Patents by Inventor Yasutomo Fujiyama
Yasutomo Fujiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6058945Abstract: Provided is a suitable cleaning method of a porous semiconductor substrate without collapse of the porous structure due to cavitation or resonance. In a cleaning method of a porous surface of a semiconductor substrate having the porous structure at least in the surface, cleaning for removing dust particles adhering to the porous surface of the substrate takes place with pure water on which a high-frequency wave with a frequency in the range of from 600 kHz to 2 MHz is superimposed.Type: GrantFiled: September 3, 1997Date of Patent: May 9, 2000Assignee: Canon Kabushiki KaishaInventors: Yasutomo Fujiyama, Hideya Kumomi
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Patent number: 5754344Abstract: This invention relates to a head-mounted stereoscopic image display apparatus to be mounted on the head portion of an observer, including display means for displaying a stripe image formed by dividing right and left parallax images that constitute a stereoscopic image into stripe pixels, and alternately arranging the right and left stripe pixels in a predetermined order, an image separation optical system disposed in front of the display means and adapted to separate light beams outgoing from the right and left stripe pixels, and a concave mirror adapted to reflect the light beams from the image separation optical system so as to allow the observer to observe virtual images of the parallax images.Type: GrantFiled: October 9, 1996Date of Patent: May 19, 1998Assignee: Canon Kabushiki KaishaInventor: Yasutomo Fujiyama
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Patent number: 5458755Abstract: An anodization apparatus for anodizing the surface of a semiconductor substrate by supporting the semiconductor substrate between a pair of electrodes in an electrolytic solution and applying a voltage across the pair of electrodes. The anodization apparatus includes an elastic sealing member for supporting a peripheral portion of the semiconductor substrate such that a surface portion of a semiconductor substrate remains exposed, a support jig which includes a tapered hollow portion for supporting the sealing member, and a device for introducing a fluid of gas or liquid into the tapered hollow portion. When the fluid is introduced, the sealing member is pressed against and brought into hermetic contact with the tapered hollow portion and with the entire peripheral portion of the semiconductor substrate such that the electrolytic solution is separated into electrically isolated parts by coordination between the semiconductor substrate, the sealing member, and the support jig.Type: GrantFiled: November 8, 1993Date of Patent: October 17, 1995Assignee: Canon Kabushiki KaishaInventors: Yasutomo Fujiyama, Mitsuhiro Ishii, Senju Kanbe, Takao Yonehara, Toru Takisawa, Akira Okita, Kiyofumi Sakaguchi, Takanori Watanabe, Kazuo Kokumai
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Patent number: 5038712Abstract: An improved apparatus for the formation of a functional deposited film using a microwave plasma chemical vapor deposition process characterized in that a microwave transmissible dielectric material is used for the microwave introducing window, and the window has a structure wherein the dielectric material is divided into blocks of the same or different dielectric materials having a specific inductive capacity of more than 1.0. In this way it is possible to adjust not only the resonant frequency characteristics but also the electromagnetic resonant mode of the window to resonate with the microwave oscillation frequency so as to enhance microwave transmission.Type: GrantFiled: December 18, 1989Date of Patent: August 13, 1991Assignee: Canon Kabushiki KaishaInventor: Yasutomo Fujiyama
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Patent number: 4958185Abstract: In a photographing apparatus such as a single lens reflex camera, metering photoelectric conversion elements are provided in the optical path of an imaging optical system or a finder optical system and the line width of the pattern forming the elements is set to a width undiscernable by the human eye. Thus, with such metering photoelectric conversion elements, no irregularity of the quantity of amount is caused in the image observed through the finder or the image photographed.Type: GrantFiled: June 7, 1988Date of Patent: September 18, 1990Assignee: Canon Kabushiki KaishaInventors: Osamu Kamiya, Yasutomo Fujiyama
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Patent number: 4909184Abstract: An improved apparatus for the formation of a functional deposited film using microwave plasma chemical vapor deposition process is characterized in that the relative setting angle between waveguides confronting each other is set to be 60.degree. or 240.degree. in the counterclockwise direction, which makes it possible to stably introduce the microwave energy into the vacuum chamber simultaneously from the plural microwave power sources without any interference among them.Type: GrantFiled: October 28, 1987Date of Patent: March 20, 1990Assignee: Canon Kabushiki KaishaInventor: Yasutomo Fujiyama
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Patent number: 4909183Abstract: An apparatus for Plasma CVD process comprises a vacuum chamber in which a plural number of substrates being placed along a circle and separately from each other, and means for passing a starting gas or an evacuating gas through gaps between the adjacent substrates.Type: GrantFiled: May 30, 1989Date of Patent: March 20, 1990Assignee: Canon Kabushiki KaishaInventors: Osamu Kamiya, Yasutomo Fujiyama
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Patent number: 4732792Abstract: The surface of an element of a vacuum apparatus is coated with a film formed by a flame spraying method.Type: GrantFiled: October 3, 1985Date of Patent: March 22, 1988Assignee: Canon Kabushiki KaishaInventor: Yasutomo Fujiyama
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Patent number: 4719873Abstract: A film forming apparatus utilizing discharge to accomplish film formation is provided with a cover electrode movable back and forth and a gas supply pipe. By moving the cover electrode, the cover electrode and a substrate containing cassette in which a substrate for film formation is contained and which is conveyed to a predetermined film forming position are electrically connected, and discharge is caused in the substrate containing cassette.Type: GrantFiled: August 27, 1985Date of Patent: January 19, 1988Assignee: Canon Kabushiki KaishaInventor: Yasutomo Fujiyama
