Patents by Inventor Ye Seul Kim

Ye Seul Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140131731
    Abstract: A light-emitting device according to an exemplary embodiment of the present invention includes a first conductivity-type semiconductor layer disposed on a substrate; an active layer disposed on the first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer disposed on the active layer; and an irregular convex-concave pattern disposed on a surface of the first conductivity-type semiconductor layer. The irregular convex-concave pattern includes convex portions and concave portions, and the convex portions have irregular heights and the concave portions have irregular depths. The first conductivity-type semiconductor layer including the irregular convex-concave pattern is exposed from the active layer and the second conductivity-type semiconductor layer.
    Type: Application
    Filed: November 11, 2013
    Publication date: May 15, 2014
    Applicant: Seoul Viosys Co., Ltd.
    Inventors: Ye Seul KIM, Shin Hyoung Kim, Kyoung Wan Kim, Yeo Jin Yoon, Jun Woong Lee, Tae Gyun Kim
  • Publication number: 20140110666
    Abstract: This invention relates to a semiconductor light emitting device which has superior lateral light extraction efficiency, and to a method of manufacturing the same. The semiconductor light emitting device includes a sapphire substrate and a light emitting structure formed on an upper surface of the sapphire substrate and including a plurality of nitride epitaxial layers including an active layer which produces light, wherein at least one side surface of the light emitting structure is formed as an inclined surface which creates an acute angle relative to the upper surface of the sapphire substrate. In some embodiments, at least one modification region can be formed in a horizontal direction on at least one side surface of the sapphire substrate using laser irradiation.
    Type: Application
    Filed: June 15, 2012
    Publication date: April 24, 2014
    Applicant: Seoul Viosys Co., Ltd.
    Inventors: Duck II Suh, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim
  • Publication number: 20130234192
    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
    Type: Application
    Filed: February 28, 2011
    Publication date: September 12, 2013
    Applicant: SEOUL OPTO DEVICE CO., LTD.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
  • Patent number: 8525212
    Abstract: An exemplary embodiment of the present invention discloses a light emitting diode including a lower contact layer having a first edge, a second edge opposite to the first edge, a third edge connecting the first edge to the second edge, and a fourth edge opposite to the third edge, a mesa structure arranged on the lower contact layer, the mesa structure including an active layer and an upper contact layer, a first electrode pad arranged on the lower contact layer, a second electrode pad arranged on the mesa structure, a first lower extension and a second lower extension extending from the first electrode pad towards the second edge, distal ends of the first lower extension and the second lower extension being farther away from each other than front ends thereof contacting the first electrode pad, and a first upper extension, a second upper extension, and a third upper extension extending from the second electrode pad.
    Type: Grant
    Filed: December 7, 2010
    Date of Patent: September 3, 2013
    Assignee: Seoul Opto Device Co., Ltd.
    Inventors: Kyoung Wan Kim, Ye Seul Kim, Jeong Hee Yang, Jae Moo Kim
  • Publication number: 20130213700
    Abstract: Provided is a manufacturing method of an electrode substrate in which a carbon nanotube is strongly bonded on a base by forming a mixed film of the carbon nanotube and a silicon-based organic and inorganic hybrid polymer.
    Type: Application
    Filed: September 28, 2011
    Publication date: August 22, 2013
    Applicant: KOLON INDUSTRIES, INC.
    Inventors: Ye Seul Kim, Jeong Han Kim, Ji Sung Kim, Ki Nam Kwak
  • Publication number: 20130146929
    Abstract: Disclosed is a light emitting diode (LED) comprising a light emitting stacked structure and an electrode structure formed to have a pattern on the light emitting stacked structure. The electrode structure of the LED includes a cluster of reflectors disposed along the pattern on the light emitting stacked structure, and a pad material layer formed to entirely cover the reflectors.
    Type: Application
    Filed: April 5, 2011
    Publication date: June 13, 2013
    Applicant: Seoul Opto Device Co., Ltd.
    Inventors: Ye Seul Kim, Da Yeon Jeong, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh
  • Patent number: 8373188
    Abstract: Exemplary embodiments of the present invention provide light-emitting diodes having a distributed Bragg reflector. A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.
    Type: Grant
    Filed: May 4, 2011
    Date of Patent: February 12, 2013
    Assignee: Seoul Opto Device Co., Ltd.
    Inventors: Duk Il Suh, Jae Moo Kim, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim, Sang Hyun Oh, Jin Woong Lee
  • Publication number: 20120049223
    Abstract: Exemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arranged on the substrate. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including a concave portion and a convex portion is arranged on the second conductivity-type semiconductor layer. A first electrode pad contacts an upper surface of the first conductivity-type semiconductor layer and is located near a center of the first side edge. Two second electrode pads are located near opposite distal ends of the second side edge to supply electric current to the second conductivity-type semiconductor layer.
    Type: Application
    Filed: August 15, 2011
    Publication date: March 1, 2012
    Applicant: SEOUL OPTO DEVICE CO., LTD.
    Inventors: Jeong Hee YANG, Kyoung Wan KIM, Yeo Jin YOON, Ye Seul KIM, Sang Hyun OH, Duk Il SUH, Keum Ju LEE, Jin Woong LEE, Da Yeon JEONG
  • Publication number: 20120025244
    Abstract: Exemplary embodiments of the present invention provide light-emitting diodes having a distributed Bragg reflector. A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.
    Type: Application
    Filed: May 4, 2011
    Publication date: February 2, 2012
    Applicant: SEOUL OPTO DEVICE CO., LTD.
    Inventors: Duk Il SUH, Jae Moo KIM, Kyoung Wan KIM, Yeo Jin YOON, Ye Seul KIM, Sang Hyun OH, Jin Woong LEE
  • Publication number: 20110156086
    Abstract: An exemplary embodiment of the present invention discloses a light emitting diode including a lower contact layer having a first edge, a second edge opposite to the first edge, a third edge connecting the first edge to the second edge, and a fourth edge opposite to the third edge, a mesa structure arranged on the lower contact layer, the mesa structure including an active layer and an upper contact layer, a first electrode pad arranged on the lower contact layer, a second electrode pad arranged on the mesa structure, a first lower extension and a second lower extension extending from the first electrode pad towards the second edge, distal ends of the first lower extension and the second lower extension being farther away from each other than front ends thereof contacting the first electrode pad, and a first upper extension, a second upper extension, and a third upper extension extending from the second electrode pad.
    Type: Application
    Filed: December 7, 2010
    Publication date: June 30, 2011
    Applicant: SEOUL OPTO DEVICE CO., LTD.
    Inventors: Kyoung Wan KIM, Ye Seul KIM, Jeong Hee YANG, Jae Moo KIM