Patents by Inventor Yingbin HU

Yingbin HU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11145230
    Abstract: Embodiments of the present disclosure provide a method and a device for detecting a threshold voltage drift of a transistor in a pixel circuit, which are used for detecting the threshold voltage drift of the transistor to be detected in the pixel circuit. The transistor to be detected is at least one of the driving transistor and the detection transistor. The detection method comprises: inputting, during an inputting stage, a first turning-on voltage to the second scanning terminal, so as to turn on the detection transistor, enabling writing a first voltage into the second node through the detection signal terminal; inputting, during a detection stage, a first turning-off voltage to the second scanning terminal, so as to turn off the detection transistor, thereby detecting an actual voltage at the second node; and determining a state of the threshold voltage drift of the transistor to be detected according to the actual voltage and the first voltage.
    Type: Grant
    Filed: June 11, 2020
    Date of Patent: October 12, 2021
    Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Jun Wang, Dongfang Wang, Liangchen Yan, Guangyao Li, Haitao Wang, Qinghe Wang, Yingbin Hu, Yang Zhang, Tongshang Su
  • Publication number: 20210305337
    Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.
    Type: Application
    Filed: June 14, 2021
    Publication date: September 30, 2021
    Applicants: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Wei Song, Liangchen Yan, Ce Zhao, Dongfang Wang, Bin Zhou, Yuankui Ding, Jun Liu, Yingbin Hu, Wei Li
  • Publication number: 20210296368
    Abstract: Provided are a display substrate and a manufacturing method therefor, and a display panel and a display apparatus. The gate insulation layer included in the display substrate comprises a first branch portion located between the gate electrode and the active layer, and a second branch portion located below an overlapping region of the first routing and the second routing; a part, extending out of the gate electrode, of the first branch portion has a first width value; at the overlapping region between the second routing and the first routing, a part, extending out of the first routing, of the second branch portion has a second width value; and the first width value is greater than the second width value.
    Type: Application
    Filed: June 15, 2020
    Publication date: September 23, 2021
    Inventors: Wei SONG, Ce ZHAO, Yuankui DING, Ming WANG, Ning LIU, Yingbin HU, Junlin PENG, Liusong NI
  • Publication number: 20210288283
    Abstract: A light-emitting device includes: an anode disposed on a base, and a cathode disposed on a side of the anode facing away from the base. The anode includes a light-reflecting sub-electrode and a light-transmitting sub-electrode located on a surface of the light-reflecting sub-electrode facing away from the base, and an orthographic projection of the light-transmitting sub-electrode on the base is located within a range of an orthographic projection of the light-reflecting sub-electrode on the base. The light-reflecting sub-electrode includes a metal pattern and a metal oxide pattern, and the metal oxide pattern is located in at least part of a region around the metal pattern.
    Type: Application
    Filed: May 27, 2020
    Publication date: September 16, 2021
    Inventors: Wei SONG, Ce ZHAO, Yuankui DING, Ming WANG, Ning LIU, Leilei CHENG, Junlin PENG, Yingbin HU, Liusong NI
  • Publication number: 20210265510
    Abstract: The disclosure provides a thin film transistor, a manufacturing method thereof, a display substrate and a display apparatus. The thin film transistor comprises a base substrate, and an active layer disposed on the base substrate, and the active layer comprises a channel region, and a source contact region and a drain contact region respectively positioned at two sides of the channel region; and a portion of at least one of the source contact region and the drain contact region close to the channel region includes a plurality of first sub-grooves disposed at a side of the active layer proximal to the base substrate and a plurality of second sub-grooves disposed at a side of the active layer distal to the base substrate, and the plurality of first sub-grooves and the plurality of second sub-grooves being alternately disposed along a direction parallel to an extension of the channel region.
