Abstract: Strain relief trenches may be formed in a substrate prior to growth of an epitaxial layer on the substrate. The trenches may reduce the stresses and strains on the epitaxial layer that occur during the epitaxial growth process due to differences in material properties (e.g., lattice mismatches, differences in thermal expansion coefficients, and/or the like) between the epitaxial layer material and the substrate material. The stress and strain relief provided by the trenches may reduce or eliminate cracks and/or other types of defects in the epitaxial layer and the substrate, may reduce and/or eliminate bowing and warping of the substrate, may reduce breakage of the substrate, and/or the like. This may increase the center-to-edge quality of the epitaxial layer, may permit epitaxial layers to be grown on larger substrates, and/or the like.

Abstract: Strain relief trenches may be formed in a substrate prior to growth of an epitaxial layer on the substrate. The trenches may reduce the stresses and strains on the epitaxial layer that occur during the epitaxial growth process due to differences in material properties (e.g., lattice mismatches, differences in thermal expansion coefficients, and/or the like) between the epitaxial layer material and the substrate material. The stress and strain relief provided by the trenches may reduce or eliminate cracks and/or other types of defects in the epitaxial layer and the substrate, may reduce and/or eliminate bowing and warping of the substrate, may reduce breakage of the substrate, and/or the like. This may increase the center-to-edge quality of the epitaxial layer, may permit epitaxial layers to be grown on larger substrates, and/or the like.

Abstract: Strain relief trenches may be formed in a substrate prior to growth of an epitaxial layer on the substrate. The trenches may reduce the stresses and strains on the epitaxial layer that occur during the epitaxial growth process due to differences in material properties (e.g., lattice mismatches, differences in thermal expansion coefficients, and/or the like) between the epitaxial layer material and the substrate material. The stress and strain relief provided by the trenches may reduce or eliminate cracks and/or other types of defects in the epitaxial layer and the substrate, may reduce and/or eliminate bowing and warping of the substrate, may reduce breakage of the substrate, and/or the like. This may increase the center-to-edge quality of the epitaxial layer, may permit epitaxial layers to be grown on larger substrates, and/or the like.

Abstract: An optical test method is provided. The optical test method includes emitting light through a gap between two substrates of a tested optical element disposed on a holder to generate a plurality of light beams. The optical test method further includes driving the holder with the tested optical element to move to N positions. The optical test method also includes receiving one of the light beams from the tested optical element in the N positions to generate N first intensity signals. In addition, the optical test method includes determining the size of the gap of the tested optical element according to the N first intensity signals and reference data.

Abstract: A system for fabricating a semiconductor device includes a first supplier, a second supplier, a mixer, and an applier. The first supplier is configured to supply a developer solution having a first chemical. The second supplier is configured to supply the second chemical to the mixer. The mixer is configured to mix the developer solution with a second chemical, in which the second chemical is configured to form a plurality of bubbles in the developer solution. The applier is configured to apply the developer solution mixed with the bubbles onto a photoresist layer formed on a substrate, in which the photoresist layer has an exposed region, and the first chemical is configured to dissolve the exposed region of the photoresist layer through a chemical reaction.

Abstract: An optical test method is provided. The optical test method includes emitting light through a gap between two substrates of a tested optical element disposed on a holder to generate a plurality of light beams. The optical test method further includes driving the holder with the tested optical element to move to N positions. The optical test method also includes receiving one of the light beams from the tested optical element in the N positions to generate N first intensity signals. In addition, the optical test method includes determining the size of the gap of the tested optical element according to the N first intensity signals and reference data.

Abstract: An optical test method is provided. The optical test method includes emitting light through a gap between two substrates of a tested optical element disposed on a holder to generate a plurality of light beams. The optical test method further includes driving the holder with the tested optical element to move to N positions. The optical test method also includes receiving one of the light beams from the tested optical element in the N positions to generate N first intensity signals. In addition, the optical test method includes determining the size of the gap of the tested optical element according to the N first intensity signals and reference data.

Abstract: An optical test method is provided. The optical test method includes emitting light through a gap between two substrates of a tested optical element disposed on a holder to generate a plurality of light beams. The optical test method further includes driving the holder with the tested optical element to move to N positions. The optical test method also includes receiving one of the light beams from the tested optical element in the N positions to generate N first intensity signals. In addition, the optical test method includes determining the size of the gap of the tested optical element according to the N first intensity signals and reference data.

Abstract: A system for fabricating a semiconductor device includes a first supplier, a second supplier, a mixer, and an applier. The first supplier is configured to supply a developer solution having a first chemical. The second supplier is configured to supply the second chemical to the mixer. The mixer is configured to mix the developer solution with a second chemical, in which the second chemical is configured to form a plurality of bubbles in the developer solution. The applier is configured to apply the developer solution mixed with the bubbles onto a photoresist layer formed on a substrate, in which the photoresist layer has an exposed region, and the first chemical is configured to dissolve the exposed region of the photoresist layer through a chemical reaction.

Abstract: An exemplary wafer level package comprises a semiconductor wafer with a plurality of semiconductor chips of perfect polygonal shapes thereon. A circuit-free area is defined over the semiconductor wafer to electrically isolate the semiconductor chips. A dam structure is substantially formed over the circuit-free area, wherein a portion of the dam structure formed around an edge of the semiconductor wafer is formed with a plurality via holes therein. A transparent substrate is formed over the semiconductor wafer, defining a plurality of cavities between the semiconductor chips and the transparent substrate, wherein the transparent substrate is supported by the dam structure.

