Abstract: Quantum circuit includes 1st block and 2nd block. 1st block includes gate operation layer and measurement layer. Gate operation layer includes encoding gate parameterized with encoding parameter including encoded input information for constructing 1st HF state, and transformation gate parameterized with learning parameter for transforming 1st HF state into 1st quantum state. Measurement layer outputs measurement value of 1st quantum state. 2nd block includes gate operation layer. Gate operation layer includes 2nd encoding gate parameterized with encoding parameter including encoded measurement value for constructing 2nd HF state, and transformation gate parameterized with learning parameter for transforming 2nd HF state into 2nd quantum state.

Abstract: A molecular structure optimization system includes a quantum computer and a classical computer. The quantum computer uses a parameterized quantum circuit to calculate a loss function from a coordinate parameter of a target molecule. The classical computer updates the coordinate parameter and the circuit parameter based on the loss function, and determines optimum values of the circuit parameter and the coordinate parameter. The classical computer updates a provisional value of the circuit parameter while fixing the coordinate parameter and changing the circuit parameter. The classical computer updates a provisional value of the coordinate parameter while fixing the circuit parameter and changing the coordinate parameter.

Abstract: A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode, which mainly contains a compound represented by Gax1M1x2M2x3M3x4M4x5Ox6, the M1 being Hf and/or Zr, the M2 being one or more selected from the group consisting of In, Ti, and Zn, the M3 being Al and/or B, the M4 is one or more selected from the group consisting of Sn, Si, and Ge, the x1, the x2, and the x6 being more than 0, the x3, the x4, and the x5 being 0 or more, and the x6 when a sum of the x1, the x2, the x3, the x4, and the x5 is 2 being 3.0 or more and 3.8 or less.

Abstract: A solar cell according to an embodiment includes a p? electrode, an n? electrode, a p? type light-absorbing layer on the p? electrode, and an n? type layer between the p? type light-absorbing layer and the n? electrode. A first region is included in the p? type light-absorbing layer from a surface on the n? type layer side toward the p? electrode. The first region includes n? type dopant. A thickness of the first region is 1500 [nm] or more and a thickness of the p? type light-absorbing layer [nm]. A concentration of the n? type dopant of the first region is 1.0×1014 [cm?3] or more and 1.0×1019 [cm?3] or less. The concentration of the n? type dopant of the first region and a concentration of hole of the first region satisfy 10?the concentration of the n? type dopant/the concentration of hole?5.0×1026.

Abstract: According to one embodiment, a solar cell includes first and second conductive layers, first and second counter conductive layers, first and second photoelectric conversion layers, first and second compound layers. The first counter conductive layer includes a first conductive region. A direction from the first conductive layer to the first conductive region is along a first direction. The first compound layer includes a first compound region provided between the first photoelectric conversion layer and the first conductive region. A second direction from the first conductive layer to the second conductive layer crosses the first direction. The second counter conductive layer includes a second conductive region electrically connected with the first conductive layer. A direction from the second conductive layer to the second conductive region is along the first direction. A direction from the first conductive region to the second conductive region is along the second direction.

Abstract: A tandem solar cell according to an embodiment includes a top cell string, a bottom cell string, a top cell module, a first string connection, a bottom cell module, and a second string connection. The top cell string is formed by electrically connecting a plurality of top cells. The bottom cell string is formed by electrically connecting a plurality of bottom cells. The bottom cell string is arranged so as to overlap the top cell string in a plan view in a thickness direction of the top cell. The first string connection includes a first extending portion extending to an outside of the top cell module in the plan view. A plurality of bottom cell strings are electrically connected to the bottom cell module. The first extending portion and the second extending portion are arranged apart from each other in the plan view.

Abstract: A solar cell according to an embodiment includes a p-electrode, a p-type light-absorbing layer containing a cuprous oxide or/and a complex oxide of cuprous oxides as a main component on the p-electrode, an n-type layer containing an oxide containing Ga on the p-type light-absorbing layer, and an n-electrode. A first region is included between the p-type light-absorbing layer and the n-type layer. The first region is a region from a depth of 2 nm from an interface between the p-type light-absorbing layer and the n-type layer toward the p-type light absorbing layer to a depth of 2 nm from the interface between the p-type light-absorbing layer and the n-type layer toward the n-type layer. Cu, Ga, M1, and O are contained in the first region. M1 is one or more elements selected from the group consisting of Sn, Sb, Ag, Li, Na, K, Cs, Rb, Al, In, Zn, Mg, Si, Ge, N, B, Ti, Hf, Zr, and Ca. A ratio of Cu, Ga, M1, and O is a1:b1:c1:d1. a1, b1, c1, and d1 satisfy 1.80?a1?2.20, 0.005?b1?0.05, 0?c1?0.20, and 0.60?d1?1.00.

Abstract: A solar cell of an embodiment includes a p-electrode, a p-type light-absorbing layer containing a cuprous oxide and/or a complex oxide of cuprous oxides on the p-electrode, an n-type layer on the p-type light-absorbing layer, and an n-electrode, when a first region is a region of the p-type light-absorbing layer from an interface between the p-type light absorbing layer and n-type layer to a depth of 10 nm toward the p-electrode and a second region is a region of the p-type light-absorbing layer from the interface between the p-type light absorbing layer and the n-type layer to a depth of 100 nm toward the p-electrode excluding the first region, a maximum intensity of an intensity profile of a HAADF-STEM image of the first region is 95% or more and 105% or less of an average intensity of an intensity profile of a HAADF-STEM of the second region.

