Abstract: Provided is a conductor material having high conductivity. The conductor material according to an embodiment of the present disclosure has a configuration in which a conjugated polymeric compound having an electron donating group containing a heteroatom in a side chain is doped with a dopant containing an anion selected from a nitrogen anion, a boron anion, a phosphorus anion and an antimony anion, and a counter cation. The anion is preferably an anion represented by Formula (1) below: where R1 and R2 are identical or different, and each represent an electron withdrawing group; and R1 and R2 may be bonded to each other to form a ring with an adjacent nitrogen atom.

Abstract: Provided is a dopant with which a conductor material having high electrical conductivity can be formed. The present disclosure relates to a dopant containing a radical cation represented by Formula (1) and a counter anion. In Formula (1), R1 to R3 may be the same or different, and each denotes a monovalent aromatic group or a group represented by Formula (r). at least one of R1 to R3 is a group represented by Formula (r), and n indicates the valence of the radical cation and is equal to the quantity (n) of nitrogen atoms in the formula. In Formula (r), Ar1, Ar2, and Ar3 may be the same or different, and each denotes a divalent aromatic group, and Ar4, Ar5, Ar6, and Ar7 may be the same or different, and each denotes a monovalent aromatic group optionally having a substituent represented by Formula (sb) below. Furthermore, m and n may be the same or different, and each represents an integer of 0 or greater.

Abstract: A novel dopant according to the present disclosure includes an anion represented by the following Formula (1) and a counter cation. In Formula (1), R1 and R2 may be each at least one group selected from a nitro group, a cyano group, an acyl group, a carboxyl group, an alkoxycarbonyl group, a haloalkyl group, a sulfo group, an alkylsulfonyl group, an halosulfonyl group, and a haloalkylsulfonyl group, or may be a group formed by R1 and R2 bonded to each other [—SO2-L-SO2—] (where L represents a haloalkylene group). The counter cation may be a radical cation represented by Formula (2), where R1 and R2 represent electron-withdrawing groups that may be bonded to each other to form a heterocycle, and R3 to R5 represent a hydrogen atom, a hydrocarbon group that may have a substituent, or a heterocyclic group that may have a substituent. The dopant is capable of forming an electroconductive composition that shows a high conductivity.

Abstract: Provided is a conductor material having high conductivity. The conductor material according to an embodiment of the present disclosure has a configuration in which a conjugated polymeric compound having an electron donating group containing a heteroatom in a side chain is doped with a dopant containing an anion selected from a nitrogen anion, a boron anion, a phosphorus anion and an antimony anion, and a counter cation. The anion is preferably an anion represented by Formula (1) below: where R1 and R2 are identical or different, and each represent an electron withdrawing group; and R1 and R2 may be bonded to each other to form a ring with an adjacent nitrogen atom.

Abstract: The present disclosure provides an inorganic/organic hybrid complementary semiconductor device that can be manufactured at a lower cost, has excellent long-term stability, has a well-balanced operation between the p-type transistor and the n-type transistor, and operates at a high speed.

Abstract: The present disclosure provides a sealing material suitable for a compound having a non-stoichiometric composi263tion. The present disclosure is related to a sealing material for a compound having a non-stoichiometric composition, the sealing material including a polymer layer and an inorganic oxide insulator layer, wherein the polymer layer includes a first polymer layer containing an organic solvent soluble polymer.

Abstract: An object of the present invention is to provide an ink composition for manufacturing an organic semiconductor device, the ink composition allowing an organic semiconductor material with a rigid main chain into an ink having an optimal solute concentration for a single-crystal formation process. The present invention provides an ink composition for manufacturing an organic semiconductor device, the ink composition including at least one solvent selected from Naphthalene Compound (A) and at least one solute. The isomer content of Naphthalene Compound (A) is preferably 2% or less in terms of a percentage for peak area with Naphthalene Compound (A) being 100% in gas chromatography. Naphthalene Compound (A): a compound represented by Formula (a), where in Formula (a), R is as defined in the description.

