Abstract: A thermosensitive part sensing temperature; a temperature sensor for measurement provided in the unit and measuring temperature by contacting the unit with a body to be measured; a temperature detecting part detecting, from when the unit contacts the body, the time when the sensor senses a difference from an initial temperature of the sensor, and a measured temperature of the sensor at that time, and detecting, from when the difference is sensed, a time after a certain length of time and a measured temperature of the sensor at that time; an estimating part estimating, from the time when the difference is sensed and a time after a certain length of time, the time when the thermosensitive part contacts the body, and the measured temperature at that time; and a heat conduction analyzing part estimating the measured temperature based on output information from the temperature detecting part and the estimating part.

Abstract: A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

Abstract: There is provided a method of manufacturing an imaging device including a plurality of imaging elements in an imaging area, where each imaging element includes a photoelectric conversion unit in a substrate and a wire grid polarizer arranged at a light-incident side of the photoelectric conversion unit. The method generally includes forming the wire grid polarizer that includes a plurality of stacked strip-shaped portions, where each of the plurality of stacked strip-shaped portions includes a portion of a light-reflecting layer and a portion of a light-absorbing layer. The light-reflecting layer may include a first electrical conducting material that is electrically connected to at least one of the substrate or the photoelectric conversion unit. The light-absorbing layer may include a second electrical conducting material, where at least a portion of the light-absorbing layer is in contact with the light-reflecting layer.

Abstract: Imaging devices and electronic apparatuses incorporating imaging devices or image pick-up elements are provided. An imaging device as disclosed can include a substrate, a first opto-electronic converter having a first area formed in the substrate, and a second opto-electronic converter having a second area formed in the substrate. The first area is larger than the second area. In addition, a light blocking wall can extend from a first surface of the substrate such that at least a portion of the light blocking wall is between the first opto-electronic converter and the second opto-electronic converter.

Abstract: A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

Abstract: Imaging devices and electronic apparatuses incorporating imaging devices or image pick-up elements are provided. An imaging device as disclosed can include a substrate, a first opto-electronic converter having a first area formed in the substrate, and a second opto-electronic converter having a second area formed in the substrate. The first area is larger than the second area. In addition, a light blocking wall can extend from a first surface of the substrate such that at least a portion of the light blocking wall is between the first opto-electronic converter and the second opto-electronic converter.

Abstract: A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

Abstract: There is provided a method of manufacturing an imaging device including a plurality of imaging elements in an imaging area, where each imaging element includes a photoelectric conversion unit in a substrate and a wire grid polarizer arranged at a light-incident side of the photoelectric conversion unit. The method generally includes forming the wire grid polarizer that includes a plurality of stacked strip-shaped portions, where each of the plurality of stacked strip-shaped portions includes a portion of a light-reflecting layer and a portion of a light-absorbing layer. The light-reflecting layer may include a first electrical conducting material that is electrically connected to at least one of the substrate or the photoelectric conversion unit. The light-absorbing layer may include a second electrical conducting material, where at least a portion of the light-absorbing layer is in contact with the light-reflecting layer.

Abstract: There is provided a method of manufacturing an imaging device including a plurality of imaging elements in an imaging area, where each imaging element includes a photoelectric conversion unit in a substrate and a wire grid polarizer arranged at a light-incident side of the photoelectric conversion unit. The method generally includes forming the wire grid polarizer that includes a plurality of stacked strip-shaped portions, where each of the plurality of stacked strip-shaped portions includes a portion of a light-reflecting layer and a portion of a light-absorbing layer. The light-reflecting layer may include a first electrical conducting material that is electrically connected to at least one of the substrate or the photoelectric conversion unit. The light-absorbing layer may include a second electrical conducting material, where at least a portion of the light-absorbing layer is in contact with the light-reflecting layer.

Abstract: There is provided an imaging element including a photoelectric conversion unit formed in a substrate and a wire grid polarizer disposed at a light-incident side of the photoelectric conversion unit. In addition, the wire grid polarizer includes a plurality of strip-shaped portions, where air gaps exist between adjacent strip-shaped portions. Further, a protective layer is formed on the wire grid polarizer.

Abstract: Imaging devices and electronic apparatuses incorporating imaging devices or image pick-up elements are provided. An imaging device as disclosed can include a substrate, a first opto-electronic converter having a first area formed in the substrate, and a second opto-electronic converter having a second area formed in the substrate. The first area is larger than the second area. In addition, a light blocking wall can extend from a first surface of the substrate such that at least a portion of the light blocking wall is between the first opto-electronic converter and the second opto-electronic converter.

Abstract: An image processing apparatus includes a first image processing circuit and a second image processing circuit connected to the first image processing circuit via a first signal line and a second signal line. The first image processing circuit outputs OSD image data representing an OSD image in the form of n sets of divided OSD image data that are generated by dividing the OSD image data by n to the second image processing circuit via the first signal line and outputs position information of the divided OSD image data to the second image processing circuit via the second signal line. The second image processing circuit outputs, based on first input image data, the n sets of divided OSD image data, and the position information, combined image data representing a combined image formed of the first input image on which the OSD image is superimposed.

Abstract: Imaging devices and electronic apparatuses incorporating imaging devices or image pick-up elements are provided. An imaging device as disclosed can include a substrate, a first opto-electronic converter having a first area formed in the substrate, and a second opto-electronic converter having a second area formed in the substrate. The first area is larger than the second area. In addition, a light blocking wall can extend from a first surface of the substrate such that at least a portion of the light blocking wall is between the first opto-electronic converter and the second opto-electronic converter.

Abstract: An image processing apparatus includes a first image processing circuit and a second image processing circuit connected to the first image processing circuit via a first signal line and a second signal line. The first image processing circuit outputs OSD image data representing an OSD image in the form of n sets of divided OSD image data that are generated by dividing the OSD image data by n to the second image processing circuit via the first signal line and outputs position information of the divided OSD image data to the second image processing circuit via the second signal line. The second image processing circuit outputs, based on first input image data, the n sets of divided OSD image data, and the position information, combined image data representing a combined image formed of the first input image on which the OSD image is superimposed.

Abstract: A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

Abstract: A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

Abstract: Imaging devices and electronic apparatuses incorporating imaging devices or image pick-up elements are provided. An imaging device as disclosed can include a substrate, a first opto-electronic converter having a first area formed in the substrate, and a second opto-electronic converter having a second area formed in the substrate. The first area is larger than the second area. In addition, a light blocking wall can extend from a first surface of the substrate such that at least a portion of the light blocking wall is between the first opto-electronic converter and the second opto-electronic converter.

Abstract: There is provided a method of manufacturing an imaging device including a plurality of imaging elements in an imaging area, where each imaging element includes a photoelectric conversion unit in a substrate and a wire grid polarizer arranged at a light-incident side of the photoelectric conversion unit. The method generally includes forming the wire grid polarizer that includes a plurality of stacked strip-shaped portions, where each of the plurality of stacked strip-shaped portions includes a portion of a light-reflecting layer and a portion of a light-absorbing layer. The light-reflecting layer may include a first electrical conducting material that is electrically connected to at least one of the substrate or the photoelectric conversion unit. The light-absorbing layer may include a second electrical conducting material, where at least a portion of the light-absorbing layer is in contact with the light-reflecting layer.

Abstract: There is provided an imaging element including a photoelectric conversion unit formed in a substrate and a wire grid polarizer disposed at a light-incident side of the photoelectric conversion unit. In addition, the wire grid polarizer includes a plurality of strip-shaped portions, where air gaps exist between adjacent strip-shaped portions. Further, a protective layer is formed on the wire grid polarizer.

Abstract: A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.