    Type: Application
    Filed: April 8, 2020
    Publication date: August 26, 2021
    Inventors: Yingbin HU, Ce ZHAO, Yuankui DING, Wei SONG, Liusong NI, Xuechao SUN, Chaowei HAO, Liangchen YAN
  • Publication number: 20210265392
    Abstract: This disclosure discloses an array substrate, and a production method, a display panel, and a display apparatus thereof. Particularly, this disclosure proposes a method of producing an array substrate, having the following steps: providing a substrate having a drive transistor region and a switch transistor region thereon; forming an preset layer for active layer on a side of the substrate; patterning the preset layer for active layer to form a drive active layer and a switch active layer, wherein an orthographic projection of the drive active layer on the substrate is located in the drive transistor region, an orthographic projection of the switch active layer on the substrate is located in the switch transistor region, and a carrier concentration in the drive active layer is less than a carrier concentration in the switch active layer.
    Type: Application
    Filed: April 16, 2020
    Publication date: August 26, 2021
    Inventors: Wei Song, Ce Zhao, Yuankui Ding, Ming Wang, Yingbin Hu, Qinghe Wang, Wei Li, Liusong Ni
  • Publication number: 20210257428
    Abstract: The present disclosure provides a display substrate and a manufacturing method thereof, and a display device, and relates to the field of display technology. The display substrate includes a base substrate and a thin film transistor array. The thin film transistor array includes a plurality of thin film transistors. A first electrode in each thin film transistor includes a first portion and a second portion having a height difference therebetween, and a height of the second portion is greater than a height of the first portion in a direction perpendicular to the base substrate.
    Type: Application
    Filed: February 26, 2020
    Publication date: August 19, 2021
    Inventors: Wei SONG, Ce ZHAO, Yuankui DING, Heekyu KIM, Ming WANG, Ning LIU, Yingbin HU
  • Patent number: 11081501
    Abstract: A thin film transistor and a method of fabricating the same, an array substrate and a method of fabricating the same, and a display device are provided, the method of fabricating a thin film transistor includes: forming an active layer on a base substrate; forming a metal layer on the active layer; and processing the metal layer to form a source electrode, a drain electrode, and a metal oxide layer, the metal oxide layer covering the source electrode, the drain electrode, and the active layer, the source electrode and the drain electrode being spaced apart and insulated from each other by the metal oxide layer.
    Type: Grant
    Filed: April 26, 2019
    Date of Patent: August 3, 2021
    Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Wei Song, Ce Zhao, Bin Zhou, Dongfang Wang, Yuankui Ding, Jun Liu, Yingbin Hu, Wei Li
  • Patent number: 11075227
    Abstract: A display substrate, a method for manufacturing the display substrate, and a display device are provided. The display substrate includes a display area and a fanout area at the periphery of the display area. The fanout area includes a data line layer, a first power line layer, and at least two insulation layers between the data line layer and the first power line layer. In a direction perpendicular to a base substrate of the display substrate, the first power line layer overlaps the data line layer. At least one of the at least two insulation layers includes a portion which insulates the first power line layer and the data line layer from each other.
    Type: Grant
    Filed: August 30, 2019
    Date of Patent: July 27, 2021
    Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Jun Wang, Dongfang Wang, Haitao Wang, Guangyao Li, Yingbin Hu, Yang Zhang, Qinghe Wang, Liangchen Yan
  • Publication number: 20210225886
    Abstract: A thin film transistor, a display panel and a preparation method thereof and a display apparatus are provided. The thin film transistor includes: a substrate; a gate metal located on a side of the substrate; a gate insulating layer located on a side of the gate metal away from the substrate; an active layer located on a side of the gate insulating layer away from the substrate; a first metal oxide and a second metal oxide which are located on a side of the active layer away from the substrate and are arranged on a same layer; and a source metal and a drain metal which are located on sides of the first metal oxide and the second metal oxide away from the substrate and are arranged in a same layer.
    Type: Application
    Filed: July 23, 2020
    Publication date: July 22, 2021
    Inventors: Qinghe WANG, Tongshang SU, Yongchao HUANG, Yingbin HU, Yang ZHANG, Haitao WANG, Ning LIU, Guangyao LI, Zheng WANG, Yu JI, Jinliang HU, Wei SONG, Jun CHENG, Liangchen YAN
  • Patent number: 11069758
    Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.
