Abstract: An electronic component includes: a multilayer capacitor including a capacitor body and a pair of external electrodes, respectively disposed on external surfaces of the capacitor body in a first direction; and an interposer disposed below the multilayer capacitor and including an interposer body, a pair of via holes penetrating through the interposer body, and a pair of via electrodes, respectively disposed in the via holes to be connected to the pair of external electrodes, respectively. 0.24T?t?0.3T, where “T” is a maximum height of the multilayer capacitor and “t” is a maximum height of the interposer.

Abstract: The present invention provides a silicon nanowire structure embedded in nickel silicide nanowires for lithium-based battery anodes and anodes including the same. In particular, a Si nanowire structure embedded in NiSix nanowires according to the present invention may provide a solution to a problem, such as disconnection of Si nanowires from a current collector shown when the Si nanowires are expanded by alloying with Li or contracted during the use of a battery, and the like, by flexibly embedding the Si nanowires in the NiSix nanowires.

Abstract: The present invention provides a silicon nanowire structure embedded in nickel silicide nanowires for lithium-based battery anodes and anodes including the same. In particular, a Si nanowire structure embedded in NiSix nanowires according to the present invention may provide a solution to a problem, such as disconnection of Si nanowires from a current collector shown when the Si nanowires are expanded by alloying with Li or contracted during the use of a battery, and the like, by flexibly embedding the Si nanowires in the NiSix nanowires.

Abstract: The present invention provides a silicon nanowire structure embedded in nickel silicide nanowires for lithium-based battery anodes and anodes including the same. In particular, a Si nanowire structure embedded in NiSix nanowires according to the present invention may provide a solution to a problem, such as disconnection of Si nanowires from a current collector shown when the Si nanowires are expanded by alloying with Li or contracted during the use of a battery, and the like, by flexibly embedding the Si nanowires in the NiSix nanowires.

Abstract: In a method, an isolation layer pattern is formed on a substrate to define first and second active fins. An ARC layer is formed on the isolation layer pattern to at least partially cover sidewalls of the first and second active fins. A level of a top surface of the ARC layer is equal to or less than, and equal to or greater than half of, those of the first and second active fins. A photoresist layer is formed on the first and second active fins and the ARC layer. A portion of the photoresist layer is removed to form a photoresist pattern covering the first active fin and exposing the second active fin. A portion of the ARC layer under the removed portion of the photoresist layer is removed to form an ARC layer pattern. Impurities are implanted into the exposed second active fin to form an impurity region.

Abstract: In a method, an isolation layer pattern is formed on a substrate to define first and second active fins. An ARC layer is formed on the isolation layer pattern to at least partially cover sidewalls of the first and second active fins. A level of a top surface of the ARC layer is equal to or less than, and equal to or greater than half of, those of the first and second active fins. A photoresist layer is formed on the first and second active fins and the ARC layer. A portion of the photoresist layer is removed to form a photoresist pattern covering the first active fin and exposing the second active fin. A portion of the ARC layer under the removed portion of the photoresist layer is removed to form an ARC layer pattern. Impurities are implanted into the exposed second active fin to form an impurity region.

Abstract: The present invention provides a silicon nanowire structure embedded in nickel silicide nanowires for lithium-based battery anodes and anodes including the same. In particular, a Si nanowire structure embedded in NiSix nanowires according to the present invention may provide a solution to a problem, such as disconnection of Si nanowires from a current collector shown when the Si nanowires are expanded by alloying with Li or contracted during the use of a battery, and the like, by flexibly embedding the Si nanowires in the NiSix nanowires.