Patents by Inventor Yen-Huei Chen

Yen-Huei Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200020371
    Abstract: The present disclosure describes various exemplary memory storage devices that can be programmed to bypass one or more memory cells in a bypass mode of operation. The various exemplary memory storage devices can adjust, for example, pull-up or pull-down, the electronic data as the electronic data passes through these exemplary memory storage devices in the bypass mode of operation. In some situations, the various exemplary memory storage devices may introduce an unwanted bias into the electronic data as the electronic data passes through these exemplary memory storage devices in the bypass mode of operation. The various exemplary memory storage devices can pull-down the electronic data and/or pull-up the electronic data as the electronic data is passing through these exemplary memory storage devices in the bypass mode of operation to compensate for this unwanted bias.
    Type: Application
    Filed: July 3, 2019
    Publication date: January 16, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.
    Inventors: Hidehiro FUJIWARA, Yen-Huei CHEN
  • Patent number: 10535658
    Abstract: Some embodiments relate to a memory device including first and second conductive lines extending generally in parallel with one another within over a row of memory cells. A centerline extends generally in parallel with the first and second conductive lines and is spaced between the first and second conductive lines. A first plurality of conductive line segments is over the first conductive line. Conductive line segments of the first plurality of conductive line segments are coupled to different locations on the first conductive line. A second plurality of conductive line segments are disposed over the second conductive line, and are coupled to different locations on the second conductive line.
    Type: Grant
    Filed: August 22, 2018
    Date of Patent: January 14, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Sahil Preet Singh, Yen-Huei Chen
  • Patent number: 10529415
    Abstract: A semiconductor memory device includes an array of memory cells arranged in a plurality of rows and columns, with each memory cell including a plurality of bit cell transistors. The semiconductor memory device further includes a plurality of write assist circuits, including one or more write assist circuits within each column of the array of memory cells, each write assist circuit configured to provide a core voltage to memory cells within the same column and to reduce the core voltage during a write operation. The array of memory cells and the plurality of write assist circuits have a common semiconductor layout.
    Type: Grant
    Filed: June 10, 2019
    Date of Patent: January 7, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Sahil Preet Singh, Yen-Huei Chen, Hung-Jen Liao
  • Publication number: 20200005877
    Abstract: A write line circuit includes a power supply node configured to carry a power supply voltage level, a reference node configured to carry a reference voltage level, a first input node configured to receive a first data signal, a second input node configured to receive a second data signal, a third input node configured to receive a control signal, and an output node. The write line circuit is configured to, responsive to the first data signal, the second data signal, and the control signal, either output one of the power supply voltage level or the reference voltage level on the output node, or float the output node.
    Type: Application
    Filed: November 29, 2018
    Publication date: January 2, 2020
    Inventors: Manish ARORA, Hung-Jen LIAO, Yen-Huei CHEN, Nikhil PURI, Yu-Hao HSU
  • Publication number: 20200005859
    Abstract: A circuit includes a memory array, a write circuit configured to store data in memory cells of the memory array, a read circuit configured to retrieve the stored data from the memory cells of the memory array, and a computation circuit configured to perform one or more logic operations on the retrieved stored data. The memory array is positioned between the write circuit and the read circuit.
    Type: Application
    Filed: May 7, 2019
    Publication date: January 2, 2020
    Inventors: Yen-Huei CHEN, Hidehiro FUJIWARA, Hung-Jen LIAO, Jonathan Tsung-Yung CHANG
  • Publication number: 20200005858
    Abstract: A read assist circuit is disclosed that selectively provides read assistance to a number of memory cells during a read operation of the number of memory cells. The read assist circuit includes a voltage divider circuit and a number of write line driver circuits. The voltage divider circuit is configured to voltage-divide a power supply voltage and provide a source write line voltage at an output of the voltage divider circuit to the number of write line driver circuits. Each write line driver circuit is configured to receive the source write line voltage and selectively apply the source write line voltage to a corresponding write line according to a corresponding individual enable signal that controls each write driver circuit. Further, each write line driver circuit is coupled to a corresponding memory cell of the number of memory cells via the corresponding write line so that the corresponding write line provides a corresponding write line voltage to provide read assistance during the read operation.
