Abstract: A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and an n-type layer that includes a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode, which mainly contains a compound represented by Gav1Znv2Snv3M1v4Ov5, the M1 being one or more selected from the group consisting of Hf, Zr, In, Ti, Al, B, Mg, Si, and Ge, the v1, the v2, and the v4 being numerical values of 0.00 or more, the v3 and the v5 being numerical values of more than 0, at least one of the v1 and the v2 being a numerical value of more than 0, and the v5 when a sum of the v1, the v2, the v3, and the v4 is 1 being 1.00 or more and 2.

Abstract: According to one embodiment, a data processing device includes an acquisition part, and a processor. The acquisition part is configured to acquire first data including time-series image data. The processor is configured to derive first feature information based on a multidimensional array of n dimensions based on the first data acquired by the acquisition part. n is an integer not less than 3. A first axis of the multidimensional array is related to time.

Abstract: A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode, which mainly contains a compound represented by Gax1M1x2M2x3M3x4M4x5Ox6, the M1 being Hf and/or Zr, the M2 being one or more selected from the group consisting of In, Ti, and Zn, the M3 being Al and/or B, the M4 is one or more selected from the group consisting of Sn, Si, and Ge, the x1, the x2, and the x6 being more than 0, the x3, the x4, and the x5 being 0 or more, and the x6 when a sum of the x1, the x2, the x3, the x4, and the x5 is 2 being 3.0 or more and 3.8 or less.

Abstract: A method for manufacturing a stacked thin film of an embodiment includes forming a p-electrode on a substrate, forming a film that mainly contains a cuprous oxide and/or a complex oxide of cuprous oxides on the p-electrode, and performing an oxidation treatment on the film that mainly contains the cuprous oxide and/or the complex oxide of cuprous oxides. An ozone partial pressure in the oxidation treatment is 5 [Pa] or more and 200 [Pa] or less, a treatment temperature in the oxidation treatment is 273 [K] or more and 323 [K] or less, and a treatment time in the oxidation treatment is 1 second or more and 60 minutes or less.

Abstract: A magnet material of an embodiment includes a composition represented by a formula 1: (Fe1-x-yCoxTy)2(B1-aAa)b, and a metallic structure having a CuAl2 crystal phase as a main phase. T is at least one element selected from V, Cr, and Mn. A is at least one element selected from C, N, Si, S, P, and Al. An atomic ratio x of Co and an atomic ratio y of the element T satisfy 0.01?y?0.5 and x+y?0.5. When the element T includes at least one element selected from V and Cr, a total atomic ratio of V and Cr is 0.03 or more. When the element T includes Mn, an atomic ratio of Mn is 0.3 or less. An atomic ratio a of the element A satisfies 0?a?0.4. A total atomic ratio b of B and the element A satisfies 0.8?b?1.2.

Abstract: A graphene wiring structure of an embodiment has: an amorphous or polycrystalline insulating film; and a multilayer graphene on the insulating film. The multilayer graphene including a plurality of graphene crystals having a zigzag direction is oriented at 17 degrees or less with respect to an electric conduction direction on the insulating film.

Abstract: A method for manufacturing a semiconductor device according to an embodiment includes: forming an insulating layer having a first plane in contact with a nitride semiconductor layer and a second plane opposite to the first plane and containing at least one of an oxide and an oxynitride; and performing first heat treatment at 600° C. or more and 1100° C. or less in a state where a voltage making a first plane side positive relative to a second plane side is applied to the insulating layer.

Abstract: A graphene wiring structure of an embodiment has: an amorphous or polycrystalline insulating film; and a multilayer graphene on the insulating film. The multilayer graphene including a plurality of graphene crystals having a zigzag direction is oriented at 17 degrees or less with respect to an electric conduction direction on the insulating film.

Abstract: A method for manufacturing a semiconductor device according to an embodiment includes: forming an insulating layer having a first plane in contact with a nitride semiconductor layer and a second plane opposite to the first plane and containing at least one of an oxide and an oxynitride; and performing first heat treatment at 600° C. or more and 1100° C. or less in a state where a voltage making a first plane side positive relative to a second plane side is applied to the insulating layer.

Abstract: A magnet material of an embodiment includes a composition represented by a formula 1: (Fe1-x-yCoxTy)2(B1-aAa)b, and a metallic structure having a CuAl2 crystal phase as a main phase. T is at least one element selected from V, Cr, and Mn. A is at least one element selected from C, N, Si, S, P, and Al. An atomic ratio x of Co and an atomic ratio y of the element T satisfy 0.01?y?0.5 and x+y?0.5. When the element T includes at least one element selected from V and Cr, a total atomic ratio of V and Cr is 0.03 or more. When the element T includes Mn, an atomic ratio of Mn is 0.3 or less. An atomic ratio a of the element A satisfies 0?a?0.4. A total atomic ratio b of B and the element A satisfies 0.8?b?1.2.

