Patents by Inventor Ying-Hsien Chen

Ying-Hsien Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250019129
    Abstract: A sealing structure includes a box body and a cover body. The box body includes a plurality of side walls respectively including a plurality of outer and inner portions, an annular groove formed on the inner portions, and an annular protrusion portion. Each outer portion has a level difference with the corresponding inner portion. Any two adjacent ones of the side walls form a corner portion. An outer surface of each corner portion forms a sharp corner. The annular groove is arc-shaped at a position corresponding to each corner portion. Each corner portion includes a hollowed-out area. The cover body includes a main body in a polygonal shape with sharp corners, an annular protrusion portion protruding from the main body, and an annular groove. The annular protrusion portions extend into the annular grooves, so that the cover body is sealedly joined to the box body.
    Type: Application
    Filed: July 11, 2024
    Publication date: January 16, 2025
    Applicant: Lite-On Technology Corporation
    Inventors: Yun Hao Fan, Chia Tsang Hsu, Wan-Chen Chen, Ying Hsien Chen, Shuo-Jen Shieh
  • Publication number: 20240379670
    Abstract: A semiconductor device includes a substrate with a high voltage region and a low voltage region. A first deep trench isolation is disposed within the high voltage region. The first deep trench isolation includes a first deep trench and a first insulating layer filling the first deep trench. The first deep trench includes a first sidewall and a second sidewall facing the first sidewall. The first sidewall is formed by a first plane and a second plane. The edge of the first plane connects to the edge of the second plane. The slope of the first plane is different from the slope of the second plane.
    Type: Application
    Filed: June 6, 2023
    Publication date: November 14, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Ya-Ting Hu, Chih-Yi Wang, Yao-Jhan Wang, Wei-Che Chen, Kun-Szu Tseng, Yun-Yang He, Wen-Liang Huang, Lung-En Kuo, Po-Tsang Chen, Po-Chang Lin, Ying-Hsien Chen
  • Publication number: 20240363430
    Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate having an active region as the substrate includes a medium-voltage (MV) region and a low-voltage (LV) region, forming a first divot adjacent to one side of the active region, forming a second divot adjacent to another side of the active region, forming a first liner in the first divot and the second divot and on the substrate of the MV region and LV region, forming a second liner on the first liner, and then removing the second liner, the first liner, and the substrate on the LV region for forming a fin-shaped structure.
    Type: Application
    Filed: May 31, 2023
    Publication date: October 31, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Yi Wang, Wei-Che Chen, Hung-Chun Lee, Yun-Yang He, Wei-Hao Chang, Chang-Yih Chen, Kun-Szu Tseng, Yao-Jhan Wang, Ying-Hsien Chen
  • Publication number: 20190378812
    Abstract: A device for producing semiconductor bump metal layer includes a front end transfer module including a normal pressure transfer chamber, a base material carrier, a heating and carrying interlock vacuum chamber, and a cooling interlock vacuum chamber; a pre-cooking device for receiving the plurality of base materials, forming high vacuum, and baking the base materials; a rear end cleaning sputtering module for receiving the plurality of base materials and cleaning the plurality of base materials and sputtering metal layers; then the plurality of base materials being transferred to the cooling interlock vacuum chamber. The robot in the normal pressure transfer chamber transfers the base materials to the pre-cooking device so as to bake the base materials in high vacuum to remove vapors in the plurality of base materials; then the base materials are transferred to the heating and carrying interlock vacuum chamber for baking again to a predetermined level.
    Type: Application
    Filed: June 10, 2018
    Publication date: December 12, 2019
    Inventors: Yu-Hung Huang, Ying Hsien Chen, Hsin Yu Yao, Wei Liang Chan, Kuei Chang Peng, Nai Wei Yu, Yi Hsiang Chen
  • Patent number: 10249729
    Abstract: A method for fabricating a semiconductor device. After forming SiGe epitaxial layer within the Core_p region, the hard mask is removed. A contact etch stop layer (CESL) is deposited on the composite spacer structure and the epitaxial layer. An ILD layer is deposited on the CESL. The ILD layer is polished to expose a top surface of the dummy gate. The dummy gate and a first portion of the first nitride-containing layer of the composite spacer structure are removed, thereby forming a gate trench and exposing the first gate dielectric layer. The first gate dielectric layer is removed from the gate trench, and a second portion of the first nitride-containing layer and the oxide layer are removed from the composite spacer structure, while leaving the second nitride-containing layer intact.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: April 2, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ying-Hsien Chen, Chun-Chia Chen, Yao-Jhan Wang, Chih-wei Yang, Te-Chang Hsu
  • Patent number: 10038022
    Abstract: A light detector including an invisible light converting substrate, a light sensing element, a first protection layer, a thin film transistor, a first conductive pattern and a second protection layer is provided. The light sensing element and the thin film transistor are disposed on the invisible light converting substrate. The first protection layer covers the invisible light converting substrate and a second electrode of the light sensing element. The first protection layer has a via overlapped with the second electrode of the light sensing element. The first conductive pattern is disposed on the first protection layer and electrically connected to the second electrode of the light sensing element through the via of the first protection layer. The first conductive pattern is electrically connected between the second electrode of the light sensing element and a source of the thin film transistor.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: July 31, 2018
    Assignee: Au Optronics Corporation
    Inventors: Te-Ming Chen, Tsung-Han Chen, Sheng-Chen Wu, Geng-Qun Zhou, Ying-Hsien Chen
  • Publication number: 20160365465
    Abstract: A manufacturing method of a sensor including the following steps and a sensor are provided. An active device and a first insulation layer covering the active device are formed on a substrate. The first insulation layer has a first opening exposing a portion of the active device. A blanket conductive layer is formed on the first insulation layer using a conductive material. The blanket conductive layer is connected to the active device through the first opening. A photoelectric conversion material layer is formed on the blanket conductive layer. A first photoresist pattern formed on photoelectric conversion material layer is served as a mask for patterning the photoelectric conversion material layer into a photoelectric conversion unit. The blanket conductive layer is patterned to form a first electrode disposed in the first opening and electrically connecting the photoelectric conversion unit to the active device.
