Patents by Inventor Yeon-Ho Khang

Yeon-Ho Khang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase change memory devices and fabrication methods thereof
    Publication number: 20090039338
    Abstract: In a memory device, at least one conductive contact having a width of less than, or equal to, about 30 nm may be formed on a first electrode. A dielectric layer may be formed on the sides of the at least one conductive contact, and a phase change material film may be formed on the conductive contact. A second electrode may be formed on the phase change material.
    Type: Application
    Filed: October 8, 2008
    Publication date: February 12, 2009
    Inventors: Dong-Seok Suh, Yeon-Ho Khang, VassIII Leniachine, Mi-Jeong Song, Sergey Antonov
  • Phase change memory devices and fabrication methods thereof
    Patent number: 7449360
    Abstract: In a memory device, at least one conductive contact having a width of less than, or equal to, about 30 nm may be formed on a first electrode. A dielectric layer may be formed on the sides of the at least one conductive contact, and a phase change material film may be formed on the conductive contact. A second electrode may be formed on the phase change material.
    Type: Grant
    Filed: January 23, 2006
    Date of Patent: November 11, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Seok Suh, Yeon-Ho Khang, Vassill Leniachine, Mi-Jeong Song, Sergey Antonov
  • Phase change memory devices and fabrication methods thereof
    Publication number: 20060180803
    Abstract: In a memory device, at least one conductive contact having a width of less than, or equal to, about 30 nm may be formed on a first electrode. A dielectric layer may be formed on the sides of the at least one conductive contact, and a phase change material film may be formed on the conductive contact. A second electrode may be formed on the phase change material.
    Type: Application
    Filed: January 23, 2006
    Publication date: August 17, 2006
    Inventors: Dong-Seok Suh, Yeon-Ho Khang, Vassill Leniachine, Mi-Jeong Song, Sergey Antonov