Abstract: A magnet material of an embodiment includes a composition represented by a formula 1: (Fe1-x-yCoxTy)2(B1-aAa)b, and a metallic structure having a CuAl2 crystal phase as a main phase. T is at least one element selected from V, Cr, and Mn. A is at least one element selected from C, N, Si, S, P, and Al. An atomic ratio x of Co and an atomic ratio y of the element T satisfy 0.01?y?0.5 and x+y?0.5. When the element T includes at least one element selected from V and Cr, a total atomic ratio of V and Cr is 0.03 or more. When the element T includes Mn, an atomic ratio of Mn is 0.3 or less. An atomic ratio a of the element A satisfies 0?a?0.4. A total atomic ratio b of B and the element A satisfies 0.8?b?1.2.

Abstract: A graphene wiring structure of an embodiment has: an amorphous or polycrystalline insulating film; and a multilayer graphene on the insulating film. The multilayer graphene including a plurality of graphene crystals having a zigzag direction is oriented at 17 degrees or less with respect to an electric conduction direction on the insulating film.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer including a nitride semiconductor, a first electrode separated from the first semiconductor layer in a first direction, and a first insulating film including silicon and oxygen and being provided between the first semiconductor layer and the first electrode. The first insulating film has a first thickness in the first direction. The first insulating film includes a first position, and a distance between the first position and the first semiconductor layer is ½ of the first thickness. A first hydrogen concentration of hydrogen at the first position is 2.5×1019 atoms/cm3 or less.

Abstract: A graphene wiring structure of an embodiment has: an amorphous or polycrystalline insulating film; and a multilayer graphene on the insulating film. The multilayer graphene including a plurality of graphene crystals having a zigzag direction is oriented at 17 degrees or less with respect to an electric conduction direction on the insulating film.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer including a nitride semiconductor, a first electrode separated from the first semiconductor layer in a first direction, and a first insulating film including silicon and oxygen and being provided between the first semiconductor layer and the first electrode. The first insulating film has a first thickness in the first direction. The first insulating film includes a first position, and a distance between the first position and the first semiconductor layer is ½ of the first thickness. A first hydrogen concentration of hydrogen at the first position is 2.5×1019 atoms/cm3 or less.

Abstract: Such a mobile recycler that an operator can replenish a reducing agent tank with a reducing agent from the ground is provided. A reducing agent tank stores a reducing agent supplied to an exhaust gas treatment device treating an exhaust gas from an engine through reduction reaction. A tank case accommodates the reducing agent tank. The tank case has a support base supporting a container of the reducing agent for replenishment to the reducing agent tank.

Abstract: Such a mobile recycler that an operator can replenish a reducing agent tank with a reducing agent from the ground is provided. A reducing agent tank stores a reducing agent supplied to an exhaust gas treatment device treating an exhaust gas from an engine through reduction reaction. The reducing agent tank is arranged in front of a front end of a crawler belt and in the rear of a front end of a track frame in a fore/aft direction. The reducing agent tank is arranged as being superimposed on the crawler belt in a front view, below an engine frame at a distance therefrom.

Abstract: Such a mobile recycler that an operator can replenish a reducing agent tank with a reducing agent from the ground is provided. A reducing agent tank stores a reducing agent supplied to an exhaust gas treatment device treating an exhaust gas from an engine through reduction reaction. A tank case accommodates the reducing agent tank. The tank case has a support base supporting a container of the reducing agent for replenishment to the reducing agent tank.

Abstract: Such a mobile recycler that an operator can replenish a reducing agent tank with a reducing agent from the ground is provided. A reducing agent tank stores a reducing agent supplied to an exhaust gas treatment device treating an exhaust gas from an engine through reduction reaction. The reducing agent tank is arranged in front of a front end of a crawler belt and in the rear of a front end of a track frame in a fore/aft direction. The reducing agent tank is arranged as being superimposed on the crawler belt in a front view, below an engine frame at a distance therefrom.

Abstract: A hard-disk drive having a structurally efficient magnetic head slider utilizes a MAMR-based spin torque oscillator (STO) for head-disk contact detection and for flying height sensing. Contact detection and spacing estimation techniques consider the nominal temperature difference, and thus different criteria, between read and write operations.