Abstract: A substrate processing method includes (A) to (C) to be described below. (A) A substrate having a first main surface and a second main surface opposite to the first main surface, and having unevenness on each of the first main surface and the second main surface is prepared. (B) Based on a measurement result of the unevenness of a first surface between the first main surface and the second main surface of the substrate, the first surface is planarized by radiating a laser beam to the first surface. (C) After planarizing the first surface of the substrate, a second surface of the substrate opposite to the first surface is planarized by grinding the second surface.

Abstract: A laser processing apparatus includes a holder configured to hold a substrate obtained by slicing a single crystal ingot; a light source configured to oscillate a laser beam to be radiated to a first main surface of the substrate; a moving unit configured to move a position of a radiation point of the laser beam on the first main surface of the substrate in a state that the substrate is held by the holder; and a controller configured to control the light source and the moving unit. The controller controls the light source and the moving unit to radiate the laser beam to the first main surface of the substrate to remove a surface layer of the first main surface of the substrate, so that fragment adhering to the first main surface during the slicing of the single crystal ingot is removed.

Abstract: A replacing apparatus is configured to replace a processing tool in a processing apparatus. The processing apparatus includes a holder configured to hold a processing target object, a processing mechanism to which the processing tool configured to process the processing target object held by the holder is installed in a replaceable manner, and an exterior cover accommodating therein the holder and the processing mechanism. The replacing apparatus includes a replacing mechanism, a moving mechanism, a traveling table and a traveling mechanism. The replacing mechanism installs the processing tool to the processing mechanism, or separates the processing tool from the processing mechanism. The moving mechanism is configured to move the replacing mechanism from an outside of the exterior cover to an inside thereof through an entrance opening of the exterior cover. The traveling table supports the moving mechanism. The traveling mechanism is configured to allow the traveling table to travel.

Abstract: A processing apparatus includes a holder configured to hold a processing target object; a processing mechanism to which a processing tool configured to process the processing target object held by the holder is installed in a replaceable manner; and an exterior cover accommodating the holder and the processing mechanism therein. The exterior cover includes an entrance opening through which a replacing apparatus configured to replace the processing tool passes when advancing to an inside of the exterior cover from an outside thereof. The processing apparatus further includes a shutter configured to open or close the entrance opening of the exterior cover.

Abstract: A substrate processing method of a combined substrate in which a first substrate having a surface film stacked thereon and a second substrate are bonded to each other includes separating the first substrate as a removing target from the second substrate; and removing or modifying at least a surface layer of the surface film at a peripheral portion of the second substrate by radiating laser light to an exposed surface of the surface film remaining at the peripheral portion of the second substrate, the exposed surface being exposed as a result of the separating of the first substrate.

Abstract: A bonding apparatus is configured to bond a first substrate and a second substrate to prepare a combined substrate. The first substrate includes a base substrate, and a device layer formed on a surface of the base substrate facing the second substrate. The bonding apparatus includes a first holder configured to hold the first substrate; a second holder configured to hold the second substrate; a moving unit configured to move the first holder and the second holder relative to each other; and a total thickness measurement controller configured to control a thickness detector, which is configured to measure a total thickness of the combined substrate, to measure the total thickness at multiple points.

Abstract: A substrate processing method of transcribing, in a combined substrate in which a first substrate and a second substrate are bonded to each other, a device layer formed on a surface of the second substrate to the first substrate is provided. A laser beam is radiated in a pulse shape from a rear surface side of the second substrate to a laser absorption layer formed between the second substrate and the device layer.

Abstract: A manufacturing method of a chip-attached substrate includes preparing a stacked substrate including multiple chips, a first substrate to which the multiple chips are temporarily bonded, and a second substrate bonded to the first substrate with the multiple chips therebetween; and separating the multiple chips bonded to the first substrate and the second substrate from the first substrate to bond the multiple chips to one surface of a third substrate including a device layer.

Abstract: A substrate processing method includes preparing a stacked substrate including a first substrate divided into multiple chips, a protective film divided for each of the multiple chips to protect the chip, a second substrate supporting the first substrate, and an adhesive film configured to attach the protective film and the second substrate; reducing adhesive strength of the adhesive film with a light beam configured to penetrate the second substrate; and picking-up, from the adhesive film by a pick-up device, the chip and the protective film with the reduced adhesive strength to the adhesive film.