    Type: Grant
    Filed: June 10, 2019
    Date of Patent: July 20, 2021
    Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Wei Song, Liangchen Yan, Ce Zhao, Dongfang Wang, Bin Zhou, Yuankui Ding, Jun Liu, Yingbin Hu, Wei Li
  • Publication number: 20210200090
    Abstract: A patterning method and a method for manufacturing an array substrate are provided, and the patterning method includes: forming a photolithography auxiliary film and a positive photoresist film in turn on a base substrate provided with a layer to be patterned; subjecting the photolithography auxiliary film and the positive photoresist film to a photolithography process to form a photolithography auxiliary layer pattern and a positive photoresist pattern; patterning the layer to be patterned; and UV irradiating the photolithography auxiliary layer pattern and the positive photoresist pattern and then removing the photolithography auxiliary layer pattern and the positive photoresist pattern.
    Type: Application
    Filed: February 12, 2018
    Publication date: July 1, 2021
    Applicants: BOE Technology Group Co., Ltd., Hefei Xinsheng Optoelectronics Technology Co., Ltd.
    Inventors: Wei Li, Bin Zhou, Jun Liu, Ning Liu, Yang Zhang, Yingbin Hu
  • Publication number: 20210184126
    Abstract: A method for manufacturing a light-emitting component, including forming an auxiliary electrode and a first electrode arranged at an interval on a base substrate; depositing, by means of a mask with a hollow area, a light-emitting layer on the base substrate on which the auxiliary electrode and the first electrode are formed; and forming a second electrode on the base substrate on which the light-emitting layer is formed. The light-emitting layer covers at least part of the first electrode, and at least a partial area of the auxiliary electrode is exposed outside the light-emitting layer. The second electrode covers at least part of the light-emitting layer and the at least partial area of the auxiliary electrode, and the second electrode is connected to the at least partial area of the auxiliary electrode.
    Type: Application
    Filed: May 14, 2020
    Publication date: June 17, 2021
    Inventors: Tongshang Su, Dongfang Wang, Jun Liu, Yingbin Hu, Qinghe Wang, Shengping Du, Liangchen Yan
  • Patent number: 11011437
    Abstract: The present disclosure provides a method for determining a width-to-length ratio of a channel region of a thin film transistor (TFT). The method includes: S1, setting an initial width-to-length ratio of the channel region; S2, manufacturing a TFT by using a mask plate according to the initial width-to-length ratio; S3, testing the TFT manufactured according to the initial width-to-length ratio; S4, determining whether or not the test result satisfies a predetermined condition, performing S5 if the test result satisfies the predetermined condition, and performing S6 if the test result does not satisfy the predetermined condition; S5, determining the initial width-to-length ratio as the width-to-length ratio of the channel region of the TFT; S6, changing the value of the initial width-to-length ratio, adjusting a position of the mask plate according to the changed initial width-to-length ratio, and performing S2 to S4 again.
    Type: Grant
    Filed: June 26, 2019
    Date of Patent: May 18, 2021
    Assignees: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Yingbin Hu, Ce Zhao, Yuankui Ding, Wei Song, Jun Wang, Yang Zhang, Wei Li, Liangchen Yan
  • Publication number: 20210135012
    Abstract: The present disclosure is related to a thin film transistor. The thin film transistor may include an active layer; a gate insulating layer on the active layer; and a gate and a plurality of metal films on the gate insulating layer. The plurality of metal films may be spaced apart from the gate, and insulated from the gate and the active layer.
    Type: Application
    Filed: November 1, 2019
    Publication date: May 6, 2021
    Applicants: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE Technology Group Co., Ltd.
