Patents by Inventor Ying-Shih HSIAO

Ying-Shih HSIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140020386
    Abstract: The invention related gas recovering system contains at least one gas supply system, a gas treatment system, and a gas separation system. The gas supply system includes a gas supply unit and a supply source. The gas treatment system includes a gas reactor and a gas reduction device. Also, the gas separation system includes a first exhaust unit, a purifying unit, a second exhaust unit and a heating evaporation unit. The gas recovering system can avoid the unnecessary waste of gas to form hazardous waste. Therefore, gas can make more effective use to reduce cost.
    Type: Application
    Filed: March 8, 2013
    Publication date: January 23, 2014
    Applicants: KERN ENERGY ENTERPRISE CO., LTD.
    Inventors: Ying-Shih HSIAO, Hitoshi SAKAMOTO
  • Patent number: 8591824
    Abstract: The heat treating furnace for the gas reaction includes an outer body, an inner body, a heating mechanism, gas supplying mechanism, and a controller. Using the controller to control the amount of gas supply effectively keeps the first pressure (P1) in the gas circulation chamber outside the inner body greater than the second pressure (P2) in the reaction chamber inside the inner body all the time. In this way, the flow rate of gas inlet, reaction rate, cooling rate can be facilitated, and the uniformity of the thin film and the operational safety can be improved.
    Type: Grant
    Filed: December 28, 2011
    Date of Patent: November 26, 2013
    Assignees: Kern Energy Enterprise Co., Ltd.
    Inventors: Ying-Shih Hsiao, Toshiaki Yoshimura
  • Publication number: 20130308929
    Abstract: A substrate surface treatment equipment includes a chamber, a ultraviolet ray lamp, an infrared heating element, a blackbody radiation plate and a vacuum extractor. The equipment can do the substrate surface treatment. The substrate surface treatment equipment can wash or modify the substrate surface. Therefore, after the washing and modifying of the substrate surface, the substrate surface can include a better adhesion when processing a thin film deposition or a colloid suspension coating.
    Type: Application
    Filed: December 5, 2012
    Publication date: November 21, 2013
    Applicant: KERN ENERGY ENTERPRISE CO., LTD.
    Inventor: Ying-Shih HSIAO
  • Publication number: 20130125797
    Abstract: The vertical heat treating furnace for the gas reaction includes an outer body, an inner body, a heating mechanism, gas supplying mechanism, and a controller. Using the controller to control the amount of gas supply effectively keeps the first pressure (P1) in the gas circulation chamber outside the inner body greater than the second pressure (P2) in the reaction chamber inside the inner body all the time. In this way, the flow rate of gas inlet, reaction rate, cooling rate can be facilitated, and the uniformity of the thin film and the operational safety can be improved.
    Type: Application
    Filed: February 14, 2012
    Publication date: May 23, 2013
    Inventors: Ying-Shih HSIAO, Toshiaki Yoshimura
  • Publication number: 20130084216
    Abstract: The heat treating furnace for the gas reaction includes an outer body, an inner body, a heating mechanism, gas supplying mechanism, and a controller. Using the controller to control the amount of gas supply effectively keeps the first pressure (P1) in the gas circulation chamber outside the inner body greater than the second pressure (P2) in the reaction chamber inside the inner body all the time. In this way, the flow rate of gas inlet, reaction rate, cooling rate can be facilitated, and the uniformity of the thin film and the operational safety can be improved.
    Type: Application
    Filed: December 28, 2011
    Publication date: April 4, 2013
    Inventors: Ying-Shih HSIAO, Toshiaki YOSHIMURA
  • Publication number: 20130072000
    Abstract: This invention discloses a thin film processing equipment for depositing a film on a substrate and a process for depositing a film on a substrate using the same. The thin film processing equipment comprises a reaction chamber, a gas supplying mechanism, and a transferring mechanism. The thin film processing equipment is characterized in that a gas supplying mechanism is capable of moving up-and-down or left-and-right, and a tray is capable of moving up-and-down, thereby the distance between the gas supplying mechanism and the substrate can be adjusted.
    Type: Application
    Filed: December 22, 2011
    Publication date: March 21, 2013
    Inventors: Ying-Shih Hsiao, Toshiaki Yoshimura
  • Publication number: 20130071567
    Abstract: This invention discloses a thin film process equipment for depositing a film on a substrate and a process of forming the film using the same. The thin film process apparatus comprises a reaction chamber, a gas supplying mechanism, and a transferring mechanism. The film processing equipment is characterized in that the gas supplying mechanism is formed by a plurality of gas supplying ports in form of the concentric-circle structure for spraying down different kinds of gas, so that the mixing of different kinds of gas become uniform, thus facilitate the gas reaction and the formation of films.
    Type: Application
    Filed: December 22, 2011
    Publication date: March 21, 2013
    Inventors: Ying-Shih HSIAO, Toshiaki Yoshimura