Abstract: A substrate processing method of processing a processing target substrate having a device formed on a front surface thereof includes preparing, in a first separation substrate on a side with the device and a second separation substrate on a side without the device separated from a device substrate, the second separation substrate; and bonding, by reusing the second separation substrate, the second separation substrate to a processing target substrate. A substrate processing system configured to process the processing target substrate having the device formed on the front surface thereof includes a bonding device configured to bond, in the first separation substrate on the side with the device and the second separation substrate on the side without the device separated from the device substrate, the second separation substrate to the processing target substrate by reusing the second separation substrate.

Abstract: A device wafer processing method includes, a groove forming step in which grooves with a predetermined depth are formed in the front side of a device wafer; a plate attaching step in which a plate is attached to the front side of the wafer through an adhesive; a grinding step in which the wafer is held by a holding table through the plate so as to expose the back side of the wafer, and the back side is ground to expose the grooves at the back side of the wafer, thereby dividing the wafer to form a plurality of chips. The method further includes: a film attaching step in which a film is attached to the back side of the wafer; and a dicing step in which the film is diced along division lines from the side of the back side of the wafer.

Abstract: A device wafer processing method includes: a groove forming step in which grooves with a predetermined depth are formed in the front side of a device wafer; a plate attaching step in which a plate is attached to the front side of the wafer through an adhesive; a grinding step in which the wafer is held by a holding table through the plate so as to expose the back side of the wafer, and the back side is ground to expose the grooves at the back side of the wafer, thereby dividing the wafer to form a plurality of chips. The method further includes: a film attaching step in which a film is attached to the back side of the wafer; and a dicing step in which the film is diced along division lines from the side of the back side of the wafer.

Abstract: In a plate attaching step, a plate is attached to a front side of a device wafer through an adhesive. In a grinding step, the device wafer is held by a holding table through the plate, and an exposed back side of the device wafer is ground by grinding means to thin the device wafer down to a predetermined thickness. In a dicing step, the device wafer is divided along division lines from the side of the back side thereof, to form a plurality of chips. In a picking-up step, the chips are individually picked up from the plate. The plate is substantially the same as the device wafer in size, and, therefore, an increase in the size of a dicing apparatus can be restrained even when the device wafers to be processed are enlarged in diameter.

Abstract: A wafer processing machine comprising a turntable, a plurality of chuck tables mounted on the turntable, a grinding means for grinding a wafer held on the chuck table, and a multipurpose polishing means for polishing the ground surface of a wafer held on a chuck table, wherein the multipurpose polishing means comprises a mounter for detachably mounting a polishing tool, a spindle unit for rotating the mounter, a spindle unit support means for supporting the spindle unit in such a manner that the spindle unit can move in a direction perpendicular to the holding surfaces of the chuck tables and in a direction parallel to the holding surfaces of the chuck tables, a first polishing-feed means for moving the spindle unit in a direction perpendicular to the holding surfaces of the chuck tables, and a second polishing-feed means for moving the spindle unit in a direction parallel to the holding surfaces of the chuck tables.

Abstract: A wafer processing machine comprising a turntable, a plurality of chuck tables mounted on the turntable, a grinding means for grinding a wafer held on the chuck table, and a multipurpose polishing means for polishing the ground surface of a wafer held on a chuck table, wherein the multipurpose polishing means comprises a mounter for detachably mounting a polishing tool, a spindle unit for rotating the mounter, a spindle unit support means for supporting the spindle unit in such a manner that the spindle unit can move in a direction perpendicular to the holding surfaces of the chuck tables and in a direction parallel to the holding surfaces of the chuck tables, a first polishing-feed means for moving the spindle unit in a direction perpendicular to the holding surfaces of the chuck tables, and a second polishing-feed means for moving the spindle unit in a direction parallel to the holding surfaces of the chuck tables.

Abstract: A machining strain removal apparatus for removing machining strain present on a treated surface of a workpiece, for example, a ground back of a semiconductor wafer by polishing the treated surface or ground back with a polishing tool with a high efficiency in a high quality. The apparatus includes a chuck for holding the workpiece while exposing the treated surface, and a polishing component for polishing the treated surface of the workpiece held on the chuck. The polishing component includes a polishing tool, and presses the polishing tool being rotated against the treated surface of the workpiece, thereby polishing the treated surface.

Abstract: A machining strain removal apparatus for removing machining strain present on a treated surface of a workpiece, for example, a ground back of a semiconductor wafer by polishing the treated surface or ground back with a polishing tool with a high efficiency in a high quality. The apparatus comprises chuck means for holding the workpiece while exposing the treated surface, and polishing means for polishing the treated surface of the workpiece held on the chuck means. The polishing means includes a polishing tool, and presses the polishing tool being rotated against the treated surface of the workpiece, thereby polishing the treated surface.