    Type: Application
    Filed: April 5, 2019
    Publication date: January 2, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hidehiro FUJIWARA, Hung-Jen LIAO, Hsien-Yu PAN, Chih-Yu LIN, Yen-Huei CHEN, Sahil Preet SINGH
  • Publication number: 20190393228
    Abstract: A device is disclosed that includes a memory bit cell coupled to a bit line, a word line, a pair of metal islands and a pair of connection metal lines. The word line is electrically coupled to the memory bit cell and is elongated in a first direction. The pair of metal islands are disposed at opposite sides of the word line and are electrically coupled to a power supply. The pair of connection metal lines are elongated in a second direction, and are configured to electrically couple the pair of metal islands to the memory bit cell, respectively. The pair of connection metal lines are separated from the bit line in a layout view. A method of fabricating the device is also provided.
    Type: Application
    Filed: September 5, 2019
    Publication date: December 26, 2019
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hidehiro FUJIWARA, Wei-Min CHAN, Chih-Yu LIN, Yen-Huei CHEN, Hung-Jen LIAO
  • Publication number: 20190385671
    Abstract: A memory macro system may be provided. The memory macro system may comprise a first segment, a second segment, a first WL, and a second WL. The first segment may comprise a first plurality of memory cells. The second segment may comprise a second plurality of memory cells. The first segment may be positioned over the second segment. The first WL may correspond to the first segment and the second WL may correspond to the second segment. The first WL and the second WL may be configured to be activated in one cycle.
    Type: Application
    Filed: June 7, 2019
    Publication date: December 19, 2019
    Inventors: Hidehiro Fujiwara, Hsien-Yu Pan, Chih-Yu Lin, Yen-Huei Chen, Wei-Chang Zhao
  • Publication number: 20190385672
    Abstract: A twelve-transistor (12T) memory cell for a memory device that includes a transmission gate, a cross-coupled inverter circuit operably connected to the transmission gate, and a tri-state inverter operably connected to the cross-coupled inverter circuit. The cross-coupled inverter includes another tri-state inverter cross-coupled to an inverter circuit. Various operations for the 12T memory cell, as well as circuitry to perform the operations, are disclosed.
    Type: Application
    Filed: May 17, 2019
    Publication date: December 19, 2019
    Inventors: Mahmut Sinangil, Yen-Huei Chen, Yen-Ting Lin, Hung-Jen Liao, Jonathan Tsung-Yung Chang
  • Patent number: 10510403
    Abstract: In some embodiments, a semiconductor memory device includes an array of semiconductor memory cells arranged in rows and columns. The array includes a first segment of memory cells and a second segment of memory cells. A first pair of complementary local bit lines extend over the first segment of memory cells and is coupled to multiple memory cells along a first column within the first segment of memory cells. A second pair of complementary local bit lines extend over the second segment of memory cells and is coupled to multiple memory cells along the first column within the second segment of memory cells. A pair of switches is arranged between the first and second segments of memory cells. The pair of switches is configured to selectively couple the first pair of complementary local bit lines in series with the second pair of complementary local bit lines.
