Patents by Inventor Yasuo Nakamura

Yasuo Nakamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110084268
    Abstract: It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.
    Type: Application
    Filed: October 5, 2010
    Publication date: April 14, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Jun Koyama, Masahiro Takahashi, Hideyuki Kishida, Akiharu Miyanaga, Yasuo Nakamura, Junpei Sugao, Hideki Uochi
  • Publication number: 20110084337
    Abstract: As for a semiconductor device which is typified by a display device, it is an object to provide a highly reliable semiconductor device to which a large-sized or high-definition screen is applicable and which has high display quality and operates stably. By using a conductive layer including Cu as a long lead wiring, an increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
    Type: Application
    Filed: October 5, 2010
    Publication date: April 14, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Jun Koyama, Hideki Uochi, Yasuo Nakamura, Junpei Sugao
  • Publication number: 20110084267
    Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
    Type: Application
    Filed: October 5, 2010
    Publication date: April 14, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Jun Koyama, Masahiro Takahashi, Hideyuki Kishida, Akiharu Miyanaga, Junpei Sugao, Hideki Uochi, Yasuo Nakamura
  • Publication number: 20100252825
    Abstract: The present invention provides a lightweight, thin light-emitting device having a new structure which has a plurality of display screens. Further, the invention provides a dual emission type display device which can perform a pure black display and can achieve high contrast. According to the invention, at least, both electrodes of a light-emitting element (an anode and a cathode of a light-emitting element) are highly light-transmitting at the same level, and a polarizing plate or a circularly polarizing plate is provided, thereby conducting a pure black display that is a state of no light-emission and enhancing the contrast. Moreover, unevenness of color tones in displays of the both sides, which is a problem of a full-color dual emission type display device structure, can be solved according to the invention.
    Type: Application
    Filed: June 3, 2010
    Publication date: October 7, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Yoshiharu Hirakata, Tetsuji Ishitani, Yasuo Nakamura, Hisao Ikeda, Hiroki Ohara
  • Publication number: 20100237373
    Abstract: An object of the present invention is to reduce the thickness of a lighting device using an electroluminescent material. Another object of the present invention is to simplify the structure of a lighting device using an electroluminescent material to reduce cost. A light-emitting element having a stacked structure of a first electrode layer, an EL layer, and a second electrode layer is provided over a substrate having an opening in its center, and a first connecting portion and a second connecting portion for supplying electric power to the light-emitting element are provided in the center of the substrate (in the vicinity of the opening provided in the substrate).
    Type: Application
    Filed: March 12, 2010
    Publication date: September 23, 2010
    Inventors: Shunpei Yamazaki, Yasuyuki Arai, Yasuo Nakamura, Yukie Suzuki, Yoshitaka Moriya
  • Publication number: 20100237774
    Abstract: To reduce the thickness of a lighting device which uses an electroluminescent material and to simplify the structure of a lighting device which uses an electroluminescent material, in the lighting device of the present invention: a terminal electrically connecting a light-emitting element included in the lighting device to the outside is formed over the same surface of a substrate as the light-emitting element; and the terminal is formed at the center of the substrate while the light-emitting element is stacked. In addition, the lighting device has a structure in which the light-emitting element is not easily deteriorated.
    Type: Application
    Filed: March 12, 2010
    Publication date: September 23, 2010
    Inventors: Shunpei Yamazaki, Yasuyuki Arai, Noriko Shibata, Yukie Suzuki, Yasuo Nakamura, Ikuko Kawamata, Yoshitaka Moriya
  • Patent number: 7772596
    Abstract: It is an object of the present invention to provide a light-emitting element and a light-emitting device, in which a plurality of electroluminescent layers are stacked with a charge generation layer interposed therebetween between a pair of electrodes that are opposed to each other, and for which the charge generation layer can be formed on the electroluminescent layer by sputtering without damaging the electroluminescent layer. A material that is not easily etched is used for, of the electroluminescent layer, the closest layer to the charge generation layer formed by sputtering on the electroluminescent layer. Specifically, a benzoxazole derivative or a pyridine derivative is used.
    Type: Grant
    Filed: April 21, 2005
    Date of Patent: August 10, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd
    Inventors: Yasuo Nakamura, Hisao Ikeda, Junichiro Sakata
  • Publication number: 20100173555
    Abstract: A light emitting device having a structure in which oxygen and moisture are prevented from reaching light emitting elements, and a method of manufacturing the same, are provided. Further, the light emitting elements are sealed by using a small number of process steps, without enclosing a drying agent. The present invention has a top surface emission structure. A substrate on which the light emitting elements are formed is bonded to a transparent sealing substrate. The structure is one in which a transparent second sealing material covers the entire surface of a pixel region when bonding the two substrates, and a first sealing material (having a higher viscosity than the second sealing material), which contains a gap material (filler, fine particles, or the like) for protecting a gap between the two substrates, surrounds the pixel region. The two substrates are sealed by the first sealing material and the second sealing material.
