Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: The present disclosure describes a method for forming metallization layers that include a ruthenium metal liner and a cobalt metal fill. The method includes depositing a first dielectric on a substrate having a gate structure and source/drain (S/D) structures, forming an opening in the first dielectric to expose the S/D structures, and depositing a ruthenium metal on bottom and sidewall surfaces of the opening. The method further includes depositing a cobalt metal on the ruthenium metal to fill the opening, reflowing the cobalt metal, and planarizing the cobalt and ruthenium metals to form S/D conductive structures with a top surface coplanar with a top surface of the first dielectric.

Abstract: A light emitting diode package includes a metallic frame, and an LED chip disposed on the metallic frame. The metallic frame includes first and second metal plates arranged side by side with a space therebetween, and two support arms extending integrally and respectively from two opposite ends of the second metal plate to a level higher than the second top surface and that further extend toward the first metal plate at a level higher than the first top surface crossing the space. The support arms are not in contact with the first metal plate. An encapsulant encapsulates the metallic frame and the LED chip. At least a region of the encapsulant that covers the LED chip is transparent.

Abstract: The present invention relates to an LED device, which includes a metallic frame, an LED chip, and a packaging body. The metallic frame includes a first lead frame and a second lead frame. The first lead frame has a protruding portion extending toward the second lead frame, while the second lead frame has a notch formed correspondingly to the protruding portion. An electrically insulated region is cooperatively defined by the first and second lead frames. The metallic frame defines at least one blind hole in proximate to the electrically insulated region. The LED chip is electrically connected to the first and second lead frames. The packaging body has a base portion encapsulating the metallic frame and a light-permitting portion arranged above the LED chip.

Abstract: A light emitting diode package includes a metallic frame, and an LED chip disposed on the metallic frame. The metallic frame includes first and second metal plates arranged side by side with a space therebetween, and two support arms extending integrally and respectively from two opposite ends of the second metal plate to a level higher than the second top surface and that further extend toward the first metal plate at a level higher than the first top surface crossing the space. The support arms are not in contact with the first metal plate. An encapsulant encapsulates the metallic frame and the LED chip. At least a region of the encapsulant that covers the LED chip is transparent.

Abstract: A light-emitting diode device includes: a substrate; an upper metal film disposed on an upper surface of the substrate, and including a chip-mounting region and a plurality of conductive pad regions; two first light-emitting chips and two second light-emitting chips disposed on the chip-mounting region, the first and second light-emitting chips being disposed alternately, two of the first and second light-emitting chips being opposite to each other; a fluorescent layer coated on the first light-emitting chips; and a lens disposed on the substrate to cover the first and second light-emitting chips and the fluorescent layer.

Abstract: The present invention relates to an LED device, which includes a metallic frame, an LED chip, and a packaging body. The metallic frame includes a first lead frame and a second lead frame. The first lead frame has a protruding portion extending toward the second lead frame, while the second lead frame has a notch formed correspondingly to the protruding portion. An electrically insulated region is cooperatively defined by the first and second lead frames. The metallic frame defines at least one blind hole in proximate to the electrically insulated region. The LED chip is electrically connected to the first and second lead frames. The packaging body has a base portion encapsulating the metallic frame and a light-permitting portion arranged above the LED chip.

Abstract: A light-emitting diode device includes: a substrate; an upper metal film disposed on an upper surface of the substrate, and including a chip-mounting region and a plurality of conductive pad regions; two first light-emitting chips and two second light-emitting chips disposed on the chip-mounting region, the first and second light-emitting chips being disposed alternately, two of the first and second light-emitting chips being opposite to each other; a fluorescent layer coated on the first light-emitting chips; and a lens disposed on the substrate to cover the first and second light-emitting chips and the fluorescent layer.