Patents by Inventor Yi-Huan Chung

Yi-Huan Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11171285
    Abstract: Provided is a non-ferromagnetic spacing composite layer, comprising first, second and third spacing layers stacked in sequence. The first and third spacing layers are each made of Re, Rh, Ir, W, Mo, Ta, or Nb, and the second spacing layer is made of Ru. The second spacing layer has a thickness of equal to or more than 0.18 nm, and the non-ferromagnetic spacing composite layer has a total thickness of 0.6 nm to 1 nm. Also, provided are a method of preparing the non-ferromagnetic spacing composite layer, a synthetic antiferromagnetic laminated structure, and an MRAM. The synthetic antiferromagnetic laminated structure can maintain a certain coupling strength and the RKKY indirect interaction after thermal treatment, thereby keeping the recording function of MRAM.
    Type: Grant
    Filed: December 4, 2020
    Date of Patent: November 9, 2021
    Inventors: Chih-Huang Lai, Chun-Liang Yang, Yi-Huan Chung, Wei-Chih Huang, Chih-Wen Tang, Hui-Wen Cheng