    Inventors: Wei Song, Liangchen Yan, Ce Zhao, Heekyu Kim, Yuankui Ding, Leilei Cheng, Yingbin Hu, Wei Li, Guangyao Li, Qinghe Wang
  • Patent number: 10930786
    Abstract: A thin film transistor (TFT), a manufacturing method, an array substrate, a display panel, and a device is disclosed. The TFT includes a hydrogen-containing buffer layer located on a substrate; an oxide semiconductor layer located on the buffer layer, wherein the oxide semiconductor layer includes a conductor region and a semiconductor region; a source or drain located on the conductor region, and electrically connected to the conductor region; and a gate structure located on the semiconductor region.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: February 23, 2021
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Yuankui Ding, Ce Zhao, Guangcai Yuan, Yingbin Hu, Leilei Cheng, Jun Cheng, Bin Zhou
  • Patent number: 10923347
    Abstract: A metal oxide film and a manufacturing method thereof, a thin film transistor and an array substrate are provided. The manufacturing method of the metal oxide film includes: forming a metal oxide film on a base substrate; and supplying a negative ion to the metal oxide film for a preset time period by performing a anodization method, to convert a portion of metal ions in the metal oxide film into a metal oxide.
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: February 16, 2021
    Assignees: Hefei Xinsheng Optoelectronics Technology Co., Ltd., BOE Technology Group Co., Ltd.
    Inventors: Wei Song, Ce Zhao, Heekyu Kim, Ning Liu, Yuankui Ding, Wei Li, Yingbin Hu
  • Patent number: 10916615
    Abstract: A display panel includes a substrate; a conductive layer disposed on the substrate; a gate insulating layer disposed on the conductive layer; a gate layer disposed on the gate insulating layer, wherein the gate layer has a thickness larger than a thickness of the conductive layer; a groove extending toward the substrate and punching through the gate layer, orthographic projections of the groove and the conductive layer on the substrate overlapping, and gate layers separated on two sides of the groove being connected to the conductive layer; an interlayer dielectric layer disposed on a side of the gate layer away from the substrate and covering the conductive layer and filling the groove; and an auxiliary electrode layer disposed on the interlayer dielectric layer, wherein the orthographic projections of the auxiliary electrode layer and the gate layer on substrate do not overlap, and the orthographic projections of the auxiliary electrode layer and the groove on the substrate overlap.
    Type: Grant
    Filed: March 23, 2020
    Date of Patent: February 9, 2021
    Assignees: Hefei Xinsheng Optoelectronics Technology Co., Ltd., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Yingbin Hu, Ce Zhao, Ming Wang, Yuankui Ding, Wei Song, Liangchen Yan
  • Publication number: 20210036089
    Abstract: The present disclosure provides an OLED display panel and a method for detecting the OLED display panel, and a display device. The OLED display panel includes a base substrate including a display area and a non-display area surrounding the display area and having a first region adjacent to the display area. The display area includes a drive signal line and a power supply voltage signal line both extending from the display area to the first region. The drive signal line includes, in the first region, a first section of wiring at an anode layer, the power supply voltage signal line includes, in the first region, a second section of wiring at a gate metal layer, and parts of the drive signal line and the power supply voltage signal line in the display area are located at a source-drain metal layer.
    Type: Application
    Filed: June 24, 2020
    Publication date: February 4, 2021
    Inventors: Guangyao LI, Dongfang WANG, Jun WANG, Haitao WANG, Qinghe WANG, Ning LIU, Wei LI, Yingbin HU, Yang ZHANG
  • Publication number: 20210012692
    Abstract: Embodiments of the present disclosure provide a method and a device for detecting a threshold voltage drift of a transistor in a pixel circuit, which are used for detecting the threshold voltage drift of the transistor to be detected in the pixel circuit. The transistor to be detected is at least one of the driving transistor and the detection transistor. The detection method comprises: inputting, during an inputting stage, a first turning-on voltage to the second scanning terminal, so as to turn on the detection transistor, enabling writing a first voltage into the second node through the detection signal terminal; inputting, during a detection stage, a first turning-off voltage to the second scanning terminal, so as to turn off the detection transistor, thereby detecting an actual voltage at the second node; and determining a state of the threshold voltage drift of the transistor to be detected according to the actual voltage and the first voltage.
    Type: Application
    Filed: June 11, 2020
    Publication date: January 14, 2021
    Inventors: Jun Wang, Dongfang Wang, Liangchen Yan, Guangyao Li, Haitao Wang, Qinghe Wang, Yingbin Hu, Yang Zhang, Tongshang Su