Abstract: A semiconductor integrated circuit of an embodiment includes: first to fifth wiring lines; a first OTP memory element including a first and second terminals connected to the first and second wiring lines; a first p-channel transistor including a source and drain terminals connected to the first and third wiring line, and a gate terminal receiving a first control signal; a first n-channel transistor including a source and drain terminals connected to the first and fourth wiring lines, and a gate terminal receiving a second control signal; a second p-channel transistor including a source and drain terminals connected to the second and third wiring lines, and a gate terminal receiving a third control signal; and a second n-channel transistor including a source and drain terminals connected to the second and fifth wiring lines, and a gate terminal receiving a fourth control signal.

Abstract: A semiconductor integrated circuit of an embodiment includes: first to fifth wiring lines; a first OTP memory element including a first and second terminals connected to the first and second wiring lines; a first p-channel transistor including a source and drain terminals connected to the first and third wiring line, and a gate terminal receiving a first control signal; a first n-channel transistor including a source and drain terminals connected to the first and fourth wiring lines, and a gate terminal receiving a second control signal; a second p-channel transistor including a source and drain terminals connected to the second and third wiring lines, and a gate terminal receiving a third control signal; and a second n-channel transistor including a source and drain terminals connected to the second and fifth wiring lines, and a gate terminal receiving a fourth control signal.

Abstract: A semiconductor integrated circuit according to an embodiment includes: first to third wirings; first current limiters corresponding to the first wirings; second current limiters corresponding to the second wirings; third current limiters corresponding to the third wirings; first drivers corresponding to the first current limiters; second drivers corresponding to the second current limiters; third drivers corresponding to the third current limiters; and a first array and a second array, wherein the first array comprising: fourth wirings corresponding to the first wirings; fifth wirings corresponding to the second wirings; first transistors corresponding to the first wirings; second transistors corresponding to the second wirings; and first resistive change elements arranged in intersecting areas of the fourth wirings and the fifth wirings, respectively, the first resistive change elements including a first terminal connected to corresponding one of the fourth wirings and a second terminal connected to corresp

Abstract: A semiconductor integrated circuit according to an embodiment includes: first to third wirings; first current limiters corresponding to the first wirings; second current limiters corresponding to the second wirings; third current limiters corresponding to the third wirings; first drivers corresponding to the first current limiters; second drivers corresponding to the second current limiters; third drivers corresponding to the third current limiters; and a first array and a second array, wherein the first array comprising: fourth wirings corresponding to the first wirings; fifth wirings corresponding to the second wirings; first transistors corresponding to the first wirings; second transistors corresponding to the second wirings; and first resistive change elements arranged in intersecting areas of the fourth wirings and the fifth wirings, respectively, the first resistive change elements including a first terminal connected to corresponding one of the fourth wirings and a second terminal connected to corresp

Abstract: An integrated circuit according to an embodiment includes: resistive change elements disposed in intersection regions between first and second wiring lines; a first driver driving the first wiring lines; a second driver driving the second wiring lines; a control circuit controlling the first and second drivers; first current limiter circuits corresponding to the first wiring lines, each of the first current circuits each limiting a maximum current flowing in corresponding one of the first wiring lines to a value not greater than one of a first to third current values; and second current limiter circuits corresponding to the second wiring lines, the second current limiter circuits each limiting a maximum current flowing in corresponding one of the second wiring lines to a value not greater than one of the first to third current value, the limiting current of the selected element being higher than that of the unselected element.

Abstract: An integrated circuit according to an embodiment includes: resistive change elements disposed in intersection regions between first and second wiring lines; a first driver driving the first wiring lines; a second driver driving the second wiring lines; a control circuit controlling the first and second drivers; first current limiter circuits corresponding to the first wiring lines, each of the first current circuits each limiting a maximum current flowing in corresponding one of the first wiring lines to a value not greater than one of a first to third current values; and second current limiter circuits corresponding to the second wiring lines, the second current limiter circuits each limiting a maximum current flowing in corresponding one of the second wiring lines to a value not greater than one of the first to third current value, the limiting current of the selected element being higher than that of the unselected element.

Abstract: A programmable logic device according to an embodiment includes: a plurality of first and second wiring lines; a plurality of resistive change elements each including a first electrode containing Ni and connected to corresponding one of the first wiring lines, a second electrode containing TiN and connected to corresponding one of the second wiring lines, a resistive change layer containing a hafnium oxide and arranged between the first electrode and the second electrode, and an insulation layer arranged between the resistive change layer and the second electrode, the insulation layer including at least one of an aluminum oxide, an iron oxide, a titanium oxide, a copper oxide, a nickel oxide, a tantalum oxide, a tungsten oxide, a chromium oxide, a rhenium oxide, and a hafnium oxynitride.

Abstract: A look-up table circuit of an embodiment includes: first wiring lines; second wiring lines; resistive change elements disposed to intersection regions of the first and second wiring lines, each resistive change element including a first electrode connected to a corresponding one of the first wiring lines, a second electrode connected to a corresponding one of the second wiring lines; and a resistive change layer disposed between the first electrode and the second electrode; a first controller controlling voltages applied to the first wiring lines; a second controller controlling voltages applied to the second wiring lines; and a multiplexer including input terminals connected to the first wiring lines and an output terminal.

Abstract: A look-up table circuit of an embodiment includes: first wiring lines; second wiring lines; resistive change elements disposed to intersection regions of the first and second wiring lines, each resistive change element including a first electrode connected to a corresponding one of the first wiring lines, a second electrode connected to a corresponding one of the second wiring lines; and a resistive change layer disposed between the first electrode and the second electrode; a first controller controlling voltages applied to the first wiring lines; a second controller controlling voltages applied to the second wiring lines; and a multiplexer including input terminals connected to the first wiring lines and an output terminal.