Abstract: The present invention provides a semiconductor device, comprising: a substrate (10); a stack of III-nitride transition layers (11) disposed on the substrate (10), the stack of III-nitride transition layers (11) maintaining an epitaxial relationship to the substrate (10); a first III-nitride layer (121) disposed on the stack of III-nitride transition layers (11); and a second III-nitride layer (122) disposed on the first III-nitride layer (121), the second III-nitride layer (122) having a band gap energy greater than that of the first III-nitride layer (121), wherein the stack of III-nitride transition layers (11) comprises a first transition layer (111), a second transition layer (112) on the first transition layer (111), and a third transition layer (113) on the second transition layer (112), and wherein the second transition layer (112) has a minimum aluminium molar ratio among the first transition layer (111), the second transition layer (112) and third transition layer (113).

Abstract: A communication method and apparatus, the method including sending, by a terminal device, a random access request to a network device, where the random access request includes a random access preamble, control information, and user data, the terminal device is in an inactive state, and the control information includes at least a connection identifier and an authentication identifier, receiving, by the terminal device, a random access response sent by the network device, and performing, by the terminal device, a state transition AND/OR operation corresponding to a message format of the random access response.

Abstract: The invention discloses a method for preparing an anticorrosive surface layer of a metal material in a marine environment by laser, which belongs to the technical field of laser processing. First, the laser cladding method is used to prepare a cladding surface layer on the surface of the metal material that is not easy to undergo chemical substitution reaction with the chlorides (NaCl, MgCl2 , CaCl2 etc.) in the seawater. Then, on the surface of the cladding surface layer, ultrafast laser processing is used to form a surface layer with a wetting angle (and water) greater than 90 degrees and with hydrophobic characteristics.

Abstract: The subject technology determines a derived encryption key using a cryptographic hash function applied to a hybrid tenant master encryption key and a local random generated identifier. The subject technology encrypts a record value and a key value associated with a transaction using the derived encryption key. The subject technology determines a non-leaf node using a tenant prefix of a tenant. The subject technology inserts the encrypted record value at a leaf node below a non-leaf node of a tree structure associated with the tenant. The subject technology receives a second transaction for performing a read operation on a distributed database. The subject technology retrieves a set of encryption keys based at least in part on an account and the tenant. The subject technology decrypts, using the set of encryption keys, data from the distributed database. The subject technology provides the decrypted data as a result of the second transaction.

Abstract: Methods of manufacturing a semiconductor structure are provided. One of the methods includes: receiving a substrate including a first conductive region of a first transistor and a second conductive region of a second transistor, wherein the first transistor and the second transistor have different conductive types; performing an amorphization on the first conductive region and the second conductive region; performing an implantation over the first conductive region of the first transistor; forming a contact material layer over the first conductive region and the second conductive region; performing a thermal anneal on the first conductive region and the second conductive region; and performing a laser anneal on the first conductive region and the second conductive region.

Abstract: The present disclosure discloses a thermal plasma treatment method for sulfur hexafluoride (SF6) degradation. In the thermal plasma treatment method for SF6 degradation, Ar is input into a thermal plasma generator as a carrier gas; annular electrodes are electrically connected to a direct current power supply to generate an arc plasma region in the presence of the carrier gas Ar; to-be-reacted SF6 and to-be-reacted H2 in a predetermined ratio are input into the arc plasma region to generate hydrogen radicals as well as fluorine radicals, and the hydrogen radicals and the fluorine radicals are bonded with each other to generate HF to inhibit the self-recovery reaction of SF6; and final products include HF and elemental S.

Abstract: Provided are methods and compositions from reprogramming human glial cells into human neurons. The reprogramming is achieved using combinations of compounds that can modify signaling via Transforming growth factor beta (TGF-?), Bone morphogenetic protein (BMP), glycogen synthase kinase 3 (GSK-3), and ?-secretase/Notch pathways. The reprogramming is demonstrated using groups of three or four compounds that are chosen from the group thiazovivin, LDN193189, SB431542, TTNPB, CHIR99021, DAPT, VPA, SAG, purmorphamine. Reprogramming is demonstrated using the group of LDN193189/CHIR99021/DAPT, the group of B431542/CHIR99021/DAPT, the group of LDN193189/DAPT/SB431542, the group of LDN193189/CHIR99021/SB431542, a three drug combination of SB431542/CHIR99021/DAPT. Reprogramming using functional analogs of the compounds is also provided, as are pharmaceutical formulations that contain the drug combinations.

