Patents by Inventor Yi-Keng Fu

Yi-Keng Fu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140131732
    Abstract: A light emitting diode device may include a carrier, a p-type and n-type semiconductor layers, an active layer, a first electrode and a second electrode is provided. The carrier has a growth surface and at least one nano-patterned structure on the growth surface, in which the carrier includes a substrate and a semiconductor capping layer disposed between the substrate and the n-type semiconductor layer. The n-type semiconductor layer and the p-type semiconductor layer are located over the growth surface of the carrier. The active layer is located between the n-type and p-type semiconductor layers, in which a wavelength ? of light emitted by the active layer is 222 nm???405 nm, and a defect density of the active layer is less than or equal to 5×1010/cm2. The first and second electrodes are respectively connected to the n-type and p-type semiconductor layers. A carrier for carrying a semiconductor layer is also provided.
    Type: Application
    Filed: November 15, 2013
    Publication date: May 15, 2014
    Applicant: Industrial Technology Research Institute
    Inventors: Yi-Keng Fu, Rong Xuan, Hsun-Chih Liu
  • Publication number: 20140124833
    Abstract: A nitride semiconductor structure including a silicon substrate, a nucleation layer, a discontinuous defect blocking layer, a buffer layer and a nitride semiconductor layer is provided. The nucleation layer disposed on the silicon substrate, wherein the nucleation layer has a defect density d1. A portion of the nucleation layer is covered by the discontinuous defect blocking layer. The buffer layer is disposed on the discontinuous defect blocking layer and a portion of the nucleation layer that is not covered by the discontinuous defect blocking layer. The nitride semiconductor layer is disposed on the buffer layer. A ratio of a defect density d2 of the nitride semiconductor layer to the defect density d1 of the nucleation layer is less than or equal to about 0.5, at a location where about 1 micrometer above the interface between the nitride semiconductor layer and the buffer layer.
    Type: Application
    Filed: December 26, 2012
    Publication date: May 8, 2014
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yen-Hsiang Fang, Chien-Pin Lu, Chen-Zi Liao, Rong Xuan, Yi-Keng Fu, Chih-Wei Hu, Hsun-Chih Liu
  • Publication number: 20140097442
    Abstract: A nitride semiconductor device includes a silicon substrate, a nucleation layer, a first buffer layer, a first type nitride semiconductor layer, a light-emitting layer and a second type nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate. The first buffer layer is disposed on the nucleation layer. The first buffer layer includes a dopant and Gallium, and an atomic radius of the dopant is larger than an atomic radius of Gallium. The first type nitride semiconductor layer is disposed over the first buffer layer. The light-emitting layer is disposed on the first type nitride semiconductor layer. The second type nitride semiconductor layer is disposed on the light-emitting layer.
    Type: Application
    Filed: October 9, 2012
    Publication date: April 10, 2014
    Applicant: Industrial Technology Research Institute
    Inventors: Yen-Hsiang Fang, Chen-Zi Liao, Rong Xuan, Chien-Pin Lu, Yi-Keng Fu, Chih-Wei Hu, Hsun-Chih Liu
  • Publication number: 20140097444
    Abstract: A nitride semiconductor device includes a silicon substrate, a nucleation layer, a buffer layer, a first type nitride semiconductor layer, a light-emitting layer and a second type nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate. The buffer layer is disposed on the nucleation layer. The first type nitride semiconductor layer is disposed on the buffer layer. The first type nitride semiconductor layer is doped with a first type dopant, at least one of the buffer layer and the first type nitride semiconductor layer comprises a codopant distributed therein, and an atomic radius of the codopant is larger than an atomic radius of the first type dopant. The light-emitting layer is disposed on the first type nitride semiconductor layer. The second type nitride semiconductor layer is disposed on the light-emitting layer, the second type nitride semiconductor layer comprising a second type dopant.
    Type: Application
    Filed: October 9, 2012
    Publication date: April 10, 2014
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yen-Hsiang Fang, Chen-Zi Liao, Rong Xuan, Chien-Pin Lu, Yi-Keng Fu, Chih-Wei Hu, Hsun-Chih Liu
  • Publication number: 20140097443
    Abstract: A nitride semiconductor device includes a silicon substrate, a nucleation layer, a buffer layer, a first type nitride semiconductor stacked layer, a light-emitting layer and a second type nitride semiconductor layer. The nucleation layer is disposed on the silicon substrate. The buffer layer is disposed on the nucleation layer. The first type nitride semiconductor stacked layer is disposed on the buffer layer. The first type nitride semiconductor stacked layer being a plurality of lattice mismatch stacked layers includes a plurality of first nitride semiconductor layers and a plurality of second nitride semiconductor layers. The first nitride semiconductor layers and the second nitride semiconductor layers are stacked alternately, and the first nitride semiconductor layers and the second nitride semiconductor layers are different material. The light-emitting layer is disposed on the first type nitride semiconductor stacked layer.
    Type: Application
    Filed: October 9, 2012
    Publication date: April 10, 2014
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yen-Hsiang Fang, Rong Xuan, Chen-Zi Liao, Yi-Keng Fu, Chih-Wei Hu, Chien-Pin Lu, Hsun-Chih Liu
  • Patent number: 8604488
    Abstract: A light emitting diode including a GaN substrate, a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first electrode, and a second electrode is provided. The GaN substrate has a first surface and a second surface opposite thereto, and the second surface has a plurality of protuberances, the height of the protuberance is h ?m and the distribution density of the protuberance on the second surface is d cm?2, wherein 9.87×107?h2d, and h?1.8. The first type semiconductor is disposed on the first surface of the GaN substrate. The light emitting layer is disposed on a partial region of the first semiconductor layer, and the wavelength of the light emitted by the light emitting layer is from 375 nm to 415 nm. The second semiconductor layer is disposed on the light emitting layer.