    Type: Application
    Filed: March 18, 2010
    Publication date: July 8, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Takeshi Nishi, Yasuo Nakamura
  • Patent number: 7750552
    Abstract: The present invention provides a lightweight, thin light-emitting device having a new structure which has a plurality of display screens. Further, the invention provides a dual emission type display device which can perform a pure black display and can achieve high contrast. According to the invention, at least, both electrodes of a light-emitting element (an anode and a cathode of a light-emitting element) are highly light-transmitting at the same level, and a polarizing plate or a circularly polarizing plate is provided, thereby conducting a pure black display that is a state of no light-emission and enhancing the contrast. Moreover, unevenness of color tones in displays of the both sides, which is a problem of a full-color dual emission type display device structure, can be solved according to the invention.
    Type: Grant
    Filed: December 2, 2004
    Date of Patent: July 6, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yoshiharu Hirakata, Tetsuji Ishitani, Yasuo Nakamura, Hisao Ikeda, Hiroki Ohara
  • Publication number: 20100147220
    Abstract: To provide an evaporation container and a vapor deposition apparatus in which vapor deposition can be performed stably with use of an evaporation container formed of an inexpensive material being easily processed without clogging the material. The side surface of a lid for the evaporation container is provided with an accordion-shaped structure. The lid of the evaporation container is made larger than an opening of an evaporation source such that the lid is directly contacted to a heating portion. According to the structure, the periphery of the opening for the lid is not easily cooled downs and therefore the variation in temperature between the body and the lid of the container is hardly generated. Consequently, an evaporated material hardly clog at the opening, vapor deposition can be stably performed for a long time, thereby increasing productivity.
    Type: Application
    Filed: February 25, 2010
    Publication date: June 17, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Junichiro SAKATA, Yasuo NAKAMURA, Yutaka OKAZAKI
  • Publication number: 20100134735
    Abstract: Thin film transistors including an oxide semiconductor containing indium, gallium, and zinc are easily arranged in a matrix over a large substrate and have small characteristic variations. With amplifier circuits and driver circuits of display elements which include the thin film transistors including an oxide semiconductor containing indium, gallium, and zinc with small characteristic variations, intensity distribution of light received by the photodiodes arranged in a matrix is converted into electrical signals with high reproducibility and output, and the display elements arranged in a matrix can be uniformly driven.
    Type: Application
    Filed: November 24, 2009
    Publication date: June 3, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yasuo NAKAMURA, Yoshifumi TANADA
  • Patent number: 7700958
    Abstract: A light emitting device having a structure in which oxygen and moisture are prevented from reaching light emitting elements, and a method of manufacturing the same, are provided. Further, the light emitting elements are sealed by using a small number of process steps, without enclosing a drying agent. The present invention has a top surface emission structure. A substrate on which the light emitting elements are formed is bonded to a transparent sealing substrate. The structure is one in which a transparent second sealing material covers the entire surface of a pixel region when bonding the two substrates, and a first sealing material (having a higher viscosity than the second sealing material), which contains a gap material (filler, fine particles, or the like) for protecting a gap between the two substrates, surrounds the pixel region. The two substrates are sealed by the first sealing material and the second sealing material.
    Type: Grant
    Filed: June 20, 2003
    Date of Patent: April 20, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takeshi Nishi, Yasuo Nakamura
  • Publication number: 20100035379
    Abstract: To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.
    Type: Application
    Filed: August 5, 2009
    Publication date: February 11, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hidekazu MIYAIRI, Kengo AKIMOTO, Yasuo NAKAMURA
  • Patent number: 7659556
    Abstract: In the present invention, an electron injection composition for a light-emitting element, comprising a pyridine derivative represented by general formula 1 and at least one of an alkali metal, an alkali earth metal, and a transition metal, is used to form an electron injection layer in a portion of a layer including luminescent material in a light-emitting element, and it is also an object of the present invention to provide, by using the composition, a light-emitting element that has more superior characteristics and a longer lifetime as compared to conventional ones, where each of X1 and X2 represents: (where each of R1 to R8 represents hydrogen, halogen, a cyano group, an alkyl group having 1 to 10 carbon atoms, a haloalkyl group having 1 to 10 carbon atoms, an alkoxyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group).