    Type: Grant
    Filed: December 6, 2018
    Date of Patent: December 17, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Mahmut Sinangil, Hidehiro Fujiwara, Hung-Jen Liao, Jonathan Tsung-Yung Chang, Yen-Huei Chen, Sahil Preet Singh
  • Patent number: 10510739
    Abstract: A method of providing a layout design of an SRAM cell includes: providing a substrate layout comprising a first oxide diffusion area, a second oxide diffusion area, a first polysilicon layout, and a second polysilicon layout, wherein the first polysilicon layout extends across the first oxide diffusion area and the second oxide diffusion area, and the second polysilicon layout extends across the first oxide diffusion area and the second oxide diffusion area; forming a first pull-up transistor on the first oxide diffusion area and the first polysilicon layout; forming a first pull-down transistor on the second oxide diffusion area and the first polysilicon layout; forming a second pull-up transistor on the first oxide diffusion area and the second polysilicon layout; and forming a second pull-down transistor on the second oxide diffusion area and second first polysilicon layout.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: December 17, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Hidehiro Fujiwara, Tetsu Ohtou, Chih-Yu Lin, Hsien-Yu Pan, Yasutoshi Okuno, Yen-Huei Chen
  • Patent number: 10490267
    Abstract: A bit line architecture for dual-port static random-access memory (DP SRAM) is provided. An array of memory cells is arranged in rows and columns, and comprises a first subarray and a second subarray. A first pair of complementary bit lines (CBLs) extends along a column, from a first side of the array, and terminates between the first and second subarrays. A second pair of CBLs extends from the first side of the array, along the column, to a second side of the array. The CBLs of the second pair of CBLs have stepped profiles between the first and second subarrays. A third pair of CBLs and a fourth pair of CBLs extend along the column. The first and third pairs of CBLs electrically couple to memory cells in the first subarray, and the second and fourth pairs of CBLs electrically couple to memory cells in the second subarray.
    Type: Grant
    Filed: December 6, 2018
    Date of Patent: November 26, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Sahil Preet Singh, Jung-Hsuan Chen, Yen-Huei Chen, Avinash Chander, Albert Ying
  • Publication number: 20190341346
    Abstract: A method of designing a memory circuit is provided that includes generating a layout of a first memory cell using an integrated circuit design system. The layout of the first memory cell is generated by routing a first word line in a first layer on a first level, and routing a second word line in the first layer. Also, the method includes generating a layout of a second memory cell using the integrated circuit design system. The layout of the second memory cell is generated by routing a third word line in the first layer, the second word line being between the first word line and the third word line, and routing a fourth word line in the first layer, the third word line being between the second word line and the fourth word line. Moreover, the method includes assigning a first color scheme to the first word line and to the third word line, and assigning a second color scheme to the second word line and to the fourth word line.
    Type: Application
    Filed: July 15, 2019
    Publication date: November 7, 2019
    Inventors: Hidehiro FUJIWARA, Li-Wen WANG, Yen-Huei CHEN, Hung-Jen LIAO
  • Publication number: 20190326302
    Abstract: A memory circuit including: a first column of memory cells, each memory cell of the first column including a first supply segment; a first supply voltage line in a first conductive layer, the first supply voltage line being made of at least the first supply segments of the first column; a second supply voltage line; a first resistive device electrically connecting the first and second supply voltage lines, and being located in a via layer; a first material, from which the first resistive device is formed, being different than a second material from which a first type of via plug in the via layer is formed; and a supply voltage source electrically coupled with first supply voltage line through one or more conductive paths, and the second supply voltage line and the first resistive device being in a lowest resistance path of the one or more conductive paths.
    Type: Application
    Filed: July 1, 2019
    Publication date: October 24, 2019
    Inventors: Yen-Huei Chen, Hung-Jen Liao, Chih-Yu Lin, Jonathan Tsung-Yung Chang, Wei-Cheng Wu
  • Patent number: 10431295
    Abstract: A static random access memory (SRAM) that includes a memory cell comprising at least two p-type pass gates. The SRAM also includes a first data line connected to the memory cell, a second data line connected to the memory cell and a voltage control unit connected to the first data line, wherein the voltage control unit is configured to control the memory cell.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: October 1, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Li-Wen Wang, Chih-Yu Lin, Yen-Huei Chen, Hung-Jen Liao
  • Publication number: 20190295632
    Abstract: A semiconductor memory device includes an array of memory cells arranged in a plurality of rows and columns, with each memory cell including a plurality of bit cell transistors. The semiconductor memory device further includes a plurality of write assist circuits, including one or more write assist circuits within each column of the array of memory cells, each write assist circuit configured to provide a core voltage to memory cells within the same column and to reduce the core voltage during a write operation. The array of memory cells and the plurality of write assist circuits have a common semiconductor layout.
