Patents by Inventor Yiwen Chen

Yiwen Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6943091
    Abstract: A deposition method for filling recesses in a substrate is described. In the method, the substrate is exposed to an energized deposition gas comprising first and second components, to deposit a first layer of a material in the recess, and thereafter, the ratio of the first component to the second component is reduced, to deposit a second layer of the material over the first layer in the recess. The deposition method may be used to fill recesses in a substrate and smoothen out reentrant cavities in a silicon nitride liner, in the fabrication of polysilicon gates in a substrate.
    Type: Grant
    Filed: July 12, 2001
    Date of Patent: September 13, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Hung-Tien Yu, Yiwen Chen
  • Patent number: 6617224
    Abstract: In a method of filling a trench in a substrate, a substrate is placed in a process zone, the substrate comprising a trench. A first deposition process is performed by providing a first gas into the process zone, maintaining first process conditions to deposit a first silicon oxide material in the trench in the substrate, and exhausting the first gas. Thereafter, a second deposition process is performed by providing a second gas into the process zone, maintaining second process conditions to deposit a second silicon oxide material to fill the trench and optionally overfill the trench, and exhausting the second gas. The multiple process deposition process allows the trench to be filled and overfilled with different types of silicon oxide materials to render the trench filling process more economical.
    Type: Grant
    Filed: June 28, 2001
    Date of Patent: September 9, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Hung-Tien Yu, Yiwen Chen
  • Publication number: 20020055268
    Abstract: In a method of filling a trench in a substrate, a substrate is placed in a process zone, the substrate comprising a trench. A first deposition process is performed by providing a first gas into the process zone, maintaining first process conditions to deposit a first silicon oxide material in the trench in the substrate, and exhausting the first gas. Thereafter, a second deposition process is performed by providing a second gas into the process zone, maintaining second process conditions to deposit a second silicon oxide material to fill the trench and optionally overfill the trench, and exhausting the second gas. The multiple process deposition process allows the trench to be filled and overfilled with different types of silicon oxide materials to render the trench filling process more economical.
    Type: Application
    Filed: June 28, 2001
    Publication date: May 9, 2002
    Inventors: Hung-Tien Yu, Yiwen Chen
  • Publication number: 20020052128
    Abstract: A deposition method for filling recesses in a substrate is described. In the method, the substrate is exposed to an energized deposition gas comprising first and second components, to deposit a first layer of a material in the recess, and thereafter, the ratio of the first component to the second component is reduced, to deposit a second layer of the material over the first layer in the recess. The deposition method may be used to fill recesses in a substrate and smoothen out reentrant cavities in a silicon nitride liner, in the fabrication of polysilicon gates in a substrate.
    Type: Application
    Filed: July 12, 2001
    Publication date: May 2, 2002
    Inventors: Hung-Tien Yu, Yiwen Chen