Abstract: Provided is a conductor material having high conductivity. The conductor material according to an embodiment of the present disclosure has a configuration in which a conjugated polymeric compound having an electron donating group containing a heteroatom in a side chain is doped with a dopant containing an anion selected from a nitrogen anion, a boron anion, a phosphorus anion and an antimony anion, and a counter cation. The anion is preferably an anion represented by Formula (1) below: where R1 and R2 are identical or different, and each represent an electron withdrawing group; and R1 and R2 may be bonded to each other to form a ring with an adjacent nitrogen atom.

Abstract: The present invention provides a solvent composition for use in an ink for producing an electronic device using a printing method, the solvent composition being capable of improving the printing accuracy of the ink, being fired at low temperatures, and suppressing the amount of ash remaining after firing to a very low amount. The solvent composition for electronic device production of the present invention is for use in an ink for producing an electronic device by a printing method, and contains a miscible product of: a solvent and a compound represented by Formula (1) below. In Formula (1), R represents the same or different aliphatic hydrocarbon groups having 1 or more carbon atoms.

Abstract: Provided is a dopant with which a conductor material having high electrical conductivity can be formed. The present disclosure relates to a dopant containing a radical cation represented by Formula (1) and a counter anion. In Formula (1), R1 to R3 may be the same or different, and each denotes a monovalent aromatic group or a group represented by Formula (r). at least one of R1 to R3 is a group represented by Formula (r), and n indicates the valence of the radical cation and is equal to the quantity (n) of nitrogen atoms in the formula. In Formula (r), Ar1, Ar2, and Ar3 may be the same or different, and each denotes a divalent aromatic group, and Ar4, Ar5, Ar6, and Ar7 may be the same or different, and each denotes a monovalent aromatic group optionally having a substituent represented by Formula (sb) below. Furthermore, m and n may be the same or different, and each represents an integer of 0 or greater.

Abstract: Provided is a compound that is excellent in chemical stability, has a high solubility in a solvent, and exhibits an excellent carrier mobility. A compound represented by Formula (1): where in Formula (1), X1, X2, X3, and R1 to R10 are as defined in the specification.

Abstract: A novel dopant according to the present disclosure includes an anion represented by the following Formula (1) and a counter cation. In Formula (1), R1 and R2 may be each at least one group selected from a nitro group, a cyano group, an acyl group, a carboxyl group, an alkoxycarbonyl group, a haloalkyl group, a sulfo group, an alkylsulfonyl group, an halosulfonyl group, and a haloalkylsulfonyl group, or may be a group formed by R1 and R2 bonded to each other [—SO2-L-SO2—] (where L represents a haloalkylene group). The counter cation may be a radical cation represented by Formula (2), where R1 and R2 represent electron-withdrawing groups that may be bonded to each other to form a heterocycle, and R3 to R5 represent a hydrogen atom, a hydrocarbon group that may have a substituent, or a heterocyclic group that may have a substituent. The dopant is capable of forming an electroconductive composition that shows a high conductivity.

Abstract: An object of the present disclosure is to provide a paste that can suppress fluctuations in viscosity at a printing temperature to perform printing without unevenness, and is sintered fast even in an inert gas atmosphere such as nitrogen to form a highly accurate conductive wiring and a joined structure excellent in joining strength. The present disclosure provides an adhesive conductive paste for forming a conductive wiring and/or a joined structure to connect electronic elements, the adhesive conductive paste including a conductive particle and a solvent. The adhesive conductive paste contains, as the conductive particle, a silver particle (A) having an average particle size of 1 nm or greater and less than 100 nm and a silver particle (B) having an average particle size of 0.

Abstract: An object of the present invention is to provide an ink composition for manufacturing an organic semiconductor device, the ink composition allowing an organic semiconductor material with a rigid main chain into an ink having an optimal solute concentration for a single-crystal formation process. The present invention provides an ink composition for manufacturing an organic semiconductor device, the ink composition including at least one solvent selected from Naphthalene Compound (A) and at least one solute. The isomer content of Naphthalene Compound (A) is preferably 2% or less in terms of a percentage for peak area with Naphthalene Compound (A) being 100% in gas chromatography. Naphthalene Compound (A): a compound represented by Formula (a), where in Formula (a), R is as defined in the description.

