Abstract: A micro device having a micro system structure includes a protection film disposed on the micro system structure for protecting from a particle. The protection film includes a first protection film having a Vickers hardness equal to or larger than 2500 Hv or a nano indentation hardness equal to or larger than 13.64 GPa. The first protection film has a thickness in a range between 0.1 ?m and 30 ?m. The protection film has a total stress defined as a product of a film stress and a film thickness, and the total stress is equal to or smaller than 700 N/m.

Abstract: A semiconductor device includes a semiconductor wafer having a weak portion and a removable passivation cap disposed on the wafer for covering the weak portion. The passivation cap has an absorption coefficient of a laser beam, which is smaller than that of the wafer. The cap has a capability of passing water therethrough. In a case where the device is diced and cut into a plurality of chips, the passivation cap can be removed easily without bonding the cap again. That is because the passivation cap remains one body after dicing.

Abstract: A method for manufacturing a dynamic quantity detection device includes bonding a semiconductor chip that includes a detection element for detecting a dynamic quantity to a stand using a bonding layer. Initially, a semiconductor chip is formed that includes a detection element used for correlating a dynamic quantity to be detected to an electric quantity and a processing circuit element used for a circuit that processes the electric quantity. Further, a bonding layer is placed on a stand. The semiconductor chip is then placed on the bonding layer and the semiconductor chip is bonded to the stand by sintering the bonding layer at 400° C. or lower in order to suppress a change in a characteristic of the processing circuit element.

Abstract: The TMR device has a structure including a lower electrode layer, a pinned layer, a tunnel barrier layer, a free layer, and an upper electrode layer which are successively formed on a substrate. The tunnel barrier layer has substantially a stoichiometric composition. The tunnel barrier layer may be a thin film of an oxide of AL formed by ALD method.

Abstract: A semiconductor dynamic quantity sensor detects a dynamic force and a fault diagnosis through the use of a single bridge circuit. Sensor output terminals are connected to midpoints between gauge resistors to make a combination of the midpoints at which an equal electric potential is measured when no pressure is applied to a diaphragm of the sensor. Fault diagnostic output terminals are connected to wiring patterns in the same manner as the first output terminals. One of the sensor output terminals has three selectable terminals connected to different positions of the midpoint. One of the diagnostic output terminals also has three selectable terminals connected to different positions of the wiring patterns. Accordingly, an offset voltage of the sensor output and the fault diagnostic output can be adjusted appropriately when one of the selectable terminals are selected as appropriate.

Abstract: A light-receiving element having a light-receiving portion is formed on a chip surface. A digital circuit element, an analog circuit element and a circuit adjusting element are provided for cooperatively processing a detection signal produced from the light-receiving element. And, a light-shielding film is provided for selectively setting a light-receiving region on the chip surface.

Abstract: A pressure sensor includes: a casing; a sensor chip with a gauge resistor; a boss disposed on the gauge resistor; a metallic diaphragm capable of distorting in accordance with a pressure; and a load transmission member disposed between the metallic diaphragm and the boss. The casing accommodates the sensor chip, the boss and the load transmission member. The casing is covered with the metallic diaphragm. The pressure applied to the diaphragm is detected such that the load corresponding to the pressure is applied to the gauge resistor through the metallic diaphragm, the load transmission member and the boss so that the pressure is measured on the basis of a resistance change of the gauge resistor. The gauge resistor is larger than the boss.

Abstract: A pressure sensor includes a semiconductor substrate and a pedestal member such as a glass pedestal. The semiconductor substrate has a diaphragm for detecting a pressure and a thick portion positioned around the diaphragm. The pedestal member has one surface bonded to the thick portion of the semiconductor substrate and the other surface opposite to the one surface. In the pressure sensor, the pedestal member has a through hole through which pressure is introduced to the diaphragm. The through hole penetrates through the pedestal member from an opening of the other surface to the one surface of the pedestal member, and the through hole has a hole diameter that becomes smaller from the one surface toward the other surface of the pedestal member. Accordingly, it can effectively restrict foreign materials such as dusts from being introduced into the through hole of the pressure sensor.

Abstract: A pressure sensor includes a sensor element, and a resin package member that holds the sensor element. The sensor element is constructed by a semiconductor, and is capable of externally outputting an electric signal in accordance with strain generated when force is applied thereto. The sensor element is directly adhered to the package member via an adhesive layer that has Young's modulus in a range between 2.45×103 Pa and 2.06×104 Pa. Further the adhesive layer has a thickness equal to or more than 110 ?m. Accordingly, the pressure sensor effectively restricts a variation in a sensor characteristic due to a thermal change.

Abstract: A pressure sensor includes: a casing; a sensor chip with a gauge resistor; a boss disposed on the gauge resistor; a metallic diaphragm capable of distorting in accordance with a pressure; and a load transmission member disposed between the metallic diaphragm and the boss. The casing accommodates the sensor chip, the boss and the load transmission member. The casing is covered with the metallic diaphragm. The pressure applied to the diaphragm is detected such that the load corresponding to the pressure is applied to the gauge resistor through the metallic diaphragm, the load transmission member and the boss so that the pressure is measured on the basis of a resistance change of the gauge resistor. The gauge resistor is larger than the boss.

