Abstract: The present invention relates to a method for simultaneously transmitting and receiving multiple managed objects in order to compensate for the inadeguacies of the current 3GPP TS32.607 standard, characterized in that, the method comprises: encapsulating two or more managed objects in one or more atomic transactions according to internal attributes and data processing of the managed objects, wherein each atomic transaction includes at least two managed objects; according to a pre-defined association rule, determining association relationships between managed objects in the one atomic transaction, or determining association relationships between multiple atomic transactions and association relationships between managed objects in each of the multiple atomic transactions; and transmitting one or more atomic transactions through a communication network.

Abstract: The present disclosure provides a battery module heat management assembly, a battery pack and a vehicle. The battery module heat management assembly includes a cooling mechanism. The cooling mechanism includes: a plurality of multi-channel pipes configured to be provided at a bottom of a battery module; a first fluid collector and a second fluid collector configured to be communicated with an external cooling fluid circuit, two ends of each multi-channel pipe are respectively communicated with the first fluid collector and the second fluid collector.

Abstract: A finned semiconductor structure including sets of relatively wide and relatively narrow fins is obtained by employing hard masks having different quality. A relatively porous hard mask is formed over a first region of a semiconductor substrate and a relatively dense hard mask is formed over a second region of the substrate. Patterning of the different hard masks using a sidewall image transfer process causes greater lateral etching of the relatively porous hard mask than the relatively dense hard mask. A subsequent reactive ion etch to form semiconductor fins causes relatively narrow fins to be formed beneath the relatively porous hard mask and relatively wide fins to be formed beneath the relatively dense hard mask.

Abstract: An image processing method and apparatus. The image processing method includes: obtaining encoded data of a first region and a neighboring region neighboring to the first region in a two-dimensional planar image, where the two-dimensional planar image is an image obtained by mapping a spherical panorama image, and the first region and the neighboring region have an overlapping region; determining a pixel value of a pixel in an image of the first region; determining a pixel value of a pixel in an image of the neighboring region; and determining a target pixel value of a pixel in the overlapping region based on the pixel value of the pixel of the first region in the overlapping region and the pixel value of the pixel of the neighboring region in the overlapping region.

Abstract: A plasma confinement ring for a plasma chamber comprises a ring-shaped element and a cylindrical element. The ring-shaped element of the plasma confinement ring surrounds a substrate support assembly in the plasma chamber and is arranged along a plane in which a substrate is arranged on the substrate support assembly. The ring-shaped element includes a plurality of orifices. The cylindrical element of the plasma confinement ring extends from an outer edge of the ring-shaped element in a direction perpendicular to the plane in which the substrate is arranged on the substrate support assembly in the plasma chamber. The plasma confinement ring is monolithic.

Abstract: The present invention is a method and system for supporting a beamforming antenna system in a mobile broadband communication network with an improved beam pattern, beam sweep pattern, pilot channel design with feedback and reporting rules, and control signaling design. Specifically, the improved beam pattern includes a method of supporting wireless communications in a wireless network forming at least two spatial beams within a cell segment where the at least two spatial beams are associated with different power levels, and separately, where at least two spatial beams can be moved across the cell segment according to a unique sweep pattern. The pilot channel design improves network bandwidth performance and improves user mobility tracking. Feedback and reporting rules can be established using a particular field designator, CQI, in the preferred embodiment.

Abstract: A dissolvable aluminum alloy can be used for components of a downhole tool in hydraulic fracturing operations with low salinity fluid at low temperatures, including fresh water. The dissolvable aluminum alloy can be dissolved completely and controlled at a dissolving rate compatible with hydraulic fracturing operations. The alloy comprises aluminum having grain boundaries, magnesium at 8.25-12% by weight, gallium at 2.5-4% by weight, and indium at 2-4% by weight. At least portions of magnesium, gallium, and indium are located in the grain boundaries. There are secondary phase particles, including Al—Mg Beta, Mg2Si, Mg and Al—Ga Gamma phases at the grain boundaries.

Abstract: The method for equal channel angular extrusion increases yield strength and ultimate tensile strength of a dissolvable aluminum alloy. A billet of a dissolvable aluminum alloy is wrapped with a sheet cover so as to form a wrapped billet. The wrapped billet is extruded through an equal channel angular extrusion die with an extrusion angle ranging 90-135 degrees so as to form an extruded billet. The step of extruding is at a temperature ranging 150-250 degrees C., an extrusion rate ranging 0.003-0.010 inches per second, and a back pressure ranging 200-10000 psi. The dissolvable aluminum alloy of the extruded billet has a yield strength and ultimate tensile strength 50% greater than the initial yield strength and initial ultimate tensile strength.

Abstract: This application provides a spherical image processing method which includes: obtaining a spherical image and determining a sphere center of the spherical image; determining a viewpoint of a user when the user views the spherical image, where the viewpoint is located at any point, other than the sphere center, in a sphere space surrounded by the spherical image; determining a pixel expansion region and a pixel shrinkage region on the spherical image based on the sphere center and the viewpoint; and performing an image processing operation on the spherical image, where the image processing operation comprises a pixel expansion processing operation on an image in the pixel expansion region, and a pixel shrinkage processing operation on an image in the pixel shrinkage region.