Abstract: A bond head is provided. The bond head includes a bond base, a chuck member, and an elastic material. The chuck member protrudes from a surface of the bond base, and has a chuck surface formed with vacuum holes for holding a die using differential air pressure. In the direction parallel to the chuck surface, the width of the chuck surface is less than the width of the bond base and is equal to or greater than the width of the die. The elastic material is disposed over the chuck surface. The elastic material is arranged around the periphery of the chuck surface to cover edges and/or corners of the chuck surface.

Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.

Abstract: An electronic device may have a phased antenna array. An antenna in the array may include a rectangular patch element with diagonal axes. The antenna may have first and second antenna feeds coupled to the patch element along the diagonal axes. The antenna may be rotated at a forty-five degree angle relative to other antennas in the array. The antenna may have one or two layers of parasitic elements overlapping the patch element. For example, the antenna may have a layer of coplanar parasitic patches separated by a gap. The antenna may also have an additional parasitic patch that is located farther from the patch element than the layer of coplanar parasitic patches. The additional parasitic patch may overlap the patch element and the gap in the coplanar parasitic patches. The antenna may exhibit a relatively small footprint and minimal mutual coupling with other antennas in the array.

Abstract: A method of forming a semiconductor device includes arranging a semi-finished substrate, which has been tested and is known to be good, on a carrier substrate. Encapsulating the semi-finished substrate in a first encapsulant and arranging at least one semiconductor die over the semi-finished substrate. Electrically coupling at least one semiconductor component of the at least one semiconductor die to the semi-finished substrate and encasing the at least one semiconductor die and portions of the first encapsulant in a second encapsulant. Removing the carrier substrate from the semi-finished substrate and bonding a plurality of external contacts to the semi-finished substrate.

Abstract: A thin film transistor includes a gate electrode embedded in an insulating layer that overlies a substrate, a gate dielectric overlying the gate electrode, an active layer comprising a compound semiconductor material and overlying the gate dielectric, and a source electrode and drain electrode contacting end portions of the active layer. The gate dielectric may have thicker portions over interfaces with the insulating layer to suppress hydrogen diffusion therethrough. Additionally or alternatively, a passivation capping dielectric including a dielectric metal oxide material may be interposed between the active layer and a dielectric layer overlying the active layer to suppress hydrogen diffusion therethrough.

Abstract: A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.

Abstract: Provided are a method and apparatus for evaluating a degree of frequency regulation urgency of a generator set, a power system and a storage medium.

Abstract: A method of forming a semiconductor device includes attaching a first local interconnect component to a first substrate with a first adhesive, forming a first redistribution structure over a first side of the first local interconnect component, and removing the first local interconnect component and the first redistribution structure from the first substrate and attaching the first redistribution structure to a second substrate. The method further includes removing the first adhesive from the first local interconnect component and forming an interconnect structure over a second side of the first local interconnect component and the first encapsulant, the second side being opposite the first side. A first conductive feature of the interconnect structure is physically and electrically coupled to a second conductive feature of the first local interconnect component.

Abstract: Provided are a cell strain for producing a biosimilar drug of Ustekinumab and a production method therefor. Specifically, provided is a Chinese hamster ovary cell S cell strain. The cell strain expresses a full human monoclonal antibody directed against the P40 subunit shared by human IL-12 and human IL-23. The fully human monoclonal antibody directed against the P40 subunit shared by human IL-12 and human IL-23 is a biosimilar drug of Ustekinumab, which not only exhibits high consistency with Ustekinumab in pre-clinical research, but also passes pharmacokinetic bioequivalence and safety similarity evaluation in clinical research. The biosimilar drug of Ustekinumab is the first one that has entered clinical trials in China, is the only one that has completed the I stage clinical trial, and is also one of the biosimilar drugs of Ustekinumab, which has the fastest progress in new drug application in the world.

Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.

Abstract: An assembly alignment structure for optical component is provided, including: an optical fiber, comprising: a combined fiber segment and a plurality of bare fiber segments; a cover plate, having a first installation surface disposed with a plurality of guide grooves, an installation groove, and at least one first coupling groove, the bare fiber segments being in the corresponding in the guide grooves; a lens, arranged in the installation groove; a chip, having a signal receiving surface; a carrier plate, having a second installation surface disposed with at least one second coupling groove, the chip is fixed on the second installation surface; and at least one positioning post; when the cover plate and carrier plate are aligned, the positioning post is located in the first and second coupling grooves, and the optical fiber and the lens are fixed and aligned between the carrier plate and the cover plate.

Abstract: A liquid leakage detecting module includes a liquid leakage detecting device, a monitoring device and a main wire. The liquid leakage detecting device includes a hub and a plurality of liquid leakage detection branches electrically connected to the hub in parallel. The hub is electrically connected to the monitoring device though the main wire.