Patents by Inventor Yasuyuki TAKANASHI

Yasuyuki TAKANASHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170170029
    Abstract: This thin film transistor has a gate electrode, a gate insulating film, an oxide semiconductor thin film, an etch stop layer for protecting the oxide semiconductor thin film, a source and drain electrodes, and a passivation film in this order on a substrate. The oxide semiconductor thin film is formed of an oxide configured from In, Ga and Sn as metal elements, and O, and has an amorphous structure, and the etch stop layer and/or the passivation film includes SiNx. The thin film transistor has an extremely high mobility of approximately 40 cm2/Vs or more.
    Type: Application
    Filed: August 6, 2015
    Publication date: June 15, 2017
    Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO(KOBE STEEL, LTD.)
    Inventors: Mototaka OCHI, Yasuyuki TAKANASHI, Aya MIKI, Hiroshi GOTO, Toshihiro KUGIMIYA
  • Patent number: 9660103
    Abstract: This thin film transistor comprises, on a substrate, at least a gate electrode, a gate insulating film, an oxide semiconductor layer, a source-drain electrode, and two or more protective films. The oxide semiconductor layer comprises Sn, O and one or more elements selected from the group consisting of In, Ga and Zn. In addition, the two or more protective films are composed of at least a first protective film that is in contact with the oxide semiconductor film, and one or more second protective films other than the first protective film. The first protective film is a SiOx film having a hydrogen concentration of 3.5 atomic % or lower.
    Type: Grant
    Filed: June 24, 2014
    Date of Patent: May 23, 2017
    Assignee: Kobe Steel, Ltd.
    Inventors: Mototaka Ochi, Shinya Morita, Yasuyuki Takanashi, Hiroshi Goto, Toshihiro Kugimiya
  • Publication number: 20160079437
    Abstract: This thin film transistor comprises, on a substrate, at least a gate electrode, a gate insulating film, an oxide semiconductor layer, a source-drain electrode, and two or more protective films. The oxide semiconductor layer comprises Sn, O and one or more elements selected from the group consisting of In, Ga and Zn. In addition, the two or more protective films are composed of at least a first protective film that is in contact with the oxide semiconductor film, and one or more second protective films other than the first protective film. The first protective film is a SiOx film having a hydrogen concentration of 3.5 atomic % or lower.
    Type: Application
    Filed: June 24, 2014
    Publication date: March 17, 2016
    Applicant: KABUSHIKI KAISHA KOBE SHO (KOBE STEEL, LTD.)
    Inventors: Mototaka OCHI, Shinya MORITA, Yasuyuki TAKANASHI, Hiroshi GOTO, Toshihiro KUGIMIYA
  • Publication number: 20150318400
    Abstract: Provided is a back-channel etch (BCE) thin-film transistor (TFT) without an etch stopper layer, wherein an oxide semiconductor layer of the TFT has excellent resistance to an acid etchant used when forming a source-drain electrode, and has excellent stress stability. The TFT comprises a gate electrode, a gate insulator film, an oxide semiconductor layer, a source-drain electrode, and a passivation film which protects the source-drain electrode, on a substrate. The oxide semiconductor layer comprises one or more elements selected from a group consisting tin, indium, gallium and zinc; and oxygen; and a value in a cross-section in the lamination direction of the TFT, as determined by [100×(the thickness of the oxide semiconductor layer directly below a source-drain electrode end?the thickness in the center portion of the semiconductor layer)/the thickness of the semiconductor layer directly below the source-drain electrode end], is not more than 5%.
    Type: Application
    Filed: December 26, 2013
    Publication date: November 5, 2015
    Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
    Inventors: Shinya MORITA, Mototaka OCHI, Hiroshi GOTO, Toshihiro KUGIMIYA, Kenta HIROSE, Hiroaki TAO, Yasuyuki TAKANASHI