Abstract: An image processing method includes performing horizontal division and vertical division on a longitude-latitude map or a sphere map of a to-be-processed image to obtain sub-areas of the longitude-latitude map or the sphere map, where a division location of the horizontal division is a preset latitude, a division location of the vertical division is determined by a latitude, there are at least two types of vertical division intervals in an area formed by adjacent division locations of the horizontal division, and a vertical division interval is a distance between adjacent division locations of the vertical division, and encoding images of the sub-areas.

Abstract: Semiconductor devices and methods of forming the same include forming slanted dielectric structures from a first dielectric material on a substrate, with gaps between adjacent slanted dielectric structures. A first semiconductor layer is grown from the substrate, using a first semiconductor material, including a lower portion that fills the gaps and an upper portion above the first dielectric material. The lower portion of the first semiconductor layer is replaced with additional dielectric material.

Abstract: Embodiments of the invention are directed to a method of forming a semiconductor device. In a non-limiting example, the method includes forming a first channel region over a substrate, forming a second channel region over the first channel region, and forming a merged source or drain (S/D) region over the substrate and adjacent to the first channel region and the second channel region. The merged S/D region is communicatively coupled to the first channel region and the second channel region. A wrap-around S/D contact is formed such that it is on a top surface, sidewalls, and a bottom surface of the merged S/D region.

Abstract: This application provides a video processing method and apparatus. The method includes: adding, by a server, perception attribute information of an object and spatial location information of the object to a video bitstream or a video file, and encapsulating the video bitstream or the video file, where the perception attribute information is used to indicate a property presented when the object is perceived by a user; and obtaining, by a terminal device, the video bitstream or the video file that carries the perception attribute information of the object and the spatial location information of the object, and performing perception rendering on a perception attribute of the object based on behavior of the user, the perception attribute information of the object and the spatial location information of the object.

Abstract: A mobile station receives a downlink control structure in a first carrier, where the downlink control structure indicates that control information for the mobile station is on a second, different carrier. The mobile station decodes the control information in the second carrier, where the control information specifies resource allocation of a wireless link for the mobile station. More specifically, according to some implementations, the control channel in the first carrier specifies the resource allocation for an extended control channel in the second carrier, where the extended control channel specifies the resource allocation for traffic data of a wireless link for the mobile station.

Abstract: Semiconductor devices and methods of forming the same include forming slanted dielectric structures from a first dielectric material on a substrate, with gaps between adjacent slanted dielectric structures. A first semiconductor layer is grown from the substrate, using a first semiconductor material, including a lower portion that fills the gaps and an upper portion above the first dielectric material. The lower portion of the first semiconductor layer is replaced with additional dielectric material.

Abstract: An image processing method includes determining, based on a coordinate position of a to-be-interpolated sample in a target image, a first coordinate position of the to-be-interpolated sample in a source image, determining m reference samples based on the first coordinate position, determining an interpolation weight of each of the m reference samples for the to-be-interpolated sample based on a spherical distance between a coordinate position of each of the m reference samples and the first coordinate position, and determining a pixel value of the to-be-interpolated sample based on a pixel value corresponding to each of the m reference samples and the interpolation weight of each of the m reference samples for the to-be-interpolated sample to obtain the target image.

Abstract: A method for fabricating an electronic fuse includes forming a recess within a film material to define opposed contact segments and a central fuse segment interconnecting the contact segments and altering the material of the central fuse segment of the film material to increase electrical resistance characteristics of the central fuse segment. The central fuse segment may include defects such as voids created by directing a laser at the central fuse segment as a component of a laser annealing process. Alternatively, and or additionally, the central fuse segment may include dopants implementing via an ion implantation process to increase resistance characteristics of the central fuse segment.

Abstract: In some implementations, a method in a user equipment (UE) for supporting group communication service includes receiving, from a base station, a group communication on a Physical Downlink Shared Channel (PDSCH). The UE determines a first Hybrid Automatic Repeat reQuest (HARQ) information that corresponds to the group communication on the PDSCH. The UE transmits the first HARQ information. In some implementations, the UE determines a group Channel State Information (CSI) for a group communication that is transmitted by a base station on a PDSCH. The UE determines a unicast CSI for a unicast communication that is transmitted by the base station on the PDSCH. The UE transmits the group CSI. The UE transmits the unicast CSI.

Abstract: Disclosed herein is a jig for assembly of a battery module, the jig including a housing having a first accommodation portion configured to accommodate a battery cell and a second accommodation portion disposed so as to be spaced apart from the first accommodation portion, the second accommodation portion being configured to accommodate a circuit board in the state of being spaced apart from the battery cell, wherein the battery cell is accommodated in the first accommodation portion, and the circuit board is accommodated in the second accommodation portion, whereby the orientation of the circuit board with respect to the battery cell may be maintained.

Abstract: A method of forming a semiconductor structure includes forming a nanosheet stack over a substrate, the nanosheet stack including alternating sacrificial and channel layers, the channel layers providing nanosheet channels for nanosheet field-effect transistors. The method also includes forming vertical fins in the nanosheet stack and a portion of the substrate, and forming indents in sidewalls of the sacrificial layers at sidewalls of the vertical fins. The method further includes forming nanosheet extension regions in portions of the channel layers which extend from the indented sidewalls of the sacrificial layers to the sidewalls of the vertical fins, the nanosheet extension regions increasing in thickness from the indented sidewalls of the sacrificial layers to the sidewalls of the vertical fins. The method further includes forming inner spacers using a conformal deposition process that forms air gaps in spaces between the nanosheet extension regions and the indented sidewalls of the sacrificial layers.