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Patent number: 4709656Abstract: There is disclosed layer forming apparatus for forming a deposition layer on a substrate by means of electric discharge, comprising a supporting electrode, and a cassette of a structure capable of accommodating therein a substrate for layer formation and being inserted into said supporting electrode and electrically connected therewith to cause electric discharge in said cassette.Type: GrantFiled: November 14, 1985Date of Patent: December 1, 1987Assignee: Canon Kabushiki KaishaInventor: Yasutomo Fujiyama
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Patent number: 4666734Abstract: An apparatus and a process for mass production of films by vacuum deposition comprise a substrate charging stage which is evacuated, an interconnecting stage which is positioned adjacent to said substrate charging stage and is evacuated, and a film forming stage which is removably attached to the interconnecting stage and is evacuated independently of the interconnecting stage.Type: GrantFiled: May 5, 1983Date of Patent: May 19, 1987Assignee: Canon Kabushiki KaishaInventors: Osamu Kamiya, Keijiro Nishida, Yasutomo Fujiyama, Kyosuke Ogawa
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Patent number: 4648348Abstract: There is disclosed a plasma CVD apparatus for depositing a film on a substrate by creating a discharge between the substrate and an electrode arranged to face the substrate, wherein the electrode is constructed by a plurality of hexagonal pillar electrodes arranged in a honeycomb structure.Type: GrantFiled: July 23, 1985Date of Patent: March 10, 1987Assignee: Canon Kabushiki KaishaInventor: Yasutomo Fujiyama
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Patent number: 4646681Abstract: A gaseous phase method accumulated film manufacturing apparatus has one or more reaction furnace installation device on which a plurality of reaction furnaces for forming an accumulated film on a substrate by the gaseous phase method are movably installed, and one or more substrate conveying unit for conveying the substrate to the reaction furnaces.Type: GrantFiled: April 25, 1985Date of Patent: March 3, 1987Assignee: Canon Kabushiki KaishaInventor: Yasutomo Fujiyama
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Patent number: 4637342Abstract: A vacuum processing apparatus for applying a vacuum working process to a substrate to be processed by a plurality of processing steps comprises vacuum containers exclusively for use for processing disposed in place for each of the processing steps, and a vacuum container exclusively for use for conveyance movable between the vacuum containers exclusively for use for processing. The vacuum containers are provided with opening-closing gates which can be connected to each other. The substrate to be processed is transferably movable between the vacuum containers exclusively for use for processing and the vacuum container exclusively for use for conveyance.Type: GrantFiled: February 26, 1985Date of Patent: January 20, 1987Assignee: Canon Kabushiki KaishaInventors: Osamu Kamiya, Yasutomo Fujiyama, Kyosuke Ogawa, Takashi Kurokawa
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Patent number: 4633812Abstract: An improvement in a vacuum plasma treating apparatus having a reaction chamber partly formed of electric insulating material subject to corrosion by a fluorine or chlorine containing gas plasma, which improvement being that the electric insulating material subject to corrosion comprises a sintered ceramic material containing alumina as a primary ingredient.Type: GrantFiled: February 8, 1985Date of Patent: January 6, 1987Assignee: Canon Kabushiki KaishaInventor: Yasutomo Fujiyama
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Patent number: 4599971Abstract: In a vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into the vacuum chamber, the reactors are arranged on a circumference of a circle and coaxial cables having substantially equal impedance radially extend to the reactors from a matching circuit located at the center of the circle.Type: GrantFiled: May 6, 1985Date of Patent: July 15, 1986Assignee: Canon Kabushiki KaishaInventors: Yasutomo Fujiyama, Shotaro Okabe
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Patent number: 4545328Abstract: In a vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into the vacuum chamber, the reactors are arranged on a circumference of a circle and reaction gas supply pipes having substantially equal supply resistance radially extend to the reactors from a gas reservoir located at the center of the circle.Type: GrantFiled: September 6, 1984Date of Patent: October 8, 1985Assignee: Canon Kabushiki KaishaInventors: Yasutomo Fujiyama, Shotaro Okabe
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Patent number: 4539934Abstract: In a vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into the vacuum chamber, the reactors are arranged on the circumference of a circle and exhaust pipes having substantially equal exhaust resistance radially extend to the reactors from a common exhaust pipe located at the center of the circle.Type: GrantFiled: September 6, 1984Date of Patent: September 10, 1985Assignee: Canon Kabushiki KaishaInventors: Yasutomo Fujiyama, Shotaro Okabe
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Patent number: 4529474Abstract: A method of cleaning an apparatus for forming deposited film on a substrate to remove the substances attached to the inside walls of a reaction chamber in the course of the formation of deposited film on the substrate by etching with plasma reaction comprises using a gas mixture of carbon tetrafluoride and oxygen as etchant.Type: GrantFiled: January 30, 1984Date of Patent: July 16, 1985Assignee: Canon Kabushiki KaishaInventors: Yasutomo Fujiyama, Osamu Kamiya
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Patent number: 4526644Abstract: A treatment device utilizing plasma performs treatment by exposing a material to be treated to a plasma atmosphere formed by converting at least either one of fluorine and a fluorine compound into gas plasma, and said device comprises a structural member for forming the space for maintaining said plasma atmosphere, which is constituted of a stainless steel structure member coated on its surface exposed to said plasma atmosphere with a metal film which can difficultly form a fluoride.Type: GrantFiled: April 4, 1984Date of Patent: July 2, 1985Assignee: Canon Kabushiki KaishaInventors: Yasutomo Fujiyama, Osamu Kamiya