing the number of steps, even when the precision of a light emitting device is improved. It is another object of the invention to provide a light emitting device fabricated according to the method. The light emitting device has a light emitting element and an auxiliary electrode in each pixel. The light emitting element includes a first electrode, a second electrode, an electroluminescent layer provided between the first and the second electrodes. Further, the first electrode is overlapped with the electroluminescent layer and the second electrode formed over an insulating film by means of a first opening formed in the insulating film.

Abstract: A display device capable of displaying on both screens and switching between vertical and horizontal display, and a driving method thereof. Each pixel comprises a first region including a first light emitting element, and a second region including a second light emitting element. The first region has a bottom emission structure whereas the second region has a top emission structure. The display device comprises a source signal line driver circuit for driving the pixel, a first gate signal line driver circuit having a scan direction perpendicular to that of the source signal line driver circuit, and a second gate signal line driver circuit having a scan direction perpendicular to that of the first gate signal line driver circuit. In a normal display, the first gate signal line driver circuit performs perpendicular scanning, and when switching between vertical and horizontal display, the second gate signal line driver circuit performs perpendicular scanning.

Abstract: It is an object of the present invention to provide a method for fabricating a light emitting device, in which brightness gradient due to potential drop of a counter electrode can be prevented from being observed and an auxiliary electrode can be formed without increasing the number of steps, even when the precision of a light emitting device is improved. It is another object of the invention to provide a light emitting device fabricated according to the method. The light emitting device has a light emitting element and an auxiliary electrode in each pixel. The light emitting element includes a first electrode, a second electrode, an electroluminescent layer provided between the first and the second electrodes. Further, the first electrode is overlapped with the electroluminescent layer and the second electrode formed over an insulating film by means of a first opening formed in the insulating film.

Abstract: It is an object of the present invention to provide a light-emitting device that is high in color purity of light and is high in light extraction efficiency, where sputtering is used to form an electrode on an electroluminescent layer without damage to a layer including an organic material.

Abstract: A chelate complex having as its central metal tungsten which is an inexpensive metal and which is a heavy atom is applied to an organic light emitting element, thereby obtaining an organic light emitting element capable of converting the triplet excitation energy into light emission. By applying the organic light emitting element using this metal complex, an inexpensive light emitting device which is bright but consumes little power can be provided as well as an electric appliance using the light emitting device.

Abstract: There is provided a reaction vessel whereby silicon produced can be smoothly recovered dropwise without excessive thermal load on constitutional parts of the reaction vessel, a silicon deposition feedstock gas can be reacted efficiently even when the reaction vessel is scaled up to industrial large-scale equipment, generation of silicon fine powder and silane oligomers can be suppressed, and industrial silicon production can be performed over extended periods. The tubular reaction vessel comprises a longitudinally-extending wall with a space thereinside, wherein a silicon deposition feedstock gas inflow opening and a deposited silicon discharge opening are provided at an upper portion and a lower end portion respectively, and a flow resistance-increasing region is created on a wall surface of the tubular reaction vessel that is contacted with a feedstock gas. The flow resistance-increasing region is at least one of protrudent, concave and sloped regions.

Abstract: It is an object of the present invention to provide a light-emitting device that is high in color purity of light and is high in light extraction efficiency, where sputtering is used to form an electrode on an electroluminescent layer without damage to a layer including an organic material.

Abstract: In the present invention, an electron injection composition for a light-emitting element, comprising a benzoxazole derivative represented by general formula 1 and at least one of an alkali metal, an alkali earth metal, and a transition metal, is used to form an electron injection layer in a portion of a layer including luminescent material in a light-emitting element, and it is an object of the present invention to provide, by using the composition, a light-emitting element that has more superior characteristics and a longer lifetime as compared to conventional ones. wherein Ar represents an aryl group, and each of R1 to R4 represents hydrogen, halogen, a cyano group, an alkyl group having 1 to 10 carbon atoms, a haloalkyl group having 1 to 10 carbon atoms, an alkoxyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group.

Abstract: It is an object to provide a novel phosphor which can be manufactured without using a defect formation step which is difficult to control, and a manufacturing method thereof. The phosphor has a structure including a phosphor host material and an emission excitation material which is dispersed in a marbled pattern in the phosphor host material while being in contact with it. The emission excitation material is selected from metal oxide, a semiconductor formed of an element belonging to Group 2B (Group 12) of the periodic table and an element belonging to Group 6B (Group 16) of the periodic table, or an element formed of an element belonging to Group 3B (Group 13) of the periodic table and an element belonging to Group 5B (Group 15) of the periodic table. The phosphor host material and the emission excitation material are mixed and baked with pressure to be joined.

Abstract: Disclosed is an apparatus-information indicator, which includes an indication surface, an underlying segment formed on the indication surface by a first dot pattern, and a character area formed on the underlying segment by a second dot pattern different from the first dot pattern to indicate given apparatus information. Respective colors of the underlying segment and the character area are substantially equal in hue, and substantially different in lightness.

Abstract: A novel phosphor material which can be manufactured without utilizing a fault formation process which is difficult to be controlled. The phosphor material has a eutectic structure formed of a base material that is a semiconductor formed of a Group 2 element and a Group 6 element, a semiconductor formed of a Group 3 element and a Group 5 element, or a ternary phosphor formed of an alkaline earth metal, a Group 3 element, and a Group 6 element, and a solid solution material including a transition metal. The phosphor material is suited for an EL element because of less variation of characteristic since defect formation process in which stress is applied externally to form a defect inside of a phosphor material is not needed.

Abstract: A silicon production reactor including a reaction vessel and heating element, the reaction vessel has a vertically extending wall and a space surrounded by the wall, the heating element being capable of heating at least a part, including lower end portion, of the wall's surface facing the space to a temperature of not lower than the melting point of silicon, the silicon production reactor being adapted to flow raw gas for silicon deposition from an upper part of the space of the reaction vessel toward a lower part thereof, characterized in that the space of the reaction vessel is of slit form in cross-sectional view. This silicon production reactor is capable of attaining improvement with respect to problems encountered at apparatus scale-up, such as decrease of reactivity of raw gas and generation of by-products, thereby accomplishing a striking enhancement of production efficiency.

Abstract: It is an object of the present invention to provide an electron injecting composition which is excellent in light-transmitting property, safety and electron injecting property, and a light emitting element and a light emitting device using the electron injecting composition. The electron injecting composition according to the present invention includes a benzoxazole derivative indicated by a general formula (1) and an electron donating organic compound; (where Ar is an aryl group, each of R1 to R4 represents hydrogen, halogen, a cyano group, an alkyl group having 1 to 10 carbon atoms, a haloalkyl group having 1 to 10 carbon atoms, an alkoxyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group).