Patents by Inventor Yasuyuki Matsui

Yasuyuki Matsui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090161051
    Abstract: A display device. The display device including a display surface, a plurality of pixel areas, a plurality of sensor areas, an optical filter portion, a light shielding portion, and an arithmetically operating portion.
    Type: Application
    Filed: December 15, 2008
    Publication date: June 25, 2009
    Applicant: SONY CORPORATION
    Inventors: Yoko Fukunaga, Yasuyuki Matsui, Daisuke Takama
  • Publication number: 20060194416
    Abstract: A method of manufacturing single-crystal semiconductor blocks is characterized in that a plurality of single-crystal semiconductor blocks of a relatively small diameter desired by users are cut out from a single-crystal semiconductor block of a relatively large diameter. With this method, there can also be obtained a secondary effect that even if the large-diameter single-crystal semiconductor block includes defective parts, it is possible to use the small-diameter single-crystal semiconductor blocks cut out from parts other than the defective parts.
    Type: Application
    Filed: July 15, 2004
    Publication date: August 31, 2006
    Inventors: Yasuyuki Matsui, Makoto Otsuki
  • Publication number: 20060014383
    Abstract: A method of manufacturing single-crystal semiconductor wafers is characterized in that a plurality of single-crystal semiconductor wafers of a relatively small diameter desired by users are cut out from a single-crystal semiconductor wafer of a relatively large diameter. Therefore, there can also be obtained a secondary effect that even if the large-scale single-crystal semiconductor wafer has defective parts, the small-scale wafers cut out from the non-defective parts can be shipped to the market.
    Type: Application
    Filed: June 10, 2004
    Publication date: January 19, 2006
    Inventors: Makoto Otsuki, Masayuki Nishikawa, Yasuyuki Matsui
  • Patent number: 6716304
    Abstract: A wafer holder for a semiconductor manufacturing apparatus has a high heat conductivity. The wafer holder includes a sintered ceramic piece, a conductive layer such as a heater circuit pattern which can be formed with high precision on at least one surface of the sintered ceramic piece, and a protective layer formed over the conductive layer on the sintered ceramic piece so as to cover a surface of the conductive layer. The protective layer may contain a glass, a non-oxide ceramic such as aluminum nitride or silicon nitride, an oxide of ytterbium, neodymium and calcium, or an oxide of yttrium and aluminum. In a method of manufacturing the wafer holder, a paste containing metal particles is applied on a surface of the sintered ceramic piece and is fired to form a heater circuit pattern as the conductive layer. Then the protective layer is formed on the sintered ceramic piece to cover the surface of the conductive layer.
    Type: Grant
    Filed: December 3, 2002
    Date of Patent: April 6, 2004
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Akira Kuibira, Hirohiko Nakata, Kenjiro Higaki, Masuhiro Natsuhara, Takashi Ishii, Yasuyuki Matsui
  • Publication number: 20030079684
    Abstract: A wafer holder for a semiconductor manufacturing apparatus has a high heat conductivity. The wafer holder includes a sintered ceramic piece, a conductive layer such as a heater circuit pattern which can be formed with high precision on at least one surface of the sintered ceramic piece, and a protective layer formed over the conductive layer on the sintered ceramic piece so as to cover a surface of the conductive layer. The protective layer may contain a glass, a non-oxide ceramic such as aluminum nitride or silicon nitride, an oxide of ytterbium, neodymium and calcium, or an oxide of yttrium and aluminum. In a method of manufacturing the wafer holder, a paste containing metal particles is applied on a surface of the sintered ceramic piece and is fired to form a heater circuit pattern as the conductive layer. Then the protective layer is formed on the sintered ceramic piece to cover the surface of the conductive layer.
    Type: Application
    Filed: December 3, 2002
    Publication date: May 1, 2003
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Akira Kuibira, Hirohiko Nakata, Kenjiro Higaki, Masuhiro Natsuhara, Takashi Ishii, Yasuyuki Matsui
  • Patent number: 6508884
    Abstract: A wafer holder for a semiconductor manufacturing apparatus that has a high heat conductivity and includes a conductive layer such as heater circuit pattern which can be formed with a high precision pattern, a method of manufacturing the wafer holder, and a semiconductor manufacturing apparatus having therein the wafer holder are provided. On a surface of a sintered aluminum nitride piece, paste containing metal particles is applied and fired to form a heater circuit pattern as a conductive layer. Between the surface of the sintered aluminum nitride piece having the heater circuit pattern formed thereon and another sintered aluminum nitride piece, a glass layer is provided as a joint layer to be heated for joining the sintered aluminum nitride pieces together.
    Type: Grant
    Filed: December 19, 2000
    Date of Patent: January 21, 2003
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Akira Kuibira, Hirohiko Nakata, Kenjiro Higaki, Masuhiro Natsuhara, Takashi Ishii, Yasuyuki Matsui
  • Patent number: 6384424
    Abstract: A superconducting thin film pattern (20) formed from an oxide superconducting thin film is formed on a sapphire substrate (10) having a step (11) via a CeO2 buffer layer, and the step (11) and superconducting thin film pattern (20) are formed such that the step (11) crosses a predetermined portion of a square thin film pattern (22) having an opening portion (23) at the central portion. Step-edge Josephson junctions (26, 27) are formed at the portion crossed by the step (11), and a SQUID is obtained. The sapphire substrate is relatively inexpensive, and a large substrate can be used.
    Type: Grant
    Filed: October 11, 2000
    Date of Patent: May 7, 2002
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Hirokazu Kugai, Yasuyuki Matsui, Tatsuoki Nagaishi, Hideo Itozaki
  • Publication number: 20020007911
    Abstract: A wafer holder for a semiconductor manufacturing apparatus that has a high heat conductivity and includes a conductive layer such as heater circuit pattern which can be formed with a high precision pattern, a method of manufacturing the wafer holder, and a semiconductor manufacturing apparatus having therein the wafer holder are provided. On a surface of a sintered aluminum nitride piece, paste containing metal particles is applied and fired to form a heater circuit pattern as a conductive layer. Between the surface of the sintered aluminum nitride piece having the heater circuit pattern formed thereon and another sintered aluminum nitride piece, a glass layer is provided as a joint layer to be heated for joining the sintered aluminum nitride pieces together.
    Type: Application
    Filed: December 19, 2000
    Publication date: January 24, 2002
    Inventors: Akira Kuibira, Hirohiko Nakata, Kenjiro Higaki, Masuhiro Natsuhara, Takashi Ishii, Yasuyuki Matsui