    Type: Application
    Filed: June 10, 2019
    Publication date: September 26, 2019
    Inventors: Sahil Preet Singh, Yen-Huei Chen, Hung-Jen Liao
  • Patent number: 10411019
    Abstract: A device is disclosed that includes a memory bit cell, a first word line, a pair of metal islands and a pair of connection metal lines. The first word line is disposed in a first metal layer and is electrically coupled to the memory bit cell. The pair of metal islands are disposed in the first metal layer at opposite sides of the word line and are electrically coupled to a power supply. The pair of connection metal lines are disposed in a second metal layer and are configured to electrically couple the metal islands to the memory bit cell respectively.
    Type: Grant
    Filed: June 18, 2016
    Date of Patent: September 10, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hidehiro Fujiwara, Wei-Min Chan, Chih-Yu Lin, Yen-Huei Chen, Hung-Jen Liao
  • Publication number: 20190259432
    Abstract: A memory macro includes a first memory cell array, first tracking circuit, first pre-charge circuit coupled to a first end of the first tracking bit line and a second pre-charge circuit coupled to a second end of the first tracking bit line. The first tracking circuit includes a first set of memory cells configured as a first set of loading cells responsive to a first set of control signals, a second set of memory cells configured as a first set of pull-down cells responsive to a second set of control signals, and a first tracking bit line. The first set of pull-down cells and first set of loading cells are configured to track a memory cell of the first memory cell array. The first and second pre-charge circuit are configured to charge the first tracking bit line to a voltage level responsive to a third set of control signals.
    Type: Application
    Filed: May 6, 2019
    Publication date: August 22, 2019
    Inventors: Chien-Kuo SU, Cheng Hung LEE, Chiting CHENG, Hung-Jen LIAO, Jonathan Tsung-Yung CHANG, Yen-Huei CHEN, Pankaj AGGARWAL, Jhon Jhy LIAW
  • Patent number: 10373964
    Abstract: A method, of writing to a memory cell, includes: causing a pulling device of the memory cell to pull a voltage level at a first data node of the memory cell toward a first supply voltage level responsive to a voltage level at a second data node of the memory cell; causing a pass gate of the memory cell to pull the voltage level at the first data node of the memory cell toward a second supply voltage level responsive to a word line signal, the second supply voltage level being different from the first supply voltage level; and limiting a driving capability of the pulling device by a resistive device, the resistive device being electrically coupled between the pulling device and a supply voltage source configured to provide a first supply voltage, the first supply voltage having the first supply voltage level.
    Type: Grant
    Filed: January 8, 2018
    Date of Patent: August 6, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Huei Chen, Hung-Jen Liao, Chih-Yu Lin, Jonathan Tsung-Yung Chang, Wei-Cheng Wu
  • Publication number: 20190237134
    Abstract: Some embodiments relate to an SRAM cell layout including upper and lower cell edges and left and right cell edges. A first power rail extends generally in parallel with and lies along the left cell edge or the right cell edge. The first power rail is coupled to a first power supply. A second power rail extends generally in parallel with the first power rail and is arranged equidistantly between the left and right cell edges. A first bitline extends in parallel with the first power rail and the second power rail and is arranged to a first side of the second power rail. A second bitline, which is complementary to the first bitline, extends in parallel with the first power rail and the second power rail and is arranged to a second side of the second power rail.
    Type: Application
    Filed: April 5, 2019
    Publication date: August 1, 2019
    Inventors: Hidehiro Fujiwara, Hung-Jen Liao, Hsien-Yu Pan, Yen-Huei Chen, Mahmut Sinangil