Patents by Inventor Yezdi N. Dordi

Yezdi N. Dordi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140256142
    Abstract: A method for etching an etch layer is provided. A glue layer having metallizable terminations is formed over the etch layer. The glue layer is exposed to a patterned light, wherein the metallizable terminations of the glue layer illuminated by the patterned light become unmetallizable. A metal deposition layer is formed on the glue layer, wherein the metal deposition layer only deposits on areas of the glue layer with metallizable terminations of the glue layer. The etch layer is etched through portions of the glue layer without the metal deposition layer.
    Type: Application
    Filed: March 8, 2013
    Publication date: September 11, 2014
    Applicant: Lam Research Corporation
    Inventor: Yezdi N. DORDI
  • Patent number: 8822344
    Abstract: A method for etching an etch layer is provided. A glue layer having metallizable terminations is formed over the etch layer. The glue layer is exposed to a patterned light, wherein the metallizable terminations of the glue layer illuminated by the patterned light become unmetallizable. A metal deposition layer is formed on the glue layer, wherein the metal deposition layer only deposits on areas of the glue layer with metallizable terminations of the glue layer. The etch layer is etched through portions of the glue layer without the metal deposition layer.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: September 2, 2014
    Assignee: Lam Research Corporation
    Inventor: Yezdi N. Dordi
  • Publication number: 20140145334
    Abstract: Methods and apparatuses for fabricating three-dimensional integrated circuits having through hole vias are provided. One aspect of the present invention is a method of gapfill for through hole vias for three-dimensional integrated circuits. The method comprises providing a semiconductor wafer having a plurality of holes for through hole vias and depositing a conformal metal layer to partially fill the holes to leave open voids. The method also includes purging the voids and cleaning the surface of the voids and using a dry deposition process to fill or close the voids. Another aspect of the present invention is an electronic device structure for a three-dimensional integrated circuit.
    Type: Application
    Filed: January 29, 2014
    Publication date: May 29, 2014
    Inventors: John BOYD, Fritz REDEKER, Yezdi N. DORDI, Hyungsuk Alexander YOON, Shijian LI
  • Patent number: 8524329
    Abstract: A method for providing electroless plating is provided. An amorphous carbon barrier layer is formed over the low-k dielectric layer by providing a flow a deposition gas, comprising a hydrocarbon, H2, and an oxygen free diluent, forming a plasma from the deposition gas, and stopping the flow of the deposition gas. The amorphous carbon barrier layer is conditioned by providing a flow of a conditioning gas comprising H2 and a diluent, forming a plasma from the conditioning gas, which conditions a top surface of the amorphous carbon barrier layer, and stopping the flow of the conditioning gas. The amorphous carbon barrier layer is functionalized by providing a flow of a functionalizing gas comprising NH3 or H2 and N2, forming a plasma from the functionalizing gas, and stopping the flow of the functionalizing gas. An electroless process is provided to form an electrode over the barrier layer.
    Type: Grant
    Filed: December 13, 2011
    Date of Patent: September 3, 2013
    Assignee: Lam Research Corporation
    Inventors: Yezdi N. Dordi, Richard P. Janek, Dries Dictus
  • Publication number: 20130149461
    Abstract: A method for providing electroless plating is provided. An amorphous carbon barrier layer is formed over the low-k dielectric layer by providing a flow a deposition gas, comprising a hydrocarbon, H2, and an oxygen free diluent, forming a plasma from the deposition gas, and stopping the flow of the deposition gas. The amorphous carbon barrier layer is conditioned by providing a flow of a conditioning gas comprising H2 and a diluent, forming a plasma from the conditioning gas, which conditions a top surface of the amorphous carbon barrier layer, and stopping the flow of the conditioning gas. The amorphous carbon barrier layer is functionalized by providing a flow of a functionalizing gas comprising NH3 or H2 and N2, forming a plasma from the functionalizing gas, and stopping the flow of the functionalizing gas. An electroless process is provided to form an electrode over the barrier layer.
    Type: Application
    Filed: December 13, 2011
    Publication date: June 13, 2013
    Applicant: Lam Research Corporation
    Inventors: Yezdi N. DORDI, Richard P. JANEK, Dries DICTUS
  • Patent number: 8221608
    Abstract: Methods for plating substrates are herein defined. One method includes providing a plating assembly having a plating source in a plating fluid and a plating facilitator in the plating fluid, and defining a plating meniscus between the plating source and the plating facilitator. The plating meniscus being contained in a path of the plating assembly. The method further includes traversing a substrate through the path of the plating assembly. The substrate being charged so that plating ions are attracted to a surface of the substrate when the plating meniscus is present on the surface of the substrate, wherein the substrate traversing through the path of the plating assembly enables plating across the surface of the substrate. And, inducing a uniform charge in the path where the plating meniscus is formed, such that charge from the plating source is substantially uniformly directed toward the plating facilitator as the substrate that is charged moves through the path of the plating assembly.