Abstract: A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and an n-type layer that includes a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode, which mainly contains a compound represented by Gav1Znv2Snv3M1v4Ov5, the M1 being one or more selected from the group consisting of Hf, Zr, In, Ti, Al, B, Mg, Si, and Ge, the v1, the v2, and the v4 being numerical values of 0.00 or more, the v3 and the v5 being numerical values of more than 0, at least one of the v1 and the v2 being a numerical value of more than 0, and the v5 when a sum of the v1, the v2, the v3, and the v4 is 1 being 1.00 or more and 2.

Abstract: According to one embodiment, a data processing device includes an acquisition part, and a processor. The acquisition part is configured to acquire first data including time-series image data. The processor is configured to derive first feature information based on a multidimensional array of n dimensions based on the first data acquired by the acquisition part. n is an integer not less than 3. A first axis of the multidimensional array is related to time.

Abstract: A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode, which mainly contains a compound represented by Gax1M1x2M2x3M3x4M4x5Ox6, the M1 being Hf and/or Zr, the M2 being one or more selected from the group consisting of In, Ti, and Zn, the M3 being Al and/or B, the M4 is one or more selected from the group consisting of Sn, Si, and Ge, the x1, the x2, and the x6 being more than 0, the x3, the x4, and the x5 being 0 or more, and the x6 when a sum of the x1, the x2, the x3, the x4, and the x5 is 2 being 3.0 or more and 3.8 or less.

Abstract: A method for manufacturing a stacked thin film of an embodiment includes forming a p-electrode on a substrate, forming a film that mainly contains a cuprous oxide and/or a complex oxide of cuprous oxides on the p-electrode, and performing an oxidation treatment on the film that mainly contains the cuprous oxide and/or the complex oxide of cuprous oxides. An ozone partial pressure in the oxidation treatment is 5 [Pa] or more and 200 [Pa] or less, a treatment temperature in the oxidation treatment is 273 [K] or more and 323 [K] or less, and a treatment time in the oxidation treatment is 1 second or more and 60 minutes or less.

Abstract: A magnet material of an embodiment includes a composition represented by a formula 1: (Fe1-x-yCoxTy)2(B1-aAa)b, and a metallic structure having a CuAl2 crystal phase as a main phase. T is at least one element selected from V, Cr, and Mn. A is at least one element selected from C, N, Si, S, P, and Al. An atomic ratio x of Co and an atomic ratio y of the element T satisfy 0.01?y?0.5 and x+y?0.5. When the element T includes at least one element selected from V and Cr, a total atomic ratio of V and Cr is 0.03 or more. When the element T includes Mn, an atomic ratio of Mn is 0.3 or less. An atomic ratio a of the element A satisfies 0?a?0.4. A total atomic ratio b of B and the element A satisfies 0.8?b?1.2.

Abstract: A graphene wiring structure of an embodiment has: an amorphous or polycrystalline insulating film; and a multilayer graphene on the insulating film. The multilayer graphene including a plurality of graphene crystals having a zigzag direction is oriented at 17 degrees or less with respect to an electric conduction direction on the insulating film.

Abstract: A method for manufacturing a semiconductor device according to an embodiment includes: forming an insulating layer having a first plane in contact with a nitride semiconductor layer and a second plane opposite to the first plane and containing at least one of an oxide and an oxynitride; and performing first heat treatment at 600° C. or more and 1100° C. or less in a state where a voltage making a first plane side positive relative to a second plane side is applied to the insulating layer.

Abstract: A graphene wiring structure of an embodiment has: an amorphous or polycrystalline insulating film; and a multilayer graphene on the insulating film. The multilayer graphene including a plurality of graphene crystals having a zigzag direction is oriented at 17 degrees or less with respect to an electric conduction direction on the insulating film.

Abstract: A method for manufacturing a semiconductor device according to an embodiment includes: forming an insulating layer having a first plane in contact with a nitride semiconductor layer and a second plane opposite to the first plane and containing at least one of an oxide and an oxynitride; and performing first heat treatment at 600° C. or more and 1100° C. or less in a state where a voltage making a first plane side positive relative to a second plane side is applied to the insulating layer.

Abstract: A magnet material of an embodiment includes a composition represented by a formula 1: (Fe1-x-yCoxTy)2(B1-aAa)b, and a metallic structure having a CuAl2 crystal phase as a main phase. T is at least one element selected from V, Cr, and Mn. A is at least one element selected from C, N, Si, S, P, and Al. An atomic ratio x of Co and an atomic ratio y of the element T satisfy 0.01?y?0.5 and x+y?0.5. When the element T includes at least one element selected from V and Cr, a total atomic ratio of V and Cr is 0.03 or more. When the element T includes Mn, an atomic ratio of Mn is 0.3 or less. An atomic ratio a of the element A satisfies 0?a?0.4. A total atomic ratio b of B and the element A satisfies 0.8?b?1.2.

Abstract: A magnet material of an embodiment includes a composition represented by a formula 1: (Fe1-x-yCoxTy)2(B1-aAa)b, and a metallic structure having a CuAl2 crystal phase as a main phase. T is at least one element selected from V, Cr, and Mn. A is at least one element selected from C, N, Si, S, P, and Al. An atomic ratio x of Co and an atomic ratio y of the element T satisfy 0.01?y?0.5 and x+y?0.5. When the element T includes at least one element selected from V and Cr, a total atomic ratio of V and Cr is 0.03 or more. When the element T includes Mn, an atomic ratio of Mn is 0.3 or less. An atomic ratio a of the element A satisfies 0?a?0.4. A total atomic ratio b of B and the element A satisfies 0.8?b?1.2.

Abstract: A graphene wiring structure of an embodiment has: an amorphous or polycrystalline insulating film; and a multilayer graphene on the insulating film. The multilayer graphene including a plurality of graphene crystals having a zigzag direction is oriented at 17 degrees or less with respect to an electric conduction direction on the insulating film.