    Type: Grant
    Filed: February 2, 2012
    Date of Patent: December 10, 2013
    Assignee: Industrial Technology Research Institute
    Inventors: Yi-Keng Fu, Ren-Hao Jiang, Yen-Hsiang Fang, Bo-Chun Chen, Chia-Feng Lin
  • Patent number: 8587017
    Abstract: A light emitting device and a method of fabricating a light emitting device are provided. The light emitting device includes a carrier substrate, at least one epitaxy structure, a high resistant ring wall, a first electrode, and a second electrode. The epitaxy structure is disposed on the carrier substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The first semiconductor layer is relatively away from the carrier substrate and the second semiconductor layer is relatively close to the carrier substrate. The high resistant ring wall surrounds the epitaxy structure and a width of the high resistant ring wall is greater than 5 ?m. The first electrode is disposed between the carrier substrate and the epitaxy structure. The second electrode is disposed at a side of the epitaxy structure away from the carrier substrate.
    Type: Grant
    Filed: March 24, 2011
    Date of Patent: November 19, 2013
    Assignee: Industrial Technology Research Institute
    Inventors: Wei-Hung Kuo, Yi-Keng Fu, Suh-Fang Lin, Rong Xuan
  • Publication number: 20130270515
    Abstract: A light emitting diode includes a substrate, an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a first electrode, and a second electrode. The n-type semiconductor layer is located between the substrate and the p-type semiconductor layer. The active layer is located between the n-type semiconductor layer and the p-type semiconductor layer. The wavelength of light emitted by the active layer is ?, and 222 nm???405 nm. The active layer includes i quantum barrier layers and (i?1) quantum wells, each quantum well is located between any two quantum barrier layers, and i is an integer greater than or equal to 2. The thickness of each of the quantum barrier layers counting from the p-type semiconductor layer is T1 to Ti, and T1 is greater than T2 and T3, or T1=T2>T3, or T1>T2>T3.
    Type: Application
    Filed: May 29, 2012
    Publication date: October 17, 2013
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventor: Yi-Keng Fu
  • Publication number: 20130228741
    Abstract: A light emitting diode including a sapphire substrate, a n-type semiconductor layer, an active layer, a p-type semiconductor layer, a first and a second electrode is provided. The n-type semiconductor layer is disposed on the sapphire substrate. The active layer has an active region with a defect density greater than or equal to 2×107/cm3. The active layer is disposed between the n-type and p-type semiconductor layers. The wavelength of light emitted by the active layer is ?, and 222 nm???405 nm. The active layer includes i quantum barrier layers and (i?1) quantum wells, each quantum well is disposed between any two quantum barrier layers, and i?2. N-type dopant is doped in at least k layers of the i quantum barrier layers, wherein k is a natural number and k?1, when i even, k?i/2, and when i is odd, k?(i?1)/2.
    Type: Application
    Filed: May 10, 2012
    Publication date: September 5, 2013
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventor: Yi-Keng Fu
  • Publication number: 20130228743
    Abstract: A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, an interlayer, an electron barrier layer, a first and a second electrodes are provided. The active layer is located between the n-type and p-type semiconductor layers, and includes multiple quantum barrier layers and quantum wells located between any two quantum barrier layers. A lattice constant of the quantum barrier layer closest to the p-type semiconductor layer is a1. The interlayer is located between and in contact with the active layer and the p-type semiconductor layer, wherein a lattice constant of the interlayer is a2. The electron barrier layer is located between the interlayer and the p-type semiconductor layer, wherein a lattice constant of the electron barrier layer is a3, and a2 is not equal to a1 or a3. The first and second electrodes are respectively located on the n-type and p-type semiconductor layers.
    Type: Application
    Filed: December 27, 2012
    Publication date: September 5, 2013
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yi-Keng Fu, Yu-Hsuan Lu
  • Publication number: 20130112987
    Abstract: A light emitting diode including a GaN substrate, a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first electrode, and a second electrode is provided. The GaN substrate has a first surface and a second surface opposite thereto, and the second surface has a plurality of protuberances, the height of the protuberance is h ?m and the distribution density of the protuberance on the second surface is d cm?2, wherein 9.87×107?h2d, and h?1.8. The first type semiconductor is disposed on the first surface of the GaN substrate. The light emitting layer is disposed on a partial region of the first semiconductor layer, and the wavelength of the light emitted by the light emitting layer is from 375 nm to 415 nm. The second semiconductor layer is disposed on the light emitting layer.
    Type: Application
    Filed: February 2, 2012
    Publication date: May 9, 2013
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yi-Keng Fu, Ren-Hao Jiang, Yen-Hsiang Fang, Bo-Chun Chen, Chia-Feng Lin
  • Publication number: 20110254044
    Abstract: A light emitting device and a method of fabricating a light emitting device are provided. The light emitting device includes a carrier substrate, at least one epitaxy structure, a high resistant ring wall, a first electrode, and a second electrode. The epitaxy structure is disposed on the carrier substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The first semiconductor layer is relatively away from the carrier substrate and the second semiconductor layer is relatively close to the carrier substrate. The high resistant ring wall surrounds the epitaxy structure and a width of the high resistant ring wall is greater than 5 ?m. The first electrode is disposed between the carrier substrate and the epitaxy structure. The second electrode is disposed at a side of the epitaxy structure away from the carrier substrate.
    Type: Application
    Filed: March 24, 2011
    Publication date: October 20, 2011
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Wei-Hung Kuo, Yi-Keng Fu, Suh-Fang Lin, Rong Xuan