    Type: Grant
    Filed: October 6, 2010
    Date of Patent: July 17, 2012
    Assignee: Lam Research Corporation
    Inventors: Carl A. Woods, Yezdi N. Dordi, Jacob Wylie, Robert Maraschin
  • Patent number: 8084356
    Abstract: An integrated process for forming metallization layers for electronic devices that use damascene structures that include low-k dielectric and metal. According to one embodiment of the present invention, the integrated process includes planarizing a gapfill metal in low-k dielectric structures, generating a protective layer on the low-k dielectric followed by cleaning the surface of the gapfill metal. Another embodiment of the present invention includes a method of protecting low-k dielectrics such as carbon doped silicon oxide.
    Type: Grant
    Filed: September 17, 2008
    Date of Patent: December 27, 2011
    Assignee: Lam Research Corporation
    Inventors: Yezdi N. Dordi, Arthur M. Howald
  • Publication number: 20110155563
    Abstract: An electroplating apparatus for depositing a metallic layer on a surface of a wafer is provided. In one example, a proximity head capable of being electrically charged as an anode is placed in close proximity to the surface of the wafer. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating.
    Type: Application
    Filed: March 8, 2011
    Publication date: June 30, 2011
    Applicant: Lam Research Corp.
    Inventors: Mike Ravkin, John Boyd, Yezdi N. Dordi, Fred C. Redeker, John M. de Larios
  • Patent number: 7947157
    Abstract: An electroplating apparatus for depositing a metallic layer on a surface of a wafer is provided. In one example, a proximity head capable of being electrically charged as an anode is placed in close proximity to the surface of the wafer. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating.
    Type: Grant
    Filed: July 28, 2006
    Date of Patent: May 24, 2011
    Assignee: Lam Research Corporation
    Inventors: Mike Ravkin, John Boyd, Yezdi N. Dordi, Fred C. Redeker, John M. de Larios
  • Publication number: 20110017605
    Abstract: Methods for plating substrates are herein defined. One method includes providing a plating assembly having a plating source in a plating fluid and a plating facilitator in the plating fluid, and defining a plating meniscus between the plating source and the plating facilitator. The plating meniscus being contained in a path of the plating assembly. The method further includes traversing a substrate through the path of the plating assembly. The substrate being charged so that plating ions are attracted to a surface of the substrate when the plating meniscus is present on the surface of the substrate, wherein the substrate traversing through the path of the plating assembly enables plating across the surface of the substrate. And, inducing a uniform charge in the path where the plating meniscus is formed, such that charge from the plating source is substantially uniformly directed toward the plating facilitator as the substrate that is charged moves through the path of the plating assembly.
    Type: Application
    Filed: October 6, 2010
    Publication date: January 27, 2011
    Inventors: Carl A. Woods, Yezdi N. Dordi, Jacob Wylie, Robert Maraschin
  • Patent number: 7862693
    Abstract: An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.
    Type: Grant
    Filed: September 4, 2009
    Date of Patent: January 4, 2011
    Assignee: Lam Research Corporation
    Inventors: Yezdi N. Dordi, Fred C. Redeker, John M. Boyd, Robert Maraschin, Carl Woods
  • Patent number: 7811423
    Abstract: A plating assembly for use in plating metallic materials onto a surface of a substrate is provided. The plating assembly comprising a delivery unit having a fluid chamber, a metallic source, and a porous insert. The plating assembly also comprising a receiving unit having a fluid chamber and a metallic receiver. The receiving unit also has a porous insert. The porous insert of the delivery unit being substantially aligned with, and spaced apart from, the porous insert of the receiving unit. The metallic receiver being substantially aligned with the porous insert of the delivery unit and a path being defined between the delivery unit and the receiving unit. Wherein a plating meniscus is capable of being defined in the path between the porous inserts of the delivery unit and the receiving unit and a substrate is capable of being moved through the plating meniscus to enable the plating of metallic materials onto the surface of the substrate. Examples for de-plating are also provided.
    Type: Grant
    Filed: October 6, 2006
    Date of Patent: October 12, 2010
    Assignee: Lam Research Corporation
    Inventors: Carl A. Woods, Yezdi N. Dordi, Jacob Wylie, Robert Maraschin
  • Patent number: 7645364
    Abstract: An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.
