Abstract: An integrated semiconductor device for manipulating and processing bio-entity samples is disclosed. The device includes a microfluidic channel that is coupled to fluidic control circuitry, a photosensor array coupled to sensor control circuitry, an optical component aligned with the photosensor array to manipulate a light signal before the light signal reaches the photosensor array, and a microfluidic grid coupled to the microfluidic channel and providing for transport of bio-entity sample droplets by electrowetting. The device further includes logic circuitry coupled to the fluidic control circuitry and the sensor control circuitry, with the fluidic control circuitry, the sensor control circuitry, and the logic circuitry being formed on a first substrate.

Abstract: An integrated semiconductor device for manipulating and processing bio-entity samples is disclosed. The device includes a microfluidic channel formed between a first substrate and a second substrate and a microfluidic grid formed over the first substrate and coupled to the microfluidic channel to manipulate a droplet within the microfluidic channel. The device further includes a magnetic field generation device included in the microfluidic grid and fluidic control circuitry coupled to the magnetic device to facilitate control of the magnetic field generation device to manipulate the droplet, when the droplet contains at least one magnetic bead, within the microfluidic channel.

Abstract: An integrated circuit (IC) structure is provided. The IC structure includes an IC substrate including active devices which are coupled together through a conductive interconnect structure arranged thereover. The conductive interconnect structure includes a series of horizontal conductive layers and dielectric regions arranged between neighboring horizontal conductive layers. The conductive interconnect structure includes an uppermost conductive horizontal region with a planar top surface region. A MEMS substrate is arranged over the IC substrate and includes a flexible or moveable structure that flexes or moves commensurate with a force applied to the flexible or moveable structure. The active devices of the IC substrate are arranged to establish analysis circuitry to facilitate electrical measurement of a capacitance between the uppermost conductive horizontal region and the flexible or moveable structure.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.

Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of microwells having a bio-sensing layer and a number of stacked well portions over a multi-layer interconnect (MLI). A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The microwells are formed by removing a top metal plate on a topmost level of the MLI.

Abstract: The present disclosure relates to an integrated microsystem with a protection barrier structure, and an associated method. In some embodiments, the integrated microsystem comprises a first die having a plurality of CMOS devices disposed thereon, a second die having a plurality of MEMS devices disposed thereon and a vapor hydrofluoric acid (vHF) etch barrier structure disposed between the first die and the second die. The second die is bonded to the first die at a bond interface region. The vHF etch barrier structure comprises a vHF barrier layer over an upper surface of the first die, and a stress reduction layer arranged between the vHF etch barrier layer and the upper surface of the first die.

Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of micro wells having a sensing gate bottom and a number of stacked well portions. A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The micro wells are formed by multiple etching operations through different materials, including a sacrificial plug, to expose the sensing gate without plasma induced damage.

Abstract: A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes an electro-wetting-on-dielectric (EWOD) device. The EWOD device includes a top portion over a bottom portion and a channel gap between the top portion and the bottom portion. The bottom portion includes a driving dielectric layer over a first electrode, a second electrode and a first separating portion of an ILD layer between the first electrode and a second electrode. The driving dielectric layer has a first thickness less than about 1,000 ?. An EWOD device with a driving dielectric layer having a first thickness less 1000 ? requires a lower applied voltage to alter a shape of a droplet within the device and has a longer operating life than an EWOD device that requires a higher applied voltage to alter the shape of the droplet.

Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET includes a microwells having a sensing layer, a top metal stack under the sensing layer, and a multi-layer interconnect (MLI) under the top metal stack. The top metal stack includes a top metal and a protective layer over and peripherally surrounding the top metal.

Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of micro wells having a sensing gate bottom and a number of stacked well portions. A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The micro wells are formed by multiple etching operations through different materials, including a sacrificial plug, to expose the sensing gate without plasma induced damage.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.

Abstract: An integrated semiconductor device for manipulating and processing bio-entity samples is disclosed. The device includes a microfluidic channel formed between a first substrate and a second substrate and a microfluidic grid formed over the first substrate and coupled to the microfluidic channel to manipulate a droplet within the microfluidic channel. The device further includes a magnetic field generation device included in the microfluidic grid and fluidic control circuitry coupled to the magnetic device to facilitate control of the magnetic field generation device to manipulate the droplet, when the droplet contains at least one magnetic bead, within the microfluidic channel.

Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET includes a microwells having a sensing layer, a top metal stack under the sensing layer, and a multi-layer interconnect (MLI) under the top metal stack. The top metal stack includes a top metal and a protective layer over and peripherally surrounding the top metal.

Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET includes a microwells having a sensing layer, a top metal stack under the sensing layer, and a multi-layer interconnect (MLI) under the top metal stack. The top metal stack includes a top metal and a protective layer over and peripherally surrounding the top metal.

Abstract: A method of forming a semiconductor device includes depositing a light reflecting layer over a substrate. The method also includes forming a protection layer over the light reflecting layer. The method further includes forming an anti-reflective coating (ARC) layer over the protection layer. The method additionally includes forming an opening in the ARC layer, the protection layer and the light reflecting layer exposing the substrate. The method also includes removing the ARC layer in a wet solution comprising H2O2, the ARC layer being exposed to the H2O2 at a flow rate greater than about 10 standard cubic centimeters per minute (sccm).

Abstract: The present disclosure provides biochips and methods of fabricating biochips. The method includes combining three portions: a transparent substrate, a first substrate with microfluidic channels therein, and a second substrate. Through-holes for inlet and outlet are formed in the transparent substrate or the second substrate. Various non-organic landings with support medium for bio-materials to attach are formed on the first substrate and the second substrate before they are combined. In other embodiments, the microfluidic channel is formed of an adhesion layer between a transparent substrate and a second substrate with landings on the substrates.

Abstract: A method of forming of MEMS nanostructures includes a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A light reflecting layer is deposited over the substrate thereby covering the top surface and the sidewall surface of each mesa. A protection layer is formed over the light reflecting layer. An ARC layer is formed over the protection layer. An opening in a photo resist layer is formed over the ARC layer over each mesa. A portion of the ARC layer, the protection layer and the light reflecting layer are removed through the opening to expose the top surface of each mesa. The photo resist layer and the ARC layer over the top surface of each mesa are removed.

Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of microwells having a bio-sensing layer and a number of stacked well portions over a multi-layer interconnect (MLI). A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The microwells are formed by removing a top metal plate on a topmost level of the MLI.

Abstract: An integrated semiconductor device for manipulating and processing bio-entity samples is disclosed. The device includes a microfluidic channel that is coupled to fluidic control circuitry, a photosensor array coupled to sensor control circuitry, an optical component aligned with the photosensor array to manipulate a light signal before the light signal reaches the photosensor array, and a microfluidic grid coupled to the microfluidic channel and providing for transport of bio-entity sample droplets by electrowetting. The device further includes logic circuitry coupled to the fluidic control circuitry and the sensor control circuitry, with the fluidic control circuitry, the sensor control circuitry, and the logic circuitry being formed on a first substrate.

Abstract: The present disclosure provides biochips and methods of fabricating biochips. The method includes combining three portions: a transparent substrate, a first substrate with microfluidic channels therein, and a second substrate. Through-holes for inlet and outlet are formed in the transparent substrate or the second substrate. Various non-organic landings with support medium for bio-materials to attach are formed on the first substrate and the second substrate before they are combined. In other embodiments, the microfluidic channel is formed of an adhesion layer between a transparent substrate and a second substrate with landings on the substrates.