Patents by Inventor Ying-Hsien Chen
Ying-Hsien Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250019129Abstract: A sealing structure includes a box body and a cover body. The box body includes a plurality of side walls respectively including a plurality of outer and inner portions, an annular groove formed on the inner portions, and an annular protrusion portion. Each outer portion has a level difference with the corresponding inner portion. Any two adjacent ones of the side walls form a corner portion. An outer surface of each corner portion forms a sharp corner. The annular groove is arc-shaped at a position corresponding to each corner portion. Each corner portion includes a hollowed-out area. The cover body includes a main body in a polygonal shape with sharp corners, an annular protrusion portion protruding from the main body, and an annular groove. The annular protrusion portions extend into the annular grooves, so that the cover body is sealedly joined to the box body.Type: ApplicationFiled: July 11, 2024Publication date: January 16, 2025Applicant: Lite-On Technology CorporationInventors: Yun Hao Fan, Chia Tsang Hsu, Wan-Chen Chen, Ying Hsien Chen, Shuo-Jen Shieh
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Publication number: 20240379670Abstract: A semiconductor device includes a substrate with a high voltage region and a low voltage region. A first deep trench isolation is disposed within the high voltage region. The first deep trench isolation includes a first deep trench and a first insulating layer filling the first deep trench. The first deep trench includes a first sidewall and a second sidewall facing the first sidewall. The first sidewall is formed by a first plane and a second plane. The edge of the first plane connects to the edge of the second plane. The slope of the first plane is different from the slope of the second plane.Type: ApplicationFiled: June 6, 2023Publication date: November 14, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ya-Ting Hu, Chih-Yi Wang, Yao-Jhan Wang, Wei-Che Chen, Kun-Szu Tseng, Yun-Yang He, Wen-Liang Huang, Lung-En Kuo, Po-Tsang Chen, Po-Chang Lin, Ying-Hsien Chen
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Publication number: 20240363430Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate having an active region as the substrate includes a medium-voltage (MV) region and a low-voltage (LV) region, forming a first divot adjacent to one side of the active region, forming a second divot adjacent to another side of the active region, forming a first liner in the first divot and the second divot and on the substrate of the MV region and LV region, forming a second liner on the first liner, and then removing the second liner, the first liner, and the substrate on the LV region for forming a fin-shaped structure.Type: ApplicationFiled: May 31, 2023Publication date: October 31, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chih-Yi Wang, Wei-Che Chen, Hung-Chun Lee, Yun-Yang He, Wei-Hao Chang, Chang-Yih Chen, Kun-Szu Tseng, Yao-Jhan Wang, Ying-Hsien Chen
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Publication number: 20190378812Abstract: A device for producing semiconductor bump metal layer includes a front end transfer module including a normal pressure transfer chamber, a base material carrier, a heating and carrying interlock vacuum chamber, and a cooling interlock vacuum chamber; a pre-cooking device for receiving the plurality of base materials, forming high vacuum, and baking the base materials; a rear end cleaning sputtering module for receiving the plurality of base materials and cleaning the plurality of base materials and sputtering metal layers; then the plurality of base materials being transferred to the cooling interlock vacuum chamber. The robot in the normal pressure transfer chamber transfers the base materials to the pre-cooking device so as to bake the base materials in high vacuum to remove vapors in the plurality of base materials; then the base materials are transferred to the heating and carrying interlock vacuum chamber for baking again to a predetermined level.Type: ApplicationFiled: June 10, 2018Publication date: December 12, 2019Inventors: Yu-Hung Huang, Ying Hsien Chen, Hsin Yu Yao, Wei Liang Chan, Kuei Chang Peng, Nai Wei Yu, Yi Hsiang Chen
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Patent number: 10249729Abstract: A method for fabricating a semiconductor device. After forming SiGe epitaxial layer within the Core_p region, the hard mask is removed. A contact etch stop layer (CESL) is deposited on the composite spacer structure and the epitaxial layer. An ILD layer is deposited on the CESL. The ILD layer is polished to expose a top surface of the dummy gate. The dummy gate and a first portion of the first nitride-containing layer of the composite spacer structure are removed, thereby forming a gate trench and exposing the first gate dielectric layer. The first gate dielectric layer is removed from the gate trench, and a second portion of the first nitride-containing layer and the oxide layer are removed from the composite spacer structure, while leaving the second nitride-containing layer intact.Type: GrantFiled: December 5, 2017Date of Patent: April 2, 2019Assignee: UNITED MICROELECTRONICS CORP.Inventors: Ying-Hsien Chen, Chun-Chia Chen, Yao-Jhan Wang, Chih-wei Yang, Te-Chang Hsu
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Patent number: 10038022Abstract: A light detector including an invisible light converting substrate, a light sensing element, a first protection layer, a thin film transistor, a first conductive pattern and a second protection layer is provided. The light sensing element and the thin film transistor are disposed on the invisible light converting substrate. The first protection layer covers the invisible light converting substrate and a second electrode of the light sensing element. The first protection layer has a via overlapped with the second electrode of the light sensing element. The first conductive pattern is disposed on the first protection layer and electrically connected to the second electrode of the light sensing element through the via of the first protection layer. The first conductive pattern is electrically connected between the second electrode of the light sensing element and a source of the thin film transistor.Type: GrantFiled: October 16, 2017Date of Patent: July 31, 2018Assignee: Au Optronics CorporationInventors: Te-Ming Chen, Tsung-Han Chen, Sheng-Chen Wu, Geng-Qun Zhou, Ying-Hsien Chen