Abstract: An infrared gas sensor includes: an infrared light source having a resistor for emitting an infrared light by heating the resistor; an infrared light sensor having a detection device for generating an electric signal in accordance with a temperature change of the detection device corresponding to the infrared light in a case where the sensor receives the infrared light; a reflection member for reflecting the infrared light emitted from the light source to introduce the infrared light to the sensor; a casing for accommodating the light source, the light sensor, and the reflection member; and a substrate. The reflection member faces the light source. The resistor and the detection device are disposed on the substrate.

Abstract: An external connection wire is externally connected and is bonded to a portion of a predetermined exposed region of a bonding pad, which is exposed through a bonding pad opening of a passivation film. The bonding pad opening of the passivation film has a polygonal shape that has a plurality of corners, and each of the plurality of corners has an obtuse angle or is chamfered. A probe pad is electrically connected to the bonding pad through a conductive line covered with the passivation film. The passivation film is also located on the probe pad and further includes a probe pad opening, through which a predetermined exposed region of the probe pad is exposed. The probe pad opening has a polygonal shape that has a plurality of corners, and each of the plurality of corners has an obtuse angle or is chamfered.

Abstract: In a thermo pile infrared ray sensor, an opening portion is formed by etching a substrate from a second surface after an n-type poly-Si layer and a thin aluminium layer are formed so that first and second connection portions are formed by parts thereof. An infrared ray absorbent layer is formed on the substrate to cover the first connection portion with a screen print after the opening portion is formed.

Abstract: A method for manufacturing a dynamic quantity detection device that is formed by bonding a semiconductor chip that includes a detection element for detecting a dynamic quantity to a stand using a bonding layer includes: forming a semiconductor chip that includes a detection element used for correlating a dynamic quantity to be detected to an electric quantity and a plurality of processing circuit elements used for making up a circuit that processes the electric quantity; placing a bonding layer on a stand; placing the semiconductor chip on the bonding layer; bonding the semiconductor chip to the stand by sintering the bonding layer; and annealing the semiconductor chip in an atmosphere that contains hydrogen in order to cure a change, which is caused during the bonding of the semiconductor chip, in a characteristic of one of the processing circuit elements.

Abstract: First and second predetermined charging voltages are applied between the movable and fixed electrodes of a capacitive type of sensor to measure first and second capacitances between the movable and fixed electrodes, respectively. The first and second electrostatic capacitances are compared to obtain a characteristic of the sensor from a result of comparison. In measuring the first and second capacitances, first and second charging voltages are generated of which magnitudes are determined in accordance with the first and second capacitances, respectively. Equalization is made between the first output voltage when the first charging voltage is applied between the movable and fixed electrodes in a predetermined normal condition of the movable electrode and the second output voltage outputted when the second charging voltage is applied between the movable and fixed electrodes in the predetermined normal condition.

Abstract: A diaphragm-type semiconductor device includes a semiconductor substrate, a surface of which is substantially flat, a diaphragm, which covers a circular pressure reference space located on the surface, and a circular electrode layer, a middle part of which is embedded in the diaphragm. The electrode layer is larger than the space and is coaxial with the space. Therefore, internal stress is balanced between inner and outer sides of the diaphragm, and a step formed at the outer edge of the top electrode layer is separated from the diaphragm. The device also includes a step adjuster around the space on the surface. Therefore, another step formed at the outer edge of the space disappears, and a new step is formed separately from the diaphragm at the outer edge of the step adjuster. With this structure, the diaphragm has a desired flatness.

Abstract: A gas detection device includes a light source, a light sensor element, and a shield plate arranged in a single package. The shield plate protects the light sensor element from light beams that travel from the light source directly to the light sensor element. The gas detection device further includes a reflector plate arranged so that light beams emitted from the light source are reflected off the reflector plate and travel to the light sensor element. The light sensor element detects a degree of light absorption by gas provided in a space between the reflector plate, the light source, and the light sensor element.

Abstract: A semiconductor dynamic quantity sensor detects a dynamic force and a fault diagnosis through the use of a single bridge circuit. Sensor output terminals are connected to midpoints between gauge resistors to make a combination of the midpoints at which an equal electric potential is measured when no pressure is applied to a diaphragm of the sensor. Fault diagnostic output terminals are connected to wiring patterns in the same manner as the first output terminals. One of the sensor output terminals has three selectable terminals connected to different positions of the midpoint. One of the diagnostic output terminals also has three selectable terminals connected to different positions of the wiring patterns. Accordingly, an offset voltage of the sensor output and the fault diagnostic output can be adjusted appropriately when one of the selectable terminals are selected as appropriate.

Abstract: A semiconductor device includes a semiconductor wafer having a weak portion and a removable passivation cap disposed on the wafer for covering the weak portion. The passivation cap has an absorption coefficient of a laser beam, which is smaller than that of the wafer. The cap has a capability of passing water therethrough. In a case where the device is diced and cut into a plurality of chips, the passivation cap can be removed easily without bonding the cap again. That is because the passivation cap remains one body after dicing.

Abstract: A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.