Abstract: In an approach to threshold setting for pie charts, a computing device displays one or more pie charts. The computing device receives an instruction to enter Threshold-Setting Mode. The computing device displays one or more threshold-setting flags associated with one or more pie chart slices and one or more indicators associated with the one or more pie chart slices. The computing device receives an instruction to set a threshold associated with a slice. The computing device updates a percentage displayed on an indicator associated with the threshold. The computing device displays the threshold as a virtual slice.

Abstract: A preparation method of original dye of Vat Brown R comprises the following steps: a. after acylation of 1,5-diaminoanthraquinone, 1-amino-5-benzamidoanthraquinone was prepared by acidic hydrolysis; b. 1-benzamido-4-bromoanthraquinone was obtained from 1-aminoanthraquinone by acylation and bromination; c. a condensate of Vat Brown R was obtained by condensation reaction of 1-amino-5-benzamidoanthraquinone and 1-benzamido-4-bromoanthraquinone; d. the original dye of Vat Brown R was obtained from the condensate of Vat Brown R by ring closing reaction and oxidation reaction. The method omits one oxidation step, economizes significant amount of oxidizing agent, and reduces significant amount of waste water, so it is very beneficial to environment protection; and the method also exhibited the advantages of highly increasing product yield and reducing the costs of raw materials to an extent of more than 30%.

Abstract: Systems and methods for use in reading and locating passive RFID tags. A reader/locator system sends out a signal with varying frequency. A tag reflects the signal back and the receiver portion of the reader/locator system receives the signal after a certain propagation delay. Since during this propagation delay the transmit frequency has changed, the received signal frequency differs from the one is currently transmitted. The received signal gets mixed with the currently transmitted signal and the resulting beat frequency depends on the frequency variation pattern (which is known) and the signal propagation delay. This beat frequency is directly proportional to the distance between the reader/locator and the RFID tag. The beat frequency can therefore be used to estimate this distance between the reader/locator and the RFID tag.

Abstract: A method for processing semiconductor devices includes providing a semiconductor substrate. The method includes forming a pad oxide layer overlying the substrate and forming a silicon nitride layer overlying the pad oxide layer. The method includes forming a trench region extending through an entirety of a portion of the silicon nitride layer and extends into a depth of the semiconductor substrate. The method also includes filling the trench region with an oxide material. The oxide material extends from a bottom portion of the trench region to an upper surface of the silicon nitride layer. The method includes planarizing the oxide material and selectively removing the silicon nitride layer to form an isolation structure. A polysilicon material is deposited overlying the isolation structure. The polysilicon material is planarized to expose a top portion of the isolation structure and form a first electrode and a second electrode structures separated by a portion of the isolation structure.

Abstract: A method for processing semiconductor devices includes providing a semiconductor substrate. The method includes forming a pad oxide layer overlying the substrate and forming a silicon nitride layer overlying the pad oxide layer. The method includes forming a trench region extending through an entirety of a portion of the silicon nitride layer and extends into a depth of the semiconductor substrate. The method also includes filling the trench region with an oxide material. The oxide material extends from a bottom portion of the trench region to an upper surface of the silicon nitride layer. The method includes planarizing the oxide material and selectively removing the silicon nitride layer to form an isolation structure. A polysilicon material is deposited overlying the isolation structure. The polysilicon material is planarized to expose a top portion of the isolation structure and form a first electrode and a second electrode structures separated by a portion of the isolation structure.