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Publication number: 20160365465Abstract: A manufacturing method of a sensor including the following steps and a sensor are provided. An active device and a first insulation layer covering the active device are formed on a substrate. The first insulation layer has a first opening exposing a portion of the active device. A blanket conductive layer is formed on the first insulation layer using a conductive material. The blanket conductive layer is connected to the active device through the first opening. A photoelectric conversion material layer is formed on the blanket conductive layer. A first photoresist pattern formed on photoelectric conversion material layer is served as a mask for patterning the photoelectric conversion material layer into a photoelectric conversion unit. The blanket conductive layer is patterned to form a first electrode disposed in the first opening and electrically connecting the photoelectric conversion unit to the active device.Type: ApplicationFiled: September 4, 2015Publication date: December 15, 2016Inventors: Zao-Shi Zheng, Ying-Hsien Chen, Wen-Bin Hsu
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Patent number: 7704116Abstract: Methods for fabricating field emission display devices. A first substrate is provided. A cathode structure is formed on the first substrate. A surface treatment procedure is performed on the first substrate with cathode structure thereon. A second substrate opposing the first substrate is provided and assembled in vacuum with a wall rib therebetween. The surface treatment procedure includes free radical oxidization and a supercritical CO2 fluid cleaning.Type: GrantFiled: July 9, 2007Date of Patent: April 27, 2010Assignee: Industrial Technology Research InstituteInventors: Yau-Chen Jiang, Ming-Chun Hsiao, Ying-Hsien Chen, Kuang-Chung Chen
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Patent number: 7632166Abstract: A method for improving vacuum is applicable to a process of fabricating a vacuum display. The residual gas or lightwave heating material in the vacuum display is irradiated with at least one type of light source, such that the residual gas in the vacuum display acquires kinetic energy. Then, the residual gas is efficiently absorbed by a vacuum pump or at least one getter, and thereby the vacuum of the vacuum display is improved.Type: GrantFiled: February 28, 2006Date of Patent: December 15, 2009Assignee: Industrial Technology Research InstituteInventors: Lin-En Chou, Wei-Yi Lin, Cheng-Chung Lee, Ying-Hsien Chen
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Publication number: 20080014821Abstract: Methods for fabricating field emission display devices. A first substrate is provided. A cathode structure is formed on the first substrate. A surface treatment procedure is performed on the first substrate with cathode structure thereon. A second substrate opposing the first substrate is provided and assembled in vacuum with a wall rib therebetween. The surface treatment procedure includes free radical oxidization and a supercritical CO2 fluid cleaning.Type: ApplicationFiled: July 9, 2007Publication date: January 17, 2008Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yau-Chen Jiang, Ming-Chun Hsiao, Ying-Hsien Chen, Kuang-Chung Chen
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Publication number: 20070159059Abstract: An anode plate for a field emission display device (FED) is disclosed, which has a substrate; an anode conductive layer formed on the substrate; at least one interspacing conductive band having a plurality of internal gaps for connecting the anode conductive layer and external cable lines, wherein the interspacing conductive band covers a part of the anode conductive layer; and a fluorescent layer located on the anode conductive layer, to serve as a source of luminescence for a field emission display device. The field emission display device includes the anode plate aforesaid as is also disclosed.Type: ApplicationFiled: February 20, 2007Publication date: July 12, 2007Applicant: Industrial Technology Research InstituteInventors: Ying-Hsien Chen, Cheng-Chung Lee, Wen-Kuei Huang, Wei-Yi Lin, Jia-Chong Ho, Yu-Yang Chang, Ming-Chun Hsiao, Yun-Chiao Hsiao
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Publication number: 20070060007Abstract: A method for improving vacuum is applicable to a process of fabricating a vacuum display. The residual gas or lightwave heating material in the vacuum display is irradiated with at least one type of light source, such that the residual gas in the vacuum display acquires kinetic energy. Then, the residual gas is efficiently absorbed by a vacuum pump or at least one getter, and thereby the vacuum of the vacuum display is improved.Type: ApplicationFiled: February 28, 2006Publication date: March 15, 2007Inventors: Lin-En Chou, Wei-Yi Lin, Cheng-Chung Lee, Ying-Hsien Chen
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Publication number: 20050046335Abstract: An anode plate for a field emission display device (FED) is disclosed, which has a substrate; an anode conductive layer formed on the substrate; at least one interspacing conductive band having a plurality of internal gaps for connecting the anode conductive layer and external cable lines, wherein the interspacing conductive band covers a part of the anode conductive layer; and a fluorescent layer located on the anode conductive layer, to serve as a source of luminescence for a field emission display device. The field emission display device includes the anode plate aforesaid as is also disclosed.Type: ApplicationFiled: January 21, 2004Publication date: March 3, 2005Applicant: Industrial Technology Research InstituteInventors: Ying-Hsien Chen, Cheng-Chung Lee, Wen-Kuei Huang, Wei-Yi Lin, Jia-Chong Ho, Yu-Yang Chang, Ming-Chun Hsiao, Yun-Chiao Hsiao