Abstract: A time division duplexed (TDD) frequency modulation continuous wave (FMCW) radar system includes P transmitter circuit chains and M receiver circuit chains. The P transmitter circuit chains are used to transmit a plurality of FMCW signals. A pth transmitter circuit chain is coupled to a single pole Op throw (SPQPT) radio frequency (RF) switch, the SPOT RF switch is coupled to Op antennas, Qp and P are positive integers, and p is a positive integer not larger than P. The M receiver circuit chains are used to receive a plurality of reflected FMCW signals. An mth receiver circuit chain is coupled to a single pole Nm throw (SPNmT) radio frequency (RF) switch, the SPNmT RF switch is coupled to Nm antennas, Nm and M are positive integers, and m is a positive integer not larger than M.

Abstract: A MOS capacitor includes a substrate having a capacitor forming region thereon, an ion well having a first conductivity type in the substrate, a counter doping region having a second conductivity type in the ion well within the capacitor forming region, a capacitor dielectric layer on the ion well within the capacitor forming region, a gate electrode on the capacitor dielectric layer, a source doping region having the second conductivity type on a first side of the gate electrode within the capacitor forming region, and a drain doping region having the second conductivity type on a second side of the gate electrode within the capacitor forming region.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a fin structure formed over a substrate, and the fin structure includes a plurality of nanostructures stacked in a vertical direction. The semiconductor device structure includes a gate structure formed over the fin structure, and an S/D structure formed adjacent to the gate structure. The semiconductor device structure includes a first via formed adjacent to the S/D structure, and a first contact structure formed over the S/D structure. The semiconductor device structure includes a second contact structure formed below the S/D structure, and the first via is in direct contact with the first contact structure and the second contact structure.

Abstract: In a radar sensor, a transmitting antenna is configured to radiate a transmitted RF signal, a receiving antenna is configured to receive a reflected RF signal from a target, and a frontend circuit is configured to calculate the distance between the target and the radar sensor by measuring the frequency shift between the transmitted RF signal and the reflected RF signal. The frontend circuit includes a crystal-less signal synthesizer configured to generate the transmitted RF signal without using a crystal, and a mixer configured to provide an IF-band signal associated with the frequency shift between the transmitted RF signal and the reflected RF signal by mixing the reflected RF signal and the transmitted RF signal.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a first vertical structure and a second vertical structure formed over the substrate, and a conductive rail structure between the first and second vertical structures. A top surface of the conductive rail structure can be substantially coplanar with top surfaces of the first and the second vertical structures.

Abstract: The present disclosure describes a semiconductor structure with a metal ion capture layer and a method for forming the structure. The method includes forming a first fin structure and a second fin structure on a substrate and forming a first gate structure over the first fin structure and a second gate structure over the second fin structure, where the first gate structure adjoins the second gate structure. The method further includes forming a dielectric layer on the first and second gate structures, removing a portion of the dielectric layer above an adjoining portion of the first and second gate structures to form an opening, and forming a metal ion capture layer in the opening.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a first gradient layer, two source/drain structures, a second gradient layer, and a gate. The first gradient layer is disposed on the substrate. The two source/drain structures are separately disposed on the first gradient layer. The second gradient layer is disposed on the two source/drain structures and the first gradient layer, and a second portion of the second gradient layer directly contacts a first portion of the first gradient layer. The gate is disposed on the second gradient layer, between the two source/drain structures.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a first gradient layer, two source/drain structures, a second gradient layer, and a gate. The first gradient layer is disposed on the substrate. The two source/drain structures are separately disposed on the first gradient layer. The second gradient layer is disposed on the two source/drain structures and the first gradient layer, and a second portion of the second gradient layer directly contacts a first portion of the first gradient layer. The gate is disposed on the second gradient layer, between the two source/drain structures.