    Type: Application
    Filed: September 4, 2015
    Publication date: December 15, 2016
    Inventors: Zao-Shi Zheng, Ying-Hsien Chen, Wen-Bin Hsu
  • Patent number: 7704116
    Abstract: Methods for fabricating field emission display devices. A first substrate is provided. A cathode structure is formed on the first substrate. A surface treatment procedure is performed on the first substrate with cathode structure thereon. A second substrate opposing the first substrate is provided and assembled in vacuum with a wall rib therebetween. The surface treatment procedure includes free radical oxidization and a supercritical CO2 fluid cleaning.
    Type: Grant
    Filed: July 9, 2007
    Date of Patent: April 27, 2010
    Assignee: Industrial Technology Research Institute
    Inventors: Yau-Chen Jiang, Ming-Chun Hsiao, Ying-Hsien Chen, Kuang-Chung Chen
  • Patent number: 7632166
    Abstract: A method for improving vacuum is applicable to a process of fabricating a vacuum display. The residual gas or lightwave heating material in the vacuum display is irradiated with at least one type of light source, such that the residual gas in the vacuum display acquires kinetic energy. Then, the residual gas is efficiently absorbed by a vacuum pump or at least one getter, and thereby the vacuum of the vacuum display is improved.
    Type: Grant
    Filed: February 28, 2006
    Date of Patent: December 15, 2009
    Assignee: Industrial Technology Research Institute
    Inventors: Lin-En Chou, Wei-Yi Lin, Cheng-Chung Lee, Ying-Hsien Chen
  • Publication number: 20080014821
    Abstract: Methods for fabricating field emission display devices. A first substrate is provided. A cathode structure is formed on the first substrate. A surface treatment procedure is performed on the first substrate with cathode structure thereon. A second substrate opposing the first substrate is provided and assembled in vacuum with a wall rib therebetween. The surface treatment procedure includes free radical oxidization and a supercritical CO2 fluid cleaning.
    Type: Application
    Filed: July 9, 2007
    Publication date: January 17, 2008
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yau-Chen Jiang, Ming-Chun Hsiao, Ying-Hsien Chen, Kuang-Chung Chen
  • Publication number: 20070159059
    Abstract: An anode plate for a field emission display device (FED) is disclosed, which has a substrate; an anode conductive layer formed on the substrate; at least one interspacing conductive band having a plurality of internal gaps for connecting the anode conductive layer and external cable lines, wherein the interspacing conductive band covers a part of the anode conductive layer; and a fluorescent layer located on the anode conductive layer, to serve as a source of luminescence for a field emission display device. The field emission display device includes the anode plate aforesaid as is also disclosed.
    Type: Application
    Filed: February 20, 2007
    Publication date: July 12, 2007
    Applicant: Industrial Technology Research Institute
    Inventors: Ying-Hsien Chen, Cheng-Chung Lee, Wen-Kuei Huang, Wei-Yi Lin, Jia-Chong Ho, Yu-Yang Chang, Ming-Chun Hsiao, Yun-Chiao Hsiao
  • Publication number: 20070060007
    Abstract: A method for improving vacuum is applicable to a process of fabricating a vacuum display. The residual gas or lightwave heating material in the vacuum display is irradiated with at least one type of light source, such that the residual gas in the vacuum display acquires kinetic energy. Then, the residual gas is efficiently absorbed by a vacuum pump or at least one getter, and thereby the vacuum of the vacuum display is improved.
    Type: Application
    Filed: February 28, 2006
    Publication date: March 15, 2007
    Inventors: Lin-En Chou, Wei-Yi Lin, Cheng-Chung Lee, Ying-Hsien Chen
  • Publication number: 20050046335
    Abstract: An anode plate for a field emission display device (FED) is disclosed, which has a substrate; an anode conductive layer formed on the substrate; at least one interspacing conductive band having a plurality of internal gaps for connecting the anode conductive layer and external cable lines, wherein the interspacing conductive band covers a part of the anode conductive layer; and a fluorescent layer located on the anode conductive layer, to serve as a source of luminescence for a field emission display device. The field emission display device includes the anode plate aforesaid as is also disclosed.
    Type: Application
    Filed: January 21, 2004
    Publication date: March 3, 2005
    Applicant: Industrial Technology Research Institute
    Inventors: Ying-Hsien Chen, Cheng-Chung Lee, Wen-Kuei Huang, Wei-Yi Lin, Jia-Chong Ho, Yu-Yang Chang, Ming-Chun Hsiao, Yun-Chiao Hsiao