    Type: Grant
    Filed: June 30, 2004
    Date of Patent: January 12, 2010
    Assignee: Lam Research Corporation
    Inventors: Yezdi N. Dordi, Fred C. Redeker, John M. Boyd, Robert Maraschin, Carl Woods
  • Publication number: 20090321250
    Abstract: An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.
    Type: Application
    Filed: September 4, 2009
    Publication date: December 31, 2009
    Applicant: Lam Research Corp.
    Inventors: Yezdi N. Dordi, Fred C. Redeker, John M. Boyd, Robert Maraschin, Carl Woods
  • Publication number: 20090087980
    Abstract: An integrated process for forming metallization layers for electronic devices that use damascene structures that include low-k dielectric and metal. According to one embodiment of the present invention, the integrated process includes planarizing a gapfill metal in low-k dielectric structures, generating a protective layer on the low-k dielectric followed by cleaning the surface of the gapfill metal. Another embodiment of the present invention includes a method of protecting low-k dielectrics such as carbon doped silicon oxide.
    Type: Application
    Filed: September 17, 2008
    Publication date: April 2, 2009
    Inventors: Yezdi N. DORDI, Arthur M. Howald
  • Publication number: 20080296166
    Abstract: A plating assembly for use in plating metallic materials onto a surface of a substrate is provided. The plating assembly comprising a delivery unit having a fluid chamber, a metallic source, and a porous insert. The plating assembly also comprising a receiving unit having a fluid chamber and a metallic receiver. The receiving unit also has a porous insert. The porous insert of the delivery unit being substantially aligned with, and spaced apart from, the porous insert of the receiving unit. The metallic receiver being substantially aligned with the porous insert of the delivery unit and a path being defined between the delivery unit and the receiving unit. Wherein a plating meniscus is capable of being defined in the path between the porous inserts of the delivery unit and the receiving unit and a substrate is capable of being moved through the plating meniscus to enable the plating of metallic materials onto the surface of the substrate. Examples for de-plating are also provided.
    Type: Application
    Filed: October 6, 2006
    Publication date: December 4, 2008
    Inventors: Carl A. Woods, Yezdi N. Dordi, Jacob Wylie, Robert Maraschin
  • Publication number: 20080271992
    Abstract: An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.
    Type: Application
    Filed: June 30, 2004
    Publication date: November 6, 2008
    Applicant: Lam Research Corp.
    Inventors: Yezdi N. Dordi, Fred C. Redeker, John M. Boyd, Robert Maraschin, Carl Woods
  • Patent number: 7427338
    Abstract: An apparatus comprising an electrolyte cell, an anode, and a porous rigid diffuser. The electrolyte cell is configured to receive a substrate to have a metal film deposited thereon. An anode is contained within the electrolyte cell. A porous rigid diffuser is connected to the electrolyte cell and extends across the electrolyte cell. The diffuser is positioned between a location that the substrate is to be positioned when the metal film is deposited thereon and the anode.
    Type: Grant
    Filed: June 30, 2003
    Date of Patent: September 23, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Yezdi N. Dordi, Joseph J. Stevens, H. Peter W. Hey, Donald J. K. Olgado
  • Patent number: 7153400
    Abstract: An electroplating apparatus for depositing a metallic layer on a surface of a wafer is provided. In one example, a proximity head capable of being electrically charged as an anode is placed in close proximity to the surface of the wafer. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating.
    Type: Grant
    Filed: June 27, 2003
    Date of Patent: December 26, 2006
    Assignee: Lam Research Corporation
    Inventors: Mike Ravkin, John Boyd, Yezdi N. Dordi, Fred C. Redeker, John M. de Larios
  • Patent number: 6837978
    Abstract: A method and associated apparatus for electro-chemically depositing a metal film on a substrate having a metal seed layer. The apparatus comprises a substrate holder that holds the substrate. The electrolyte cell receives the substrate in a processing position. The actuator is connected to the substrate holder and adjustably positions the substrate relative to the electrolyte cell. The method involves electro-chemically depositing a metal film on a substrate having a metal seed layer comprising disposing the substrate in an electrolyte cell that is configured to receive the substrate. The method comprises adjustably positioning the substrate relative to the electrolyte cell.
    Type: Grant
    Filed: October 12, 2000
    Date of Patent: January 4, 2005
    Assignee: Applied Materials, Inc.
    Inventors: H. Peter W. Hey, Yezdi N. Dordi, Donald J. K. Olgado, Mark Denome