Abstract: An image sensor module having a light gathering region and a light non-gathering region includes an image sensor, a light blocking spacer, a lens layer and a fixing shell. The light blocking spacer is disposed on the image sensor and located in the light non-gathering region. The light blocking spacer has a through hole exposing a portion of the image sensor in the light gathering region. The lens layer is disposed on the light blocking spacer and covers the through hole. The lens layer includes a transparent substrate and a lens disposed on the transparent substrate and located in the light gathering region. The fixing shell located in the light non-gathering region wraps the sidewalls of the image sensor, the light blocking spacer and the lens layer continuously. The material of the fixing shell includes a thermosetting material. A method for manufacturing the image sensor module is also provided.

Abstract: An image sensor module having a light gathering region and a light non-gathering region includes an image sensor, a light blocking spacer, a lens layer and a fixing shell. The light blocking spacer is disposed on the image sensor and located in the light non-gathering region. The light blocking spacer has a through hole exposing a portion of the image sensor in the light gathering region. The lens layer is disposed on the light blocking spacer and covers the through hole. The lens layer includes a transparent substrate and a lens disposed on the transparent substrate and located in the light gathering region. The fixing shell located in the light non-gathering region wraps the sidewalls of the image sensor, the light blocking spacer and the lens layer continuously. The material of the fixing shell includes a thermosetting material. A method for manufacturing the image sensor module is also provided.

Abstract: A method for photolithography in semiconductor device manufacturing comprises defining test critical dimension target for a photolithography mask, measuring a mask critical dimension, comparing mask critical dimension to the test critical dimension target and determining a critical dimension deviation, determining a photolithography light base energy in response to the critical dimension deviation, and exposing the wafer according to the photolithography light base energy.

Abstract: An exemplary wafer level package comprises a semiconductor wafer with a plurality of semiconductor chips of perfect polygonal shapes thereon. A circuit-free area is defined over the semiconductor wafer to electrically isolate the semiconductor chips. A dam structure is substantially formed over the circuit-free area, wherein a portion of the dam structure formed around an edge of the semiconductor wafer is formed with a plurality via holes therein. A transparent substrate is formed over the semiconductor wafer, defining a plurality of cavities between the semiconductor chips and the transparent substrate, wherein the transparent substrate is supported by the dam structure.

Abstract: In a stylus attachment structure for an IT product, the attachment structure formed on an IT product, such as, a laptop, a tablet PC and a PDA, comprises an attachment slot, a push-out member, a retaining member and an elastic part, wherein the push-out member is arranged in the attachment slot and the retaining member is slidably mounted at one end of the attachment slot for selectively retaining or releasing the stylus. In this way, when the stylus is not in use for a while, it can be obliquely plugged to one end of the attachment slot, it is easy for the user to pick up the stylus; alternatively, the stylus can be fully received in the attachment socket and further secured in place with a retaining member, thereby enabling the stylus to be attached properly so that it doesn't become loose.

Abstract: A method for photolithography in semiconductor device manufacturing comprises defining test critical dimension target for a photolithography mask, measuring a mask critical dimension, comparing mask critical dimension to the test critical dimension target and determining a critical dimension deviation, determining a photolithography light base energy in response to the critical dimension deviation, and exposing the wafer according to the photolithography light base energy.

Abstract: In a stylus attachment structure for an IT product, the attachment structure formed on an IT product, such as, a laptop, a tablet PC and a PDA, comprises an attachment slot, a push-out member, a retaining member and an elastic part, wherein the push-out member is arranged in the attachment slot and the retaining member is slidably mounted at one end of the attachment slot for selectively retaining or releasing the stylus. In this way, when the stylus is not in use for a while, it can be obliquely plugged to one end of the attachment slot, it is easy for the user to pick up the stylus; alternatively, the stylus can be fully received in the attachment socket and further secured in place with a retaining member, thereby enabling the stylus to be attached properly so that it doesn't become loose.

Abstract: A multiple run by run process is described. A plurality of tools and a plurality of products to be run on the tools are provided. A desired recipe is calculated for each product on each tool based on a previous recipe used for each product on each tool and deviation of a parameter from a target value. Thereafter, the plurality of products is run on the plurality of tools. The desired recipe is updated after each run of each tool.

Abstract: A multiple run by run process is described. A plurality of tools and a plurality of products to be run on the tools are provided. Tool effects and product effects on a parameter are identified for each tool and each product. A desired recipe is calculated for each product on each tool based on the tool effects and product effects identified. Thereafter, the plurality of products is run on the plurality of tools. The desired recipe is updated after each run of each tool. Tool aging is calculated after each run of each tool based on the desired recipe used.

Abstract: An advanced process control method using time interval between lots of a particular product to control the weighting of feedback data is described. A plurality of products are fabricated wherein the products are tracked by the process control method based on product type, for example. Variation in a parameter is detected. The adjustment speed of a process recipe is determined based on a time interval weighting wherein the time interval is defined as the time between processing of lots of the same product type. The process recipe is updated at the determined adjustment speed to decrease variation of the parameter.