    Type: Grant
    Filed: March 5, 2007
    Date of Patent: February 9, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Yasuo Nakamura
  • Publication number: 20090326954
    Abstract: An imaging apparatus is provided. The apparatus includes a sound collecting unit configured to collect speech in a monitored environment, a shooting unit configured to shoot video in the monitored environment, a detection unit configured to detect a change in a state of the monitored environment based upon a change in data acquired by the sound collecting unit, the shooting unit and a sensor for measuring the state of the monitored environment, a recognition unit configured to recognize the change in state with regard to speech data acquired by the sound collecting unit and video data acquired by the shooting unit, and a control unit configured to start up the recognition unit and select a recognition database, which is used by the recognition unit, based upon result of detection by the detection unit.
    Type: Application
    Filed: June 23, 2009
    Publication date: December 31, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Tomoaki Kawai, Yasuo Nakamura, Shinji Shiraga
  • Publication number: 20090286445
    Abstract: It is an object of the present invention to provide a method for fabricating a light emitting device, in which brightness gradient due to potential drop of a counter electrode can be prevented from being observed and an auxiliary electrode can be formed without increasing the number of steps, even when the precision of a light emitting device is improved. It is another object of the invention to provide a light emitting device fabricated according to the method. The light emitting device has a light emitting element and an auxiliary electrode in each pixel. The light emitting element includes a first electrode, a second electrode, an electroluminescent layer provided between the first and the second electrodes. Further, the first electrode is overlapped with the electroluminescent layer and the second electrode formed over an insulating film by means of a first opening formed in the insulating film.
    Type: Application
    Filed: July 23, 2009
    Publication date: November 19, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Ritsuko Nagao, Yasuo Nakamura
  • Patent number: 7592984
    Abstract: A display device capable of displaying on both screens and switching between vertical and horizontal display, and a driving method thereof. Each pixel comprises a first region including a first light emitting element, and a second region including a second light emitting element. The first region has a bottom emission structure whereas the second region has a top emission structure. The display device comprises a source signal line driver circuit for driving the pixel, a first gate signal line driver circuit having a scan direction perpendicular to that of the source signal line driver circuit, and a second gate signal line driver circuit having a scan direction perpendicular to that of the first gate signal line driver circuit. In a normal display, the first gate signal line driver circuit performs perpendicular scanning, and when switching between vertical and horizontal display, the second gate signal line driver circuit performs perpendicular scanning.
    Type: Grant
    Filed: November 16, 2007
    Date of Patent: September 22, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Jun Koyama, Yu Yamazaki, Yoshifumi Tanada, Satoshi Seo, Takeshi Nishi, Yasuo Nakamura, Shunpei Yamazaki
  • Patent number: 7579774
    Abstract: It is an object of the present invention to provide a method for fabricating a light emitting device, in which brightness gradient due to potential drop of a counter electrode can be prevented from being observed and an auxiliary electrode can be formed without increasing the number of steps, even when the precision of a light emitting device is improved. It is another object of the invention to provide a light emitting device fabricated according to the method. The light emitting device has a light emitting element and an auxiliary electrode in each pixel. The light emitting element includes a first electrode, a second electrode, an electroluminescent layer provided between the first and the second electrodes. Further, the first electrode is overlapped with the electroluminescent layer and the second electrode formed over an insulating film by means of a first opening formed in the insulating film.
    Type: Grant
    Filed: May 8, 2007
    Date of Patent: August 25, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Ritsuko Nagao, Yasuo Nakamura
  • Publication number: 20090206726
    Abstract: It is an object of the present invention to provide a light-emitting device that is high in color purity of light and is high in light extraction efficiency, where sputtering is used to form an electrode on an electroluminescent layer without damage to a layer including an organic material.
    Type: Application
    Filed: May 4, 2009
    Publication date: August 20, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Junichiro Sakata, Hisao Ikeda, Yasuo Nakamura, Keiko Saito
  • Patent number: 7560177
    Abstract: A chelate complex having as its central metal tungsten which is an inexpensive metal and which is a heavy atom is applied to an organic light emitting element, thereby obtaining an organic light emitting element capable of converting the triplet excitation energy into light emission. By applying the organic light emitting element using this metal complex, an inexpensive light emitting device which is bright but consumes little power can be provided as well as an electric appliance using the light emitting device.
    Type: Grant
    Filed: August 21, 2006
    Date of Patent: July 14, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Atsushi Tokuda, Yasuo Nakamura