Abstract: A system capable of booting through a Universal Serial Bus device includes a Universal Serial Bus port, an embedded controller, a platform control hub, and a basic input/output system. The embedded controller is used for generating a boot signal when the system is powered off and at least one Universal Serial Bus device is plugged into the Universal Serial Bus port. The platform control hub is woken up according to the boot signal. The basic input/output system has boot sequence setting values. The basic input/output system first starts to boot the at least one Universal Serial Bus device through the platform control hub according to the boot sequence setting values when the basic input/output system is woken up according to the boot signal.

Abstract: A system capable of booting through a Universal Serial Bus device includes a Universal Serial Bus port, an embedded controller, a platform control hub, and a basic input/output system. The embedded controller is used for generating a boot signal when the system is powered off and at least one Universal Serial Bus device is plugged into the Universal Serial Bus port. The platform control hub is restored according to the boot signal. The basic input/output system has boot sequence setting values. The basic input/output system first starts to boot the at least one Universal Serial Bus device through the platform control hub according to the boot sequence setting values when the basic input/output system is restored according to the boot signal.

Abstract: A power control method for a computer system is disclosed. The computer system establishes wireless connection with a handheld equipment via a wireless communication interface. The power control method includes receiving a sound signal transmitted from the handheld equipment via the wireless communication interface when the computer system operates in a shut-down state, recognizing the sound signal to generate a recognition result, and starting the computer system when the recognition result indicates that the sound signal conforms to a start command.

Abstract: A wind power generating device for use with a vehicle is provided. The wind power generating device is disposed in a front side of an engine chamber of the vehicle and includes: at least one fan blade being driven to rotate by a current of external air introduced into the engine chamber in a manner of natural feeding while the vehicle is moving; a power generator for operating in conjunction with the fan blades and generating electric power; a duct circumferentially disposed at an outermost portion of the fan blades and having an opening, the opening receiving the fan blades, wherein the opening has a front opening portion functioning as a inlet for the external air and a rear opening portion functioning as an outlet for the external air, and the front opening portion being smaller than the rear opening portion.

Abstract: A wind power generating module for use with an electric scooter is disclosed. The wind power generating module is installed on an electric scooter and includes: at least one fan blade being driven to rotate by external air introduced into the wind power generating module while the electric scooter is moving; a disc type generator with a rotor configured to rotate in conjunction with the fan blades and generate electric power; a duct circumferentially disposed at an outermost portion of the fan blades and having an opening, the opening receiving the fan blades, wherein the opening has a front opening portion functioning as an inlet for the external air and a rear opening portion functioning as an outlet for the external air, the front opening portion being smaller than the rear opening portion; a front protective cover and a rear protective cover disposed at the inlet and the outlet, respectively.

Abstract: A method of preparing carbon-coated metal oxide nano-particles and carbon-coated metal oxide nano-particles prepared with the same method are described. The method includes the following steps at least. A precursor of a polymer is polymerized on metal oxide nano-particles to form polymer-coated metal oxide nano-particles. Then, pyrolysis is conducted to carbonize the polymer coated on the metal oxide nano-particles, so as to form carbon-coated metal oxide nano-particles.

Abstract: A method of preparing carbon-coated metal oxide nano-particles and carbon-coated metal oxide nano-particles prepared with the same method are described. The method includes the following steps at least. A precursor of a polymer is polymerized on metal oxide nano-particles to form polymer-coated metal oxide nano-particles. Then, pyrolysis is conducted to carbonize the polymer coated on the metal oxide nano-particles, so as to form carbon-coated metal oxide nano-particles.

Abstract: In one embodiment, wafers are processed to build test structures in the wafers. The wafers may be processed in tools of process steps belonging to a process module. The test structures may be tested to obtain defectivity data. Tool process parameters may be monitored and collected as process tool data. Other information about the wafers, such as metrology data and product layout attribute, may also be collected. A model describing the relationship between the defectivity data and process tool data may be created and thereafter used to relate the process tool data to a yield of the process module. The model may initially be an initial model using process tool data from a limited number of test wafers that contain test structures. The model may also be an expanded model using process tool data from product wafers containing embedded test structures in areas with no product devices.