Patents by Inventor Yi-Fang Lai

Yi-Fang Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10724140
    Abstract: A thermal chemical vapor deposition (CVD) system includes a bottom chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the bottom chamber. The upper chamber and the bottom chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the bottom chamber from the heat.
    Type: Grant
    Filed: July 31, 2018
    Date of Patent: July 28, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yen-Chan Lo, Yi-Fang Lai, Po-Hsiung Leu, Ding-I Liu, Si-Wen Liao, Kai-Shiung Hsu, Jheng-Uei Hsieh, Shian-Huei Lin, Jui-Fu Hsu, Cheng-Tsung Wu
  • Patent number: 10626499
    Abstract: A deposition device structure is provided. The deposition device structure includes a heater in a chamber. The deposition device structure also includes a shower head over the heater. The shower head includes holes extending from a top surface of the shower head to a bottom surface of the shower head. The bottom surface of the shower head faces the heater. The bottom surface of the shower head has a first section and a second section. The second section of the bottom surface is rougher than the first section of the bottom surface.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: April 21, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Chan Lo, Huan-Chieh Chen, Yi-Fang Lai, Keith Kuang-Kuo Koai, Chin-Feng Sun, Po-Hsiung Leu, Ding-I Liu, Kai-Shiung Hsu
  • Publication number: 20190032215
    Abstract: A deposition device structure is provided. The deposition device structure includes a heater in a chamber. The deposition device structure also includes a shower head over the heater. The shower head includes holes extending from a top surface of the shower head to a bottom surface of the shower head. The bottom surface of the shower head faces the heater. The bottom surface of the shower head has a first section and a second section. The second section of the bottom surface is rougher than the first section of the bottom surface.
    Type: Application
    Filed: October 5, 2017
    Publication date: January 31, 2019
    Inventors: Yen-Chan LO, Huan-Chieh CHEN, Yi-Fang LAI, Keith Kuang-Kuo KOAI, Chin-Feng SUN, Po-Hsiung LEU, Ding-I LIU, Kai-Shiung HSU
  • Patent number: 10161041
    Abstract: A thermal chemical vapor deposition (CVD) system includes a bottom chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the bottom chamber. The upper chamber and the bottom chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the bottom chamber from the heat.
    Type: Grant
    Filed: July 27, 2016
    Date of Patent: December 25, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yen-Chan Lo, Yi-Fang Lai, Po-Hsiung Leu, Ding-I Liu, Si-Wen Liao, Kai-Shiung Hsu, Jheng-Uei Hsieh, Shian-Huei Lin, Jui-Fu Hsu, Cheng-Tsung Wu
  • Publication number: 20180334747
    Abstract: A thermal chemical vapor deposition (CVD) system includes a bottom chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the bottom chamber. The upper chamber and the bottom chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the bottom chamber from the heat.
    Type: Application
    Filed: July 31, 2018
    Publication date: November 22, 2018
    Inventors: Yen-Chan Lo, Yi-Fang Lai, Po-Hsiung Leu, Ding-I Liu, Si-Wen Liao, Kai-Shiung Hsu, Jheng-Uei Hsieh, Shian-Huei Lin, Jui-Fu Hsu, Cheng-Tsung Wu
  • Publication number: 20170107619
    Abstract: A thermal chemical vapor deposition (CVD) system includes a bottom chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the bottom chamber. The upper chamber and the bottom chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the bottom chamber from the heat.
    Type: Application
    Filed: July 27, 2016
    Publication date: April 20, 2017
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Chan LO, Yi-Fang LAI, Po-Hsiung LEU, Ding-I LIU, Si-Wen LIAO, Kai-Shiung HSU, Jheng-Uei HSIEH, Shian-Huei LIN, Jui-Fu HSU, Cheng-Tsung WU
  • Publication number: 20060196417
    Abstract: Gas distribution systems for deposition processes and methods of using the same. A substrate support member holding a substrate is disposed in a processing chamber. A plurality of first and second gas nozzles is connected to a gas distribution ring disposed in the processing chamber. The first gas nozzles provide a first reactant gas and include at least first and second outlet apertures. The second gas nozzles provide a second reactant gas and include third outlet apertures. The first outlet aperture is larger than the second outlet aperture, such that the first gas nozzle with the first outlet aperture creates an increased gas flow adjacent to a determined portion of the substrate to increase deposition from the first reactant gas on the determined portion of the substrate.
    Type: Application
    Filed: March 3, 2005
    Publication date: September 7, 2006
    Inventors: Chia-Hui Lin, Shih-Hao Lo, Tsang-Yu Liu, Szu-An Wu, Cheng-Hui Yang, Yi-Fang Lai, Chien Lin