Abstract: The present invention provides a solvent composition for use in an ink for producing an electronic device using a printing method, the solvent composition being capable of improving the printing accuracy of the ink, being fired at low temperatures, and suppressing the amount of ash remaining after firing to a very low amount. The solvent composition for electronic device production of the present invention is for use in an ink for producing an electronic device by a printing method, and contains a miscible product of: a solvent and a compound represented by Formula (1) below. In Formula (1), R represents the same or different aliphatic hydrocarbon groups having 1 or more carbon atoms.

Abstract: Provided is a composition for manufacturing an organic semiconductor device, the composition enabling formation of an organic semiconductor device that stably shows high carrier mobility. A composition for manufacturing an organic semiconductor device contains 2,3-dihydrobenzofuran as a solvent and an organic semiconductor material below, in which the water content of the solvent is 0.25 wt % or less. The organic semiconductor material: at least one compound selected from the group consisting of a compound represented by formula (1-1), a compound represented by formula (1-2), a compound represented by formula (1-3), a compound represented by formula (1-4), a compound represented by formula (1-5), and a compound represented by formula (1-6).

Abstract: Provided is a solvent for organic transistor production. The solvent has excellent solubility for organic semiconductor materials and enables formation of an organic transistor having high crystallinity. The solvent according to the present invention for organic transistor production includes a solvent A represented by Formula (a). In the formula, Ring Z represents a ring selected from an aromatic carbon ring, a 5- to 7-membered alicyclic carbon ring, and a 5- to 7-membered heterocyclic ring; R1 represents a group selected from oxo, thioxy, —ORa, —SRa, —O(C?O)Ra, —RbO(C?O)Ra, and substituted or unsubstituted amino; and R2 represents a group selected from hydrogen, C1-C7 alkyl, aryl, and —ORa, where R1 and R2 may be linked to each other to form a ring with one or more carbon atoms constituting Ring Z.

Abstract: Solvent or solvent composition for organic transistor production, which is excellent in solubility of an organic semiconductor material, and which can form an organic transistor high in crystallinity. The solvent or solvent composition for organic transistor is a solvent or solvent composition for organic semiconductor material dissolution, and includes a solvent ‘A’ represented by the formula (R1)N(R2)—C(?O)—(R3)N(R4) wherein R1 to R4 are the same or different, and each represents a C1-2 alkyl group, or R1 and R4 may be bound to one another to form a ring together with the —N(R2)—C(?O)—N(R3)— moiety as well as an organic semiconductor material.

Abstract: Provided is an insulating coating composition. The composition is highly safe, in which an organic material to form an insulating film is dissolved highly stably. The composition can form an insulating film by coating, where the insulating film has a low relative permittivity, a high insulation resistance, and high wettability and allows an upper layer to be formed thereon by coating. The insulating coating composition according to the present invention contains a cyclic olefin copolymer and a solvent. The cyclic olefin copolymer is a copolymer between a cyclic olefin and a chain olefin. The solvent includes a compound represented by Formula (1) and having a normal boiling point of 100° C. to lower than 300° C. In Formula (1), Ring Z is a ring selected from a 5- or 6-membered saturated or unsaturated cyclic hydrocarbon and a benzene ring; and R1 is selected from a hydrocarbon group and acyl. Ring Z has a substituent or substituents including the R1O group.

Abstract: Provided is a composition for manufacturing an organic semiconductor device, the composition enabling formation of an organic semiconductor device that stably shows high carrier mobility. A composition for manufacturing an organic semiconductor device contains 2,3-dihydrobenzofuran as a solvent and an organic semiconductor material below, in which the water content of the solvent is 0.25 wt % or less. The organic semiconductor material: at least one compound selected from the group consisting of a compound represented by formula (1-1), a compound represented by formula (1-2), a compound represented by formula (1-3), a compound represented by formula (1-4), a compound represented by formula (1-5), and a compound represented by formula (1-6).